TWI613719B - 用於執行濕蝕刻製程的系統及方法 - Google Patents
用於執行濕蝕刻製程的系統及方法 Download PDFInfo
- Publication number
- TWI613719B TWI613719B TW103105331A TW103105331A TWI613719B TW I613719 B TWI613719 B TW I613719B TW 103105331 A TW103105331 A TW 103105331A TW 103105331 A TW103105331 A TW 103105331A TW I613719 B TWI613719 B TW I613719B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- etching
- etch
- intensity
- station
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/55—Specular reflectivity
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H10P72/0412—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0418—Apparatus for fluid treatment for etching
- H10P72/0422—Apparatus for fluid treatment for etching for wet etching
- H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
- H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
- H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Pathology (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Biochemistry (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Evolutionary Computation (AREA)
- General Engineering & Computer Science (AREA)
- Geometry (AREA)
- Computer Hardware Design (AREA)
- Weting (AREA)
- Architecture (AREA)
- Software Systems (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/780,657 US9698062B2 (en) | 2013-02-28 | 2013-02-28 | System and method for performing a wet etching process |
| US13/780,657 | 2013-02-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201501192A TW201501192A (zh) | 2015-01-01 |
| TWI613719B true TWI613719B (zh) | 2018-02-01 |
Family
ID=51388548
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103105331A TWI613719B (zh) | 2013-02-28 | 2014-02-18 | 用於執行濕蝕刻製程的系統及方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9698062B2 (https=) |
| JP (2) | JP2016515300A (https=) |
| KR (1) | KR20150122661A (https=) |
| CN (1) | CN105209402B (https=) |
| SG (1) | SG11201506667WA (https=) |
| TW (1) | TWI613719B (https=) |
| WO (1) | WO2014133792A1 (https=) |
Families Citing this family (49)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9079210B2 (en) * | 2013-07-22 | 2015-07-14 | Infineon Technologies Ag | Methods for etching a workpiece, an apparatus configured to etch a workpiece, and a non-transitory computer readable medium |
| US10504758B2 (en) * | 2014-02-14 | 2019-12-10 | Taiwan Semiconductor Manufacturing Company Ltd. | Nozzle having real time inspection functions |
| KR20160045299A (ko) * | 2014-10-17 | 2016-04-27 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 장치, 연계 처리 시스템 및 기판 처리 방법 |
| US9870928B2 (en) * | 2014-10-31 | 2018-01-16 | Veeco Precision Surface Processing Llc | System and method for updating an arm scan profile through a graphical user interface |
| CN107258011A (zh) * | 2014-10-31 | 2017-10-17 | 维克精密表面处理有限责任公司 | 执行湿蚀刻工艺的系统和方法 |
| AT518466A3 (de) * | 2014-10-31 | 2019-07-15 | Veeco Precision Surface Proc Llc | System und Verfahren zum Ausführen eines Nass-Ätzprozesses |
| KR20160101760A (ko) * | 2015-02-17 | 2016-08-26 | 주식회사 엠엠테크 | 글라스 박형화 장치 |
| US20170221783A1 (en) * | 2016-01-28 | 2017-08-03 | Leonard TEDESCHI | Self-aware production wafers |
