TWI627315B - Method of manufacturing plating films - Google Patents
Method of manufacturing plating films Download PDFInfo
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- TWI627315B TWI627315B TW103116038A TW103116038A TWI627315B TW I627315 B TWI627315 B TW I627315B TW 103116038 A TW103116038 A TW 103116038A TW 103116038 A TW103116038 A TW 103116038A TW I627315 B TWI627315 B TW I627315B
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/18—Electroplating using modulated, pulsed or reversing current
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/007—Current directing devices
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/60—Electroplating characterised by the structure or texture of the layers
- C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/60—Electroplating characterised by the structure or texture of the layers
- C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
- C25D5/611—Smooth layers
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/627—Electroplating characterised by the visual appearance of the layers, e.g. colour, brightness or mat appearance
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
- H01L23/49582—Metallic layers on lead frames
Abstract
一種分別於一工件之第一主要表面、及於該第一主要表面相反側之第二主要表面上製造電鍍膜的方法，包括：準備一週期性反向電源以及一直流電源；由該週期性反向電源，於電鍍溶液中，於該工件與面對該工件之第一主要表面的第一電極之間，提供定時、反向週期性變換電流方向之電流；以及；由該直流電源，於電鍍溶液中，於該工件與面對該工件之第二主要表面的第二電極之間，提供直流電流；同時進行由該週期性反向電源提供之電流以及由該直流電源提供之直流電流，以分別於該第一主要表面與該第二主要表面形成電鍍膜。 A method for manufacturing an electroplated film on a first main surface of a workpiece and on a second main surface opposite to the first main surface includes: preparing a periodic reverse power supply and a DC power supply; Reverse power supply, in the electroplating solution, between the workpiece and the first electrode facing the first main surface of the workpiece, providing a timing, reverse current periodically changing the direction of the current; and; by the DC power supply, in In the plating solution, a DC current is provided between the workpiece and the second electrode facing the second major surface of the workpiece; the current provided by the periodic reverse power supply and the DC current provided by the DC power supply are simultaneously performed, A plating film is formed on the first main surface and the second main surface, respectively.
Description
本發明係有關一種電鍍膜之製造方法。 The invention relates to a method for manufacturing an electroplated film.
儘管透過熱或類似應用黏合在一起，金屬構件例如引線框架，仍會在製造步驟中、使用中，或隨著老化，從樹脂構件例如密封樹脂上脫離，此為長久以來的問題。 Although bonded together by heat or similar applications, metal members such as lead frames are still detached from resin members such as sealing resin during manufacturing steps, in use, or as they age, which has been a long-standing problem.
因此，對於如何強力地黏合金屬構件與樹脂構件之方法進行研究。例如，研究粗化金屬構件表面的方法。 Therefore, how to strongly bond metal members and resin members is studied. For example, study methods for roughening the surface of metal components.
專利文獻1中公開了一種在預定條件下，於含有增亮劑之電解溶液中，透過使用具有不對稱正向與負向脈衝之脈衝電解，電鍍該軋製銅板，以粗化軋製銅板表面的方法。 Patent Document 1 discloses a method of electroplating the rolled copper plate by using pulse electrolysis with asymmetric positive and negative pulses in an electrolytic solution containing a brightener under predetermined conditions to roughen the surface of the rolled copper plate Methods.
然而，根據專利文獻1中公開之方法，該軋製銅板之所有表面皆為粗化。 However, according to the method disclosed in Patent Document 1, all surfaces of the rolled copper plate are roughened.
舉例而言，一例中，必須於引線框架或類似物之一表面上形成樹脂，但不希望於該引線框架的另一表面形成樹脂。在如此例中，若樹脂在形成於該引線框架之一表面時，該樹脂附著到該引線框架之其他表面上，若其他表面粗糙，則難以從上述之其他表面移除樹脂。生產力或產出率下降而成為問題。 For example, in one example, resin must be formed on one surface of the lead frame or the like, but it is not desirable to form resin on the other surface of the lead frame. In this example, if the resin is formed on one surface of the lead frame, the resin adheres to the other surface of the lead frame. If the other surface is rough, it is difficult to remove the resin from the other surface. Productivity or output rate is a problem.
例如，可考慮一種方法，使軋製銅板進行電鍍，以在遮罩一表面後，形成如專利文獻1所揭示之粗化表面，該表面希望為平滑面，以遮罩膠帶或類似物使該表面平滑。 For example, a method may be considered in which a rolled copper plate is electroplated to form a roughened surface as disclosed in Patent Document 1 after masking a surface, the surface is desirably smooth, and masking tape or the like is used The surface is smooth.
然而，在此情形中，在電鍍之前必須貼上遮罩膠帶或類似物，然後於電鍍後移除該遮罩膠帶或類似物。因此有生產力下降之問題。更且，當該工件相當細薄時，例如引線框架或類似物，在移除遮罩膠帶時可能會對該工件造成損壞。在此情形中，有產出率下降之問題。 However, in this case, masking tape or the like must be attached before plating, and then the masking tape or the like is removed after plating. Therefore, there is a problem of decreased productivity. Moreover, when the workpiece is relatively thin, such as a lead frame or the like, the workpiece may be damaged when the masking tape is removed. In this case, there is the problem of a decline in output rate.
專利文獻1：特開2008-223063號公報 Patent Document 1: Japanese Patent Laid-Open No. 2008-223063
本發明旨在解決上述課題，並提供一種電鍍膜之製造方法，能透過單一電鍍步驟，於一工件之主要表面上，分別形成具有粗糙表面之電鍍膜及具有平滑表面之電鍍膜。 The present invention aims to solve the above-mentioned problems, and provides a method for manufacturing an electroplated film, which can form an electroplated film with a rough surface and an electroplated film with a smooth surface on a main surface of a workpiece through a single electroplating step.
