TWI569338B - 將半導體晶片從箔拆下的方法 - Google Patents

將半導體晶片從箔拆下的方法 Download PDF

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TWI569338B
TWI569338B TW102111159A TW102111159A TWI569338B TW I569338 B TWI569338 B TW I569338B TW 102111159 A TW102111159 A TW 102111159A TW 102111159 A TW102111159 A TW 102111159A TW I569338 B TWI569338 B TW I569338B
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恩斯特 巴梅特勒
富賓恩 赫斯奇勒
布萊恩 普利斯
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貝西瑞士股份有限公司
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Description

將半導體晶片從箔拆下的方法
本發明涉及一種將半導體晶片從箔拆下的方法。
半導體晶片通常被設置在由框架保持的箔上以用於在半導體安裝裝置上處理，在本領域中該箔也被稱為膠帶。半導體晶片粘在箔上。通過可移位的晶片台容納具有箔的框架。該晶片台被移位，以在某一位置處依次提供半導體晶片，並且所提供的半導體晶片被晶片夾具拾取並且被迴圈地放置在基板上。由佈置在箔下方的晶片排出器(在本領域被稱為晶粒排出器)支援從箔上移走所提供的半導體晶片的操作。
從US 7115482中獲知從箔拆下半導體晶片的方法，其中使用具有彼此相鄰設置的多個板的晶粒排出器。板被一起提升以拆下半導體晶片並且然後從外部到內部被順序地降低，或者從外部到內部順序地被提升以形成突出超過支承平面的錐體隆起。也可以從TW201025483、US 2010-252205和US 8092645中獲知這樣的晶粒排出器和方法。
本發明基於進一步改進這樣的拆卸方法的目標。
根據本發明，晶片夾具和包括具有直線支承邊緣的第一板和具有L型支承邊緣的第二板的晶粒排出器被用於將半導體晶片從箔拆下。在初始位置，板的支承邊緣形成箔擱置在其上的的支承平面。所述方法包括以下步驟：A)提升所述板，使得板的支承邊緣佔據晶粒排出器的蓋板的表面上方的高度H1；B)降低具有L型支承邊緣的第一對板；C)可選地，降低具有L型支承邊緣的第二對板；D)提升還未被降低的板，使得還沒有被降低的板的支承邊緣佔據蓋板的表面上方的高度H2>H1；E)按照特定的順序，交錯降低還未被降低的板，並且至少一個或幾個板未被降低；F)可選地，降低至少還未被降低的板，使得還未被降低的板的支承邊緣佔據蓋板的表面上方的高度H3<H2；G)降低還未被降低的板直到所有的板都被降低，以及H)移走具有半導體晶片的晶片夾具，其中最遲在降低最後三個板之前，將晶片夾具定位在半導體晶片上方，並且降低所述晶片夾具直到它觸及所述半導體晶片。
優選地，板被固定到載體，載體可垂直於蓋板的表面移位，並且板可相對於載體被提升和降低。在初始位置，載體被設置在預定位置z0上，並且相對於載體提升板，使得板的支承邊緣形成箔擱置在其上的支承平面。優選地，在步驟A中載體被提升預定距離△z1，在步驟D中載體被提升預定距離△z2，以及在可選的步驟F中載體被降低預定距離△z3。
被併入該說明書並構成該說明書的一部分的附圖示出本發明的一個或更多個實施例，並且與具體說明一起用於解釋本發明的原理和實施。附圖不是真實的尺寸。
1‧‧‧晶粒排出器
2‧‧‧腔
3‧‧‧蓋板
4‧‧‧箔
5‧‧‧半導體晶片
6‧‧‧孔
7‧‧‧附加孔
8‧‧‧板
9‧‧‧載體
10‧‧‧第一驅動器
11‧‧‧第二驅動器
12‧‧‧蓋板表面
13‧‧‧空隙
16‧‧‧晶片夾具
19‧‧‧邊緣
圖1示出晶粒排出器的側視圖和剖面圖。
圖2以俯視圖示出晶粒排出器。
圖3以立體圖示出具有L型支承邊緣的板。
圖4示出晶粒排出器的板的支承邊緣的俯視圖。
圖5至圖13示出拆卸過程的快照。
圖1示出具有主要從EP 2184765中獲知的構造的晶粒排出器1的側視剖面圖。晶粒排出器1包括封閉腔2，其可以被提供有真空並且包括優選可移動和可交換的蓋板3，具有半導體晶片5的箔4的一部分擱置在該蓋板3上。還可以由晶粒排出器1的外殼或其部分形成腔2。蓋板3還可以是蓋子。蓋板3包含在中部的 矩形孔6並且優選地包含多個附加孔7，該矩形孔6大約和半導體晶片5一樣大，所述多個附加孔7僅在圖2中示出並且用於在腔2被提供有真空時吸取箔4。晶粒排出器1還包括在腔2內部被相鄰佈置並且固定到載體9的多個板8。晶粒排出器1包括第一驅動器10，該第一驅動器10用於使載體9垂直於蓋板3的表面12，即在該情況下沿z方向移位。晶粒排出器1包括第二驅動器11，該第二驅動器11用於使板8相對於載體9在垂直於蓋板3的表面12的方向上移位。因此載體9和板8二者能夠被相對於箔4的表面提升和降低。
