TWI577533B - 具有高對比對準標記之模板 - Google Patents

具有高對比對準標記之模板 Download PDF

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Publication number
TWI577533B
TWI577533B TW100104120A TW100104120A TWI577533B TW I577533 B TWI577533 B TW I577533B TW 100104120 A TW100104120 A TW 100104120A TW 100104120 A TW100104120 A TW 100104120A TW I577533 B TWI577533 B TW I577533B
Authority
TW
Taiwan
Prior art keywords
layer
alignment
zone
topography
high contrast
Prior art date
Application number
TW100104120A
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English (en)
Chinese (zh)
Other versions
TW201134646A (en
Inventor
科斯塔Ｓ 西里尼迪斯
Original Assignee
分子壓模公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 分子壓模公司 filed Critical 分子壓模公司
Publication of TW201134646A publication Critical patent/TW201134646A/zh
Application granted granted Critical
Publication of TWI577533B publication Critical patent/TWI577533B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
    • H10P76/2041—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/887—Nanoimprint lithography, i.e. nanostamp

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
TW100104120A 2010-02-05 2011-02-08 具有高對比對準標記之模板 TWI577533B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US30189510P 2010-02-05 2010-02-05

Publications (2)

Publication Number Publication Date
TW201134646A TW201134646A (en) 2011-10-16
TWI577533B true TWI577533B (zh) 2017-04-11

Family

ID=44343828

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100104120A TWI577533B (zh) 2010-02-05 2011-02-08 具有高對比對準標記之模板

Country Status (5)

Country Link
US (1) US8961852B2 (enExample)
JP (1) JP5769734B2 (enExample)
KR (1) KR101772993B1 (enExample)
TW (1) TWI577533B (enExample)
WO (1) WO2011097514A2 (enExample)

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WO2012149029A2 (en) * 2011-04-25 2012-11-01 Molecular Imprints, Inc. Optically absorptive material for alignment marks
JP5831012B2 (ja) * 2011-07-27 2015-12-09 大日本印刷株式会社 インプリント用位置合わせマーク、該マークを備えたテンプレートおよびその製造方法
JP5651573B2 (ja) * 2011-11-18 2015-01-14 株式会社東芝 テンプレート処理方法
KR101856231B1 (ko) * 2011-12-19 2018-05-10 엘지이노텍 주식회사 나노패턴을 구비한 투명기판 및 그 제조방법
JPWO2013111631A1 (ja) * 2012-01-23 2015-05-11 旭硝子株式会社 ナノインプリントモールド用ブランク、ナノインプリントモールドおよびそれらの製造方法
JP2014011254A (ja) * 2012-06-28 2014-01-20 Dainippon Printing Co Ltd 位置合わせマーク、該マークを備えたテンプレート、および、該テンプレートの製造方法
JP2014049658A (ja) * 2012-08-31 2014-03-17 Toshiba Corp パターン形成方法及びテンプレート
JP6278383B2 (ja) * 2013-10-24 2018-02-14 国立研究開発法人産業技術総合研究所 高コントラスト位置合わせマークを備えたモールドの製造方法
JP6417728B2 (ja) * 2014-06-09 2018-11-07 大日本印刷株式会社 テンプレートの製造方法
JP6394112B2 (ja) * 2014-06-26 2018-09-26 大日本印刷株式会社 テンプレートの製造方法およびテンプレート
JP6394114B2 (ja) * 2014-06-27 2018-09-26 大日本印刷株式会社 テンプレートの製造方法およびテンプレート
JP6560490B2 (ja) * 2014-12-10 2019-08-14 キヤノン株式会社 顕微鏡システム
JP6965557B2 (ja) * 2016-04-28 2021-11-10 大日本印刷株式会社 インプリント用テンプレート及びインプリント用テンプレートの製造方法
US11131922B2 (en) 2016-06-06 2021-09-28 Canon Kabushiki Kaisha Imprint lithography template, system, and method of imprinting
KR102547143B1 (ko) * 2016-09-27 2023-06-23 일루미나, 인코포레이티드 임프린팅된 기판
JP6308281B2 (ja) * 2016-10-21 2018-04-11 大日本印刷株式会社 テンプレートの製造方法
JP6692311B2 (ja) * 2017-03-14 2020-05-13 キオクシア株式会社 テンプレート
CN110892324B (zh) * 2017-07-21 2024-04-02 卡尔蔡司Smt有限责任公司 用于处理光刻掩模的多余材料的方法与设备
US11126083B2 (en) * 2018-01-24 2021-09-21 Canon Kabushiki Kaisha Superstrate and a method of using the same
JP2018133591A (ja) * 2018-05-18 2018-08-23 大日本印刷株式会社 テンプレートの製造方法
JP6607293B2 (ja) * 2018-08-28 2019-11-20 大日本印刷株式会社 テンプレート
JP2020035924A (ja) * 2018-08-30 2020-03-05 キオクシア株式会社 原版
JP2019009469A (ja) * 2018-10-09 2019-01-17 大日本印刷株式会社 部材
JP6642689B2 (ja) * 2018-12-04 2020-02-12 大日本印刷株式会社 インプリント用テンプレート及びインプリント方法
JP6835167B2 (ja) * 2019-08-28 2021-02-24 大日本印刷株式会社 テンプレートの製造方法
JP7336373B2 (ja) * 2019-12-10 2023-08-31 キヤノン株式会社 型を製造する方法、型、インプリント方法、インプリント装置及び物品の製造方法
JP2021150481A (ja) * 2020-03-19 2021-09-27 キオクシア株式会社 テンプレート、テンプレートの製造方法、および半導体装置の製造方法
JP7374826B2 (ja) * 2020-03-19 2023-11-07 キオクシア株式会社 テンプレートの製造方法
KR102379451B1 (ko) * 2021-04-27 2022-03-28 창원대학교 산학협력단 대면적 패턴 제작용 몰드, 이의 제조 방법 및 이를 이용한 패턴 성형 방법
US12195382B2 (en) 2021-12-01 2025-01-14 Canon Kabushiki Kaisha Superstrate and a method of using the same

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JP2007103915A (ja) * 2005-09-06 2007-04-19 Canon Inc モールド、インプリント方法、及びチップの製造方法

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Also Published As

Publication number Publication date
JP2013519236A (ja) 2013-05-23
TW201134646A (en) 2011-10-16
JP5769734B2 (ja) 2015-08-26
US8961852B2 (en) 2015-02-24
US20110192302A1 (en) 2011-08-11
KR20120125473A (ko) 2012-11-15
WO2011097514A2 (en) 2011-08-11
WO2011097514A3 (en) 2011-10-13
KR101772993B1 (ko) 2017-08-31

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