應注意，上述元件之任意組合，以及本發明中以方法、裝置、系統等構成之表現形式的任何變化，皆屬本發明之有效實施例。 It should be noted that any combination of the above-mentioned elements and any changes in the manifestations of the present invention constituted by methods, devices, systems, etc., are all effective embodiments of the present invention.
根據一實施例，本發明提供一種電鍍膜之製造方法，該電鍍膜係分別形成於一工件之第一主要表面、及位於該第一主要表面相反側之第二主要表面上，該電鍍膜之製造方法包括：準備一週期性反向電源以及一直流電源；由該週期性反向電源，於電鍍溶液中，於該工件與面對該工件之第一主要表面的第一電極之間，提供定時、反向週期性變換電流方向之電 流；以及由該直流電源，於電鍍溶液中，於該工件與面對該工件之第二主要表面的第二電極之間，提供直流電流；同時進行由該週期性反向電源提供之電流以及由該直流電源提供之直流電流，以分別於該第一主要表面與該第二主要表面形成電鍍膜。 According to an embodiment, the present invention provides a method of manufacturing an electroplated film formed on a first main surface of a workpiece and a second main surface on the opposite side of the first main surface The manufacturing method includes: preparing a periodic reverse power supply and a DC power supply; the periodic reverse power supply is provided in the plating solution between the workpiece and the first electrode facing the first major surface of the workpiece Electricity that changes the direction of current periodically and in reverse Current; and by the DC power supply, in a plating solution, between the workpiece and the second electrode facing the second main surface of the workpiece, providing a DC current; while the current provided by the periodic reverse power supply and The DC current provided by the DC power source forms a plating film on the first main surface and the second main surface, respectively.
11‧‧‧電鍍槽 11‧‧‧plating bath
12‧‧‧工件 12‧‧‧Workpiece
13‧‧‧第一電極 13‧‧‧First electrode
14‧‧‧第二電極 14‧‧‧Second electrode
15‧‧‧週期性反向電源 15‧‧‧ Periodic reverse power supply
16‧‧‧直流電源 16‧‧‧DC power supply
17‧‧‧電鍍溶液 17‧‧‧plating solution
101‧‧‧局部側表面 101‧‧‧Partial side surface
110‧‧‧QFN型引線框架 110‧‧‧QFN type lead frame
111‧‧‧引線 111‧‧‧Lead
112‧‧‧晶粒墊 112‧‧‧ Die pad
113‧‧‧晶片 113‧‧‧chip
114‧‧‧樹脂 114‧‧‧Resin
121‧‧‧第一主要表面 121‧‧‧The first main surface
122‧‧‧第二主要表面 122‧‧‧Second main surface
當一併閱讀下列之詳細敘述及附圖，可更加清楚本發明之其他目的、特徵與優點。 When reading the following detailed description and accompanying drawings together, other objects, features and advantages of the present invention can be more clearly understood.
第1圖係顯示一實施例之製造電鍍膜的方法中所使用的電鍍槽之結構示意圖。 FIG. 1 is a schematic diagram showing the structure of an electroplating bath used in the method of manufacturing an electroplated film according to an embodiment.
第2圖係顯示一作為工件範例的QFN型引線框架之剖面圖。 Figure 2 shows a cross-sectional view of a QFN lead frame as an example of a workpiece.
第3圖係顯示一由週期性反向電源提供之電流的電流分佈示意圖。 Figure 3 is a schematic diagram showing the current distribution of the current provided by the periodic reverse power supply.
第4A圖與第4B圖係顯示一實施例中得到之SEM影像圖。 Figures 4A and 4B show SEM images obtained in an example.
第5A圖與第5B圖係顯示一實施例中得到之AFM影像圖。 Figures 5A and 5B show AFM images obtained in an embodiment.
於此，參照實施例對本發明進行說明。本領域之技術人員可理解根據本發明之教示而完成多種變化的實施例，本發明並不僅限於用於說明之實施例。 Here, the present invention will be described with reference to examples. Those skilled in the art may understand that various modified embodiments are completed according to the teachings of the present invention, and the present invention is not limited to the embodiments used for illustration.
應注意，在解說圖式時，對相同的元件給予相同的表示符號，不再重複解說。 It should be noted that when explaining the drawings, the same symbols are given to the same elements, and the explanation will not be repeated.
在本實施例中，說明電鍍膜之製造方法之一例。 In this embodiment, an example of a method of manufacturing a plated film will be described.
根據本實施例之電鍍膜的製造方法，電鍍膜分別 形成於一工件之第一主要表面、及位於該第一主要表面相反側之第二主要表面。 According to the manufacturing method of the plating film of this embodiment, the plating films are respectively A first main surface formed on a workpiece and a second main surface located on the opposite side of the first main surface.
在本實施例中，一週期性反向電源連接於該工件與面對該工件之第一主要表面的第一電極之間，以及一直流電源連接於該工件與面對該工件之第二主要表面的第二電極之間。接著，以該週期性反向電源與直流電源，對該工件、第一電極與第二電極通以電壓，使得同時於該工件之第一主要表面與第二主要表面形成電鍍膜。 In this embodiment, a periodic reverse power supply is connected between the workpiece and the first electrode facing the first major surface of the workpiece, and a DC power supply is connected between the workpiece and the second main surface facing the workpiece Between the second electrodes on the surface. Then, the periodic reverse power supply and the DC power supply apply voltage to the workpiece, the first electrode, and the second electrode, so that a plating film is simultaneously formed on the first main surface and the second main surface of the workpiece.
第1圖顯示本實施例之電鍍膜的製造方法中所使用的電鍍槽11之結構示意圖。如第1圖所示，電鍍槽11中具有一具有第一主要表面121以及位於該第一主要表面121相反側的第二主要表面122的工件(電鍍目標)12。 FIG. 1 shows a schematic diagram of the structure of the electroplating bath 11 used in the manufacturing method of the electroplating film of this embodiment. As shown in FIG. 1, the electroplating bath 11 has a workpiece (electroplating target) 12 having a first main surface 121 and a second main surface 122 located on the opposite side of the first main surface 121.
