TWI577533B - 具有高對比對準標記之模板 - Google Patents

具有高對比對準標記之模板 Download PDF

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Publication number
TWI577533B
TWI577533B TW100104120A TW100104120A TWI577533B TW I577533 B TWI577533 B TW I577533B TW 100104120 A TW100104120 A TW 100104120A TW 100104120 A TW100104120 A TW 100104120A TW I577533 B TWI577533 B TW I577533B
Authority
TW
Taiwan
Prior art keywords
layer
alignment
zone
topography
high contrast
Prior art date
Application number
TW100104120A
Other languages
English (en)
Chinese (zh)
Other versions
TW201134646A (en
Inventor
科斯塔Ｓ 西里尼迪斯
Original Assignee
分子壓模公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 分子壓模公司 filed Critical 分子壓模公司
Publication of TW201134646A publication Critical patent/TW201134646A/zh
Application granted granted Critical
Publication of TWI577533B publication Critical patent/TWI577533B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/887—Nanoimprint lithography, i.e. nanostamp

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
TW100104120A 2010-02-05 2011-02-08 具有高對比對準標記之模板 TWI577533B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US30189510P 2010-02-05 2010-02-05

Publications (2)

Publication Number Publication Date
TW201134646A TW201134646A (en) 2011-10-16
TWI577533B true TWI577533B (zh) 2017-04-11

Family

ID=44343828

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100104120A TWI577533B (zh) 2010-02-05 2011-02-08 具有高對比對準標記之模板

Country Status (5)

Country Link
US (1) US8961852B2 (enExample)
JP (1) JP5769734B2 (enExample)
KR (1) KR101772993B1 (enExample)
TW (1) TWI577533B (enExample)
WO (1) WO2011097514A2 (enExample)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101861644B1 (ko) 2010-09-24 2018-05-28 캐논 나노테크놀로지즈 인코퍼레이티드 다단계 임프린팅을 통한 고콘트라스트 정렬 마크
JP6306501B2 (ja) * 2011-04-25 2018-04-04 キヤノン ナノテクノロジーズ，インコーポレーテッド テンプレートおよびテンプレートを基板と位置合わせするための方法
JP5831012B2 (ja) * 2011-07-27 2015-12-09 大日本印刷株式会社 インプリント用位置合わせマーク、該マークを備えたテンプレートおよびその製造方法
JP5651573B2 (ja) * 2011-11-18 2015-01-14 株式会社東芝 テンプレート処理方法
KR101856231B1 (ko) 2011-12-19 2018-05-10 엘지이노텍 주식회사 나노패턴을 구비한 투명기판 및 그 제조방법
KR20140117429A (ko) * 2012-01-23 2014-10-07 아사히 가라스 가부시키가이샤 나노임프린트 몰드용 블랭크, 나노임프린트 몰드 및 그들의 제조 방법
