TW201014700A - Template having alignment marks formed of contrast material - Google Patents

Abstract

Imprint lithography substrates may include alignment marks formed of high contrast material. Exemplary methods for forming alignment marks having high contrast material are described.

Description

201014700 VI. Description of the invention: [Technical field of invention] Cross-reference related application This application claims to be filed on October 1, 2008, in accordance with Article ii9(e)(1) of the US Patent Law (35 usc). The US Provisional Application No. 61/104, 3G0 case of the case, the case in this case is considered as a reference. • The present invention relates to templates having alignment marks formed from comparative materials. [Previous Technology 4] Background of the Invention Nanofabrication involves the fabrication of a ^ minimal structure having the characteristics of a nanometer or less. One application that nanofabrication has had a considerable impact is the processing of the film in the " circuit. The semiconductor processing industry continues to strive for higher manufacturing yields while increasing the number of circuits per unit area on the substrate. Therefore, D, metrics have become increasingly important. Nanofabrication provides better process control while allowing for a continuous reduction in the minimum feature size of the resulting structure. Other areas of development in which nanofabrication has been used include biotechnology, optical technology, mechanical systems, and the like. An exemplary nanofabrication technique in the use of $. is commonly referred to as f-lithography. Exemplary embossing lithography processes are described in detail in a number of publications, such as U.S. Patent Publication No. 2004/0065976, U.S. Patent Publication No. 2004/0065252, and U.S. Patent No. 6,936,! They are incorporated herein by reference. An imprint micro 201014700 shirt technique disclosed in U.S. Patent Publications and Patents, which discloses forming a embossed pattern in an polymerizable layer and transferring a pattern corresponding to the embossed pattern onto a lower substrate. . The substrate can be coupled to a mobile platform to achieve a desired positioning for assisting the patterning process. The patterning process uses a template spatially spaced from the substrate and a formable liquid applied between the template and the substrate. The formable liquid is cured to form a rigid layer having a pattern that conforms to the shape of the stencil surface contacting the formable liquid. After curing, the stencil is separated from the rigid layer whereby the stencil is spaced from the substrate. The substrate and the cured layer are then subjected to an additional process ' to transfer a relief pattern image corresponding to the pattern in the cured layer onto the substrate. [^^ 明明] According to an embodiment of the present invention, a method for patterning an imprinted nanometer ray substrate is specifically proposed, comprising: a plurality of recesses and a plurality of protrusions η Patterning a first portion; patterning a second portion of the substrate with at least one alignment mark, at least a portion of the alignment mark being formed of a high contrast material; wherein the first portion of the substrate and The second portion of the substrate is patterned in the same step. BRIEF DESCRIPTION OF THE DRAWINGS In order to provide a more detailed understanding of the present invention, a description of embodiments of the invention is provided with reference to the accompanying drawings. It is to be understood, however, that the appended claims BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a simplified side elevational view of one embodiment of a lithography system in accordance with the present invention. Fig. 2 is a view showing a simplified view of a substrate having a patterned layer on the first embodiment shown in Fig. 1. 3A and 33 are embodiments. An exemplary fourth drawing of a template that does not have an alignment mark indicates an anamorphic view of the template overlapped with the substrate in the first smear _ 帛 帛 , , , , , , , , , - - - quasi. The misalignment of one (four) elevation of the template of the template overlapped with the substrate is requested.