| US10443943B2 (en) | 2016-03-29 | 2019-10-15 | Veeco Precision Surface Processing Llc | Apparatus and method to control properties of fluid discharge via refrigerative exhaust |
| TWI738757B (zh) * | 2016-04-05 | 2021-09-11 | 美商維克儀器公司 | 經由化學的適應性峰化來控制蝕刻速率的裝置和方法 |
| CN116631902A (zh) * | 2016-05-06 | 2023-08-22 | 应用材料公司 | 用于蚀刻系统的晶片轮廓 |
| US10250258B2 (en) * | 2016-09-28 | 2019-04-02 | Nxp B.V. | Device and method for detecting semiconductor substrate thickness |
| JP6673173B2 (ja) * | 2016-12-12 | 2020-03-25 | 三菱電機株式会社 | 半導体装置の製造方法 |
| EP3590128A1 (en) * | 2017-03-03 | 2020-01-08 | Veeco Precision Surface Processing LLC | An apparatus and method for wafer thinning in advanced packaging applications |
| KR101977386B1 (ko) * | 2017-06-30 | 2019-05-13 | 무진전자 주식회사 | 웨이퍼 식각 장치 및 이를 사용하는 방법 |
| CN107369638B (zh) * | 2017-07-12 | 2020-11-27 | 上海华力微电子有限公司 | 刻蚀管控系统及其管控方法和刻蚀机台 |
| US10049904B1 (en) * | 2017-08-03 | 2018-08-14 | Applied Materials, Inc. | Method and system for moving a substrate |
| JP6525044B1 (ja) * | 2017-12-13 | 2019-06-05 | オムロン株式会社 | 監視システム、学習装置、学習方法、監視装置及び監視方法 |
| CN108220962A (zh) * | 2017-12-29 | 2018-06-29 | 深圳市华星光电技术有限公司 | 控制湿法蚀刻终点的装置及方法 |
| US11398379B2 (en) * | 2018-03-20 | 2022-07-26 | Tokyo Electron Limited | Platform and method of operating for integrated end-to-end self-aligned multi-patterning process |
| US11069583B2 (en) | 2018-06-20 | 2021-07-20 | Veeco Instruments Inc. | Apparatus and method for the minimization of undercut during a UBM etch process |
| TW202000993A (zh) | 2018-06-20 | 2020-01-01 | 美商維克精密表面處理股份有限公司 | 凸塊底層金屬蝕刻製程期間使底切最小化之裝置及方法 |
| JP7184547B2 (ja) * | 2018-06-27 | 2022-12-06 | 株式会社Screenホールディングス | 補正方法、基板処理装置、及び基板処理システム |
| KR102304793B1 (ko) | 2018-11-08 | 2021-09-27 | 한양대학교 산학협력단 | 2단자 사이리스터 메모리 소자의 제조방법 |
| WO2020154896A1 (en) * | 2019-01-29 | 2020-08-06 | Yangtze Memory Technologies Co., Ltd. | Intelligent customizable wet processing system |
| JP7166966B2 (ja) * | 2019-03-15 | 2022-11-08 | 株式会社Screenホールディングス | 処理条件選択方法、基板処理方法、基板製品製造方法、処理条件選択装置、コンピュータープログラム、および、記憶媒体 |
| JP7036085B2 (ja) * | 2019-04-17 | 2022-03-15 | 信越半導体株式会社 | シリコンウェーハのエッチング方法 |
| TWI704093B (zh) * | 2019-05-09 | 2020-09-11 | 辛耘企業股份有限公司 | 處理液容置裝置 |
| CN110349856B (zh) * | 2019-06-28 | 2021-04-27 | Tcl华星光电技术有限公司 | 湿式蚀刻方法及装置 |
| KR102705854B1 (ko) * | 2019-07-23 | 2024-09-11 | 에스케이하이닉스 주식회사 | 반도체 소자의 분석 시스템 및 방법 |
| JP7296300B2 (ja) * | 2019-10-29 | 2023-06-22 | 倉敷紡績株式会社 | 基板のエッチング方法 |
| JP7376317B2 (ja) * | 2019-10-30 | 2023-11-08 | 株式会社Screenホールディングス | 基板処理方法 |
| WO2021096712A1 (en) * | 2019-11-15 | 2021-05-20 | Veeco Instruments Inc. | An apparatus and method for the minimization of undercut during a ubm etch process |
| CN115135805B (zh) * | 2020-02-18 | 2025-04-01 | 株式会社Posco | 工艺控制系统及其操作方法 |
| TWI770785B (zh) * | 2021-01-22 | 2022-07-11 | 南亞科技股份有限公司 | 半導體製造系統、測量裝置及半導體製造方法 |
| CN113050564B (zh) * | 2021-03-12 | 2022-04-26 | 中国科学院近代物理研究所 | 核孔膜蚀刻线自反馈联动生产控制装置 |
| US11619594B2 (en) * | 2021-04-28 | 2023-04-04 | Applied Materials, Inc. | Multiple reflectometry for measuring etch parameters |
| US12004307B2 (en) | 2021-06-09 | 2024-06-04 | International Business Machines Corporation | Short or near short etch rework |
