JP6173487B2 - パターン化された欠陥の輪郭ベースのアレイ検査 - Google Patents

パターン化された欠陥の輪郭ベースのアレイ検査 Download PDF

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JP6173487B2
JP6173487B2 JP2015556115A JP2015556115A JP6173487B2 JP 6173487 B2 JP6173487 B2 JP 6173487B2 JP 2015556115 A JP2015556115 A JP 2015556115A JP 2015556115 A JP2015556115 A JP 2015556115A JP 6173487 B2 JP6173487 B2 JP 6173487B2
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image
cell
contour
array
generating
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JP2016507058A (ja
JP2016507058A5 (enExample
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アダム チエン−フェイ チェン
アダム チエン−フェイ チェン
アジャイ グプタ
アジャイ グプタ
タン ハー
タン ハー
ジエンウェイ ワン
ジエンウェイ ワン
ホーァドン ヤン
ホーァドン ヤン
クリストファー マール
クリストファー マール
リート マイケル ヴァン
リート マイケル ヴァン
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KLA Corp
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KLA Corp
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/001—Industrial image inspection using an image reference approach
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
    • G01N2223/6116—Specific applications or type of materials patterned objects; electronic devices semiconductor wafer
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10056—Microscopic image
    • G06T2207/10061—Microscopic image from scanning electron microscope
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Quality & Reliability (AREA)
  • Analytical Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Biochemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2015556115A 2013-01-29 2014-01-29 パターン化された欠陥の輪郭ベースのアレイ検査 Active JP6173487B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361757807P 2013-01-29 2013-01-29
US61/757,807 2013-01-29
US14/062,761 2013-10-24
US14/062,761 US9483819B2 (en) 2013-01-29 2013-10-24 Contour-based array inspection of patterned defects
PCT/US2014/013675 WO2014120828A1 (en) 2013-01-29 2014-01-29 Contour-based array inspection of patterned defects

Publications (3)

Publication Number Publication Date
JP2016507058A JP2016507058A (ja) 2016-03-07
JP2016507058A5 JP2016507058A5 (enExample) 2017-03-02
JP6173487B2 true JP6173487B2 (ja) 2017-08-02

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JP2015556115A Active JP6173487B2 (ja) 2013-01-29 2014-01-29 パターン化された欠陥の輪郭ベースのアレイ検査

Country Status (6)

Country Link
US (1) US9483819B2 (enExample)
EP (1) EP2951859B1 (enExample)
JP (1) JP6173487B2 (enExample)
KR (1) KR102013481B1 (enExample)
TW (1) TWI597494B (enExample)
WO (1) WO2014120828A1 (enExample)

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US11176307B2 (en) * 2016-12-01 2021-11-16 Asml Netherlands B.V. Method and system for pattern configuration
JP2019020292A (ja) * 2017-07-19 2019-02-07 株式会社ニューフレアテクノロジー パターン検査装置及びパターン検査方法
WO2019070600A1 (en) * 2017-10-02 2019-04-11 Applied Materials Israel Ltd. DETERMINING A CRITICAL DIMENSION VARIATION OF A PATTERN
US10572991B2 (en) 2017-11-07 2020-02-25 Kla-Tencor Corporation System and method for aligning semiconductor device reference images and test images
EP3543791A1 (en) 2018-03-23 2019-09-25 ASML Netherlands B.V. Method of metrology and associated apparatuses
TWI759628B (zh) * 2018-09-18 2022-04-01 荷蘭商Ａｓｍｌ荷蘭公司 用於偵測快速充電裝置中時間相依缺陷的設備及方法
CN109343303B (zh) * 2018-10-24 2020-11-17 华中科技大学 一种基于内锥镜面扫描全景成像的微钻视觉检测方法及装置
US11610296B2 (en) * 2020-01-09 2023-03-21 Kla Corporation Projection and distance segmentation algorithm for wafer defect detection
KR102889846B1 (ko) 2020-02-05 2025-11-26 삼성전자주식회사 광학적 근접 효과 보정의 검증 방법
US11748872B2 (en) * 2020-08-31 2023-09-05 KLA Corp. Setting up inspection of a specimen
CN115147329B (zh) * 2021-03-29 2025-03-07 北京小米移动软件有限公司 一种柔性面板的修复方法、装置、设备及存储介质
US12524867B2 (en) * 2021-05-21 2026-01-13 Kla Corporation System and method for optical wafer characterization with image up-sampling
JP7624355B2 (ja) 2021-06-22 2025-01-30 株式会社日立ハイテク 試料観察装置および方法
KR20240035886A (ko) * 2021-08-27 2024-03-18 주식회사 히타치하이테크 컴퓨터 시스템 및 해석 방법
CN115511834A (zh) * 2022-09-28 2022-12-23 广东利元亨智能装备股份有限公司 电芯对齐度检测方法、控制器、检测系统以及存储介质
US12190500B2 (en) * 2023-03-05 2025-01-07 KLA Corp. Detecting defects on specimens

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JP5422411B2 (ja) 2010-01-22 2014-02-19 株式会社日立ハイテクノロジーズ 荷電粒子線装置によって得られた画像データの輪郭線抽出方法、及び輪郭線抽出装置
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Also Published As

Publication number Publication date
EP2951859B1 (en) 2019-09-18
KR20150112019A (ko) 2015-10-06
US9483819B2 (en) 2016-11-01
TWI597494B (zh) 2017-09-01
EP2951859A1 (en) 2015-12-09
TW201439526A (zh) 2014-10-16
EP2951859A4 (en) 2016-09-28
JP2016507058A (ja) 2016-03-07
US20140212024A1 (en) 2014-07-31
KR102013481B1 (ko) 2019-08-22
WO2014120828A1 (en) 2014-08-07

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