Above and FIG. 6 is a top-down view of the template overlapping the substrate illustrated in FIG. 1, depicting misalignment along two lateral directions. An example of a template having an alignment mark visible in the alignment process is shown in Fig. 7-7. - "0", % does not have an embodiment formed by an irregular template of alignment marks visible to the process towel. The ninth and second figures illustrate an exemplary embodiment of a template having alignment marks visible during an alignment process, the alignment marks having a protective layer. Another embodiment of an exemplary template formation is illustrated in Figures 10-10. Figures 11-11, 12A-12D, and 13A-13D illustrate an exemplary replication process for forming a replica template with high contrast alignment marks. Figure 14 illustrates a top down view of an alignment mark. Figure 15 is an enlarged view of an embodiment of an alignment mark. Figure 15 is a magnified view of another embodiment of an alignment mark that is segmented in a line of spaced patterns. Figure 15C is an enlarged view of another embodiment of an alignment mark that is segmented in a square grid. Figure 16 illustrates the alignment of a lock and key arrangement in an embossed range. C implementation:! DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT Referring to the drawings, particularly FIG. 1, a lithography system 1 for forming a relief pattern on a substrate 12 is illustrated. The substrate 12 can be attached to the substrate chuck 14. As illustrated, the substrate chuck 14 is a vacuum chuck. However, substrate chuck 14 can include, but is not limited to, any chucks of vacuum, pin type, channel type, electromagnetic, and the like. An exemplary chuck is described in U.S. Patent No. 6,873,087, which is incorporated herein by reference. Substrate 12 and substrate chuck 14 may be further supported by platform 16. The platform 16 can provide movement along the X-axis, the y-axis, and the 2-axis. The platform 16, substrate 12 and substrate chuck 14 can also be placed on a pedestal (not shown). Space-separated from the substrate 12 is a template 18. The template 18 generally includes a platform 2 that extends toward the substrate 12 and has a patterned surface 22 on the platform 20. Further, the platform 20 can be referred to as a mold 2〇. The template 18 and/or the mold 20 may be comprised of, but not limited to, molten stone, quartz, shoal, organic polymer, sulphur oxide polymer, borosilicate glass, fluorocarbon polymer, metal, hardened sapphire, and the like. Such materials are formed. As illustrated, the patterned surface 22 includes features defined by a plurality of spaced apart recesses 24 and/or protrusions 26, although embodiments of the invention are not limited to these configurations. The patterned surface 22 can define any original pattern that forms the basis of a pattern to be formed on the substrate 12. The 201014700 template 18 can be connected to the chuck 28. Chuck 28 can be assembled, but not limited to, vacuum, pin type, grooved, electromagnetic, etc., to other similar chuck types. An exemplary chuck is further described in U.S. Patent No. 6,873,087, the disclosure of which is incorporated herein by reference. Additionally, the chuck 28 can be coupled to the stamping head 30 whereby the chuck 28 and/or the stamping head 30 can be assembled to assist in the movement of the template 18. System 10 can further include a fluid dispensing system 32. Fluid dispensing system 32 can be used to deposit polymerizable material 34 on substrate 12. The polymerizable material 34 can be used, such as by drop dispensing, spin coating, dip coating, chemical vapor deposition (CVD), physical vapor deposition (PVD), thin film deposition, thick film deposition, and the like. On the substrate 12. The polymerizable material 34 may be disposed on the substrate 12 before and/or after a desired volume of design considerations between the mold 22 and the substrate 12. The polymerizable material 34 can comprise a monomer mixture as described in U.S. Patent No. 7,157,036, and U.S. Patent Publication No. 2005/0187339, the disclosure of which is incorporated herein by reference. Referring to Figures 1 and 2, system 10 can further include an energy source 38 coupled to direct energy 40 along path 42. Imprint head 30 and platform 16 can be mounted to overlap template 18 and substrate 12 with path 42. The system 1 can be adjusted by a processor 54 that communicates with the platform 16, the imprint head 30, the fluid dispensing system 32, and/or the energy source 38, and can be stored in a computer readable program in the memory 56. On the operation. One or both of the imprint head 30, the platform 16, or both, can vary the distance between the platform 2's and the substrate 12 to define a 201014700 required volume therebetween that is filled with the polymerizable material 34. For example, the stamping head 3 can apply a force to the template 18 such that the mold 20 is in contact with the polymerizable material 34. After the desired volume is filled with the polymerizable material 34, the energy source 38 produces energy 40, such as broadband ultraviolet radiation, causing the polymerizable material 34 to cure and/or