CN113363187B - 基板处理装置 - Google Patents

基板处理装置 Download PDF

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Publication number
CN113363187B
CN113363187B CN202110617130.XA CN202110617130A CN113363187B CN 113363187 B CN113363187 B CN 113363187B CN 202110617130 A CN202110617130 A CN 202110617130A CN 113363187 B CN113363187 B CN 113363187B
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China
Prior art keywords
nozzle
liquid
gas
substrate
substrate processing
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Active
Application number
CN202110617130.XA
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English (en)
Chinese (zh)
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CN113363187A (zh
Inventor
林航之介
大田垣崇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibaura Machine Co Ltd
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Shibaura Machine Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Shibaura Machine Co Ltd filed Critical Shibaura Machine Co Ltd
Priority to CN202110617130.XA priority Critical patent/CN113363187B/zh
Publication of CN113363187A publication Critical patent/CN113363187A/zh
Application granted granted Critical
Publication of CN113363187B publication Critical patent/CN113363187B/zh
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0402Apparatus for fluid treatment
    • H10P72/0406Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02Cleaning by the force of jets or sprays
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04Cleaning involving contact with liquid
    • B08B3/08Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04Cleaning involving contact with liquid
    • B08B3/10Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00Cleaning of wafers, substrates or parts of devices
    • H10P70/10Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0402Apparatus for fluid treatment
    • H10P72/0406Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0402Apparatus for fluid treatment
    • H10P72/0406Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0402Apparatus for fluid treatment
    • H10P72/0418Apparatus for fluid treatment for etching
    • H10P72/0422Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0431Apparatus for thermal treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0448Apparatus for applying a liquid, a resin, an ink or the like
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7608Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7626Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B2203/00Details of cleaning machines or methods involving the use or presence of liquid or steam
    • B08B2203/02Details of machines or methods for cleaning by the force of jets or sprays
    • B08B2203/0288Ultra or megasonic jets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN202110617130.XA 2014-09-30 2015-09-30 基板处理装置 Active CN113363187B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110617130.XA CN113363187B (zh) 2014-09-30 2015-09-30 基板处理装置

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2014201917 2014-09-30
JP2014-201917 2014-09-30
CN201580053001.5A CN106716605B (zh) 2014-09-30 2015-09-30 基板处理装置
PCT/JP2015/077790 WO2016052642A1 (ja) 2014-09-30 2015-09-30 基板処理装置
CN202110617130.XA CN113363187B (zh) 2014-09-30 2015-09-30 基板处理装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201580053001.5A Division CN106716605B (zh) 2014-09-30 2015-09-30 基板处理装置

Publications (2)

Publication Number Publication Date
CN113363187A CN113363187A (zh) 2021-09-07
CN113363187B true CN113363187B (zh) 2024-03-22

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CN202110617130.XA Active CN113363187B (zh) 2014-09-30 2015-09-30 基板处理装置
CN201580053001.5A Active CN106716605B (zh) 2014-09-30 2015-09-30 基板处理装置

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Country Status (6)

Country Link
US (3) US10607863B2 (https=)
JP (3) JP6625058B2 (https=)
KR (2) KR102391753B1 (https=)
CN (2) CN113363187B (https=)
TW (1) TWI585842B (https=)
WO (1) WO2016052642A1 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI622091B (zh) * 2015-06-18 2018-04-21 思可林集團股份有限公司 基板處理裝置
JP6779769B2 (ja) * 2016-12-07 2020-11-04 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP6804325B2 (ja) * 2017-02-09 2020-12-23 東京エレクトロン株式会社 液処理装置
CN109056085A (zh) * 2018-08-01 2018-12-21 南通纺织丝绸产业技术研究院 熔喷喷嘴结构
JP7221657B2 (ja) * 2018-11-12 2023-02-14 キオクシア株式会社 基板処理装置
CN113409699B (zh) * 2020-03-16 2024-11-15 重庆康佳光电科技有限公司 一种便于修复的led显示器及其修复方法
JP7634405B2 (ja) * 2021-03-30 2025-02-21 芝浦メカトロニクス株式会社 基板処理装置
JP7556328B2 (ja) * 2021-05-21 2024-09-26 株式会社Sumco 半導体ウェーハの洗浄装置、半導体ウェーハの洗浄方法およびシリコンウェーハの製造方法
JP7584361B2 (ja) * 2021-06-17 2024-11-15 株式会社荏原製作所 基板洗浄装置、基板処理装置
KR102535766B1 (ko) * 2021-08-24 2023-05-26 (주)디바이스이엔지 백 노즐 어셈블리를 포함하는 기판 처리장치
JP7794621B2 (ja) * 2021-12-02 2026-01-06 株式会社ディスコ 超音波水噴射装置
JP2023095206A (ja) * 2021-12-24 2023-07-06 芝浦メカトロニクス株式会社 基板処理装置
JP2024145228A (ja) * 2023-03-31 2024-10-15 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
EP4489064A1 (en) * 2023-07-03 2025-01-08 Unity Semiconductor Substrate dimension adapter
CN117133685A (zh) * 2023-08-18 2023-11-28 华海清科股份有限公司 一种晶圆清洗装置
CN118925962B (zh) * 2024-10-12 2025-02-28 浙江丽水中欣晶圆半导体科技有限公司 一种用于洗净机上并具有彻底清洁的喷头
CN119650464A (zh) * 2024-12-02 2025-03-18 西安奕斯伟材料科技股份有限公司 硅片清洗系统