板8突出到蓋板3的中心孔6中。在板8和孔6的邊緣之間存在周邊空隙13。腔2可以被提供有真空。晶粒排出器1的蓋板3的孔6內的板8佔據的面積優選稍微小於半導體晶片5的面積，也就是以這樣的方法確定尺寸，即半導體晶片5將在橫向方向上的所有邊上超出板8所佔據的面積大約0.5至1mm。板8的數目和形狀取決於半導體晶片5的尺寸。
在半導體晶片非常小的情況下，即通常在具有至多大約5mm的邊緣長度的半導體晶片5的情況下，將僅使用具有直線支承邊緣的板8。在中等尺寸半導體晶片的情況下，即通常在具有處於大約5至7mm的範圍中的邊緣長度的半導體晶片5的情況下，將使用具有直線支承邊緣的板8和具有L型支承邊緣的一對板。在半導體晶片5更大的情況下，將使用具有直線支承邊緣的板8和具有L型支承邊緣的兩對或更多對(通常兩對)板 8。具有直線支承邊緣的板8被佈置在中央並分別被具有L型支承邊緣的板成對地包圍。
由於顯示清晰度的緣故，圖1中僅示出具有直線支承邊緣的板8。圖3示出具有L型支承邊緣19的板8的立體圖。在該實施例中，支承邊緣19設有多個齒，以使在齒之間的中間空間中的真空將達到箔4的底側並且因此將增加吸取力。支承邊緣還可以被佈置為沒有齒，即，是平坦邊緣。
圖4示出構造用於相對大的半導體晶片的晶粒排出器1的板8的支承邊緣19的俯視圖。該實施例中的板包括具有直線支承邊緣的9個板8A和具有L型支承邊緣的兩對板8B和8C，即共有具有L型支承邊緣的四個板。詞語“直線”和“L型”涉及支承邊緣19在支承平面中的形狀。
具有L型支承邊緣的第一對板8B(內部之對)包圍具有直線支承邊緣的板8A。具有L型支承邊緣的第二對板8C(外部之對)包圍具有L型支承邊緣的內部對板8B。
借助於與晶片夾具16(圖10)配合的晶粒排出器1，發生半導體晶片5從箔4的拆卸和移除。晶片夾具16有利地包含吸取構件，該吸取構件可以被提供有真空並且將吸住半導體晶片並緊緊保持該晶片。晶片夾具16還可以包含基於伯努利效應的吸取構件，該吸取構件需要被提供有壓縮空氣以便實現吸入效應。將參考圖5至圖13詳細解釋拆卸半導體晶片的方法，所述圖分別表 示快照。圖5至圖13中未示出箔4和用於移動板8的驅動設備。板8在正z方向上的移動將會被指定為提升，而板8在負z方向上的移動將會被指定為降低。
為了將下一個半導體晶片從箔4拆下，箔4被相對於晶粒排出器1移位，使得將待拆下的半導體晶片5定位在蓋板3的孔6上方。另外，所有的板8被相對於載體9提升，使得它們的支承邊緣19位於公共平面中，並且載體9被帶入至預定位置z0，在預定位置z0中支承邊緣19與蓋板3的表面12齊平。在該初始位置中，箔4擱置在板8的支承邊緣19上。用於從箔4拆下半導體晶片5的方法包括以下步驟：A)提供真空的腔2，從而箔4被吸向蓋板3；B)以預定距離△z1提升載體9，使得板8的支承邊緣19將佔據蓋板3的表面12上方的高度H1；C)降低具有L型支承邊緣的一對最外部的板8C；D)可選地，降低具有L型支承邊緣的一對內部板8B；E)以預定距離△z2提升載體9，使得還沒有被降低的板的支承邊緣將佔據蓋板3的表面12上方的高度H2>H1；F)按照預定的順序，交錯降低還未被降低的板8，並且至少一個或幾個(優選三個)板8A未被降低；G)可選地，降低載體9預定距離△z3，使得還未被降低的板的支承邊緣佔據蓋板3的表面12上方的高度H3<H2；H)交錯降低還未被降低的板8A； I)移走具有半導體晶片5的夾具16；J)其中最遲在降低最後三個板8A之前，將晶片夾具16定位在半導體晶片5上方，並且降低晶片夾具16直到它觸及並緊緊保持半導體晶片5。
圖5示出初始位置的快照。
圖6示出步驟B之後的快照。
圖7示出步驟C之後的快照。
圖8示出步驟E之後的快照。
圖9至圖11示出E和G之間連續的快照。
圖12示出步驟G之後的快照。
圖13示出步驟H之後的快照。
降低相應的下一個板能夠在前面的板被全部降低之前發生，如圖8至圖12所示。晶片夾具16的支承的用於從半導體晶片5拆下箔4所需的時間點取決於以下幾個因素，諸如半導體晶片5的厚度、半導體晶片5的尺寸、箔4的粘附力、由真空施加在箔4上的吸力。越晚需要使用晶片夾具16，自動組裝機的生產率就越大。
為了準備下一個半導體晶片5的移除，板8再次被帶回到初始位置。
使用具有L型支承邊緣的板降低了機械負載對鄰近的半導體晶片的影響，並且因此允許達到大於現有技術水準的高度H2，這促進了半導體晶片從箔的拆卸。
儘管本發明的實施例和應用已經被示出且描述，但對於獲得本說明書的益處的本領域技術人員來說顯而易見的是，在不背離本發明的構思的情況下，除上 文提及之外的許多更多的修改是可能的。因此，除了所附權利要求及其等同物的精神之外，本發明不被限制。
3‧‧‧蓋板
5‧‧‧半導體晶片
8‧‧‧板
12‧‧‧蓋板表面