該電鍍槽11包括有第一電極13、第二電極14、週期性反向電源15，以及直流電源16。該第一電極13面對該工件12之第一主要表面121，該第二電極14面對該工件12之第二主要表面122。該週期性反向電源15連接於第一電極13與工件12之間。該直流電源16連接於第二電極14與工件12之間。 The electroplating bath 11 includes a first electrode 13, a second electrode 14, a periodic reverse power supply 15, and a DC power supply 16. The first electrode 13 faces the first main surface 121 of the workpiece 12, and the second electrode 14 faces the second main surface 122 of the workpiece 12. The periodic reverse power supply 15 is connected between the first electrode 13 and the workpiece 12. The DC power supply 16 is connected between the second electrode 14 and the workpiece 12.
該工件12、第一電極13與第二電極14，均浸泡於電鍍槽11中之電鍍溶液17內。 The workpiece 12, the first electrode 13 and the second electrode 14 are all immersed in the plating solution 17 in the plating tank 11.
各部份皆已說明。 Each part has been explained.
該工件12並無特別限制。雖然第1圖中顯示之工件12為矩形，但工件12之形狀並無特別限制。本實施例之電鍍膜的製造方法可應用於各種具有不同形狀的工件上。任何必 須於一主要表面形成一粗糙面，並於另一主要表面上形成一平滑面者，皆可使用為工件12。例如，如上所述，可使用引線框架作為工件12。 The workpiece 12 is not particularly limited. Although the workpiece 12 shown in FIG. 1 is rectangular, the shape of the workpiece 12 is not particularly limited. The manufacturing method of the electroplated film of this embodiment can be applied to various workpieces with different shapes. Any must Any one that needs to form a rough surface on one main surface and a smooth surface on the other main surface can be used as the workpiece 12. For example, as described above, a lead frame can be used as the workpiece 12.
具體地說，一主要表面被樹脂密封、另一主要表面由樹脂露出的引線框架可作為工件12。如此之引線框架，可使用四方型扁平無引線封裝(Quad Flat Non-leaded package，QFN)型引線框架。 Specifically, a lead frame in which one main surface is sealed by resin and the other main surface is exposed by resin may be used as the workpiece 12. For such a lead frame, a quad flat non-leaded package (QFN) type lead frame can be used.
第2圖顯示一QFN型引線框架110之實施例。該QFN型引線框架110包括引線111及晶粒墊112。晶片113被安裝於晶粒墊112上，且該引線框架110之晶片安裝表面側以樹脂114密封。同時，如第2圖中所示，該引線框架110之局部側表面101亦可被樹脂114密封。 FIG. 2 shows an embodiment of a QFN type lead frame 110. The QFN type lead frame 110 includes leads 111 and die pads 112. The wafer 113 is mounted on the die pad 112, and the wafer mounting surface side of the lead frame 110 is sealed with resin 114. At the same time, as shown in FIG. 2, the partial side surface 101 of the lead frame 110 may also be sealed by the resin 114.
如上所述，QFN型引線框架110之其中一主要表面，即晶片安裝表面，被樹脂114密封，而QFN型引線框架110之另一主要表面，亦稱為外表面，由樹脂114露出。因此，與樹脂之附著力對於引線架110之晶片安裝表面是必要的，與焊料之附著力對於引線框架110之外表面是必要的。根據本實施例，在引線框架110之晶片安裝表面上進行電鍍以形成一粗糙表面，可提高與樹脂114之附著力。同時，在外表面上進行電鍍以形成一平滑表面，可確保與焊料之附著力。而且，透過進行電鍍，於引線框架110之局部側表面101上亦形成一粗糙表面，可更進一步提高與樹脂114之附著力。 As described above, one of the main surfaces of the QFN type lead frame 110, that is, the wafer mounting surface, is sealed by the resin 114, and the other main surface of the QFN type lead frame 110, also called the outer surface, is exposed by the resin 114. Therefore, the adhesion to the resin is necessary for the wafer mounting surface of the lead frame 110, and the adhesion to the solder is necessary for the outer surface of the lead frame 110. According to this embodiment, electroplating is performed on the wafer mounting surface of the lead frame 110 to form a rough surface, which can improve the adhesion with the resin 114. At the same time, electroplating is performed on the outer surface to form a smooth surface, which can ensure the adhesion with the solder. Moreover, by performing electroplating, a rough surface is also formed on the partial side surface 101 of the lead frame 110, which can further improve the adhesion with the resin 114.
引線框架110之材料，通常使用銅合金或類似物。若產物存在有一部分由樹脂114露出，當該產物正值加熱或類 似製造步驟時，該部份上可形成氧化膜。接著，可移除該氧化膜。若該氧化膜在製造過程中被移除，可能會造成生產線汙染的問題。 The material of the lead frame 110 is usually copper alloy or the like. If a part of the product is exposed by the resin 114, when the product is heated or similar Like the manufacturing process, an oxide film can be formed on this part. Then, the oxide film can be removed. If the oxide film is removed during the manufacturing process, it may cause contamination of the production line.
然而，根據本實施例之電鍍膜的製造方法，一平滑電鍍膜形成於工件12之其中之一主要表面。因此，形成於銅合金引線框架上之平滑電鍍膜可發揮改善氧化膜與銅合金引線框架間之附著力的作用，以防止氧化膜的移除。 However, according to the manufacturing method of the plated film of this embodiment, a smooth plated film is formed on one of the main surfaces of the workpiece 12. Therefore, the smooth plating film formed on the copper alloy lead frame can play a role of improving the adhesion between the oxide film and the copper alloy lead frame to prevent the removal of the oxide film.