JP2014011254A (ja) * 2012-06-28 2014-01-20 Dainippon Printing Co Ltd 位置合わせマーク、該マークを備えたテンプレート、および、該テンプレートの製造方法
JP2014049658A (ja) * 2012-08-31 2014-03-17 Toshiba Corp パターン形成方法及びテンプレート
JP6278383B2 (ja) * 2013-10-24 2018-02-14 国立研究開発法人産業技術総合研究所 高コントラスト位置合わせマークを備えたモールドの製造方法
JP6417728B2 (ja) * 2014-06-09 2018-11-07 大日本印刷株式会社 テンプレートの製造方法
JP6394112B2 (ja) * 2014-06-26 2018-09-26 大日本印刷株式会社 テンプレートの製造方法およびテンプレート
JP6394114B2 (ja) * 2014-06-27 2018-09-26 大日本印刷株式会社 テンプレートの製造方法およびテンプレート
JP6560490B2 (ja) * 2014-12-10 2019-08-14 キヤノン株式会社 顕微鏡システム
JP6965557B2 (ja) * 2016-04-28 2021-11-10 大日本印刷株式会社 インプリント用テンプレート及びインプリント用テンプレートの製造方法
US11131922B2 (en) 2016-06-06 2021-09-28 Canon Kabushiki Kaisha Imprint lithography template, system, and method of imprinting
EP3519894B1 (en) * 2016-09-27 2024-04-17 Illumina, Inc. Imprinted substrates
JP6308281B2 (ja) * 2016-10-21 2018-04-11 大日本印刷株式会社 テンプレートの製造方法
JP6692311B2 (ja) * 2017-03-14 2020-05-13 キオクシア株式会社 テンプレート
KR102757231B1 (ko) * 2017-07-21 2025-01-21 칼 짜이스 에스엠티 게엠베하 포토리소그래피 마스크의 과잉 재료의 폐기를 위한 방법 및 장치
US11126083B2 (en) * 2018-01-24 2021-09-21 Canon Kabushiki Kaisha Superstrate and a method of using the same
JP2018133591A (ja) * 2018-05-18 2018-08-23 大日本印刷株式会社 テンプレートの製造方法
JP6607293B2 (ja) * 2018-08-28 2019-11-20 大日本印刷株式会社 テンプレート
JP2020035924A (ja) * 2018-08-30 2020-03-05 キオクシア株式会社 原版
JP2019009469A (ja) * 2018-10-09 2019-01-17 大日本印刷株式会社 部材
JP6642689B2 (ja) * 2018-12-04 2020-02-12 大日本印刷株式会社 インプリント用テンプレート及びインプリント方法
JP6835167B2 (ja) * 2019-08-28 2021-02-24 大日本印刷株式会社 テンプレートの製造方法
JP7336373B2 (ja) * 2019-12-10 2023-08-31 キヤノン株式会社 型を製造する方法、型、インプリント方法、インプリント装置及び物品の製造方法
JP2021150481A (ja) * 2020-03-19 2021-09-27 キオクシア株式会社 テンプレート、テンプレートの製造方法、および半導体装置の製造方法
JP7374826B2 (ja) * 2020-03-19 2023-11-07 キオクシア株式会社 テンプレートの製造方法
KR102379451B1 (ko) * 2021-04-27 2022-03-28 창원대학교 산학협력단 대면적 패턴 제작용 몰드, 이의 제조 방법 및 이를 이용한 패턴 성형 방법
US12195382B2 (en) 2021-12-01 2025-01-14 Canon Kabushiki Kaisha Superstrate and a method of using the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005040932A2 (en) * 2003-10-24 2005-05-06 Obducat Ab Apparatus and method for aligning surfaces
JP2007103915A (ja) * 2005-09-06 2007-04-19 Canon Inc モールド、インプリント方法、及びチップの製造方法