crosslink to conform to the shape of one of the surfaces 44 of the substrate 12 and to pattern the surface 22, A patterned layer 46 is defined on the substrate 12. The pattern layer 46 can include a residual layer 48 and a plurality of features shown as protrusions 50 and recesses 52, wherein the protrusions 50 have a thickness. And the residual layer has a thickness t2. The above system and process can be further applied to the case of U.S. Patent No. 6,932,934, U.S. Patent Publication No. 2004/0124566, U.S. Patent Publication No. 2004/0188381, and U.S. Patent Publication No. 2004/0211754. In the embossing lithography process and system mentioned in the above, these cases are incorporated into the case for reference. One method of placing the polymerizable material 34 between the template 18 and the substrate 12 can be by depositing a plurality of droplets of the polymerizable material 34 onto the surface of the substrate 12. Thereafter, the polymerizable material 34 can be simultaneously contacted with the substrate 12 by the template 18, and the polymerizable material 34 is spread over the surface of the substrate 12. In this process, the positioning of the substrate 18 to the substrate 12 can be a factor. Referring to Figure 3, template 18 and/or substrate 12 may include alignment marks 60 to provide a suitable orientation. Alignment marks 60 may be formed on the patterned surface 22 of the template 8 and/or substrate 12 or etched into the template 18 and/or substrate 12 as shown in FIG. 3B. Referring to Figure 4, it is assumed that the required alignment between the template 18 and the substrate 12 occurs after the alignment marks 60 of the template 18 overlap the alignment marks 90 of the substrate 12. For example, in Figure 4, the alignment of the requirement between the template 18 and the substrate π is still not occurring, as indicated by the two marks offset by a distance 。. In addition, although the offset Ο is shown as a linear offset in one direction, it should be understood that the offset may be a linear offset in two directions as shown by 〇Α〇2_ in Fig. 5. Additionally or alternatively to the linear offset of one or both of the above directions, the offset between the template 18 and the substrate ^ can also consist of an angular offset, which is angled in Figure 6. Multiple alignment marks can also have other combinations of offsets (e.g., magnification, skew, keystone distortion, etc.). The material comprising the template 18 can have the same refractive index as % of the material. In addition, the indices of refraction can be found in the laps of the ray. The alignment marks 6A of the template 18 have the same index of refraction as the polymerizable material 34 so that the alignment marks 6 of the template 18 are readable by the polymerizable material _times are not visible during alignment. The invisibility of the alignment marks 6 of the template 18 may interfere with the alignment of the template and the substrate 12 (10) into the patterned polymerizable material 34. The isolation of the alignment marks 6() of the template 18 and/or the substrate 12 from the polymerizable material can facilitate visibility between the solutions. For example, a rim groove (not shown) may sing the human template 18 during the filament forming process to isolate the polymerizable material 34 from the alignment mark 6〇. The rims, channels, and other similar features are further described in U.S. Serial No. 1/917,761, U.S. Patent No. 7,077,992, U.S. Patent No. 7, 〇41,6〇4, and U.S. Patent No. 6,916,584. In U.S. Patent No. 7,252,777, the disclosure of which is hereby incorporated herein by reference in its entirety by reference to the extent of the s s s s s s s s s s s s s s s s s s s s s s s s s s The minimum required space required for these features is generally large. Instead of isolating the alignment mark 6A from the polymerizable material 34, the alignment mark 6〇 9 201014700 can be formed to provide visibility during the alignment process. For simplicity of description, the formation and use of template alignment marks are described below, however, those of ordinary skill in the art will recognize that features having features and formation as described herein can be provided on substrate 12. The seventh diagram shows a side view of an embodiment of a template 丨 8 a including alignment marks 6 〇 a visible during the alignment process. In general, the alignment mark 60a can be composed of a high contrast material. High contrast materials may include, but are not limited to, buttons, nitride buttons, tungsten, tantalum carbide, amorphous germanium,

Chromium nitride I la, Shi Xihua pin, titanium, vaporized titanium, combinations of these materials and/or the like. The two contrast materials may have a filamentity suitable for use in the alignment mark 6 when provided to a thickness less than the thickness (e.g., less than 25 nm) of the @案化层48 shown in Fig. 2. For example, the alignment of the god-leveling material may cause at least a portion of the alignment mark to be present during the formation of the patterned layer servant (4) 34, and thus the solution 60a may not limit the proximity of the substrate 12. The surface of the plate 18 is changed.