| JP7696241B2 (ja) * | 2021-07-06 | 2025-06-20 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
| CN114063479B (zh) * | 2021-11-12 | 2024-01-23 | 华科电子股份有限公司 | 应用于蚀刻机的多路输出模块的射频电源控制方法及系统 |
| DE102021131839B4 (de) * | 2021-12-02 | 2023-11-23 | Hueck Rheinische Gmbh | Verfahren zum Herstellen eines Presswerkzeugs mit tiefer Strukturierung |
| CN114628268B (zh) * | 2022-05-12 | 2022-07-29 | 广东气派科技有限公司 | 一种防超时的芯片产品腐球检验工艺 |
| JP2024043611A (ja) * | 2022-09-20 | 2024-04-02 | 東京エレクトロン株式会社 | エッチング制御システム、及びエッチング制御方法 |
| JP2024043646A (ja) * | 2022-09-20 | 2024-04-02 | 東京エレクトロン株式会社 | エッチング制御システム、及びエッチング制御方法 |
| CN116504682B (zh) * | 2023-06-20 | 2024-04-02 | 深圳市鲁光电子科技有限公司 | 一种碳化硅mosfet制备用蚀刻装置 |
| CN116666198B (zh) * | 2023-07-26 | 2024-01-12 | 恒超源洗净科技(深圳)有限公司 | 一种半导体器件全自动超声波清洗方法及系统 |
| CN117174621B (zh) * | 2023-10-30 | 2023-12-26 | 江苏卓玉智能科技有限公司 | 一种晶圆蚀刻工艺的流量控制方法及系统 |
| CN118486616B (zh) * | 2024-07-11 | 2024-09-27 | 江苏浦丹光电技术有限公司 | 一种光学调制器芯片加工用刻蚀装置 |
| CN120738645B (zh) * | 2025-09-05 | 2025-10-31 | 江苏希尔芯半导体设备有限公司 | Oled面板掩膜板蚀刻装置 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030084918A1 (en) * | 2001-11-07 | 2003-05-08 | Kim Yong Bae | Integrated dry-wet processing apparatus and method for removing material on semiconductor wafers using dry-wet processes |
| US20060191637A1 (en) * | 2001-06-21 | 2006-08-31 | John Zajac | Etching Apparatus and Process with Thickness and Uniformity Control |
| US20080185103A1 (en) * | 2005-11-29 | 2008-08-07 | International Business Machines Corporation | Control of Critical Dimensions of Etched Structures on Semiconductor Wafers |
| US20100267217A1 (en) * | 2009-04-20 | 2010-10-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Backside Process for a Substrate |
| US20110261371A1 (en) * | 2010-03-12 | 2011-10-27 | Precitec Optronik Gmbh | Apparatus and Method for Monitoring a Thickness of a Silicon Wafer with a Highly Doped Layer |
| US20120285482A1 (en) * | 2007-12-07 | 2012-11-15 | Fontana Technology | Method For Cleaning Wafers Using A Polycarboxylate Solution |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5846643A (ja) * | 1981-09-12 | 1983-03-18 | Mitsubishi Electric Corp | ウエハ処理法 |
| JPH07145484A (ja) * | 1993-11-19 | 1995-06-06 | Ebara Corp | 二酸化ケイ素被膜の製造方法及び装置 |
| JPH11220005A (ja) * | 1997-11-26 | 1999-08-10 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
| JPH11251289A (ja) * | 1998-02-27 | 1999-09-17 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
| TW380284B (en) * | 1998-09-09 | 2000-01-21 | Promos Technologies Inc | Method for improving etching uniformity during a wet etching process |
| JP2002134466A (ja) * | 2000-10-25 | 2002-05-10 | Sony Corp | 半導体装置の製造方法 |
| US7128803B2 (en) * | 2002-06-28 | 2006-10-31 | Lam Research Corporation | Integration of sensor based metrology into semiconductor processing tools |
| JP2004335923A (ja) * | 2003-05-12 | 2004-11-25 | Sony Corp | エッチング方法およびエッチング装置 |
| JP2007500941A (ja) * | 2003-07-31 | 2007-01-18 | エフエスアイ インターナショナル インコーポレイテッド | 高度に均一な酸化物層、とりわけ超薄層の調節された成長 |
