TWI585842B - Substrate processing device - Google Patents

Substrate processing device Download PDF

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Publication number
TWI585842B
TWI585842B TW104132199A TW104132199A TWI585842B TW I585842 B TWI585842 B TW I585842B TW 104132199 A TW104132199 A TW 104132199A TW 104132199 A TW104132199 A TW 104132199A TW I585842 B TWI585842 B TW I585842B
Authority
TW
Taiwan
Prior art keywords
nozzle
gas
substrate
liquid
concave portion
Prior art date
Application number
TW104132199A
Other languages
English (en)
Chinese (zh)
Other versions
TW201633392A (zh
Inventor
林航之介
大田垣崇
Original Assignee
芝浦機械電子裝置股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 芝浦機械電子裝置股份有限公司 filed Critical 芝浦機械電子裝置股份有限公司
Publication of TW201633392A publication Critical patent/TW201633392A/zh
Application granted granted Critical
Publication of TWI585842B publication Critical patent/TWI585842B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7608—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
    • B08B2203/02—Details of machines or methods for cleaning by the force of jets or sprays
    • B08B2203/0288—Ultra or megasonic jets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW104132199A 2014-09-30 2015-09-30 Substrate processing device TWI585842B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014201917 2014-09-30

Publications (2)

Publication Number Publication Date
TW201633392A TW201633392A (zh) 2016-09-16
TWI585842B true TWI585842B (zh) 2017-06-01

Family

ID=55630666

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104132199A TWI585842B (zh) 2014-09-30 2015-09-30 Substrate processing device

Country Status (6)

Country Link
US (3) US10607863B2 (https=)
JP (3) JP6625058B2 (https=)
KR (2) KR102391753B1 (https=)
CN (2) CN113363187B (https=)
TW (1) TWI585842B (https=)
WO (1) WO2016052642A1 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI622091B (zh) * 2015-06-18 2018-04-21 思可林集團股份有限公司 基板處理裝置
JP6779769B2 (ja) * 2016-12-07 2020-11-04 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP6804325B2 (ja) * 2017-02-09 2020-12-23 東京エレクトロン株式会社 液処理装置
CN109056085A (zh) * 2018-08-01 2018-12-21 南通纺织丝绸产业技术研究院 熔喷喷嘴结构
JP7221657B2 (ja) * 2018-11-12 2023-02-14 キオクシア株式会社 基板処理装置
CN113409699B (zh) * 2020-03-16 2024-11-15 重庆康佳光电科技有限公司 一种便于修复的led显示器及其修复方法
JP7634405B2 (ja) * 2021-03-30 2025-02-21 芝浦メカトロニクス株式会社 基板処理装置
JP7556328B2 (ja) * 2021-05-21 2024-09-26 株式会社Sumco 半導体ウェーハの洗浄装置、半導体ウェーハの洗浄方法およびシリコンウェーハの製造方法
JP7584361B2 (ja) * 2021-06-17 2024-11-15 株式会社荏原製作所 基板洗浄装置、基板処理装置
KR102535766B1 (ko) * 2021-08-24 2023-05-26 (주)디바이스이엔지 백 노즐 어셈블리를 포함하는 기판 처리장치
JP7794621B2 (ja) * 2021-12-02 2026-01-06 株式会社ディスコ 超音波水噴射装置
JP2023095206A (ja) * 2021-12-24 2023-07-06 芝浦メカトロニクス株式会社 基板処理装置
JP2024145228A (ja) * 2023-03-31 2024-10-15 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
EP4489064A1 (en) * 2023-07-03 2025-01-08 Unity Semiconductor Substrate dimension adapter
CN117133685A (zh) * 2023-08-18 2023-11-28 华海清科股份有限公司 一种晶圆清洗装置
CN118925962B (zh) * 2024-10-12 2025-02-28 浙江丽水中欣晶圆半导体科技有限公司 一种用于洗净机上并具有彻底清洁的喷头
CN119650464A (zh) * 2024-12-02 2025-03-18 西安奕斯伟材料科技股份有限公司 硅片清洗系统

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5960555A (en) * 1996-07-24 1999-10-05 Applied Materials, Inc. Method and apparatus for purging the back side of a substrate during chemical vapor processing
TW498396B (en) * 1999-07-27 2002-08-11 Shibaura Mechatronics Corp Spin processing apparatus
TW201137934A (en) * 2009-12-25 2011-11-01 Tokyo Electron Ltd Substrate processing method, storage medium and substrate processing apparatus

