JP6081879B2 - 塗布膜の形成方法、プログラム及びコンピュータ記憶媒体 - Google Patents

塗布膜の形成方法、プログラム及びコンピュータ記憶媒体 Download PDF

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JP6081879B2
JP6081879B2 JP2013141295A JP2013141295A JP6081879B2 JP 6081879 B2 JP6081879 B2 JP 6081879B2 JP 2013141295 A JP2013141295 A JP 2013141295A JP 2013141295 A JP2013141295 A JP 2013141295A JP 6081879 B2 JP6081879 B2 JP 6081879B2
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temperature
heating step
substrate
wafer
heating
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Japanese (ja)
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JP2015015370A5 (enExample
JP2015015370A (ja
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上田　健一
健一 上田
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2013141295A priority Critical patent/JP6081879B2/ja
Priority to PCT/JP2014/065576 priority patent/WO2015001936A1/ja
Priority to TW103121878A priority patent/TWI569463B/zh
Publication of JP2015015370A publication Critical patent/JP2015015370A/ja
Publication of JP2015015370A5 publication Critical patent/JP2015015370A5/ja
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00—Details of electric heating devices
    • H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
    • H05B1/0227—Applications
    • H05B1/023—Industrial applications
    • H05B1/0233—Industrial applications for semiconductors manufacturing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6519—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being oxygen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Resistance Heating (AREA)
  • Coating Apparatus (AREA)
  • Drying Of Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP2013141295A 2013-07-05 2013-07-05 塗布膜の形成方法、プログラム及びコンピュータ記憶媒体 Active JP6081879B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2013141295A JP6081879B2 (ja) 2013-07-05 2013-07-05 塗布膜の形成方法、プログラム及びコンピュータ記憶媒体
PCT/JP2014/065576 WO2015001936A1 (ja) 2013-07-05 2014-06-12 塗布膜の形成方法及びコンピュータ記憶媒体
TW103121878A TWI569463B (zh) 2013-07-05 2014-06-25 The forming method of the coating film and the computer memory medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013141295A JP6081879B2 (ja) 2013-07-05 2013-07-05 塗布膜の形成方法、プログラム及びコンピュータ記憶媒体

Publications (3)

Publication Number Publication Date
JP2015015370A JP2015015370A (ja) 2015-01-22
JP2015015370A5 JP2015015370A5 (enExample) 2015-08-06
JP6081879B2 true JP6081879B2 (ja) 2017-02-15

Family

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JP2013141295A Active JP6081879B2 (ja) 2013-07-05 2013-07-05 塗布膜の形成方法、プログラム及びコンピュータ記憶媒体

Country Status (3)

Country Link
JP (1) JP6081879B2 (enExample)
TW (1) TWI569463B (enExample)
WO (1) WO2015001936A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016125408A1 (ja) * 2015-02-05 2016-08-11 東京エレクトロン株式会社 研磨装置、塗布膜形成装置、塗布膜形成方法、記憶媒体、パターン形成方法及びパターン形成装置
JP7308671B2 (ja) * 2019-07-03 2023-07-14 東京エレクトロン株式会社 基板熱処理装置、基板熱処理方法及び記憶媒体

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6381820A (ja) * 1986-09-25 1988-04-12 Toshiba Corp レジストパタ−ン形成方法
JPS6381923A (ja) * 1986-09-26 1988-04-12 Hitachi Ltd 感光性ポリイミド樹脂処理方法および装置
JPH0289059A (ja) * 1988-09-26 1990-03-29 Hitachi Electron Eng Co Ltd ベーク方法
JPH0561206A (ja) * 1991-08-30 1993-03-12 Oki Electric Ind Co Ltd レジストの平坦化方法
JP3282240B2 (ja) * 1992-10-03 2002-05-13 住友金属工業株式会社 帯状材の連続塗装方法
JP3563434B2 (ja) * 1994-03-22 2004-09-08 株式会社神戸製鋼所 感熱自己接着性樹脂塗装金属板およびその製法並びに該樹脂塗装金属板の接合法
JP3801271B2 (ja) * 1996-08-30 2006-07-26 旭硝子株式会社 アクティブマトリクス基板
JP2001188357A (ja) * 1999-12-28 2001-07-10 Matsushita Electric Ind Co Ltd 表示素子用基板への樹脂膜形成法及び装置、並びに該方法を用いた液晶表示装置の製造方法
US7495046B2 (en) * 2001-12-17 2009-02-24 Daikin Industries, Ltd. Crosslinkable elastomer composition and formed product comprising the same
JP2004002752A (ja) * 2002-03-28 2004-01-08 Toray Ind Inc ポリ（脂環式オレフィン）組成物の処理方法並びに半導体装置、光学部品および有機電界発光装置
US20040084774A1 (en) * 2002-11-02 2004-05-06 Bo Li Gas layer formation materials
CN102290334B (zh) * 2005-07-05 2015-03-11 日立化成株式会社 半导体装置的制造方法
JP2008186934A (ja) * 2007-01-29 2008-08-14 Dainippon Screen Mfg Co Ltd 熱処理装置および熱処理方法

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Publication number Publication date
TWI569463B (zh) 2017-02-01
WO2015001936A1 (ja) 2015-01-08
TW201517297A (zh) 2015-05-01
JP2015015370A (ja) 2015-01-22

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