舉例而言，透過預先形成作用為銅合金引線框架上之焊料結合層的鎳/鈀/金薄膜，可改善銅合金引線框架與焊料之間的附著力。此情形中，鎳薄膜可具有一平滑表面。因此，該層鎳薄膜可防止引線框架的氧化，且該引線框架可與焊料良好連結。 For example, by pre-forming a nickel / palladium / gold film that acts as a solder bonding layer on a copper alloy lead frame, the adhesion between the copper alloy lead frame and the solder can be improved. In this case, the nickel thin film may have a smooth surface. Therefore, the nickel thin film can prevent the oxidation of the lead frame, and the lead frame can be well connected with the solder.
根據本實施例，具有與樹脂良好附著特性之粗鎳薄膜以及平滑鎳薄膜可同時形成。 According to the present embodiment, a coarse nickel film and a smooth nickel film having good adhesion characteristics to the resin can be formed at the same time.
說明週期性反向電源15。第3圖顯示由週期性反向電源15提供之電流的電流分佈示意圖。 The periodic reverse power supply 15 will be described. FIG. 3 shows a schematic diagram of the current distribution of the current provided by the periodic reverse power supply 15.
週期性反向電源15提供定時、反向週期性變換電流方向之電流。換句話說，該週期性反向電源15提供極性周期性變換之電流。該週期性反向電源15可提供如第3圖中所示之脈衝電流。此時，當提供正向脈衝電流時，工件12之表面被電鍍(電鍍溶液沉澱)，當提供負向脈衝電流時，工件12之表面被洗脫(elute)至電鍍溶液中。 The periodic reverse power supply 15 provides a current that periodically and reverses the direction of the current periodically. In other words, the periodic reverse power supply 15 provides a current whose polarity changes periodically. The periodic reverse power supply 15 can provide pulse current as shown in FIG. 3. At this time, when a positive pulse current is supplied, the surface of the workpiece 12 is electroplated (precipitation of the plating solution), and when a negative pulse current is supplied, the surface of the workpiece 12 is eluted into the plating solution.
脈衝電流之具體條件，例如電流強度、正向脈衝與負向脈衝之週期或其他類似等，並無特別限制，可根據欲形 成之電鍍膜所需的形狀、電鍍溶液的種類或其他類似條件進行任意選擇。 The specific conditions of the pulse current, such as the current intensity, the period of the positive pulse and the negative pulse, or other similar, are not particularly limited, and can be The desired shape of the plating film, the type of plating solution or other similar conditions can be arbitrarily selected.
具體地說，脈衝電流的條件可選擇例如下示公式1表示之電容率(C ratio)數值對應於電鍍溶液組成之數值。公式中，「IP」表示正向脈衝電流值(沉積側)，「TP」表示正向脈衝電解週期(沉積側)，「IR」表示負向脈衝電流值(洗脫側)，「TR」表示負向脈衝電解週期(洗脫側)。電容率之數值會根據電鍍溶液之組成或欲形成之電鍍膜的特性而變化。因此，該數值並無特別限制。然而，為了在工件12之表面上形成電鍍膜，正向脈衝電流之乘積(IP×TP)可高於負向脈衝電流之乘積(IR×TR)。亦即，電容率之數值可大於1。 Specifically, the conditions of the pulse current can be selected, for example, the value of the C ratio represented by Formula 1 below corresponds to the value of the composition of the plating solution. In the formula, "I P " represents the positive pulse current value (deposition side), "T P " represents the positive pulse electrolysis cycle (deposition side), "I R " represents the negative pulse current value (elution side), ""T R " represents the negative pulse electrolysis cycle (elution side). The value of the permittivity will vary according to the composition of the plating solution or the characteristics of the plating film to be formed. Therefore, this value is not particularly limited. However, in order to form a plating film on the surface of the workpiece 12, the product of the positive pulse current (I P × T P ) may be higher than the product of the negative pulse current (I R × T R ). That is, the value of the permittivity may be greater than 1.
電容率(C ratio)=(IP×TP)/(IR×TR) (公式1) Permittivity (C ratio) = (I P × T P ) / (I R × T R ) (Equation 1)
接著，說明直流電源16。直流電源16於第二電極14與工件12之間提供一恆定電流。此時，直流電源16提供之電流強度無特別限制，可根據欲形成之電鍍膜所需的形狀、電鍍溶液的種類或其他類似條件進行任意選擇。為了在工件12的面對第二電極14的第二主要表面122上形成電鍍膜，直流電源16可連接至第二電極14與工件12，使得工件12成為陰極。 Next, the DC power supply 16 will be described. The DC power supply 16 provides a constant current between the second electrode 14 and the workpiece 12. At this time, the current intensity provided by the DC power supply 16 is not particularly limited, and can be arbitrarily selected according to the shape required for the plating film to be formed, the type of plating solution or other similar conditions. In order to form a plating film on the second main surface 122 of the workpiece 12 facing the second electrode 14, a DC power supply 16 may be connected to the second electrode 14 and the workpiece 12, so that the workpiece 12 becomes a cathode.
電鍍溶液17之種類無特別限制，可根據欲形成之電鍍膜來使用各種電鍍溶液。沉積為電鍍膜之金屬，可使用例如銅、鎳或類似物。因此，電鍍溶液可使用例如電解銅電鍍溶液或電解鎳電鍍溶液。電鍍溶液之組成無特別限制。添加劑例如增白劑、均勻劑、聚合物或類似物，可被加至電鍍溶液之中。 The type of the plating solution 17 is not particularly limited, and various plating solutions can be used according to the plating film to be formed. As the metal deposited as the plating film, for example, copper, nickel or the like can be used. Therefore, as the plating solution, for example, electrolytic copper plating solution or electrolytic nickel plating solution can be used. The composition of the plating solution is not particularly limited. Additives such as whitening agents, leveling agents, polymers or the like can be added to the plating solution.
