TWI620262B - 用於較小晶圓及晶圓片之晶圓載具 - Google Patents
用於較小晶圓及晶圓片之晶圓載具 Download PDFInfo
- Publication number
- TWI620262B TWI620262B TW106112325A TW106112325A TWI620262B TW I620262 B TWI620262 B TW I620262B TW 106112325 A TW106112325 A TW 106112325A TW 106112325 A TW106112325 A TW 106112325A TW I620262 B TWI620262 B TW I620262B
- Authority
- TW
- Taiwan
- Prior art keywords
- carrier
- region
- top surface
- electrode assembly
- substrate
- Prior art date
Links
- 235000012431 wafers Nutrition 0.000 title description 6
- 239000000758 substrate Substances 0.000 claims abstract description 150
- 239000000463 material Substances 0.000 claims description 24
- 238000004806 packaging method and process Methods 0.000 claims description 19
- 239000000919 ceramic Substances 0.000 claims description 6
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 claims description 5
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 1
- 239000002905 metal composite material Substances 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 28
- 238000000429 assembly Methods 0.000 abstract description 13
- 230000000712 assembly Effects 0.000 abstract description 13
- 238000012545 processing Methods 0.000 description 17
- 238000012546 transfer Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910010293 ceramic material Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 238000012356 Product development Methods 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- -1 quartz or glass) Chemical compound 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/6773—Conveying cassettes, containers or carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49998—Work holding
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/099,856 | 2013-12-06 | ||
| US14/099,856 US9460950B2 (en) | 2013-12-06 | 2013-12-06 | Wafer carrier for smaller wafers and wafer pieces |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201732992A TW201732992A (zh) | 2017-09-16 |
| TWI620262B true TWI620262B (zh) | 2018-04-01 |
Family
ID=53271907
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106112325A TWI620262B (zh) | 2013-12-06 | 2014-10-29 | 用於較小晶圓及晶圓片之晶圓載具 |
| TW103137451A TWI600110B (zh) | 2013-12-06 | 2014-10-29 | 用於較小晶圓及晶圓片之晶圓載具 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103137451A TWI600110B (zh) | 2013-12-06 | 2014-10-29 | 用於較小晶圓及晶圓片之晶圓載具 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US9460950B2 (OSRAM) |
| JP (1) | JP6656153B2 (OSRAM) |
| KR (2) | KR101757378B1 (OSRAM) |
| CN (1) | CN105793974B (OSRAM) |
| TW (2) | TWI620262B (OSRAM) |
| WO (1) | WO2015084463A1 (OSRAM) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9740111B2 (en) * | 2014-05-16 | 2017-08-22 | Applied Materials, Inc. | Electrostatic carrier for handling substrates for processing |
| KR20180109662A (ko) * | 2017-01-31 | 2018-10-08 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판 캐리어 및 기판을 프로세싱하는 방법 |
| TWI801390B (zh) * | 2017-06-19 | 2023-05-11 | 美商應用材料股份有限公司 | 用於高溫處理腔室的靜電吸座及其形成方法 |
| WO2018236670A1 (en) * | 2017-06-22 | 2018-12-27 | Applied Materials, Inc. | Electrostatic carrier for die bonding applications |
| CN111128834B (zh) * | 2018-10-31 | 2022-09-06 | 成都辰显光电有限公司 | 微元件转移设备及其制作方法 |
| CN109545731B (zh) * | 2018-11-20 | 2021-12-28 | 合肥京东方显示技术有限公司 | 转移头及其制备方法、转移方法、转移装置 |
| US12125728B2 (en) * | 2019-01-21 | 2024-10-22 | Applied Materials, Inc. | Substrate carrier |
| CN113646668A (zh) | 2019-04-11 | 2021-11-12 | 应用材料公司 | 用于光学装置的多深度膜 |