Claims (6)

  1. 一種借助於晶片夾具(16)和晶粒排出器(1)將半導體晶片(5)從箔(4)拆下的方法，其中所述晶粒排出器(1)包括具有直線支承邊緣的內部板(8A)和具有L型支承邊緣的外部板(8B、8C)，所述內部板及外部板(8A、8B、8C)突入蓋板(3)的中心孔內，且其中位於初始位置的所述板(8A、8B、8C)的支承邊緣(19)形成擱置有所述箔(4)的支承平面，所述方法包括以下步驟：A)提升所述板(8A、8B、8C)，使得所述板(8A、8B、8C)的所述支承邊緣(19)位在所述蓋板(3)的表面(12)上方的高度H1；B)降低一對最外部的所述外部板(8C)；C)提升至少還未被降低的板，使得還沒有被降低的板的支承邊緣(19)位在所述蓋板(3)的所述表面(12)上方的高度H2>H1；D)按照預定的順序，交錯降低還未被降低的板，並且所述板中至少一者或多者不被降低；E)將所述晶片夾具(16)定位在所述半導體晶片(5)上方；F)在降低最後三個板之前，降低所述晶片夾具(16)至與所述半導體晶片(5)成接觸；G)降低還未被降低的板直到所有的板(8A)都已降低；其中步驟A至D依照上述的順序且在步驟F與步驟G之前執行。
  2. 如申請專利範圍第1項所述之方法，其中另外的兩個 外部板係被配置以形成第二對的第二最外部板(8B)，所述方法更進一步包括：在步驟B之後，降低所述第二對的第二最外部板(8B)。
  3. 如申請專利範圍第1項所述之方法，更進一步包括：在步驟D之後，降低至少還未被降低的板，使得還未被降低的板的支承邊緣佔據所述蓋板(3)的所述表面(12)上方的高度H3<H2。
  4. 如申請專利範圍第2項所述之方法，更進一步包括：在步驟D之後，降低至少還未被降低的板，使得還未被降低的板的支承邊緣佔據所述蓋板(3)的所述表面(12)上方的高度H3<H2。
  5. 如申請專利範圍第1或2項所述之方法，其中所述板(8A、8B、8C)被固定到載體(9)，所述載體(9)能夠垂直於所述蓋板(3)的所述表面(12)移位，並且所述板(8A、8B、8C)能夠相對於所述載體(9)提升和降低，在初始位置所述載體(9)被設置在預定位置z0中，並且相對於所述載體(9)提升所述板(8A、8B、8C)，使得所述板(8A、8B、8C)的所述支承邊緣(19)形成擱置有所述箔(4)的支承平面，且其中所述方法更進一步包括：在步驟A中將所述載體(9)提升預定距離△z1；在步驟C中將所述載體(9)提升預定距離△z2。
  6. 如申請專利範圍第3或4項所述之方法，其中所述板(8A、8B、8C)被固定到載體(9)，所述載體(9)能夠垂直於所述蓋板(3)的所述表面(12)移位，並且所述板(8A、 8B、8C)能夠相對於所述載體(9)被提升和降低，在初始位置所述載體(9)被設置在預定位置z0中，並且相對於所述載體(9)提升所述板(8A、8B、8C)，使得所述板(8A、8B、8C)的所述支承邊緣(19)形成擱置有所述箔(4)的支承平面，且其中所述方法更進一步包括：在步驟A中將所述載體(9)提升預定距離△z1；在步驟C中將所述載體(9)提升預定距離△z2，以及在步驟D之後將所述載體(9)降低預定距離△z3。
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