當透過如第1圖中所示之由週期性反向電源15提供之反向、定時、周期性變換的電流，以及由直流電源16提供之直流電流進行電鍍時，根據本實施例之電鍍膜的製造方法，電鍍膜會形成於工件12之第一主要表面121與第二主要表面122上。此時，一粗糙電鍍膜會形成於工件12之其中一主要表面上(第一主要表面121與第二主要表面122)，且一平滑電鍍膜會形成於工件12之另一主要表面上。粗糙電鍍膜與平滑電鍍膜形成於第一主要表面121還是第二主要表面122上，取決於電鍍溶液之組成、電鍍條件或類似條件(此案例中粗糙電鍍膜係形成於第二主要表面122上)。 When electroplating is performed by the reversed, timed, and periodically converted current provided by the periodic reverse power supply 15 as shown in FIG. 1, and the DC current provided by the DC power supply 16, the plating film according to this embodiment In the manufacturing method, the plating film is formed on the first main surface 121 and the second main surface 122 of the workpiece 12. At this time, a rough plating film is formed on one of the main surfaces of the workpiece 12 (the first main surface 121 and the second main surface 122), and a smooth plating film is formed on the other main surface of the workpiece 12. Whether the rough plating film and the smooth plating film are formed on the first main surface 121 or the second main surface 122 depends on the composition of the plating solution, plating conditions or the like (in this case, the rough plating film is formed on the second main surface 122 ).
此案例中，以電鍍溶液在工件與電極之間時提供直流電流，形成一粗糙電鍍膜。 In this case, the plating solution is used to provide a DC current between the workpiece and the electrode to form a rough plating film.
此時，具有粗糙表面之電鍍膜(粗糙電鍍膜)形成於面對連接直流電源16的第二電極14之工件12的第二主要表面122上。而且，具有平滑表面之電鍍膜(平滑電鍍膜)形成於面對連接週期性反向電源15的第一電極13之工件12的第一主要表面121上。 At this time, a plating film (rough plating film) having a rough surface is formed on the second main surface 122 of the workpiece 12 facing the second electrode 14 connected to the DC power source 16. Moreover, a plated film (smooth plated film) having a smooth surface is formed on the first main surface 121 of the workpiece 12 facing the first electrode 13 connected to the periodic reverse power source 15.
如上所述，該電鍍溶液之特性在於，提供直流電流時以形成粗糙電鍍膜。而且，該直流電源16連接至工件12與面對工件12之第二主要表面122的第二電極14。由於直流電源16提供直流電流於工件12與第二電極14之間，因此，根據電鍍溶液之特性，該具有粗糙表面之電鍍膜會沉積於工件12之第二主要表面122上。 As described above, the plating solution is characterized by forming a rough plating film when a direct current is supplied. Moreover, the DC power supply 16 is connected to the workpiece 12 and the second electrode 14 facing the second main surface 122 of the workpiece 12. Since the DC power supply 16 provides a DC current between the workpiece 12 and the second electrode 14, the plating film with a rough surface is deposited on the second main surface 122 of the workpiece 12 according to the characteristics of the plating solution.
另一方面，如上所述，該週期性反向電源15連接 至工件12與面對工件12之第一主要表面121的第一電極13。因此，當該週期性反向電源15提供正向脈衝電流時，由於週期性反向電源15提供直流電流於工件12與第一電極13之間，根據電鍍溶液之特性，具有粗糙表面之電鍍膜會沉積於工件12之第一主要表面121上。接著，當週期性反向電源15藉由反轉電流極性以提供負向脈衝電流時，形成於工件12之第一主要表面121上之具有粗糙表面的電鍍膜中形成粗糙表面的凸起部分，會受到陽極電解而被優先洗脫。此現象之發生係因為電流集中於該凸起部分。因此，於工件12之第一主要表面121上，形成了具有平滑表面之電鍍膜(此案例中粗糙電鍍膜係形成於第一主要表面121)。 On the other hand, as described above, the periodic reverse power supply 15 is connected To the workpiece 12 and the first electrode 13 facing the first major surface 121 of the workpiece 12. Therefore, when the periodic reverse power supply 15 provides a forward pulse current, since the periodic reverse power supply 15 provides a direct current between the workpiece 12 and the first electrode 13, according to the characteristics of the plating solution, a plating film with a rough surface Will be deposited on the first major surface 121 of the workpiece 12. Then, when the periodic reverse power supply 15 provides a negative pulse current by reversing the polarity of the current, the convex portion of the rough surface is formed in the plating film with the rough surface formed on the first main surface 121 of the workpiece 12, It will be preferentially eluted by anode electrolysis. This phenomenon occurs because the current is concentrated on the convex portion. Therefore, an electroplated film having a smooth surface is formed on the first main surface 121 of the workpiece 12 (in this case, a rough electroplated film is formed on the first main surface 121).
此案例中，使用之電鍍溶液，在提供直流電流於工件與電極之間時，以形成一平滑電鍍膜。 In this case, the plating solution used forms a smooth plating film when DC current is supplied between the workpiece and the electrode.
此時，具有平滑表面之電鍍膜(平滑電鍍膜)形成於面對連接直流電源16的第二電極14的工件12之第二主要表面122上。而且，具有粗糙表面之電鍍膜(粗糙電鍍膜)形成於面對連接週期性反向電源15的第一電極13的工件12之第一主要表面121上。 At this time, a plated film (smooth plated film) having a smooth surface is formed on the second main surface 122 of the workpiece 12 facing the second electrode 14 connected to the DC power source 16. Moreover, a plating film (rough plating film) having a rough surface is formed on the first main surface 121 of the workpiece 12 facing the first electrode 13 connected to the periodic reverse power source 15.
