TWI613719B - 用於執行濕蝕刻製程的系統及方法 - Google Patents

用於執行濕蝕刻製程的系統及方法 Download PDF

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Publication number
TWI613719B
TWI613719B TW103105331A TW103105331A TWI613719B TW I613719 B TWI613719 B TW I613719B TW 103105331 A TW103105331 A TW 103105331A TW 103105331 A TW103105331 A TW 103105331A TW I613719 B TWI613719 B TW I613719B
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Taiwan
Prior art keywords
substrate
etching
etch
intensity
station
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TW103105331A
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English (en)
Chinese (zh)
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TW201501192A (zh
Inventor
Laura Mauer
羅拉 摩爾
Elena Lawrence
伊蓮娜 羅倫斯
John Taddei
約翰 泰迪
Ramey Youssef
雷米 尤賽夫
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Solid State Equipment Llc
固態設備有限公司
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Application filed by Solid State Equipment Llc, 固態設備有限公司 filed Critical Solid State Equipment Llc
Publication of TW201501192A publication Critical patent/TW201501192A/zh
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Publication of TWI613719B publication Critical patent/TWI613719B/zh

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55Specular reflectivity
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00Computer-aided design [CAD]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0402Apparatus for fluid treatment
    • H10P72/0406Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0412Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0402Apparatus for fluid treatment
    • H10P72/0406Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0402Apparatus for fluid treatment
    • H10P72/0418Apparatus for fluid treatment for etching
    • H10P72/0422Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604Process monitoring, e.g. flow or thickness monitoring
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Pathology (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Biochemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Evolutionary Computation (AREA)
  • General Engineering & Computer Science (AREA)
  • Geometry (AREA)
  • Computer Hardware Design (AREA)
  • Weting (AREA)
  • Architecture (AREA)
  • Software Systems (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
TW103105331A 2013-02-28 2014-02-18 用於執行濕蝕刻製程的系統及方法 TWI613719B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/780,657 US9698062B2 (en) 2013-02-28 2013-02-28 System and method for performing a wet etching process
US13/780,657 2013-02-28

Publications (2)

Publication Number Publication Date
TW201501192A TW201501192A (zh) 2015-01-01
TWI613719B true TWI613719B (zh) 2018-02-01

Family

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Family Applications (1)

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TW103105331A TWI613719B (zh) 2013-02-28 2014-02-18 用於執行濕蝕刻製程的系統及方法

Country Status (7)

Country Link
US (1) US9698062B2 (https=)
JP (2) JP2016515300A (https=)
KR (1) KR20150122661A (https=)
CN (1) CN105209402B (https=)
SG (1) SG11201506667WA (https=)
TW (1) TWI613719B (https=)
WO (1) WO2014133792A1 (https=)

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CN110349856B (zh) * 2019-06-28 2021-04-27 Tcl华星光电技术有限公司 湿式蚀刻方法及装置
KR102705854B1 (ko) * 2019-07-23 2024-09-11 에스케이하이닉스 주식회사 반도체 소자의 분석 시스템 및 방법
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Also Published As

Publication number Publication date
CN105209402B (zh) 2018-07-24
US9698062B2 (en) 2017-07-04
TW201501192A (zh) 2015-01-01
SG11201506667WA (en) 2015-09-29
CN105209402A (zh) 2015-12-30
JP2019153803A (ja) 2019-09-12
US20140242731A1 (en) 2014-08-28
WO2014133792A1 (en) 2014-09-04
JP2016515300A (ja) 2016-05-26
KR20150122661A (ko) 2015-11-02

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