TWI593118B - 增加金屬氧化物半導體層之導電性的方法 - Google Patents

增加金屬氧化物半導體層之導電性的方法 Download PDF

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Publication number
TWI593118B
TWI593118B TW102115340A TW102115340A TWI593118B TW I593118 B TWI593118 B TW I593118B TW 102115340 A TW102115340 A TW 102115340A TW 102115340 A TW102115340 A TW 102115340A TW I593118 B TWI593118 B TW I593118B
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TW
Taiwan
Prior art keywords
metal oxide
oxide semiconductor
semiconductor layer
layer
metal
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TW102115340A
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English (en)
Chinese (zh)
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TW201403828A (zh
Inventor
羅伯特 牧樂
Original Assignee
愛美科公司
荷蘭應用自然科學研究組織
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Application filed by 愛美科公司, 荷蘭應用自然科學研究組織 filed Critical 愛美科公司
Publication of TW201403828A publication Critical patent/TW201403828A/zh
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Publication of TWI593118B publication Critical patent/TWI593118B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

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  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
TW102115340A 2012-05-09 2013-04-30 增加金屬氧化物半導體層之導電性的方法 TWI593118B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261644855P 2012-05-09 2012-05-09
US201261699146P 2012-09-10 2012-09-10

Publications (2)

Publication Number Publication Date
TW201403828A TW201403828A (zh) 2014-01-16
TWI593118B true TWI593118B (zh) 2017-07-21

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TW102115340A TWI593118B (zh) 2012-05-09 2013-04-30 增加金屬氧化物半導體層之導電性的方法

Country Status (5)

Country Link
JP (1) JP6077109B2 (enExample)
KR (1) KR102056407B1 (enExample)
CN (1) CN104272461B (enExample)
TW (1) TWI593118B (enExample)
WO (1) WO2013167374A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI548100B (zh) * 2015-01-08 2016-09-01 友達光電股份有限公司 薄膜電晶體、顯示面板以及其製造方法
TWI649900B (zh) * 2015-02-04 2019-02-01 Everlight Electronics Co., Ltd. Ｌｅｄ封裝結構及其製造方法
KR102522595B1 (ko) 2016-04-29 2023-04-17 삼성디스플레이 주식회사 트랜지스터 패널 및 그 제조 방법
CN106024608B (zh) * 2016-05-26 2019-04-02 京东方科技集团股份有限公司 一种薄膜晶体管及其制作方法、衬底基板及显示装置
CN106941082B (zh) * 2017-03-21 2020-02-28 京东方科技集团股份有限公司 氧化物半导体及氧化物薄膜晶体管制备方法和显示面板
JPWO2018215878A1 (ja) * 2017-05-26 2020-03-26 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
CN107706199B (zh) * 2017-09-30 2020-05-05 深圳市华星光电半导体显示技术有限公司 一种薄膜晶体管阵列基板的制作方法
CN108172630A (zh) 2017-12-29 2018-06-15 深圳市华星光电技术有限公司 一种薄膜晶体管及其制备方法
CN113972236B (zh) * 2020-07-23 2024-12-10 合肥鑫晟光电科技有限公司 显示基板及其制备方法、显示装置
CN112420849B (zh) * 2020-11-09 2024-08-20 昆山龙腾光电股份有限公司 金属氧化物薄膜晶体管及其制作方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5475097A (en) * 1977-11-26 1979-06-15 Matsushita Electric Ind Co Ltd Providing lower resistance of conductive material
KR100958006B1 (ko) * 2008-06-18 2010-05-17 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치
JP2010010175A (ja) * 2008-06-24 2010-01-14 Konica Minolta Holdings Inc 薄膜トランジスタおよび薄膜トランジスタの製造方法
US8367486B2 (en) * 2009-02-05 2013-02-05 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the transistor
EP2256795B1 (en) * 2009-05-29 2014-11-19 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for oxide semiconductor device
EP2478554B1 (en) * 2009-09-16 2016-06-08 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
JP5708910B2 (ja) * 2010-03-30 2015-04-30 ソニー株式会社 薄膜トランジスタおよびその製造方法、並びに表示装置
KR101319200B1 (ko) * 2010-06-01 2013-10-16 샤프 가부시키가이샤 박막 트랜지스터
JP5403527B2 (ja) * 2010-07-02 2014-01-29 合同会社先端配線材料研究所 半導体装置
JP2012015436A (ja) * 2010-07-05 2012-01-19 Sony Corp 薄膜トランジスタおよび表示装置

Also Published As

Publication number Publication date
CN104272461B (zh) 2017-08-08
WO2013167374A1 (en) 2013-11-14
KR20150018501A (ko) 2015-02-23
CN104272461A (zh) 2015-01-07
TW201403828A (zh) 2014-01-16
JP6077109B2 (ja) 2017-02-08
KR102056407B1 (ko) 2019-12-16
JP2015519745A (ja) 2015-07-09

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