Set == with or without " or other similar _ set for the light stroke period can be seen. Alignment target (10) Figure: Show reduction (4), such as the 7C_ shown on the filial surface 22a of the mold, or in the pattern combination. On the money and on the inlay mold 20, you can see the various templates that you can see on the page. For example, in Lakes and Figure 7B, the Dong-Part 6U can be formed from a high contrast village, and the portion 63a is substantially free of high contrast material. The first part is indispensable for 2010 10 201014700 60a, or as shown in Figures 7 and 7B, the first part may be partial. For example, as shown in Figure 7A, the first portion having a high contrast material may be localized on the patterned surface 22a. Alternatively, as shown in Fig. 7E, high contrast (iv) can be used to substantially coat the alignment t-shirt. As shown in Figures 7B and 7C, the 'high contrast material' can be applied to the entire template 18b without hiding from the alignment mark. For example, high contrast materials can

The patterned surface 48a of the loose sheet 18b is coated. Alternatively, the high contrast material can be integrated into the template 18b. ... 8A-8K plots the simplified side (4) of the non-feature formation of the template (10) without high contrast alignment marks. For example, the template 丨崎 is formed by a multi-layer substrate 64 and includes a platform plus with a high contrast alignment mark _. For the shape: Pair: The contrast material of the mark 60a is compatible with the right second pass used in the current industrial range' and therefore, the comparative material can be cleaned after imprinting without being known. Alternatively, the alignment mark 6a can be formed in the same manner as the feature 2 such as '24b(d) - a process step towel. The formation in the same process step reduces overlap alignment errors. The slanting t is continued from the eighth embodiment. The multilayer substrate 64 can generally include a substrate layer 7A, a second layer 72, a hard mask layer 74, and a resist layer 76. The substrate layer 70, (4) Å, 1, organic polymer, and money-fired polymerization are formed. , Fluorine & Polymer, Metal, Hardened Sapphire, etc. The hard mask layer 74 may be formed of a material including but fossil, amorphous dream, chromium, nitrided or the like. Not limited to groups, nitrided groups, tantalum, carbon, pins, molybdenum molybdenum, titanium, titanium nitride, and / 11 201014700 Comparative material layer 72 may include, but is not limited to, tantalum, tantalum nitride, tungsten, carbon carbide, non- A combination of a spar, a cerium, a nitriding, a cerium, a titanium, a titanium nitride, a combination of such materials, and/or the like. It should be noted that the contrast material layer 72 can have a double lining, i.e., the high contrast material 72 can provide a high contrast material that aligns the alignment marks during patterning of the substrate 12, and can also be used in place of or in place of the hard mask layer 74. Layer 74 acts as a hard cover. Referring to Figure 8B, the contrast material layer 72, the hard mask layer 74, and the anti-surname layer 76 can be patterned to include basic features (e.g., recess 24a and bumps 26&) and/or alignment marks 60a. The multilayer substrate 64 can be further substantially removed from the resist layer and recoated by the resist layer 78 as shown in FIG. 8C. For example, the resist layer can be removed using techniques including, but not limited to, resist strip and solvent wetting, oxygen ashing, etching, stinking water, stinky water, and the like. It should be noted that the multilayer substrate 64 may be coated with a resist layer 78 without the need to complete the removal of the resist layer 76. Referring to FIG. 8D, because the resist layer 78 substantially blocks (eg, masks) the alignment mark 6〇a process while the remaining features 24a and 26a are unblocked (eg, unmasked), the features 24a and 26a of the multilayer substrate 64 are At least a portion can be exposed. It should be noted that the steps shown in Figures 8C and 8D are optional. For example, the steps shown in Figures 8C and 8D can be used to limit the depth of the alignment mark 60a. The features 24a and 26a of the multilayer substrate 64 can be further etched into the substrate 70 as shown in Fig. 8E. When features 24a and 26a are further etched into substrate 7A, resist layer 78 can substantially prevent the etch process from changing alignment marks 6A. As shown in FIG. 8F, the multilayer substrate 64 can be further substantially removed from the contrast material layer 72 and the hard mask layer 74. The contrast material layer 72 and/or the hard mask layer 74 12 201014700 can be removed using techniques including, but not limited to, wet etching, RIE ' ERIE, ICP, plasma etching, drying, etc., etching, and the like. For