| DE102004054566B4 (de) * | 2004-11-11 | 2008-04-30 | Siltronic Ag | Verfahren und Vorrichtung zum Einebnen einer Halbleiterscheibe sowie Halbleiterscheibe mit verbesserter Ebenheit |
| US8882787B2 (en) * | 2005-03-02 | 2014-11-11 | St. Jude Medical, Cardiology Division, Inc. | Tissue anchor apparatus |
| JP4921913B2 (ja) * | 2006-10-02 | 2012-04-25 | 株式会社東芝 | 基板洗浄方法 |
| JP2008177329A (ja) * | 2007-01-18 | 2008-07-31 | Mitsubishi Electric Corp | ウエットエッチング方法 |
| US7972969B2 (en) * | 2008-03-06 | 2011-07-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and apparatus for thinning a substrate |
| JP5458525B2 (ja) * | 2008-08-05 | 2014-04-02 | 株式会社Sumco | Soiウェーハの製造方法 |
| JP2011071415A (ja) * | 2009-09-28 | 2011-04-07 | Covalent Materials Corp | シリコンウエハの製造方法 |
| KR101233687B1 (ko) * | 2010-10-28 | 2013-02-15 | 삼성디스플레이 주식회사 | 유리 기판 식각 장치 |
| US8455984B2 (en) * | 2010-11-15 | 2013-06-04 | Nanya Technology Corp. | Integrated circuit structure and method of forming the same |
| US20120285483A1 (en) * | 2011-05-12 | 2012-11-15 | Li-Chung Liu | Method of cleaning a wafer |
| CN102923962B (zh) * | 2012-10-26 | 2015-06-17 | 航天科工惯性技术有限公司 | 一种加速度计摆片平桥的蚀刻方法 |
-
2013
- 2013-02-28 US US13/780,657 patent/US9698062B2/en active Active
-
2014
- 2014-02-14 SG SG11201506667WA patent/SG11201506667WA/en unknown
- 2014-02-14 CN CN201480013838.2A patent/CN105209402B/zh not_active Expired - Fee Related
- 2014-02-14 JP JP2015560205A patent/JP2016515300A/ja active Pending
- 2014-02-14 WO PCT/US2014/016479 patent/WO2014133792A1/en not_active Ceased
- 2014-02-14 KR KR1020157023130A patent/KR20150122661A/ko not_active Ceased
- 2014-02-18 TW TW103105331A patent/TWI613719B/zh active
-
2019
- 2019-04-26 JP JP2019085304A patent/JP2019153803A/ja active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060191637A1 (en) * | 2001-06-21 | 2006-08-31 | John Zajac | Etching Apparatus and Process with Thickness and Uniformity Control |
| US20030084918A1 (en) * | 2001-11-07 | 2003-05-08 | Kim Yong Bae | Integrated dry-wet processing apparatus and method for removing material on semiconductor wafers using dry-wet processes |
| US20080185103A1 (en) * | 2005-11-29 | 2008-08-07 | International Business Machines Corporation | Control of Critical Dimensions of Etched Structures on Semiconductor Wafers |
| US20120285482A1 (en) * | 2007-12-07 | 2012-11-15 | Fontana Technology | Method For Cleaning Wafers Using A Polycarboxylate Solution |
| US20100267217A1 (en) * | 2009-04-20 | 2010-10-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Backside Process for a Substrate |
| US20110261371A1 (en) * | 2010-03-12 | 2011-10-27 | Precitec Optronik Gmbh | Apparatus and Method for Monitoring a Thickness of a Silicon Wafer with a Highly Doped Layer |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105209402B (zh) | 2018-07-24 |
| US9698062B2 (en) | 2017-07-04 |
| TW201501192A (zh) | 2015-01-01 |
| SG11201506667WA (en) | 2015-09-29 |
| CN105209402A (zh) | 2015-12-30 |
| JP2019153803A (ja) | 2019-09-12 |
| US20140242731A1 (en) | 2014-08-28 |
| WO2014133792A1 (en) | 2014-09-04 |
| JP2016515300A (ja) | 2016-05-26 |
| KR20150122661A (ko) | 2015-11-02 |
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