KR20150122661A - 습식 에칭 공정을 수행하기 위한 시스템 및 방법 - Google Patents

습식 에칭 공정을 수행하기 위한 시스템 및 방법 Download PDF

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Publication number
KR20150122661A
KR20150122661A KR1020157023130A KR20157023130A KR20150122661A KR 20150122661 A KR20150122661 A KR 20150122661A KR 1020157023130 A KR1020157023130 A KR 1020157023130A KR 20157023130 A KR20157023130 A KR 20157023130A KR 20150122661 A KR20150122661 A KR 20150122661A
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South Korea
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substrate
etch
etching
intensity
wafer
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KR1020157023130A
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English (en)
Korean (ko)
Inventor
로라 마우어
엘레나 로렌스
존 타데이
래미 유세프
Original Assignee
비코 프리시젼 서피스 프로세싱 엘엘씨
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Publication of KR20150122661A publication Critical patent/KR20150122661A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H01L21/30604—
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55—Specular reflectivity
    • G06F17/50—
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • H01L21/67046—
    • H01L21/67051—
    • H01L21/6708—
    • H01L21/67253—
    • H01L22/12—
    • H01L22/26—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0412—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Pathology (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Biochemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Evolutionary Computation (AREA)
  • General Engineering & Computer Science (AREA)
  • Geometry (AREA)
  • Computer Hardware Design (AREA)
  • Weting (AREA)
  • Architecture (AREA)
  • Software Systems (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
KR1020157023130A 2013-02-28 2014-02-14 습식 에칭 공정을 수행하기 위한 시스템 및 방법 Ceased KR20150122661A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/780,657 US9698062B2 (en) 2013-02-28 2013-02-28 System and method for performing a wet etching process
US13/780,657 2013-02-28
PCT/US2014/016479 WO2014133792A1 (en) 2013-02-28 2014-02-14 A system and method for performing a wet etching process

Publications (1)

Publication Number Publication Date
KR20150122661A true KR20150122661A (ko) 2015-11-02

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157023130A Ceased KR20150122661A (ko) 2013-02-28 2014-02-14 습식 에칭 공정을 수행하기 위한 시스템 및 방법

Country Status (7)

Country Link
US (1) US9698062B2 (https=)
JP (2) JP2016515300A (https=)
KR (1) KR20150122661A (https=)
CN (1) CN105209402B (https=)
SG (1) SG11201506667WA (https=)
TW (1) TWI613719B (https=)
WO (1) WO2014133792A1 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
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KR20180067408A (ko) * 2016-12-12 2018-06-20 미쓰비시덴키 가부시키가이샤 반도체 장치의 제조 방법
KR20180133939A (ko) * 2016-05-06 2018-12-17 어플라이드 머티어리얼스, 인코포레이티드 에칭 시스템을 위한 웨이퍼 프로파일링
KR20200053399A (ko) 2018-11-08 2020-05-18 한양대학교 산학협력단 2단자 사이리스터 메모리 소자의 제조방법
KR20200130642A (ko) * 2019-05-09 2020-11-19 사이언테크 코포레이션 기판을 처리하기 위한 장치 및 상기 장치를 이용한 기판을 식각하는 절차를 제어하기 위한 방법

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KR20160045299A (ko) * 2014-10-17 2016-04-27 도쿄엘렉트론가부시키가이샤 기판 처리 장치, 연계 처리 시스템 및 기판 처리 방법
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AT518466A3 (de) * 2014-10-31 2019-07-15 Veeco Precision Surface Proc Llc System und Verfahren zum Ausführen eines Nass-Ätzprozesses
KR20160101760A (ko) * 2015-02-17 2016-08-26 주식회사 엠엠테크 글라스 박형화 장치
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CN107369638B (zh) * 2017-07-12 2020-11-27 上海华力微电子有限公司 刻蚀管控系统及其管控方法和刻蚀机台
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CN108220962A (zh) * 2017-12-29 2018-06-29 深圳市华星光电技术有限公司 控制湿法蚀刻终点的装置及方法
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US11069583B2 (en) 2018-06-20 2021-07-20 Veeco Instruments Inc. Apparatus and method for the minimization of undercut during a UBM etch process
TW202000993A (zh) 2018-06-20 2020-01-01 美商維克精密表面處理股份有限公司 凸塊底層金屬蝕刻製程期間使底切最小化之裝置及方法
JP7184547B2 (ja) * 2018-06-27 2022-12-06 株式会社Ｓｃｒｅｅｎホールディングス 補正方法、基板処理装置、及び基板処理システム
WO2020154896A1 (en) * 2019-01-29 2020-08-06 Yangtze Memory Technologies Co., Ltd. Intelligent customizable wet processing system
JP7166966B2 (ja) * 2019-03-15 2022-11-08 株式会社Ｓｃｒｅｅｎホールディングス 処理条件選択方法、基板処理方法、基板製品製造方法、処理条件選択装置、コンピュータープログラム、および、記憶媒体
JP7036085B2 (ja) * 2019-04-17 2022-03-15 信越半導体株式会社 シリコンウェーハのエッチング方法
CN110349856B (zh) * 2019-06-28 2021-04-27 Tcl华星光电技术有限公司 湿式蚀刻方法及装置
KR102705854B1 (ko) * 2019-07-23 2024-09-11 에스케이하이닉스 주식회사 반도체 소자의 분석 시스템 및 방법
JP7296300B2 (ja) * 2019-10-29 2023-06-22 倉敷紡績株式会社 基板のエッチング方法
JP7376317B2 (ja) * 2019-10-30 2023-11-08 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
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CN115135805B (zh) * 2020-02-18 2025-04-01 株式会社Posco 工艺控制系统及其操作方法
TWI770785B (zh) * 2021-01-22 2022-07-11 南亞科技股份有限公司 半導體製造系統、測量裝置及半導體製造方法
CN113050564B (zh) * 2021-03-12 2022-04-26 中国科学院近代物理研究所 核孔膜蚀刻线自反馈联动生产控制装置
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CN114063479B (zh) * 2021-11-12 2024-01-23 华科电子股份有限公司 应用于蚀刻机的多路输出模块的射频电源控制方法及系统
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KR20180133939A (ko) * 2016-05-06 2018-12-17 어플라이드 머티어리얼스, 인코포레이티드 에칭 시스템을 위한 웨이퍼 프로파일링
US11501986B2 (en) 2016-05-06 2022-11-15 Applied Materials, Inc. Wafer profiling for etching system
KR20180067408A (ko) * 2016-12-12 2018-06-20 미쓰비시덴키 가부시키가이샤 반도체 장치의 제조 방법
KR20200053399A (ko) 2018-11-08 2020-05-18 한양대학교 산학협력단 2단자 사이리스터 메모리 소자의 제조방법
KR20200130642A (ko) * 2019-05-09 2020-11-19 사이언테크 코포레이션 기판을 처리하기 위한 장치 및 상기 장치를 이용한 기판을 식각하는 절차를 제어하기 위한 방법

Also Published As

Publication number Publication date
CN105209402B (zh) 2018-07-24
TWI613719B (zh) 2018-02-01
US9698062B2 (en) 2017-07-04
TW201501192A (zh) 2015-01-01
SG11201506667WA (en) 2015-09-29
CN105209402A (zh) 2015-12-30
JP2019153803A (ja) 2019-09-12
US20140242731A1 (en) 2014-08-28
WO2014133792A1 (en) 2014-09-04
JP2016515300A (ja) 2016-05-26

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