TWI602324B - 晶圓等級之發光二極體陣列 - Google Patents

晶圓等級之發光二極體陣列 Download PDF

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Publication number
TWI602324B
TWI602324B TW102128318A TW102128318A TWI602324B TW I602324 B TWI602324 B TW I602324B TW 102128318 A TW102128318 A TW 102128318A TW 102128318 A TW102128318 A TW 102128318A TW I602324 B TWI602324 B TW I602324B
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TW
Taiwan
Prior art keywords
emitting diode
light emitting
light
interlayer insulating
pad
Prior art date
Application number
TW102128318A
Other languages
English (en)
Chinese (zh)
Other versions
TW201414024A (zh
Inventor
張鍾敏
蔡鐘炫
李俊燮
徐大雄
金賢兒
盧元英
姜珉佑
Original Assignee
首爾偉傲世有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020130088712A external-priority patent/KR101893579B1/ko
Priority claimed from KR1020130088714A external-priority patent/KR101893578B1/ko
Application filed by 首爾偉傲世有限公司 filed Critical 首爾偉傲世有限公司
Publication of TW201414024A publication Critical patent/TW201414024A/zh
Application granted granted Critical
Publication of TWI602324B publication Critical patent/TWI602324B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
TW102128318A 2012-09-07 2013-08-07 晶圓等級之發光二極體陣列 TWI602324B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20120099263 2012-09-07
KR20120101716 2012-09-13
KR1020130088712A KR101893579B1 (ko) 2012-09-07 2013-07-26 웨이퍼 레벨의 발광 다이오드 어레이
KR1020130088714A KR101893578B1 (ko) 2012-09-13 2013-07-26 웨이퍼 레벨의 발광 다이오드 어레이

Publications (2)

Publication Number Publication Date
TW201414024A TW201414024A (zh) 2014-04-01
TWI602324B true TWI602324B (zh) 2017-10-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW102128318A TWI602324B (zh) 2012-09-07 2013-08-07 晶圓等級之發光二極體陣列

Country Status (6)

Country Link
US (1) US9412922B2 (https=)
CN (3) CN109638032B (https=)
DE (2) DE202013012470U1 (https=)
IN (1) IN2015KN00387A (https=)
TW (1) TWI602324B (https=)
WO (1) WO2014038794A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI873097B (zh) * 2018-06-20 2025-02-21 法商艾勒迪亞公司 包含二極體陣列之光電元件

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TWI873097B (zh) * 2018-06-20 2025-02-21 法商艾勒迪亞公司 包含二極體陣列之光電元件

Also Published As

Publication number Publication date
TW201414024A (zh) 2014-04-01
CN104620399A (zh) 2015-05-13
WO2014038794A1 (ko) 2014-03-13
IN2015KN00387A (https=) 2015-07-10
DE202013012470U1 (de) 2017-01-12
US20150280086A1 (en) 2015-10-01
CN109638032A (zh) 2019-04-16
CN111223973B (zh) 2023-08-22
CN104620399B (zh) 2020-02-21
CN111223973A (zh) 2020-06-02
DE112013003887T5 (de) 2015-05-07
US9412922B2 (en) 2016-08-09
CN109638032B (zh) 2023-10-27

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