如上所述，該電鍍溶液之特性在於，提供直流電流以形成一平滑電鍍膜。而且，該直流電源16連接至工件12與面對著工件12的第二主要表面122之第二電極14。由於直流電源16提供直流電流於工件12與第二電極14之間，因此，根據電鍍溶液之特性，具有平滑表面之電鍍膜會沉積於工件12之第二主要表面122上。 As mentioned above, the characteristic of the plating solution is to provide a direct current to form a smooth plating film. Moreover, the DC power supply 16 is connected to the workpiece 12 and the second electrode 14 facing the second main surface 122 of the workpiece 12. Since the DC power supply 16 provides a DC current between the workpiece 12 and the second electrode 14, according to the characteristics of the plating solution, a plating film having a smooth surface is deposited on the second main surface 122 of the workpiece 12.
另一方面，如上所述，該週期性反向電源15連接至工件12與面對著工件12的第一主要表面121的第一電極13。接著，透過週期性反向電源15，提供一高於形成一平滑電鍍膜之適當電流值的正向脈衝電流，除了一層具有平滑表面之電鍍膜外，一層附著力不佳之電鍍膜也會局部地沉積於工件12之第一主要表面121上。接著，當週期性反向電源15藉由反轉電流的極性以提供負向脈衝電流時，該附著力不佳之電鍍膜會受陽極電解而被選擇性地洗脫。此現象之發生係因為於該附著力不佳之電鍍膜選擇性地進行陽極電解。透過重複這些步驟，可形成一粗糙表面。因此，該電鍍膜之表面被粗糙化，因此具有粗糙表面之電鍍膜形成於工件12之第一主要表面121上。 On the other hand, as described above, the periodic reverse power source 15 is connected to the workpiece 12 and the first electrode 13 facing the first major surface 121 of the workpiece 12. Then, through the periodic reverse power supply 15, a positive pulse current higher than the appropriate current value for forming a smooth plating film is provided. In addition to a layer of plating film with a smooth surface, a layer of plating film with poor adhesion will also be It is deposited on the first major surface 121 of the workpiece 12. Then, when the periodic reverse power supply 15 provides a negative pulse current by reversing the polarity of the current, the plating film with poor adhesion will be selectively eluted by anode electrolysis. This phenomenon occurs because the electroplated film with poor adhesion selectively undergoes anodic electrolysis. By repeating these steps, a rough surface can be formed. Therefore, the surface of the electroplated film is roughened, so the electroplated film having a rough surface is formed on the first main surface 121 of the workpiece 12.
而且，根據本實施例之電鍍膜的製造方法，在電鍍膜形成於工件12之第一主要表面121與第二主要表面122上的同時，電鍍膜可形成於工件12之局部側表面上。當電鍍膜形成於工件12之主要表面上時，透過施加於工件12、第一電極13與第二電極14上之電壓的影響，電鍍膜會形成於工件12之局部側表面上。 Furthermore, according to the manufacturing method of the plating film of the present embodiment, while the plating film is formed on the first main surface 121 and the second main surface 122 of the workpiece 12, the plating film can be formed on the partial side surface of the workpiece 12. When the plating film is formed on the main surface of the workpiece 12, the plating film is formed on the partial side surface of the workpiece 12 by the influence of the voltage applied to the workpiece 12, the first electrode 13 and the second electrode 14.
該沉積於工件12之局部側表面的電鍍膜，可包括一粗糙電鍍膜。以此配置，可增加工件12與樹脂之附著力。因此，較佳為該粗糙電鍍膜形成於工件12之局部側表面。此時，粗糙電鍍膜與平滑電鍍膜可以混合型態形成於工件12之局部側表面。 The plating film deposited on the partial side surface of the workpiece 12 may include a rough plating film. With this configuration, the adhesion of the workpiece 12 to the resin can be increased. Therefore, it is preferable that the rough plating film is formed on a partial side surface of the work 12. At this time, the rough plating film and the smooth plating film may be formed on a partial side surface of the work 12 in a mixed pattern.
如上所述，根據本實施例，提供一種電鍍膜的製 造方法，透過單一電鍍步驟，於一工件之主要表面上，分別形成一層具有粗糙表面之電鍍膜以及一層具有平滑表面之電鍍膜。 As described above, according to this embodiment, a method for manufacturing a plating film is provided In the manufacturing method, a single electroplating step is used to form a layer of electroplated film with a rough surface and a layer of electroplated film with a smooth surface on the main surface of a workpiece.
因此，形成於工件12之第一主要表面121與第二主要表面122之其中一者之具有粗糙表面的電鍍膜，可提高工件12與樹脂黏合時之黏合強度。而且，於工件12之第一主要表面121與第二主要表面122之另一者，形成具有平滑表面之電鍍膜。因此，當樹脂黏合於工件12之一表面時，即使樹脂附著至另一面表面上，仍能輕易地移除該樹脂。 Therefore, the plating film having a rough surface formed on one of the first main surface 121 and the second main surface 122 of the workpiece 12 can improve the bonding strength when the workpiece 12 is bonded to the resin. Furthermore, a plating film having a smooth surface is formed on the other of the first main surface 121 and the second main surface 122 of the workpiece 12. Therefore, when the resin is adhered to one surface of the workpiece 12, even if the resin is attached to the surface of the other surface, the resin can be easily removed.
(第一實施例) (First embodiment)
在本實施例中，電鍍膜係根據下列步驟形成於工件之表面上。 In this embodiment, the plating film is formed on the surface of the workpiece according to the following steps.
如第1圖中所示，電鍍膜之形成，係透過將週期性反向電源15連接於工件12與第一電極13之間，以及將直流電源16連接於工件12與第二電極14之間。 As shown in FIG. 1, the plating film is formed by connecting a periodic reverse power supply 15 between the workpiece 12 and the first electrode 13 and a DC power supply 16 between the workpiece 12 and the second electrode 14 .
