TWI597494B - 圖案化缺陷之以輪廓爲基礎的陣列檢查 - Google Patents

圖案化缺陷之以輪廓爲基礎的陣列檢查 Download PDF

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Publication number
TWI597494B
TWI597494B TW103103669A TW103103669A TWI597494B TW I597494 B TWI597494 B TW I597494B TW 103103669 A TW103103669 A TW 103103669A TW 103103669 A TW103103669 A TW 103103669A TW I597494 B TWI597494 B TW I597494B
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Taiwan
Prior art keywords
image
cell
contour
array
generating
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TW103103669A
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English (en)
Chinese (zh)
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TW201439526A (zh
Inventor
倩 慧 陳
艾潔 古普傑
坦惠 哈
王建偉
楊海東
克里斯多夫 麥可 馬希爾
萊爾特 麥可Ｊ 梵
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克萊譚克公司
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/001—Industrial image inspection using an image reference approach
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
    • G01N2223/6116—Specific applications or type of materials patterned objects; electronic devices semiconductor wafer
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10056—Microscopic image
    • G06T2207/10061—Microscopic image from scanning electron microscope
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Quality & Reliability (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Theoretical Computer Science (AREA)
  • Biochemistry (AREA)
  • Pathology (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
TW103103669A 2013-01-29 2014-01-29 圖案化缺陷之以輪廓爲基礎的陣列檢查 TWI597494B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361757807P 2013-01-29 2013-01-29
US14/062,761 US9483819B2 (en) 2013-01-29 2013-10-24 Contour-based array inspection of patterned defects

Publications (2)

Publication Number Publication Date
TW201439526A TW201439526A (zh) 2014-10-16
TWI597494B true TWI597494B (zh) 2017-09-01

Family

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TW103103669A TWI597494B (zh) 2013-01-29 2014-01-29 圖案化缺陷之以輪廓爲基礎的陣列檢查

Country Status (6)

Country Link
US (1) US9483819B2 (enExample)
EP (1) EP2951859B1 (enExample)
JP (1) JP6173487B2 (enExample)
KR (1) KR102013481B1 (enExample)
TW (1) TWI597494B (enExample)
WO (1) WO2014120828A1 (enExample)

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JP2019020292A (ja) * 2017-07-19 2019-02-07 株式会社ニューフレアテクノロジー パターン検査装置及びパターン検査方法
WO2019070600A1 (en) * 2017-10-02 2019-04-11 Applied Materials Israel Ltd. DETERMINING A CRITICAL DIMENSION VARIATION OF A PATTERN
US10572991B2 (en) * 2017-11-07 2020-02-25 Kla-Tencor Corporation System and method for aligning semiconductor device reference images and test images
TWI759628B (zh) * 2018-09-18 2022-04-01 荷蘭商Ａｓｍｌ荷蘭公司 用於偵測快速充電裝置中時間相依缺陷的設備及方法
CN109343303B (zh) * 2018-10-24 2020-11-17 华中科技大学 一种基于内锥镜面扫描全景成像的微钻视觉检测方法及装置
US11610296B2 (en) * 2020-01-09 2023-03-21 Kla Corporation Projection and distance segmentation algorithm for wafer defect detection
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CN115147329B (zh) * 2021-03-29 2025-03-07 北京小米移动软件有限公司 一种柔性面板的修复方法、装置、设备及存储介质
JP7624355B2 (ja) 2021-06-22 2025-01-30 株式会社日立ハイテク 試料観察装置および方法
JP7700248B2 (ja) * 2021-08-27 2025-06-30 株式会社日立ハイテク コンピュータシステムおよび解析方法
CN115511834A (zh) * 2022-09-28 2022-12-23 广东利元亨智能装备股份有限公司 电芯对齐度检测方法、控制器、检测系统以及存储介质
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11733614B2 (en) 2018-03-23 2023-08-22 Asml Netherlands B.V. Method of metrology and associated apparatuses
TWI836362B (zh) * 2018-03-23 2024-03-21 荷蘭商Ａｓｍｌ荷蘭公司 度量衡方法及相關聯裝置

Also Published As

Publication number Publication date
US20140212024A1 (en) 2014-07-31
KR20150112019A (ko) 2015-10-06
US9483819B2 (en) 2016-11-01
EP2951859B1 (en) 2019-09-18
JP6173487B2 (ja) 2017-08-02
TW201439526A (zh) 2014-10-16
JP2016507058A (ja) 2016-03-07
WO2014120828A1 (en) 2014-08-07
EP2951859A1 (en) 2015-12-09
KR102013481B1 (ko) 2019-08-22
EP2951859A4 (en) 2016-09-28

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