example, a chromium-based facing material can be removed by using a chromium etchant, such as, for example, (78 and Cr9S are removed by high-selective wet etching. Chromium-based films can also be used with gas and gas. The 2-based plasma treatment is removed. The removal process can selectively remove the contrast material layer 72 and/or the hard mask layer 74 with minimal effects on features 24a and/or 26a. Additionally, because of the multilayer substrate 64 The resist layer 72 and/or the hard mask layer % are removed, and the resist layer 78 can substantially prevent the removal process from changing the alignment mark 6〇a. In the contrast material layer 72 and/or the hard mask layer 74 The protection provided by the resist layer 78 during removal may provide the alignment mark 60a to be independent of the depth of the features 24a and 26a. For example, the alignment mark 6A may have a depth Di while the protrusion 26a may have a depth D2, Where D#D2. It should be noted that the steps shown in the figures may be optional because the contrast material layer 72 and/or the hard mask layer 74 may still be above features 24 and 26. As shown in Figure 8G' The multilayer substrate μ can be further substantially removed from the resist layer 78. In addition, a hard mask layer covered by the resist layer 78 The alignment mark 6A can be substantially removed to expose at least a portion. As shown in Figures 8H-8K, the additional process of the multilayer substrate 64 can provide sidewalls 8A for aiding in the polymerization as described above. And/or during the cross-linking process (see generally, the polymerizable material 34 between the template 18 and the substrate 12 is confined to a desired volume. For example, the 'side wall can be advanced in the US Patent No. Serial No. 11/ The method described in 762, 278 is hereby incorporated by reference herein in its entirety by reference in its entirety herein in its entirety in its entirety in the the the the the the the the the the the the the Patterning 13 201014700 is formed before and/or after the standard (4) patterning is formed. For example, 'the sidewalls may be formed before the de-reading_patterning, so that the sidewalls 80a may be formed of a single-substrate' and a multilayer In contrast, this can simplify the structure. The 8H-8K diagram shows an exemplary process in which the sidewalls 8 can be formed in the multilayer substrate 04 after the patterning of the alignment marks 60a. The multilayer substrate can be as shown in FIG. Not to - anti-rice layer 82 and a hard The cover layer is coated. The partial resist layer 82 and the hard mask layer 84 are removed such that the alignment marks and features % and 26a are still substantially formed by the resist layer 82 and the hard mask layer as shown in FIG. The upper cover 8 can be formed in the step shown in Fig. 8-8-8. Referring to Figures 9A and 9B, a protective layer 87 can be used to form visible during the alignment process. The alignment mark 6〇b. The protective layer 87 may be confined in the alignment mark 6b 60b, or as shown in FIGS. 9A and 9B, the protective layer 87 may be coated with the alignment mark 60b. For example, at the 9A In the figure, a first portion 61b of the alignment mark 6〇b may comprise a high contrast material, a second portion 63b of the alignment mark 6〇b may be substantially free of high contrast material, and the protective layer 87 may be coated. The first portion 61b and the second portion 63b of the mark 6〇b are aligned. ® 10A-10H illustrate a simplified side view of another exemplary structure for forming a template 18b from a multilayer substrate 86b having a protective layer 87 (e.g., an oxide layer; The resulting template 18b (see Fig. 10H) formed by the multilayer substrate 86b includes a stage 20b having a high contrast alignment mark 60b. Additionally, the formation of alignment marks 60b can be in the same process step as the formation of features 24b and/or 26b. The formation in this same process step can reduce overlap alignment errors. As shown in FIG. 10A, the multilayer substrate 86b can include a substrate layer 70b, a 14 201014700 hard mask layer 74b, and an anti-surname layer 76b, and can be patterned to include features 24b and 26b and/or alignment marks. _. The multi-panel % can be further substantially removed from the resist layer 76b as shown in the figure, and the protective layer 87 (e.g., oxide layer) is re-coated as shown in Fig. 1c. A second resist layer 8 can then be placed to substantially cover the alignment marks 60b as shown in Figure 1D. The second resist layer 88b can be selectively etched such that a portion of the second resist layer 88b protects the alignment mark 60b as shown in Fig. 10E. Features 241) and 261) can be further etched into substrate 70 as shown in Figure 10F. As shown in Fig. 10G, the hard mask layer 74b can be removed. For