工件12係使用由銅合金(C194)構成之金屬板。電鍍溶液之組成係使用200g/L之硫酸銅、100g/L之硫酸、50ppm之氯、2ml/L之增白劑(羅門哈斯公司製，產品名稱：MICROFILLTM EVF BRIGHTENER)、10ml/L之均平劑(羅門哈斯公司製，產品名稱：MICROFILLTM EVF LEVELER)，以及20ml/L之聚合物(羅門哈斯公司製，產品名稱：MICROFILLTM EVF C2)。 For the workpiece 12, a metal plate made of copper alloy (C194) is used. The composition of the plating solution is to use 200g / L copper sulfate, 100g / L sulfuric acid, 50ppm chlorine, 2ml / L brightener (manufactured by Rohm and Haas Company, product name: MICROFILL TM EVF BRIGHTENER), 10ml / L Leveling agent (manufactured by Rohm and Haas, product name: MICROFILL TM EVF LEVELER), and a polymer of 20 ml / L (manufactured by Rohm and Haas company, product name: MICROFILL TM EVF C2).
根據上述條件形成電鍍膜之後，可確認有一粗糙 表面形成於面對第一電極13的工件12之第一主要表面121上，以及一平滑表面形成於面對第二電極14的工件12之第二主要表面122上。 After forming the plating film according to the above conditions, a roughness can be confirmed The surface is formed on the first main surface 121 of the workpiece 12 facing the first electrode 13, and a smooth surface is formed on the second main surface 122 of the workpiece 12 facing the second electrode 14.
透過掃瞄電子顯微鏡(SEM)(JEOL公司製，型號碼：JSM-5600LV)觀察形成之電鍍膜的表面。第4A圖與第4B圖係SEM影像圖。透過SEM分別觀察各主要表面之中心部分。 The surface of the formed plating film was observed through a scanning electron microscope (SEM) (manufactured by JEOL Corporation, model number: JSM-5600LV). Figures 4A and 4B are SEM images. Observe the central part of each main surface through SEM.
第4A圖顯示該形成於工件12之第一主要表面121上的電鍍膜之SEM影像圖。第4A圖中，可確認因微粒子形成於表面上而表面粗糙。第4B圖顯示該形成於工件12之第二主要表面122上的電鍍膜之SEM影像圖。第4B圖中，不同於第4A圖中顯示之電鍍膜，可確認其為平滑表面。 FIG. 4A shows an SEM image of the plating film formed on the first main surface 121 of the workpiece 12. In FIG. 4A, it can be confirmed that the surface is rough due to the formation of fine particles on the surface. FIG. 4B shows an SEM image of the plating film formed on the second main surface 122 of the workpiece 12. In Figure 4B, unlike the plating film shown in Figure 4A, it can be confirmed that it is a smooth surface.
透過原子力顯微鏡(AFM)(精工電子有限公司製，型號碼：Nano Navi Nanocute)觀察形成之電鍍膜的表面。第5A圖與第5B圖係AFM影像圖。粗糙度之測量結果顯示於表一。 Observe the surface of the formed plating film through an atomic force microscope (AFM) (manufactured by Seiko Instruments Inc., model number: Nano Navi Nanocute). Figures 5A and 5B are AFM images. The measurement results of roughness are shown in Table 1.
第5A圖顯示該形成於工件12之第一主要表面121上的電鍍膜之AFM影像圖。第5B圖顯示該形成於工件12之第二主要表面122上的電鍍膜之AFM影像圖。根據第5A圖與第5B圖，可確認形成於第一主要表面121上之電鍍膜具有粗糙表面，形成於第二主要表面122上之電鍍膜具有平滑表面。 FIG. 5A shows an AFM image of the plating film formed on the first main surface 121 of the workpiece 12. FIG. 5B shows an AFM image of the plating film formed on the second main surface 122 of the workpiece 12. According to FIGS. 5A and 5B, it can be confirmed that the plating film formed on the first main surface 121 has a rough surface, and the plating film formed on the second main surface 122 has a smooth surface.
亦可從表一得知，相較於形成於工件12之第二主 要表面122上、具有平滑表面的電鍍膜，形成於工件12之第一主要表面121上、具有粗糙表面的電鍍膜之所有規模限制表面(scale limited surface)之高度的算數平均數Sa、最大高度P-V，以及表面模數(surface modulus)S ratio之數值均較高。 It can also be seen from Table 1 that compared to the second main body formed in the workpiece 12 The plated film having a smooth surface on the primary surface 122, the arithmetic mean Sa of the height of all scale limited surfaces of the plated film formed on the first main surface 121 of the workpiece 12 and having a rough surface, the maximum height The values of PV and surface modulus S ratio are higher.
(第二實施例) (Second embodiment)
而且，當工件12被用作引線框架時，對引線框架表面上之用於焊線的部分進行鍍銀。此時，可能會因為銀鍍膜上沒有形成一層氧化膜，而產生銀鍍膜與樹脂的附著力不佳的問題。因此，最好使該銀鍍膜之表面粗糙，以增加其與樹脂的附著力。為此，使一銀鍍膜形成於工件12之第一主要表面121上、具有粗糙表面之電鍍膜上。接著，測量粗糙度。 Moreover, when the work 12 is used as a lead frame, the portion for bonding wire on the surface of the lead frame is silver-plated. At this time, there may be a problem that the adhesion between the silver plating film and the resin is not good because an oxide film is not formed on the silver plating film. Therefore, it is better to roughen the surface of the silver plating film to increase its adhesion to the resin. For this, a silver plating film is formed on the first main surface 121 of the workpiece 12 and on the plating film having a rough surface. Next, the roughness is measured.
此時，透過脈衝電源與含有氰化銀之電鍍溶液進行鍍銀。 At this time, silver plating is performed through a pulse power supply and an electroplating solution containing silver cyanide.
而且，為了比較，在不存在具粗糙表面或平滑表面之電鍍膜的情況下，使一層銀鍍膜直接形成於工件12之表面上，並測量粗糙度。此時，透過與在位於工件12之第一主要表面121上、具有粗糙表面之電鍍膜上鍍銀之相同的方法來進行鍍銀。 Moreover, for comparison, in the absence of a plating film with a rough surface or a smooth surface, a layer of silver plating film is directly formed on the surface of the workpiece 12, and the roughness is measured. At this time, silver plating is performed by the same method as silver plating on a plating film having a rough surface on the first main surface 121 of the work 12.