| CN110137130B (zh) * | 2019-05-15 | 2020-12-29 | 江苏鲁汶仪器有限公司 | 一种干法刻蚀系统用尺寸转换托盘 |
| JP7350438B2 (ja) * | 2019-09-09 | 2023-09-26 | 株式会社ディスコ | チャックテーブル及びチャックテーブルの製造方法 |
| KR102842706B1 (ko) * | 2020-05-18 | 2025-08-06 | 삼성디스플레이 주식회사 | 정전척 |
| CN112117230B (zh) * | 2020-10-19 | 2025-01-24 | 北京航空航天大学杭州创新研究院 | 高密度图案化加工的衬底-掩模板原位保持装置 |
| KR102327829B1 (ko) * | 2020-11-02 | 2021-11-17 | 주식회사 엘케이엔지니어링 | 정전척 |
| KR102739442B1 (ko) * | 2023-01-12 | 2024-12-10 | 엔지케이 인슐레이터 엘티디 | 웨이퍼 적재대 |
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| US6487063B1 (en) * | 1999-11-16 | 2002-11-26 | Nikon Corporation | Electrostatic wafer chuck, and charged-particle-beam microlithography apparatus and methods comprising same |
| JP2004200620A (ja) * | 2002-12-20 | 2004-07-15 | Kyocera Corp | 静電チャックおよびその製造方法 |
| JP2010165805A (ja) * | 2009-01-14 | 2010-07-29 | Toto Ltd | 静電チャックおよび静電チャックの製造方法 |
| JP2012248741A (ja) * | 2011-05-30 | 2012-12-13 | Panasonic Corp | プラズマ処理装置、搬送キャリア、及びプラズマ処理方法 |
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| JP2535663B2 (ja) * | 1990-10-02 | 1996-09-18 | 株式会社アビサレ | 掲示装置 |
| JP3095790B2 (ja) | 1991-01-22 | 2000-10-10 | 富士電機株式会社 | 静電チャック |
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| US9740111B2 (en) | 2014-05-16 | 2017-08-22 | Applied Materials, Inc. | Electrostatic carrier for handling substrates for processing |
| US10978334B2 (en) | 2014-09-02 | 2021-04-13 | Applied Materials, Inc. | Sealing structure for workpiece to substrate bonding in a processing chamber |
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2013
- 2013-12-06 US US14/099,856 patent/US9460950B2/en not_active Expired - Fee Related
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2014
- 2014-09-19 WO PCT/US2014/056607 patent/WO2015084463A1/en not_active Ceased
- 2014-09-19 JP JP2016536811A patent/JP6656153B2/ja active Active
- 2014-09-19 KR KR1020167017937A patent/KR101757378B1/ko active Active
- 2014-09-19 CN CN201480065526.6A patent/CN105793974B/zh active Active
- 2014-09-19 KR KR1020177004117A patent/KR20170020552A/ko not_active Ceased
- 2014-10-29 TW TW106112325A patent/TWI620262B/zh active
- 2014-10-29 TW TW103137451A patent/TWI600110B/zh active
-
2016
- 2016-08-26 US US15/249,009 patent/US10236201B2/en active Active
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| US6487063B1 (en) * | 1999-11-16 | 2002-11-26 | Nikon Corporation | Electrostatic wafer chuck, and charged-particle-beam microlithography apparatus and methods comprising same |
| JP2004200620A (ja) * | 2002-12-20 | 2004-07-15 | Kyocera Corp | 静電チャックおよびその製造方法 |
| JP2010165805A (ja) * | 2009-01-14 | 2010-07-29 | Toto Ltd | 静電チャックおよび静電チャックの製造方法 |
| JP2012248741A (ja) * | 2011-05-30 | 2012-12-13 | Panasonic Corp | プラズマ処理装置、搬送キャリア、及びプラズマ処理方法 |
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| Publication number | Publication date |
|---|---|
| US20150162231A1 (en) | 2015-06-11 |
| TW201732992A (zh) | 2017-09-16 |
| US10236201B2 (en) | 2019-03-19 |
| TWI600110B (zh) | 2017-09-21 |
| US20160365269A1 (en) | 2016-12-15 |
| KR20170020552A (ko) | 2017-02-22 |
| TW201523787A (zh) | 2015-06-16 |
| KR101757378B1 (ko) | 2017-07-12 |
| WO2015084463A1 (en) | 2015-06-11 |
| JP2017501572A (ja) | 2017-01-12 |
| KR20160093711A (ko) | 2016-08-08 |
| JP6656153B2 (ja) | 2020-03-04 |
| US9460950B2 (en) | 2016-10-04 |
| CN105793974B (zh) | 2020-01-10 |
| CN105793974A (zh) | 2016-07-20 |
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