example, the hard mask layer 74b can be removed using techniques including, but not limited to, dry isotropic etching (e.g., hafnium dioxide gas), wet etching (e.g., KOH), and the like. As shown in FIG. 10H, the multilayer substrate 86 can be substantially removed from the resist layer 88 exposing the alignment marks 60b to provide a template 18b having alignment marks 60b, wherein at least a portion of the alignment marks 60 can be made of a high contrast material. form. The additional process of template 18b can provide sidewalls for helping to substantially limit the polymerizable material 34 between template 18b and substrate 12 to the desired volume during polymerization and/or crosslinking as described above (see Figure 1). . For example, the side walls can be formed by the method described in U.S. Patent Application Serial No. U/762,278, which is incorporated herein by reference. It should be understood that the sidewalls may be formed prior to the formation of features 24b and 26b and/or alignment marks 60b, or sidewalls may be formed after the formation of features 24b and 26b and/or alignment marks 60b. Alignment marks having a high contrast material can also be formed during the replication patterning of the device to have the same pattern as a master template. Forming a master template using electron beam micro 15 201014700 or other methods can be time consuming and expensive. Therefore, a copy of the 'master template' can be used as a work template. 11A-11E, 12A-12D, and 13A-13D illustrate an exemplary copying process for forming a replica template 18d from the master template 18c. The replica template 18d includes a high contrast alignment mark 60c. For example, as shown in FIGS. 11A-11E, any standard mask process can be used to create, but is not limited to, a variable shape electron beam, a Gaussian electron beam, a laser exposure, and The main template 18c of other similar processes. The master template 18c can then be used to form features 24c and 26c, as well as alignment marks 60c in substrate 12c as shown in Fig. 11A. For example, imprint lithography techniques, such as those described herein, can be used to form features 24c and 26c, and alignment marks 60c in substrate 12c. The substrate 12c may include a substrate layer 70c, a resist layer 76c, and a temporary hard mask layer 74c. The hard mask layer 74c can be used to improve resist exposure and surname pattern transfer depending on design considerations. It should be noted that, as described in detail above, the hard mask layer 74c may be formed of a high contrast material. Alternatively, a separate layer of high contrast material can be used to join the hard mask layer 74c to form a replica template 18 (1. As shown in FIG. 11B, features 24c and 26c and/or alignment marks 6〇c can be used. Further etched into the hard mask layer 74c and/or the substrate layer 70c. The partial hard mask layer 74c can be removed as shown in FIG. 11C, and the features 24c and 26c and/or the alignment mark 60c are further The substrate layer 70c is engraved. The anti-surname layer can be removed to form a replica template 18d having alignment marks 60c, at least a portion of the alignment marks 6〇c being formed of a high contrast material. The replica template 18d can be further processed. High alignment material. For example, the replica template 18d can be further processed such that only the alignment mark 6A includes a high pair of 16 201014700 specific materials. The 12A-12D diagram illustrates one of the high contrast materials confined to the alignment mark 60c. Exemplary Process. As shown in Figure 12A, a second resist layer 88c can be placed (e.g., imprinted) on the replica template 18. The second resist layer 88c can include one or more alignment blocks. 91. Alignment block 91 can be placed over the alignment mark 6〇〇 for etching and/or removal The removal of the high contrast material from the alignment mark 6A is blocked. Referring to Figure 12B, the second resist layer 88c can be removed to expose at least a portion of the hard mask layer 74C of the feature. The etch can be as in the 12th (: Removing a portion of the hard mask layer 7 4 c ' while aligning the block 9 丨 blocks the etching of at least a second portion of the hard mask layer 74c. For example, the alignment block 81 blocks the alignment mark The hard mask layer 74c of 6〇c is removed. The resist layer 88c can then be removed, providing a replica template 18d having a high contrast material confined in the alignment mark 60c. 13A-13D The high contrast material is limited to another exemplary process in the alignment of the template 18d. As shown in Fig. 13A, a second resist layer 88d can be placed using techniques such as spin coating. A replica of the template 18d. The second resist layer 88d can be gradually formed to form an alignment block 91a that substantially prevents further