CN105209402B - 用于执行湿法蚀刻工艺的系统和方法 - Google Patents

用于执行湿法蚀刻工艺的系统和方法 Download PDF

Info

Publication number
CN105209402B
CN105209402B CN201480013838.2A CN201480013838A CN105209402B CN 105209402 B CN105209402 B CN 105209402B CN 201480013838 A CN201480013838 A CN 201480013838A CN 105209402 B CN105209402 B CN 105209402B
Authority
CN
China
Prior art keywords
substrate
etching
etch
wafer
radial position
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201480013838.2A
Other languages
English (en)
Chinese (zh)
Other versions
CN105209402A (zh
Inventor
L·莫尔
E·劳伦斯
J·塔代伊
R·优素福
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Veeco Instruments Inc
Original Assignee
Solid State Equipment Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solid State Equipment Corp filed Critical Solid State Equipment Corp
Publication of CN105209402A publication Critical patent/CN105209402A/zh
Application granted granted Critical
Publication of CN105209402B publication Critical patent/CN105209402B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55—Specular reflectivity
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0412—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Pathology (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Biochemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Evolutionary Computation (AREA)
  • General Engineering & Computer Science (AREA)
  • Geometry (AREA)
  • Computer Hardware Design (AREA)
  • Weting (AREA)
  • Architecture (AREA)
  • Software Systems (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
CN201480013838.2A 2013-02-28 2014-02-14 用于执行湿法蚀刻工艺的系统和方法 Expired - Fee Related CN105209402B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/780,657 US9698062B2 (en) 2013-02-28 2013-02-28 System and method for performing a wet etching process
US13/780,657 2013-02-28
PCT/US2014/016479 WO2014133792A1 (en) 2013-02-28 2014-02-14 A system and method for performing a wet etching process

Publications (2)

Publication Number Publication Date
CN105209402A CN105209402A (zh) 2015-12-30
CN105209402B true CN105209402B (zh) 2018-07-24

Family

ID=51388548

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480013838.2A Expired - Fee Related CN105209402B (zh) 2013-02-28 2014-02-14 用于执行湿法蚀刻工艺的系统和方法

Country Status (7)