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61178187U (https=) * 1985-04-26 1986-11-06
JPH07105336B2 (ja) * 1992-08-27 1995-11-13 日本電気株式会社 レジスト現像方法
KR100613919B1 (ko) 1999-07-26 2006-08-18 동경 엘렉트론 주식회사 기판세정구, 기판세정장치 및 기판세정방법
JP4111299B2 (ja) * 1999-07-26 2008-07-02 東京エレクトロン株式会社 基板洗浄具，基板洗浄装置及び基板洗浄方法
JP3535053B2 (ja) * 1999-09-09 2004-06-07 東京エレクトロン株式会社 現像処理装置及び現像処理方法
JP3802446B2 (ja) * 2002-05-15 2006-07-26 東邦化成株式会社 基板乾燥方法およびその装置
JP4364659B2 (ja) * 2004-01-29 2009-11-18 芝浦メカトロニクス株式会社 スピン処理装置及びスピン処理方法
JP4342343B2 (ja) * 2004-02-26 2009-10-14 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
US20070132976A1 (en) * 2005-03-31 2007-06-14 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
JP4627681B2 (ja) * 2005-04-20 2011-02-09 芝浦メカトロニクス株式会社 基板の処理装置及び処理方法
JP4734063B2 (ja) * 2005-08-30 2011-07-27 東京エレクトロン株式会社 基板洗浄装置及び基板洗浄方法。
CN101165854A (zh) * 2006-10-19 2008-04-23 大日本网目版制造株式会社 基板处理装置和基板处理方法
JP4774004B2 (ja) * 2007-03-30 2011-09-14 富士フイルム株式会社 ウエブ状被洗浄物の洗浄方法及び装置
JP5249915B2 (ja) * 2009-01-22 2013-07-31 東京エレクトロン株式会社 薬液処理装置および薬液処理方法
JP5156661B2 (ja) * 2009-02-12 2013-03-06 東京エレクトロン株式会社 液処理装置および液処理方法
JP2010219119A (ja) * 2009-03-13 2010-09-30 Shibaura Mechatronics Corp 基板処理装置および基板処理方法
JP3155351U (ja) * 2009-09-02 2009-11-12 東京エレクトロン株式会社 液処理装置
JP5440441B2 (ja) * 2010-08-12 2014-03-12 東京エレクトロン株式会社 液処理装置
JP5975563B2 (ja) * 2012-03-30 2016-08-23 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6046417B2 (ja) * 2012-08-17 2016-12-14 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、および基板処理方法
JP5951444B2 (ja) * 2012-10-25 2016-07-13 東京エレクトロン株式会社 基板処理装置および基板処理方法
JP6017262B2 (ja) * 2012-10-25 2016-10-26 東京エレクトロン株式会社 基板処理装置および基板処理方法
JP6319941B2 (ja) * 2013-03-15 2018-05-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および吐出ヘッド待機方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5960555A (en) * 1996-07-24 1999-10-05 Applied Materials, Inc. Method and apparatus for purging the back side of a substrate during chemical vapor processing
TW498396B (en) * 1999-07-27 2002-08-11 Shibaura Mechatronics Corp Spin processing apparatus
TW201137934A (en) * 2009-12-25 2011-11-01 Tokyo Electron Ltd Substrate processing method, storage medium and substrate processing apparatus

Also Published As

Publication number Publication date
JP6761081B2 (ja) 2020-09-23
JP2020074395A (ja) 2020-05-14
CN106716605B (zh) 2021-06-08
KR102404961B1 (ko) 2022-06-07
WO2016052642A1 (ja) 2016-04-07
KR102391753B1 (ko) 2022-04-28
US10607863B2 (en) 2020-03-31
KR20170063779A (ko) 2017-06-08
JP6804622B2 (ja) 2020-12-23
JP2019186565A (ja) 2019-10-24
CN113363187B (zh) 2024-03-22
US20200135505A1 (en) 2020-04-30
JPWO2016052642A1 (ja) 2017-07-13
CN106716605A (zh) 2017-05-24
TW201633392A (zh) 2016-09-16
CN113363187A (zh) 2021-09-07
JP6625058B2 (ja) 2019-12-25
US20200135504A1 (en) 2020-04-30
KR20220054469A (ko) 2022-05-02
US20170278729A1 (en) 2017-09-28

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