透過雷射顯微鏡(奧林巴斯公司製，型號碼：OLS4000)測量粗糙度。粗糙度之測量結果顯示於表二。 The roughness was measured through a laser microscope (manufactured by Olympus Corporation, model number: OLS4000). The measurement results of roughness are shown in Table 2.
如表二中所示，可確認相較於直接形成於工件12上之銀鍍膜，形成於工件12之第一主要表面121、具有粗糙表面之電鍍膜上之銀鍍膜的表面較粗糙。 As shown in Table 2, it can be confirmed that the surface of the silver plating film formed on the first main surface 121 of the workpiece 12 and the plating film having a rough surface is rougher than the silver plating film formed directly on the workpiece 12.
從上述之結果，可確認，即使當銀鍍膜受該具有粗糙表面之電鍍膜的影響而形成於該具有粗糙表面之電鍍膜上，銀鍍膜之表面仍可被粗糙化。因此可確認，即使當其他電鍍膜透過本實施例之方法形成於該具有粗糙表面之電鍍膜上時，其仍可維持良好的附著力。 From the above results, it can be confirmed that even when the silver plating film is formed on the plating film having a rough surface by the influence of the plating film having a rough surface, the surface of the silver plating film can be roughened. Therefore, it can be confirmed that even when other plating films are formed on the plating film having a rough surface by the method of this embodiment, it can still maintain good adhesion.
(第三實施例) (Third embodiment)
本實施例中使用之銅合金(C194)，通常係用於引線框架或類似物。當在空氣中加熱或受到老化的影響，可能會有一層銅氧化膜形成於該銅合金C194之一表面上，接著再移除該銅氧化膜。確認是否能防止此銅氧化膜之移除。 The copper alloy (C194) used in this embodiment is usually used for lead frames or the like. When heated in air or affected by aging, a copper oxide film may be formed on one surface of the copper alloy C194, and then the copper oxide film is removed. Confirm whether it can prevent the removal of this copper oxide film.
具體地說，對第一實施例中得到之樣本(具有粗糙表面與平滑表面的電鍍膜形成於第一主要表面121與第二主要表面122上之該工件12)，於空氣中加熱至300℃、15分鐘。加熱之後，將該樣本冷卻，並分別於電鍍膜之第一主要表面121與第二主要表面122貼上膠帶(3M公司製，產品名稱：Scotch(註冊商標)修補膠帶810)，接著撕去這些膠帶。隨後，確認分別形成於第一主要表面121與第二主要表面122之氧化膜，兩者是否會被移除。 Specifically, the sample obtained in the first embodiment (the workpiece 12 with the plating film having a rough surface and a smooth surface formed on the first main surface 121 and the second main surface 122) is heated to 300 ° C in the air ,15 minutes. After heating, the sample was cooled, and adhesive tape (manufactured by 3M, product name: Scotch (registered trademark) repair tape 810) was applied to the first main surface 121 and the second main surface 122 of the electroplated film, respectively, and then these were removed tape. Subsequently, it is confirmed whether the oxide films formed on the first main surface 121 and the second main surface 122 will be removed.
而且，為了用於比較，在形成電鍍膜之前，在不存在具粗糙表面或平滑表面之電鍍膜的情況下，對工件12，亦即，銅合金板，進行相同的測試。表三中，「不具電鍍膜」顯 示出結果。 Moreover, for comparison, before forming the plating film, the same test is performed on the workpiece 12, that is, the copper alloy plate, in the absence of a plating film having a rough surface or a smooth surface. In Table 3, "without plating film" is displayed Show the result.
表三中，若氧化膜被移除，結果顯示為「差」，若氧化膜不被移除，結果則顯示為「佳」。 In Table 3, if the oxide film is removed, the result is shown as "poor", and if the oxide film is not removed, the result is shown as "good".
如表三中所示，不具電鍍膜之樣本，其氧化膜會被移除。另一方面，在工件12上具有電鍍膜之樣本，不論電鍍膜之表面為粗糙或平滑，其氧化膜皆不會被移除。 As shown in Table 3, the oxide film will be removed for samples without plating film. On the other hand, for samples with an electroplated film on the workpiece 12, no matter the surface of the electroplated film is rough or smooth, the oxide film will not be removed.
儘管已具體說明、描述較佳之製造電鍍膜的方法之實施例，但應了解只要不脫離本發明依申請專利範圍所定義的精神與範疇，仍可於其中稍作修改。 Although the preferred embodiment of the method for manufacturing an electroplated film has been specifically described and described, it should be understood that as long as the invention does not depart from the spirit and scope defined by the scope of the patent application, it can be slightly modified.
本發明並非僅限於具體公開之實施例，且只要不脫離本發明之依申請專利範圍所定義的精神與範疇，仍可進行各種變化與修改。 The present invention is not limited to the specifically disclosed embodiments, and as long as it does not deviate from the spirit and scope of the present invention defined by the scope of the patent application, various changes and modifications can still be made.
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| JP6905031B2 (en) * | 2016-02-17 | 2021-07-21 | 株式会社三井ハイテック | Lead frame and semiconductor package |
| JP6621681B2 (en) * | 2016-02-17 | 2019-12-18 | 株式会社三井ハイテック | Lead frame, manufacturing method thereof, and semiconductor package |
| JP6782116B2 (en) * | 2016-08-02 | 2020-11-11 | 古河電気工業株式会社 | Silver coating material |
| CN109468670B (en) * | 2018-11-16 | 2021-03-26 | 中山品高电子材料有限公司 | Method for electroplating copper layer on lead frame |
| CN112331566A (en) * | 2020-11-02 | 2021-02-05 | 昆山一鼎工业科技有限公司 | Manufacturing equipment and manufacturing method for surface roughness of lead frame |
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