TWI627292B - Ｃｕ-Ｇａ-Ｉｎ-Ｎａ靶 - Google Patents

Ｃｕ-Ｇａ-Ｉｎ-Ｎａ靶 Download PDF

Info

Publication number
TWI627292B
TWI627292B TW102146309A TW102146309A TWI627292B TW I627292 B TWI627292 B TW I627292B TW 102146309 A TW102146309 A TW 102146309A TW 102146309 A TW102146309 A TW 102146309A TW I627292 B TWI627292 B TW I627292B
Authority
TW
Taiwan
Prior art keywords
sputtering target
intermetallic
phase
target according
preparing
Prior art date
Application number
TW102146309A
Other languages
English (en)
Chinese (zh)
Other versions
TW201439340A (zh
Inventor
克里斯汀 林克
李杰華
彼德 舒馬赫
沃爾夫藍 克娜伯爾
吉哈德 雷曲佛瑞德
Original Assignee
攀時歐洲公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 攀時歐洲公司 filed Critical 攀時歐洲公司
Publication of TW201439340A publication Critical patent/TW201439340A/zh
Application granted granted Critical
Publication of TWI627292B publication Critical patent/TWI627292B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/02—Compacting only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00—Making metallic powder or suspensions thereof
    • B22F9/02—Making metallic powder or suspensions thereof using physical processes
    • B22F9/04—Making metallic powder or suspensions thereof using physical processes starting from solid material, e.g. by crushing, grinding or milling
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00—Making metallic powder or suspensions thereof
    • B22F9/02—Making metallic powder or suspensions thereof using physical processes
    • B22F9/06—Making metallic powder or suspensions thereof using physical processes starting from liquid material
    • B22F9/08—Making metallic powder or suspensions thereof using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying
    • B22F9/082—Making metallic powder or suspensions thereof using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying atomising using a fluid
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C24/00—Alloys based on an alkali or an alkaline earth metal
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C30/00—Alloys containing less than 50% by weight of each constituent
    • C22C30/02—Alloys containing less than 50% by weight of each constituent containing copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/10—Sintering only
    • B22F3/105—Sintering only by using electric current other than for infrared radiant energy, laser radiation or plasma ; by ultrasonic bonding
    • B22F2003/1051—Sintering only by using electric current other than for infrared radiant energy, laser radiation or plasma ; by ultrasonic bonding by electric discharge
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B22F2998/10—Processes characterised by the sequence of their steps
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/14—Both compacting and sintering simultaneously
    • B22F3/15—Hot isostatic pressing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)
TW102146309A 2013-01-31 2013-12-16 Ｃｕ-Ｇａ-Ｉｎ-Ｎａ靶 TWI627292B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
ATGM26/2013U AT13564U1 (de) 2013-01-31 2013-01-31 CU-GA-IN-NA Target
??ATGM26/2013 2013-01-31

Publications (2)

Publication Number Publication Date
TW201439340A TW201439340A (zh) 2014-10-16
TWI627292B true TWI627292B (zh) 2018-06-21

Family

ID=50238032

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102146309A TWI627292B (zh) 2013-01-31 2013-12-16 Ｃｕ-Ｇａ-Ｉｎ-Ｎａ靶

Country Status (7)

Country Link
US (1) US10329661B2 (enExample)
EP (1) EP2951332B1 (enExample)
JP (1) JP6393696B2 (enExample)
CN (1) CN104968828B (enExample)
AT (1) AT13564U1 (enExample)
TW (1) TWI627292B (enExample)
WO (1) WO2014117190A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6798852B2 (ja) 2015-10-26 2020-12-09 三菱マテリアル株式会社 スパッタリングターゲット及びスパッタリングターゲットの製造方法
WO2017138565A1 (ja) * 2016-02-08 2017-08-17 三菱マテリアル株式会社 スパッタリングターゲット及びスパッタリングターゲットの製造方法
JP6794850B2 (ja) * 2016-02-08 2020-12-02 三菱マテリアル株式会社 スパッタリングターゲット及びスパッタリングターゲットの製造方法
WO2018174019A1 (ja) * 2017-03-23 2018-09-27 三菱マテリアル株式会社 Ｉｎ－Ｃｕ焼結体スパッタリングターゲット及びＩｎ－Ｃｕ焼結体スパッタリングターゲットの製造方法
CN112680627B (zh) * 2020-12-21 2022-05-13 无锡天宝电机有限公司 一种转子导条及其制备方法
CN112813397B (zh) * 2020-12-31 2023-06-30 金堆城钼业股份有限公司 一种钼钠合金板状靶材的制备方法
CN113564545B (zh) * 2021-07-27 2022-02-22 杭州阿凡达光电科技有限公司 一种环保型氧化铌靶材的加工工艺及其装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101195904B (zh) * 2006-11-23 2010-06-09 GfE金属和材料有限公司 特别用于溅射靶、管状阴极等的制造的基于铜-铟-镓合金的镀膜材料
TW201114933A (en) * 2009-04-14 2011-05-01 Kobelco Res Inst Inc Cu-ga alloy sputtering target and process for manufacture thereof