processing of the alignment marks 60C. As shown in the ncth diagram, the hard mask layer 74<: can be moved In addition, while the alignment block 91a substantially prevents the hard mask layer 74 from being removed from the alignment mark 60c, the resist layer 88d can then be removed, The replica template 18 for the high contrast material is confined in the alignment mark 6〇c (1. The alignment marks 6〇a and/or 6〇b formed by the contrast material provide sufficient visibility to be even absent Alignment is performed in the case of polymerizable material 34. Additionally, as shown in Figures 14 and 15A and 15B, feature 92 can be modified by 17 201014700 ^ to pass more uv wavelengths 'for simultaneous alignment The longer wavelength energy is absorbed, reflected, and/or diffracted. For example, as shown in Fig. 14 and more specifically as shown in Fig. 15A, the 'alignment mark 6〇a' may have a feature 92 around the width. These features 92 can be segmented into small repeating sub-features 94 ranging in size from 5 to thin (10). Aligning the fragments of the marking coffee reduces the area of contact of the comparative material with the polymerizable material 34 during curing (see 碉). Figures 15B and 15C show an alignment mark with a varying pitch stealing 6%. At section 15B, the feature of the alignment marker is spaced by the line to provide a repeating line feature 94 having a size in the range of (10) to fine. In the φth diagram, the feature of the 'alignment mark _' is cut into a checkered pattern, and a repeating square having a size in the range of 5 〇 nm to 20 〇 nm is provided. The spatial allocation of alignment marks 60 can be further reduced by staggered alignment marks 6〇. For example, as shown in Fig. 16, the alignment marks 6() are interleaved with the -lock and (4) placed on the -imprint range 96. The staggered distribution of the embossing range as above may use the same horizontal scribe line spacing for the alignment marks 6 安置 disposed at the top and bottom perimeters of the range 96. Similarly, the same vertical wiping interval can be used for alignment marks 6 placed on the left and right sides of the range 96. The intersection (10) 减少 reduces the scribe width while maintaining the alignment mark 6 〇 in the embossed range % Each of the four corners 98a, 98b, 98c and _ of each of the zones 100a-100d. For example, the alignment marks 6 at the corners 98b and 98d of the region 100a and the alignment marks 60 of the corners 98a and 98c of the region 1b are aligned in a lock and key configuration. In a related event, alignment marks 6 at corners 98c and 98d of zone 100a and alignment marks 60 of corners 98a and 98b of zone 1〇〇c are aligned in a lock and key configuration. This staggered layout over the embossing range % can include the use of alignment marks 60 formed from contrast material 18 201014700. Additionally or in lieu of the high contrast material, the staggered layout on the embossed range 96 can include the use of a sulcus as described in U.S. Patent Application Serial No. 10/9,761, which is incorporated herein by reference. Incorporate this article for reference. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a simplified side view showing an embodiment of a lithography system in accordance with the present invention. Fig. 2 is a simplified side elevational view of the substrate having the patterned layer shown in Fig. 1. The third and third figures illustrate an exemplary embodiment of a template having alignment marks. Figure 4 is a cross-sectional view of the template overlapped with the substrate shown in Figure 1, with the misalignment of the traces in one direction. Figure 5 is a simplified elevational view of the template overlapped with the substrate, depicted in Figure 1, depicting misalignment in one direction. Figure 6 illustrates a top-down view of the template overlapping the substrate depicted in Figure 1, depicting misalignment along two lateral directions. An exemplary embodiment of a template having alignment marks visible during the aligning process is illustrated in Figures 7-7. An embodiment of an exemplary template formation that does not have an alignment mark visible during the alignment process. Figures 9 and 9 depict exemplary embodiments of templates that do not have alignment marks visible during the alignment process, the alignment marks having a protective layer. A third embodiment of the exemplary template formation is shown. 