Country Link
US (1) US9698062B2 (https=)
JP (2) JP2016515300A (https=)
KR (1) KR20150122661A (https=)
CN (1) CN105209402B (https=)
SG (1) SG11201506667WA (https=)
TW (1) TWI613719B (https=)
WO (1) WO2014133792A1 (https=)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9079210B2 (en) * 2013-07-22 2015-07-14 Infineon Technologies Ag Methods for etching a workpiece, an apparatus configured to etch a workpiece, and a non-transitory computer readable medium
US10504758B2 (en) * 2014-02-14 2019-12-10 Taiwan Semiconductor Manufacturing Company Ltd. Nozzle having real time inspection functions
KR20160045299A (ko) * 2014-10-17 2016-04-27 도쿄엘렉트론가부시키가이샤 기판 처리 장치, 연계 처리 시스템 및 기판 처리 방법
US9870928B2 (en) * 2014-10-31 2018-01-16 Veeco Precision Surface Processing Llc System and method for updating an arm scan profile through a graphical user interface
CN107258011A (zh) * 2014-10-31 2017-10-17 维克精密表面处理有限责任公司 执行湿蚀刻工艺的系统和方法
AT518466A3 (de) * 2014-10-31 2019-07-15 Veeco Precision Surface Proc Llc System und Verfahren zum Ausführen eines Nass-Ätzprozesses
KR20160101760A (ko) * 2015-02-17 2016-08-26 주식회사 엠엠테크 글라스 박형화 장치
US20170221783A1 (en) * 2016-01-28 2017-08-03 Leonard TEDESCHI Self-aware production wafers
US10443943B2 (en) 2016-03-29 2019-10-15 Veeco Precision Surface Processing Llc Apparatus and method to control properties of fluid discharge via refrigerative exhaust
TWI738757B (zh) * 2016-04-05 2021-09-11 美商維克儀器公司 經由化學的適應性峰化來控制蝕刻速率的裝置和方法
CN116631902A (zh) * 2016-05-06 2023-08-22 应用材料公司 用于蚀刻系统的晶片轮廓
US10250258B2 (en) * 2016-09-28 2019-04-02 Nxp B.V. Device and method for detecting semiconductor substrate thickness
JP6673173B2 (ja) * 2016-12-12 2020-03-25 三菱電機株式会社 半導体装置の製造方法
EP3590128A1 (en) * 2017-03-03 2020-01-08 Veeco Precision Surface Processing LLC An apparatus and method for wafer thinning in advanced packaging applications
KR101977386B1 (ko) * 2017-06-30 2019-05-13 무진전자 주식회사 웨이퍼 식각 장치 및 이를 사용하는 방법
CN107369638B (zh) * 2017-07-12 2020-11-27 上海华力微电子有限公司 刻蚀管控系统及其管控方法和刻蚀机台
US10049904B1 (en) * 2017-08-03 2018-08-14 Applied Materials, Inc. Method and system for moving a substrate
JP6525044B1 (ja) * 2017-12-13 2019-06-05 オムロン株式会社 監視システム、学習装置、学習方法、監視装置及び監視方法
CN108220962A (zh) * 2017-12-29 2018-06-29 深圳市华星光电技术有限公司 控制湿法蚀刻终点的装置及方法
US11398379B2 (en) * 2018-03-20 2022-07-26 Tokyo Electron Limited Platform and method of operating for integrated end-to-end self-aligned multi-patterning process
US11069583B2 (en) 2018-06-20 2021-07-20 Veeco Instruments Inc. Apparatus and method for the minimization of undercut during a UBM etch process
TW202000993A (zh) 2018-06-20 2020-01-01 美商維克精密表面處理股份有限公司 凸塊底層金屬蝕刻製程期間使底切最小化之裝置及方法
JP7184547B2 (ja) * 2018-06-27 2022-12-06 株式会社Ｓｃｒｅｅｎホールディングス 補正方法、基板処理装置、及び基板処理システム
KR102304793B1 (ko) 2018-11-08 2021-09-27 한양대학교 산학협력단 2단자 사이리스터 메모리 소자의 제조방법
WO2020154896A1 (en) * 2019-01-29 2020-08-06 Yangtze Memory Technologies Co., Ltd. Intelligent customizable wet processing system
JP7166966B2 (ja) * 2019-03-15 2022-11-08 株式会社Ｓｃｒｅｅｎホールディングス 処理条件選択方法、基板処理方法、基板製品製造方法、処理条件選択装置、コンピュータープログラム、および、記憶媒体
JP7036085B2 (ja) * 2019-04-17 2022-03-15 信越半導体株式会社 シリコンウェーハのエッチング方法
TWI704093B (zh) * 2019-05-09 2020-09-11 辛耘企業股份有限公司 處理液容置裝置
CN110349856B (zh) * 2019-06-28 2021-04-27 Tcl华星光电技术有限公司 湿式蚀刻方法及装置
KR102705854B1 (ko) * 2019-07-23 2024-09-11 에스케이하이닉스 주식회사 반도체 소자의 분석 시스템 및 방법
JP7296300B2 (ja) * 2019-10-29 2023-06-22 倉敷紡績株式会社 基板のエッチング方法
JP7376317B2 (ja) * 2019-10-30 2023-11-08 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
WO2021096712A1 (en) * 2019-11-15 2021-05-20 Veeco Instruments Inc. An apparatus and method for the minimization of undercut during a ubm etch process
CN115135805B (zh) * 2020-02-18 2025-04-01 株式会社Posco 工艺控制系统及其操作方法
TWI770785B (zh) * 2021-01-22 2022-07-11 南亞科技股份有限公司 半導體製造系統、測量裝置及半導體製造方法
CN113050564B (zh) * 2021-03-12 2022-04-26 中国科学院近代物理研究所 核孔膜蚀刻线自反馈联动生产控制装置
US11619594B2 (en) * 2021-04-28 2023-04-04 Applied Materials, Inc. Multiple reflectometry for measuring etch parameters
US12004307B2 (en) 2021-06-09 2024-06-04 International Business Machines Corporation Short or near short etch rework
JP7696241B2 (ja) * 2021-07-06 2025-06-20 東京エレクトロン株式会社 基板処理装置および基板処理方法
CN114063479B (zh) * 2021-11-12 2024-01-23 华科电子股份有限公司 应用于蚀刻机的多路输出模块的射频电源控制方法及系统
DE102021131839B4 (de) * 2021-12-02 2023-11-23 Hueck Rheinische Gmbh Verfahren zum Herstellen eines Presswerkzeugs mit tiefer Strukturierung
CN114628268B (zh) * 2022-05-12 2022-07-29 广东气派科技有限公司 一种防超时的芯片产品腐球检验工艺
JP2024043611A (ja) * 2022-09-20 2024-04-02 東京エレクトロン株式会社 エッチング制御システム、及びエッチング制御方法
JP2024043646A (ja) * 2022-09-20 2024-04-02 東京エレクトロン株式会社 エッチング制御システム、及びエッチング制御方法
CN116504682B (zh) * 2023-06-20 2024-04-02 深圳市鲁光电子科技有限公司 一种碳化硅mosfet制备用蚀刻装置
CN116666198B (zh) * 2023-07-26 2024-01-12 恒超源洗净科技(深圳)有限公司 一种半导体器件全自动超声波清洗方法及系统
CN117174621B (zh) * 2023-10-30 2023-12-26 江苏卓玉智能科技有限公司 一种晶圆蚀刻工艺的流量控制方法及系统
CN118486616B (zh) * 2024-07-11 2024-09-27 江苏浦丹光电技术有限公司 一种光学调制器芯片加工用刻蚀装置
CN120738645B (zh) * 2025-09-05 2025-10-31 江苏希尔芯半导体设备有限公司 Oled面板掩膜板蚀刻装置

