IN2015KN00387A - - Google Patents

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Publication number
IN2015KN00387A
IN2015KN00387A IN387KON2015A IN2015KN00387A IN 2015KN00387 A IN2015KN00387 A IN 2015KN00387A IN 387KON2015 A IN387KON2015 A IN 387KON2015A IN 2015KN00387 A IN2015KN00387 A IN 2015KN00387A
Authority
IN
India
Prior art keywords
leds
top electrodes
electrically connected
led
series
Prior art date
Application number
Inventor
Jong Min Jang
Jong Hyeon Chae
Joon Sup Lee
Dae Woong Suh
Hyun A Kim
Won Young Roh
Min Woo Kang
Original Assignee
Seoul Viosys Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020130088714A external-priority patent/KR101893578B1/en
Priority claimed from KR1020130088712A external-priority patent/KR101893579B1/en
Application filed by Seoul Viosys Co Ltd filed Critical Seoul Viosys Co Ltd
Publication of IN2015KN00387A publication Critical patent/IN2015KN00387A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

The present invention relates to a wafer level light-emitting diode (LED) array. An LED array according to one embodiment includes: a growth substrate; a plurality of LEDs arranged on the substrate, each of which has a first semiconductor layer, an activation layer, and a second semiconductor layer; a plurality of top electrodes arrayed on the plurality of LEDs formed from the same material, and electrically connected respectively to the first semiconductor layers of the corresponding LEDs; and first and second pads arranged on the top electrodes. One or more of the top electrodes are electrically connected to the second semiconductor layers of adjacent LEDs, wherein the others of the top electrodes are insulated from the second semiconductor layers of the adjacent LEDs, the LEDs are connected in series by the top electrodes, the first pad is electrically connected to an input LED from among the LEDs connected in series and the second pad is electrically connected to an output LED from among the LEDs connected in series. Accordingly, a flip chip type LED array can be provided which can be driven with a high voltage.
IN387KON2015 2012-09-07 2013-08-06 IN2015KN00387A (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
KR20120099263 2012-09-07
KR20120101716 2012-09-13
KR1020130088714A KR101893578B1 (en) 2012-09-13 2013-07-26 Light emitting diode array on wafer level
KR1020130088712A KR101893579B1 (en) 2012-09-07 2013-07-26 Light emitting diode array on wafer level
PCT/KR2013/007105 WO2014038794A1 (en) 2012-09-07 2013-08-06 Wafer level light-emitting diode array

Publications (1)

Publication Number Publication Date
IN2015KN00387A true IN2015KN00387A (en) 2015-07-10

Family

ID=50237367

Family Applications (1)

Application Number Title Priority Date Filing Date
IN387KON2015 IN2015KN00387A (en) 2012-09-07 2013-08-06

Country Status (6)

Country Link
US (1) US9412922B2 (en)
CN (3) CN104620399B (en)
DE (2) DE112013003887T5 (en)
IN (1) IN2015KN00387A (en)
TW (1) TWI602324B (en)
WO (1) WO2014038794A1 (en)

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US9318529B2 (en) * 2012-09-07 2016-04-19 Seoul Viosys Co., Ltd. Wafer level light-emitting diode array
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US9728698B2 (en) 2014-06-03 2017-08-08 Seoul Viosys Co., Ltd. Light emitting device package having improved heat dissipation efficiency
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Also Published As

Publication number Publication date
CN111223973A (en) 2020-06-02
WO2014038794A1 (en) 2014-03-13
CN104620399A (en) 2015-05-13
CN109638032A (en) 2019-04-16
CN104620399B (en) 2020-02-21
CN111223973B (en) 2023-08-22
TW201414024A (en) 2014-04-01
DE202013012470U1 (en) 2017-01-12
US9412922B2 (en) 2016-08-09
DE112013003887T5 (en) 2015-05-07
US20150280086A1 (en) 2015-10-01
TWI602324B (en) 2017-10-11
CN109638032B (en) 2023-10-27

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