SG11201506667WA - A system and method for performing a wet etching process - Google Patents

A system and method for performing a wet etching process

Info

Publication number
SG11201506667WA
SG11201506667WA SG11201506667WA SG11201506667WA SG11201506667WA SG 11201506667W A SG11201506667W A SG 11201506667WA SG 11201506667W A SG11201506667W A SG 11201506667WA SG 11201506667W A SG11201506667W A SG 11201506667WA SG 11201506667W A SG11201506667W A SG 11201506667WA
Authority
SG
Singapore
Prior art keywords
etching process
wet etching
wet
etching
Prior art date
Application number
SG11201506667WA
Other languages
English (en)
Inventor
Laura Mauer
Elena Lawrence
John Taddei
Ramey Youssef
Original Assignee
Veeco Prec Surface Proc Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Veeco Prec Surface Proc Llc filed Critical Veeco Prec Surface Proc Llc
Publication of SG11201506667WA publication Critical patent/SG11201506667WA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55—Specular reflectivity
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0412—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Pathology (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Biochemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Evolutionary Computation (AREA)
  • General Engineering & Computer Science (AREA)
  • Geometry (AREA)
  • Computer Hardware Design (AREA)
  • Weting (AREA)
  • Architecture (AREA)
  • Software Systems (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
SG11201506667WA 2013-02-28 2014-02-14 A system and method for performing a wet etching process SG11201506667WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/780,657 US9698062B2 (en) 2013-02-28 2013-02-28 System and method for performing a wet etching process
PCT/US2014/016479 WO2014133792A1 (en) 2013-02-28 2014-02-14 A system and method for performing a wet etching process

Publications (1)

Publication Number Publication Date
SG11201506667WA true SG11201506667WA (en) 2015-09-29

Family

ID=51388548

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201506667WA SG11201506667WA (en) 2013-02-28 2014-02-14 A system and method for performing a wet etching process

Country Status (7)

Country Link
US (1) US9698062B2 (https=)
JP (2) JP2016515300A (https=)
KR (1) KR20150122661A (https=)
CN (1) CN105209402B (https=)
SG (1) SG11201506667WA (https=)
TW (1) TWI613719B (https=)
WO (1) WO2014133792A1 (https=)

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AT518466A3 (de) * 2014-10-31 2019-07-15 Veeco Precision Surface Proc Llc System und Verfahren zum Ausführen eines Nass-Ätzprozesses
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CN110349856B (zh) * 2019-06-28 2021-04-27 Tcl华星光电技术有限公司 湿式蚀刻方法及装置
KR102705854B1 (ko) * 2019-07-23 2024-09-11 에스케이하이닉스 주식회사 반도체 소자의 분석 시스템 및 방법
JP7296300B2 (ja) * 2019-10-29 2023-06-22 倉敷紡績株式会社 基板のエッチング方法
JP7376317B2 (ja) * 2019-10-30 2023-11-08 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
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CN115135805B (zh) * 2020-02-18 2025-04-01 株式会社Posco 工艺控制系统及其操作方法
TWI770785B (zh) * 2021-01-22 2022-07-11 南亞科技股份有限公司 半導體製造系統、測量裝置及半導體製造方法
CN113050564B (zh) * 2021-03-12 2022-04-26 中国科学院近代物理研究所 核孔膜蚀刻线自反馈联动生产控制装置
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Also Published As

Publication number Publication date
CN105209402B (zh) 2018-07-24
TWI613719B (zh) 2018-02-01
US9698062B2 (en) 2017-07-04
TW201501192A (zh) 2015-01-01
CN105209402A (zh) 2015-12-30
JP2019153803A (ja) 2019-09-12
US20140242731A1 (en) 2014-08-28
WO2014133792A1 (en) 2014-09-04
JP2016515300A (ja) 2016-05-26
KR20150122661A (ko) 2015-11-02

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