TWI569463B - The forming method of the coating film and the computer memory medium - Google Patents

The forming method of the coating film and the computer memory medium Download PDF

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Publication number
TWI569463B
TWI569463B TW103121878A TW103121878A TWI569463B TW I569463 B TWI569463 B TW I569463B TW 103121878 A TW103121878 A TW 103121878A TW 103121878 A TW103121878 A TW 103121878A TW I569463 B TWI569463 B TW I569463B
Authority
TW
Taiwan
Prior art keywords
temperature
substrate
heating process
coating liquid
coating film
Prior art date
Application number
TW103121878A
Other languages
English (en)
Chinese (zh)
Other versions
TW201517297A (zh
Inventor
上田健一
Original Assignee
東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東京威力科創股份有限公司 filed Critical 東京威力科創股份有限公司
Publication of TW201517297A publication Critical patent/TW201517297A/zh
Application granted granted Critical
Publication of TWI569463B publication Critical patent/TWI569463B/zh

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00—Details of electric heating devices
    • H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
    • H05B1/0227—Applications
    • H05B1/023—Industrial applications
    • H05B1/0233—Industrial applications for semiconductors manufacturing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6519—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being oxygen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Resistance Heating (AREA)
  • Coating Apparatus (AREA)
  • Drying Of Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
TW103121878A 2013-07-05 2014-06-25 The forming method of the coating film and the computer memory medium TWI569463B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013141295A JP6081879B2 (ja) 2013-07-05 2013-07-05 塗布膜の形成方法、プログラム及びコンピュータ記憶媒体

Publications (2)

Publication Number Publication Date
TW201517297A TW201517297A (zh) 2015-05-01
TWI569463B true TWI569463B (zh) 2017-02-01

Family

ID=52143519

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103121878A TWI569463B (zh) 2013-07-05 2014-06-25 The forming method of the coating film and the computer memory medium

Country Status (3)

Country Link
JP (1) JP6081879B2 (enExample)
TW (1) TWI569463B (enExample)
WO (1) WO2015001936A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016125408A1 (ja) * 2015-02-05 2016-08-11 東京エレクトロン株式会社 研磨装置、塗布膜形成装置、塗布膜形成方法、記憶媒体、パターン形成方法及びパターン形成装置
JP7308671B2 (ja) * 2019-07-03 2023-07-14 東京エレクトロン株式会社 基板熱処理装置、基板熱処理方法及び記憶媒体

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200304469A (en) * 2001-12-17 2003-10-01 Daikin Ind Ltd Crosslinkable elastomer composition and formed product comprising the same
TW200420659A (en) * 2002-11-02 2004-10-16 Honeywell Int Inc Gas layer formation materials
TW201321460A (zh) * 2005-07-05 2013-06-01 日立化成工業股份有限公司 半導體裝置之製造方法及半導體裝置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6381820A (ja) * 1986-09-25 1988-04-12 Toshiba Corp レジストパタ−ン形成方法
JPS6381923A (ja) * 1986-09-26 1988-04-12 Hitachi Ltd 感光性ポリイミド樹脂処理方法および装置
JPH0289059A (ja) * 1988-09-26 1990-03-29 Hitachi Electron Eng Co Ltd ベーク方法
JPH0561206A (ja) * 1991-08-30 1993-03-12 Oki Electric Ind Co Ltd レジストの平坦化方法
JP3282240B2 (ja) * 1992-10-03 2002-05-13 住友金属工業株式会社 帯状材の連続塗装方法
JP3563434B2 (ja) * 1994-03-22 2004-09-08 株式会社神戸製鋼所 感熱自己接着性樹脂塗装金属板およびその製法並びに該樹脂塗装金属板の接合法
JP3801271B2 (ja) * 1996-08-30 2006-07-26 旭硝子株式会社 アクティブマトリクス基板
JP2001188357A (ja) * 1999-12-28 2001-07-10 Matsushita Electric Ind Co Ltd 表示素子用基板への樹脂膜形成法及び装置、並びに該方法を用いた液晶表示装置の製造方法
JP2004002752A (ja) * 2002-03-28 2004-01-08 Toray Ind Inc ポリ（脂環式オレフィン）組成物の処理方法並びに半導体装置、光学部品および有機電界発光装置
JP2008186934A (ja) * 2007-01-29 2008-08-14 Dainippon Screen Mfg Co Ltd 熱処理装置および熱処理方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200304469A (en) * 2001-12-17 2003-10-01 Daikin Ind Ltd Crosslinkable elastomer composition and formed product comprising the same
TW200420659A (en) * 2002-11-02 2004-10-16 Honeywell Int Inc Gas layer formation materials
TW201321460A (zh) * 2005-07-05 2013-06-01 日立化成工業股份有限公司 半導體裝置之製造方法及半導體裝置

Also Published As

Publication number Publication date
WO2015001936A1 (ja) 2015-01-08
TW201517297A (zh) 2015-05-01
JP2015015370A (ja) 2015-01-22
JP6081879B2 (ja) 2017-02-15

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