19 201014700 Figures 11A-11E, 12A-12D, and 13A-13D illustrate an exemplary replication process for forming a replica template having high contrast alignment marks. Figure 14 illustrates a top down view of an alignment mark. Figure 15A is an enlarged view of one embodiment of an alignment mark. Fig. 15B is an enlarged view showing another embodiment of an alignment mark which is divided by a line interval pattern. Figure 15C is an enlarged view of another embodiment of an alignment mark that is segmented in a square grid. Figure 16 illustrates the alignment marks interleaved with a key and key arrangement in an embossed range. [Major component symbol description] 10... lithography system 40... energy 12, 12c... substrate 42... path 14... substrate chuck 44... surface 16, 20 to 20b... platform 46... pattern layer 18 to 18 small " template 48... Residual layer 22, 22a, 48a...patterned surface 54...processor 24~24c, 52... recess 56...memory 26~26c,50...bump 60~60c,90...alignment mark 28...chuck 61a 61b...first part 30...imprint head 63a,63b...second part 32...fluid distribution system 64,86b...multilayer substrate 34...polymerizable material 70~70c...substrate layer 38...energy 72...contrast material layer 20 201014700 74~74c, 84... hard mask layer 96···imprint range 76~76c, 78, 82, 88...anti-surname layer 98a~98d...corner 100a~100d ...zone, D2...depthΟ,〇丨〇2...distance Θ···angle 80a...sidewall 87...protective layer 88b~88d...second resist layer 91,91a...alignment block 92,94...features

twenty one

Claims (1)

201014700 VII. Patent Application Range: 1. A method for patterning an imprinted nano lithography substrate, comprising: patterning a first portion of the substrate with a plurality of recesses and a plurality of protrusions; An alignment mark patterning a second portion of the substrate, at least a portion of the alignment mark being formed of a high contrast material; wherein the first portion of the substrate and the second portion of the substrate are the same The steps are patterned. 2. The method of claim 1, wherein an etch depth of the first portion of the substrate is independent of an etch depth of the second portion of the substrate. 3. The method of claim 2, wherein the patterning of the first portion of the substrate further comprises applying a resist layer overlapping the second portion of the substrate such that the substrate The etch depth of the first portion is independent of the etch depth of the second portion of the substrate. 4. The method of claim 1, wherein the alignment mark comprises a protective layer positioned adjacent to the high contrast material. 5. The method of claim 4, wherein the protective layer is an oxide layer. 6. The method of claim 1, wherein the substrate comprises the high contrast material and the patterning of the second portion comprises etching of the substrate, the substrate comprising the high contrast material to form the alignment mark. 7. The method of claim 6 wherein the substrate further comprises a hard mask layer. The method of claim 1, wherein the patterning of the second portion comprises depositing a high contrast material on the alignment mark. 9. The method of claim 1, further comprising patterning a side wall on the substrate. 10. The method of claim 9, wherein the sidewall is patterned on the substrate prior to patterning of the first portion of the substrate. 11. The method of claim 9, wherein the sidewall is patterned on the substrate after patterning of the first portion of the substrate. 12. The method of claim 1, wherein the alignment marks are segmented. The method of claim 12, wherein the alignment marks are divided by line spacing. 14. The method of claim 12, wherein the alignment marks are divided into a square pattern. 15. The method of claim 1, wherein the formation of the alignment marks is interleaved in a embossed range with a lock and key configuration. 16. The method of claim 1, wherein the first portion of the substrate and the second portion of the substrate are patterned to form a replica template. 17. The method of claim 1, wherein the substrate is a nano lithography template. 18. The method of claim 1, wherein at least a portion of the protrusions comprise a high contrast material. 19. A method of forming an imprinted nano lithography template, comprising: 23 201014700 patterning a first portion of a substrate with a plurality of recesses or protrusions, at least a portion of the substrate being highly contrasted Forming a second portion of the substrate with at least one alignment mark, wherein the first portion of the substrate and the second portion of the substrate are in the same nanolithographic patterning step Patterning; placing an alignment block over the alignment mark; removing the high contrast material from the first portion of the substrate; removing the alignment block to form the nano lithography template, wherein the high contrast material It is limited to this alignment mark. 20. A method of patterning an imprinted nano lithography substrate, comprising: patterning the substrate with a plurality of recesses and a plurality of protrusions while patterning at least one alignment mark on the substrate, The alignment mark includes a high contrast material that is visible during imprint lithography of the polymerizable material. twenty four