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JP2001096238A (ja) * 1999-07-26 2001-04-10 Tokyo Electron Ltd 基板洗浄具,基板洗浄装置及び基板洗浄方法
JP2005217138A (ja) * 2004-01-29 2005-08-11 Shibaura Mechatronics Corp スピン処理装置及びスピン処理方法
JP2005243940A (ja) * 2004-02-26 2005-09-08 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
CN1853799A (zh) * 2005-04-20 2006-11-01 芝浦机械电子株式会社 基板的处理装置及处理方法
CN1923381A (zh) * 2005-08-30 2007-03-07 东京毅力科创株式会社 基板清洗装置和基板清洗方法
CN101165854A (zh) * 2006-10-19 2008-04-23 大日本网目版制造株式会社 基板处理装置和基板处理方法
JP3155351U (ja) * 2009-09-02 2009-11-12 東京エレクトロン株式会社 液処理装置
JP2010186859A (ja) * 2009-02-12 2010-08-26 Tokyo Electron Ltd 液処理装置および液処理方法
JP2010219119A (ja) * 2009-03-13 2010-09-30 Shibaura Mechatronics Corp 基板処理装置および基板処理方法
JP2013211377A (ja) * 2012-03-30 2013-10-10 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
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JP2001096238A (ja) * 1999-07-26 2001-04-10 Tokyo Electron Ltd 基板洗浄具,基板洗浄装置及び基板洗浄方法
JP2005217138A (ja) * 2004-01-29 2005-08-11 Shibaura Mechatronics Corp スピン処理装置及びスピン処理方法
JP2005243940A (ja) * 2004-02-26 2005-09-08 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
CN1853799A (zh) * 2005-04-20 2006-11-01 芝浦机械电子株式会社 基板的处理装置及处理方法
CN1923381A (zh) * 2005-08-30 2007-03-07 东京毅力科创株式会社 基板清洗装置和基板清洗方法
CN101165854A (zh) * 2006-10-19 2008-04-23 大日本网目版制造株式会社 基板处理装置和基板处理方法
JP2010186859A (ja) * 2009-02-12 2010-08-26 Tokyo Electron Ltd 液処理装置および液処理方法
JP2010219119A (ja) * 2009-03-13 2010-09-30 Shibaura Mechatronics Corp 基板処理装置および基板処理方法
JP3155351U (ja) * 2009-09-02 2009-11-12 東京エレクトロン株式会社 液処理装置
JP2013211377A (ja) * 2012-03-30 2013-10-10 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
CN104051301A (zh) * 2013-03-15 2014-09-17 大日本网屏制造株式会社 基板处理装置以及喷出头待机方法

Also Published As

Publication number Publication date
JP6761081B2 (ja) 2020-09-23
JP2020074395A (ja) 2020-05-14
CN106716605B (zh) 2021-06-08
KR102404961B1 (ko) 2022-06-07
WO2016052642A1 (ja) 2016-04-07
KR102391753B1 (ko) 2022-04-28
US10607863B2 (en) 2020-03-31
KR20170063779A (ko) 2017-06-08
JP6804622B2 (ja) 2020-12-23
JP2019186565A (ja) 2019-10-24
US20200135505A1 (en) 2020-04-30
JPWO2016052642A1 (ja) 2017-07-13
CN106716605A (zh) 2017-05-24
TW201633392A (zh) 2016-09-16
CN113363187A (zh) 2021-09-07
JP6625058B2 (ja) 2019-12-25
US20200135504A1 (en) 2020-04-30
KR20220054469A (ko) 2022-05-02
US20170278729A1 (en) 2017-09-28
TWI585842B (zh) 2017-06-01

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