KR102013481B1 - 패터닝된 결함들의 컨투어 기반의 어레이 검사 - Google Patents

패터닝된 결함들의 컨투어 기반의 어레이 검사 Download PDF

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KR102013481B1
KR102013481B1 KR1020157023400A KR20157023400A KR102013481B1 KR 102013481 B1 KR102013481 B1 KR 102013481B1 KR 1020157023400 A KR1020157023400 A KR 1020157023400A KR 20157023400 A KR20157023400 A KR 20157023400A KR 102013481 B1 KR102013481 B1 KR 102013481B1
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cell
image
contour
array
substrate
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KR20150112019A (ko
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아담 치엔 후이 첸
아자이 굽타
탄 하
지안웨이 왕
희동 양
크리스토퍼 마허
리에트 마이클 반
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케이엘에이 코포레이션
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/001—Industrial image inspection using an image reference approach
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
    • G01N2223/6116—Specific applications or type of materials patterned objects; electronic devices semiconductor wafer
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10056—Microscopic image
    • G06T2207/10061—Microscopic image from scanning electron microscope
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Quality & Reliability (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Theoretical Computer Science (AREA)
  • Biochemistry (AREA)
  • Pathology (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
KR1020157023400A 2013-01-29 2014-01-29 패터닝된 결함들의 컨투어 기반의 어레이 검사 Active KR102013481B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361757807P 2013-01-29 2013-01-29
US61/757,807 2013-01-29
US14/062,761 US9483819B2 (en) 2013-01-29 2013-10-24 Contour-based array inspection of patterned defects
US14/062,761 2013-10-24
PCT/US2014/013675 WO2014120828A1 (en) 2013-01-29 2014-01-29 Contour-based array inspection of patterned defects

Publications (2)

Publication Number Publication Date
KR20150112019A KR20150112019A (ko) 2015-10-06
KR102013481B1 true KR102013481B1 (ko) 2019-08-22

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Country Status (6)

Country Link
US (1) US9483819B2 (enExample)
EP (1) EP2951859B1 (enExample)
JP (1) JP6173487B2 (enExample)
KR (1) KR102013481B1 (enExample)
TW (1) TWI597494B (enExample)
WO (1) WO2014120828A1 (enExample)

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US11727552B2 (en) 2020-02-05 2023-08-15 Samsung Electronics Co., Ltd. Method of verifying optical proximity effect correction

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US9483819B2 (en) * 2013-01-29 2016-11-01 Kla-Tencor Corporation Contour-based array inspection of patterned defects
US11205119B2 (en) * 2015-12-22 2021-12-21 Applied Materials Israel Ltd. Method of deep learning-based examination of a semiconductor specimen and system thereof
KR102304317B1 (ko) * 2016-12-01 2021-09-24 에이에스엠엘 네델란즈 비.브이. 패턴 구성을 위한 방법 및 시스템
JP2019020292A (ja) * 2017-07-19 2019-02-07 株式会社ニューフレアテクノロジー パターン検査装置及びパターン検査方法
WO2019070600A1 (en) * 2017-10-02 2019-04-11 Applied Materials Israel Ltd. DETERMINING A CRITICAL DIMENSION VARIATION OF A PATTERN
US10572991B2 (en) * 2017-11-07 2020-02-25 Kla-Tencor Corporation System and method for aligning semiconductor device reference images and test images
EP3543791A1 (en) * 2018-03-23 2019-09-25 ASML Netherlands B.V. Method of metrology and associated apparatuses
TWI759628B (zh) * 2018-09-18 2022-04-01 荷蘭商Ａｓｍｌ荷蘭公司 用於偵測快速充電裝置中時間相依缺陷的設備及方法
CN109343303B (zh) * 2018-10-24 2020-11-17 华中科技大学 一种基于内锥镜面扫描全景成像的微钻视觉检测方法及装置
US11610296B2 (en) * 2020-01-09 2023-03-21 Kla Corporation Projection and distance segmentation algorithm for wafer defect detection
US11748872B2 (en) * 2020-08-31 2023-09-05 KLA Corp. Setting up inspection of a specimen
CN115147329B (zh) * 2021-03-29 2025-03-07 北京小米移动软件有限公司 一种柔性面板的修复方法、装置、设备及存储介质
JP7624355B2 (ja) 2021-06-22 2025-01-30 株式会社日立ハイテク 試料観察装置および方法
JP7700248B2 (ja) * 2021-08-27 2025-06-30 株式会社日立ハイテク コンピュータシステムおよび解析方法
CN115511834A (zh) * 2022-09-28 2022-12-23 广东利元亨智能装备股份有限公司 电芯对齐度检测方法、控制器、检测系统以及存储介质
US12190500B2 (en) * 2023-03-05 2025-01-07 KLA Corp. Detecting defects on specimens

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JP2003126071A (ja) 2001-09-11 2003-05-07 Eastman Kodak Co 部分的な放射線画像をステッチして全体画像を復元する方法
US20130002849A1 (en) 2004-05-07 2013-01-03 Kaoru Sakai Method and apparatus for pattern inspection

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11727552B2 (en) 2020-02-05 2023-08-15 Samsung Electronics Co., Ltd. Method of verifying optical proximity effect correction

Also Published As

Publication number Publication date
TWI597494B (zh) 2017-09-01
US20140212024A1 (en) 2014-07-31
KR20150112019A (ko) 2015-10-06
US9483819B2 (en) 2016-11-01
EP2951859B1 (en) 2019-09-18
JP6173487B2 (ja) 2017-08-02
TW201439526A (zh) 2014-10-16
JP2016507058A (ja) 2016-03-07
WO2014120828A1 (en) 2014-08-07
EP2951859A1 (en) 2015-12-09
EP2951859A4 (en) 2016-09-28

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