TWI561936B - Position determination in a lithography system using a substrate having a partially reflective position mark - Google Patents

Position determination in a lithography system using a substrate having a partially reflective position mark

Info

Publication number
TWI561936B
TWI561936B TW101114337A TW101114337A TWI561936B TW I561936 B TWI561936 B TW I561936B TW 101114337 A TW101114337 A TW 101114337A TW 101114337 A TW101114337 A TW 101114337A TW I561936 B TWI561936 B TW I561936B
Authority
TW
Taiwan
Prior art keywords
substrate
lithography system
partially reflective
position determination
position mark
Prior art date
Application number
TW101114337A
Other languages
English (en)
Other versions
TW201250399A (en
Inventor
Niels Vergeer
Boer Guido De
Original Assignee
Mapper Lithography Ip Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mapper Lithography Ip Bv filed Critical Mapper Lithography Ip Bv
Publication of TW201250399A publication Critical patent/TW201250399A/zh
Application granted granted Critical
Publication of TWI561936B publication Critical patent/TWI561936B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/248—Components associated with the control of the tube
    • H01J2237/2482—Optical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30433—System calibration
    • H01J2237/30438—Registration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31774—Multi-beam
TW101114337A 2011-04-22 2012-04-23 Position determination in a lithography system using a substrate having a partially reflective position mark TWI561936B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161478126P 2011-04-22 2011-04-22
US201161491862P 2011-05-31 2011-05-31

Publications (2)

Publication Number Publication Date
TW201250399A TW201250399A (en) 2012-12-16
TWI561936B true TWI561936B (en) 2016-12-11

Family

ID=46125501

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101114337A TWI561936B (en) 2011-04-22 2012-04-23 Position determination in a lithography system using a substrate having a partially reflective position mark

Country Status (8)

Country Link
US (1) US9395635B2 (zh)
EP (1) EP2699967B1 (zh)
JP (1) JP6100241B2 (zh)
KR (1) KR101780089B1 (zh)
CN (1) CN103582848B (zh)
NL (2) NL2008679C2 (zh)
TW (1) TWI561936B (zh)
WO (1) WO2012144904A2 (zh)

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US10168450B2 (en) * 2013-12-27 2019-01-01 Sunasic Technologies, Inc. Silicon wafer having colored top side
US9484188B2 (en) * 2015-03-11 2016-11-01 Mapper Lithography Ip B.V. Individual beam pattern placement verification in multiple beam lithography
EP3404488A1 (en) 2017-05-19 2018-11-21 ASML Netherlands B.V. Method of measuring a target, metrology apparatus, lithographic cell, and target
WO2019166078A1 (de) * 2018-02-27 2019-09-06 Ev Group E. Thallner Gmbh Markenfeld, verfahren und vorrichtung zur bestimmung von positionen
NL2024850A (en) * 2019-02-21 2020-08-31 Asml Holding Nv Wafer alignment using form birefringence of targets or product
WO2021073854A1 (en) * 2019-10-14 2021-04-22 Asml Holding N.V. Metrology mark structure and method of determining metrology mark structure
DE102020201198B4 (de) 2020-01-31 2023-08-17 Carl Zeiss Industrielle Messtechnik Gmbh Verfahren und Anordnung zum Ermitteln einer Position und/oder einer Ausrichtung eines beweglichen Objekts einer Anordnung von Objekten
DE102020215960A1 (de) 2020-01-31 2021-08-05 Carl Zeiss Industrielle Messtechnik Gmbh Verfahren und Anordnung zum Ermitteln einer Position eines Objekts

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EP2699967A2 (en) 2014-02-26
US20120267802A1 (en) 2012-10-25
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TW201250399A (en) 2012-12-16
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WO2012144904A2 (en) 2012-10-26
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WO2012144904A4 (en) 2013-09-12
KR101780089B1 (ko) 2017-09-19
CN103582848A (zh) 2014-02-12
EP2699967B1 (en) 2023-09-13
CN103582848B (zh) 2018-05-08
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US9395635B2 (en) 2016-07-19
KR20140030201A (ko) 2014-03-11

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