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60111425A (ja) 1983-11-22 1985-06-17 Toshiba Corp 位置合わせ用マ−クの形成方法
US5477058A (en) * 1994-11-09 1995-12-19 Kabushiki Kaisha Toshiba Attenuated phase-shifting mask with opaque reticle alignment marks
US6873087B1 (en) 1999-10-29 2005-03-29 Board Of Regents, The University Of Texas System High precision orientation alignment and gap control stages for imprint lithography processes
EP2264524A3 (en) * 2000-07-16 2011-11-30 The Board of Regents of The University of Texas System High-resolution overlay alignement methods and systems for imprint lithography
US6696220B2 (en) * 2000-10-12 2004-02-24 Board Of Regents, The University Of Texas System Template for room temperature, low pressure micro-and nano-imprint lithography
US20050064344A1 (en) * 2003-09-18 2005-03-24 University Of Texas System Board Of Regents Imprint lithography templates having alignment marks
DE10307518B4 (de) * 2002-02-22 2011-04-14 Hoya Corp. Halbtonphasenschiebermaskenrohling, Halbtonphasenschiebermaske und Verfahren zu deren Herstellung
US6932934B2 (en) * 2002-07-11 2005-08-23 Molecular Imprints, Inc. Formation of discontinuous films during an imprint lithography process
US7077992B2 (en) 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US6916584B2 (en) * 2002-08-01 2005-07-12 Molecular Imprints, Inc. Alignment methods for imprint lithography
US7027156B2 (en) * 2002-08-01 2006-04-11 Molecular Imprints, Inc. Scatterometry alignment for imprint lithography
US7070405B2 (en) 2002-08-01 2006-07-04 Molecular Imprints, Inc. Alignment systems for imprint lithography
US6936194B2 (en) * 2002-09-05 2005-08-30 Molecular Imprints, Inc. Functional patterning material for imprint lithography processes
US20040065252A1 (en) 2002-10-04 2004-04-08 Sreenivasan Sidlgata V. Method of forming a layer on a substrate to facilitate fabrication of metrology standards
US8349241B2 (en) 2002-10-04 2013-01-08 Molecular Imprints, Inc. Method to arrange features on a substrate to replicate features having minimal dimensional variability
US7179396B2 (en) * 2003-03-25 2007-02-20 Molecular Imprints, Inc. Positive tone bi-layer imprint lithography method
US7396475B2 (en) 2003-04-25 2008-07-08 Molecular Imprints, Inc. Method of forming stepped structures employing imprint lithography
US7157036B2 (en) * 2003-06-17 2007-01-02 Molecular Imprints, Inc Method to reduce adhesion between a conformable region and a pattern of a mold
US7136150B2 (en) 2003-09-25 2006-11-14 Molecular Imprints, Inc. Imprint lithography template having opaque alignment marks
US7130049B2 (en) * 2003-12-24 2006-10-31 Asml Netherlands B.V. Method of measurement, method for providing alignment marks, and device manufacturing method
US8076386B2 (en) * 2004-02-23 2011-12-13 Molecular Imprints, Inc. Materials for imprint lithography
EP1774407B1 (en) * 2004-06-03 2017-08-09 Board of Regents, The University of Texas System System and method for improvement of alignment and overlay for microlithography
US7785526B2 (en) * 2004-07-20 2010-08-31 Molecular Imprints, Inc. Imprint alignment method, system, and template
US7309225B2 (en) 2004-08-13 2007-12-18 Molecular Imprints, Inc. Moat system for an imprint lithography template
US7630067B2 (en) * 2004-11-30 2009-12-08 Molecular Imprints, Inc. Interferometric analysis method for the manufacture of nano-scale devices
JP5306989B2 (ja) 2006-04-03 2013-10-02 モレキュラー・インプリンツ・インコーポレーテッド 複数のフィールド及びアライメント・マークを有する基板を同時にパターニングする方法
US8012395B2 (en) * 2006-04-18 2011-09-06 Molecular Imprints, Inc. Template having alignment marks formed of contrast material
US7547398B2 (en) * 2006-04-18 2009-06-16 Molecular Imprints, Inc. Self-aligned process for fabricating imprint templates containing variously etched features
US7780431B2 (en) * 2006-09-14 2010-08-24 Hewlett-Packard Development Company, L.P. Nanoimprint molds and methods of forming the same
US7837907B2 (en) * 2007-07-20 2010-11-23 Molecular Imprints, Inc. Alignment system and method for a substrate in a nano-imprint process
US20090148032A1 (en) * 2007-12-05 2009-06-11 Molecular Imprints, Inc. Alignment Using Moire Patterns
JP2009298041A (ja) * 2008-06-13 2009-12-24 Toshiba Corp テンプレート及びパターン形成方法
US20100092599A1 (en) 2008-10-10 2010-04-15 Molecular Imprints, Inc. Complementary Alignment Marks for Imprint Lithography
WO2011072897A1 (en) * 2009-12-18 2011-06-23 Asml Netherlands B.V. Imprint lithography

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005040932A2 (en) * 2003-10-24 2005-05-06 Obducat Ab Apparatus and method for aligning surfaces
JP2007103915A (ja) * 2005-09-06 2007-04-19 Canon Inc モールド、インプリント方法、及びチップの製造方法

Also Published As

Publication number Publication date
KR20120125473A (ko) 2012-11-15
US8961852B2 (en) 2015-02-24
US20110192302A1 (en) 2011-08-11
JP5769734B2 (ja) 2015-08-26
KR101772993B1 (ko) 2017-08-31
WO2011097514A2 (en) 2011-08-11
WO2011097514A3 (en) 2011-10-13
TW201134646A (en) 2011-10-16
JP2013519236A (ja) 2013-05-23

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