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1556902A4 (en) * 2002-09-30 2009-07-29 Miasole MANUFACTURING DEVICE AND METHOD FOR PRODUCING THIN FILM SOLAR CELLS IN A LARGE SCALE
CN101260513B (zh) * 2008-04-23 2011-04-06 王东生 太阳能电池铜铟镓硒薄膜关键靶材的制备方法
US8134069B2 (en) * 2009-04-13 2012-03-13 Miasole Method and apparatus for controllable sodium delivery for thin film photovoltaic materials
WO2011008346A1 (en) * 2009-07-14 2011-01-20 University Of Florida Research Foundation, Inc. Finishing of surfaces of tubes
CN101613091B (zh) * 2009-07-27 2011-04-06 中南大学 一种cigs粉末、靶材、薄膜及其制备方法
JP4793504B2 (ja) 2009-11-06 2011-10-12 三菱マテリアル株式会社 スパッタリングターゲット及びその製造方法
JP5501774B2 (ja) * 2010-01-20 2014-05-28 山陽特殊製鋼株式会社 高強度を有するＣｕ−Ｇａ系スパッタリングターゲット材
CN101820024A (zh) * 2010-02-11 2010-09-01 昆山正富机械工业有限公司 多层铜铟镓硒(硫)光吸收前驱层制造方法
JP4720949B1 (ja) 2010-04-09 2011-07-13 住友金属鉱山株式会社 Ｃｕ−Ｇａ合金粉末の製造方法及びＣｕ−Ｇａ合金粉末、並びにＣｕ−Ｇａ合金スパッタリングターゲットの製造方法及びＣｕ−Ｇａ合金スパッタリングターゲット
US20120018828A1 (en) 2010-07-23 2012-01-26 Stion Corporation Sodium Sputtering Doping Method for Large Scale CIGS Based Thin Film Photovoltaic Materials
JP2012029794A (ja) * 2010-07-29 2012-02-16 Omron Healthcare Co Ltd 電子血圧計用基板、電子血圧計用モジュール、および電子血圧計
JP2012079997A (ja) 2010-10-05 2012-04-19 Kobe Steel Ltd 化合物半導体薄膜太陽電池用光吸収層の製造方法、およびＩｎ−Ｃｕ合金スパッタリングターゲット
JP5418463B2 (ja) 2010-10-14 2014-02-19 住友金属鉱山株式会社 Ｃｕ−Ｇａ合金スパッタリングターゲットの製造方法
JP5725610B2 (ja) 2011-04-29 2015-05-27 三菱マテリアル株式会社 スパッタリングターゲット及びその製造方法
JP2013166976A (ja) * 2012-02-14 2013-08-29 Sumitomo Metal Mining Co Ltd Ｃｕ−Ｇａ合金スパッタリングターゲットの製造方法及びＣｕ−Ｇａ合金スパッタリングターゲット

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101195904B (zh) * 2006-11-23 2010-06-09 GfE金属和材料有限公司 特别用于溅射靶、管状阴极等的制造的基于铜-铟-镓合金的镀膜材料
TW201114933A (en) * 2009-04-14 2011-05-01 Kobelco Res Inst Inc Cu-ga alloy sputtering target and process for manufacture thereof

Also Published As

Publication number Publication date
US20150354055A1 (en) 2015-12-10
EP2951332A1 (de) 2015-12-09
CN104968828B (zh) 2018-10-19
WO2014117190A1 (de) 2014-08-07
AT13564U1 (de) 2014-03-15
TW201439340A (zh) 2014-10-16
EP2951332B1 (de) 2017-05-31
JP2016513171A (ja) 2016-05-12
CN104968828A (zh) 2015-10-07
US10329661B2 (en) 2019-06-25
JP6393696B2 (ja) 2018-09-19

Similar Documents

Publication Publication Date Title
TWI627292B (zh) Ｃｕ-Ｇａ-Ｉｎ-Ｎａ靶
JP5144766B2 (ja) Ｃｕ−Ｇａ焼結体スパッタリングターゲット及び同ターゲットの製造方法
KR20050040938A (ko) 규화철 스퍼터링 타겟트 및 그 제조방법
JP5165100B1 (ja) スパッタリングターゲット及びその製造方法
US20120205242A1 (en) Cu-In-Ga-Se QUATERNARY ALLOY SPUTTERING TARGET
WO2016140113A1 (ja) 磁性材スパッタリングターゲット及びその製造方法
US10161032B2 (en) High-purity titanium ingots, manufacturing method therefor, and titanium sputtering target
US9273389B2 (en) Cu—In—Ga—Se quaternary alloy sputtering target
TWI565679B (zh) Oxide sintered body and sputtering target
US20170175252A1 (en) Sputtering Target Comprising Al-Te-Cu-Zr Alloy, and Method for Producing Same
JP5819323B2 (ja) Ｃｕ−Ｇａターゲット及びその製造方法
TWI675116B (zh) Ｔｉ－Ａｌ合金濺鍍靶
WO2012144655A1 (ja) スパッタリングターゲット及びその製造方法
JP2015045060A (ja) Ｃｕ系粉末の製造方法およびこれを用いたＣｕ系スパッタリングターゲット材の製造方法
TW201221674A (en) Crti-based alloy and sputtering target material, perpendicular magnetic recording medium, and processes for producing same
JP2014210943A (ja) Ｃｕ−Ｇａ合金ターゲット材およびその製造方法
JP6007840B2 (ja) Ｃｕ−Ｇａスパッタリングターゲット及びその製造方法
CN103421976A (zh) 氧含量低的Cu-Ga系合金粉末、Cu-Ga系合金靶材、以及靶材的制造方法
JP2017095781A (ja) Ｃｕ−Ｇａ合金スパッタリングターゲットおよびその製造方法
US20170306473A1 (en) Sputtering Target Comprising Al-Te-Cu-Zr-Based Alloy and Method of Manufacturing Same
JP2019056161A (ja) Ｉｎ合金スパッタリングターゲット及びＩｎ合金スパッタリングターゲットの製造方法