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5846643A (ja) * 1981-09-12 1983-03-18 Mitsubishi Electric Corp ウエハ処理法
JPH07145484A (ja) * 1993-11-19 1995-06-06 Ebara Corp 二酸化ケイ素被膜の製造方法及び装置
JPH11220005A (ja) * 1997-11-26 1999-08-10 Dainippon Screen Mfg Co Ltd 基板処理装置
JPH11251289A (ja) * 1998-02-27 1999-09-17 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
TW380284B (en) * 1998-09-09 2000-01-21 Promos Technologies Inc Method for improving etching uniformity during a wet etching process
JP2002134466A (ja) * 2000-10-25 2002-05-10 Sony Corp 半導体装置の製造方法
US20060191637A1 (en) * 2001-06-21 2006-08-31 John Zajac Etching Apparatus and Process with Thickness and Uniformity Control
US20030084918A1 (en) * 2001-11-07 2003-05-08 Kim Yong Bae Integrated dry-wet processing apparatus and method for removing material on semiconductor wafers using dry-wet processes
US7128803B2 (en) * 2002-06-28 2006-10-31 Lam Research Corporation Integration of sensor based metrology into semiconductor processing tools
JP2004335923A (ja) * 2003-05-12 2004-11-25 Sony Corp エッチング方法およびエッチング装置
JP2007500941A (ja) * 2003-07-31 2007-01-18 エフエスアイ インターナショナル インコーポレイテッド 高度に均一な酸化物層、とりわけ超薄層の調節された成長
DE102004054566B4 (de) * 2004-11-11 2008-04-30 Siltronic Ag Verfahren und Vorrichtung zum Einebnen einer Halbleiterscheibe sowie Halbleiterscheibe mit verbesserter Ebenheit
US8882787B2 (en) * 2005-03-02 2014-11-11 St. Jude Medical, Cardiology Division, Inc. Tissue anchor apparatus
US20070122920A1 (en) 2005-11-29 2007-05-31 Bornstein William B Method for improved control of critical dimensions of etched structures on semiconductor wafers
JP4921913B2 (ja) * 2006-10-02 2012-04-25 株式会社東芝 基板洗浄方法
JP2008177329A (ja) * 2007-01-18 2008-07-31 Mitsubishi Electric Corp ウエットエッチング方法
MY150211A (en) 2007-12-07 2013-12-13 Fontana Technology Particle removal cleaning method and composition
US7972969B2 (en) * 2008-03-06 2011-07-05 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for thinning a substrate
JP5458525B2 (ja) * 2008-08-05 2014-04-02 株式会社Ｓｕｍｃｏ Ｓｏｉウェーハの製造方法
US8691664B2 (en) * 2009-04-20 2014-04-08 Taiwan Semiconductor Manufacturing Company, Ltd. Backside process for a substrate
JP2011071415A (ja) * 2009-09-28 2011-04-07 Covalent Materials Corp シリコンウエハの製造方法
GB2478590A (en) * 2010-03-12 2011-09-14 Precitec Optronik Gmbh Apparatus and method for monitoring a thickness of a silicon wafer
KR101233687B1 (ko) * 2010-10-28 2013-02-15 삼성디스플레이 주식회사 유리 기판 식각 장치
US8455984B2 (en) * 2010-11-15 2013-06-04 Nanya Technology Corp. Integrated circuit structure and method of forming the same
US20120285483A1 (en) * 2011-05-12 2012-11-15 Li-Chung Liu Method of cleaning a wafer
CN102923962B (zh) * 2012-10-26 2015-06-17 航天科工惯性技术有限公司 一种加速度计摆片平桥的蚀刻方法

Also Published As

Publication number Publication date
TWI613719B (zh) 2018-02-01
US9698062B2 (en) 2017-07-04
TW201501192A (zh) 2015-01-01
SG11201506667WA (en) 2015-09-29
CN105209402A (zh) 2015-12-30
JP2019153803A (ja) 2019-09-12
US20140242731A1 (en) 2014-08-28
WO2014133792A1 (en) 2014-09-04
JP2016515300A (ja) 2016-05-26
KR20150122661A (ko) 2015-11-02

Similar Documents

Publication Publication Date Title
CN105209402B (zh) 用于执行湿法蚀刻工艺的系统和方法
US10553502B2 (en) Two etch method for achieving a wafer thickness profile
US9870928B2 (en) System and method for updating an arm scan profile through a graphical user interface
US10541180B2 (en) Apparatus and method for wafer thinning in advanced packaging applications
EP3811398B1 (en) Apparatus and method for the minimization of undercut during a ubm etch process
TWI738757B (zh) 經由化學的適應性峰化來控制蝕刻速率的裝置和方法
US12198946B2 (en) Intelligent customizable wet processing system
TWI861273B (zh) 凸塊底層金屬蝕刻製程期間使底切最小化之裝置及方法
US11069583B2 (en) Apparatus and method for the minimization of undercut during a UBM etch process
CN119604966A (zh) 基板处理装置和膜厚估计方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20200122

Address after: New York State, USA

Patentee after: Veeco Instruments Inc.

Address before: Pennsylvania, USA

Patentee before: VEECO PRECISION SURFACE PROCESSING LLC

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20180724

Termination date: 20200214