TWI560876B - Conductivity improvements for iii-v semiconductor devices - Google Patents

Conductivity improvements for iii-v semiconductor devices

Info

Publication number
TWI560876B
TWI560876B TW099141903A TW99141903A TWI560876B TW I560876 B TWI560876 B TW I560876B TW 099141903 A TW099141903 A TW 099141903A TW 99141903 A TW99141903 A TW 99141903A TW I560876 B TWI560876 B TW I560876B
Authority
TW
Taiwan
Prior art keywords
iii
semiconductor devices
conductivity improvements
conductivity
semiconductor
Prior art date
Application number
TW099141903A
Other languages
English (en)
Other versions
TW201131761A (en
Inventor
Marko Radosavljevic
Prashant Majhi
Jack T Kavalieros
Niti Goel
Wilman Tsai
Niloy Mukherjee
Yong Ju Lee
Gilbert Dewey
Willy Rachmady
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of TW201131761A publication Critical patent/TW201131761A/zh
Application granted granted Critical
Publication of TWI560876B publication Critical patent/TWI560876B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • H01L21/2256—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides through the applied layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66431—Unipolar field-effect transistors with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
TW099141903A 2009-12-23 2010-12-02 Conductivity improvements for iii-v semiconductor devices TWI560876B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/646,711 US8936976B2 (en) 2009-12-23 2009-12-23 Conductivity improvements for III-V semiconductor devices

Publications (2)

Publication Number Publication Date
TW201131761A TW201131761A (en) 2011-09-16
TWI560876B true TWI560876B (en) 2016-12-01

Family

ID=44149838

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099141903A TWI560876B (en) 2009-12-23 2010-12-02 Conductivity improvements for iii-v semiconductor devices

Country Status (8)

Country Link
US (2) US8936976B2 (zh)
EP (1) EP2517253B1 (zh)
JP (3) JP5872478B2 (zh)
KR (1) KR101394136B1 (zh)
CN (1) CN102652363B (zh)
HK (1) HK1174439A1 (zh)
TW (1) TWI560876B (zh)
WO (1) WO2011087610A2 (zh)

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8759877B2 (en) * 2010-06-01 2014-06-24 Ishiang Shih Stress release structures for metal electrodes of semiconductor devices
JP5185341B2 (ja) * 2010-08-19 2013-04-17 株式会社東芝 半導体装置及びその製造方法
US20120080749A1 (en) * 2010-09-30 2012-04-05 Purtell Robert J Umos semiconductor devices formed by low temperature processing
JP5685917B2 (ja) * 2010-12-10 2015-03-18 富士通株式会社 半導体装置及び半導体装置の製造方法
TWI481025B (zh) * 2011-09-30 2015-04-11 Win Semiconductors Corp 高電子遷移率電晶體改良結構及其製程方法
US8884308B2 (en) * 2011-11-29 2014-11-11 Taiwan Semiconductor Manufacturing Company, Ltd. High electron mobility transistor structure with improved breakdown voltage performance
KR20130066396A (ko) 2011-12-12 2013-06-20 삼성전기주식회사 질화물 반도체 소자 및 그 제조 방법
US8860088B2 (en) * 2012-02-23 2014-10-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method of forming the same
US9111905B2 (en) 2012-03-29 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. High electron mobility transistor and method of forming the same
US20130299895A1 (en) 2012-05-09 2013-11-14 Taiwan Semiconductor Manufacturing Co., Ltd. Iii-v compound semiconductor device having dopant layer and method of making the same
CN103022135B (zh) * 2012-12-14 2015-08-26 中国科学院微电子研究所 一种iii-v族半导体纳米线晶体管器件及其制作方法
US8829567B2 (en) * 2012-12-28 2014-09-09 Sematech, Inc. Metal alloy with an abrupt interface to III-V semiconductor
US9525054B2 (en) * 2013-01-04 2016-12-20 Taiwan Semiconductor Manufacturing Company, Ltd. High electron mobility transistor and method of forming the same
KR102083495B1 (ko) 2013-01-07 2020-03-02 삼성전자 주식회사 Ｃｍｏｓ 소자와 이를 포함하는 광학장치와 그 제조방법
EP2763159A1 (en) * 2013-01-30 2014-08-06 University College Cork Improved low resistance contacts for semiconductor devices
US20140209920A1 (en) * 2013-01-31 2014-07-31 Taiwan Semiconductor Manufacturing Co., Ltd. High Electron Mobility Transistor Structure
EP2775528B1 (en) 2013-03-05 2019-07-17 IMEC vzw Passivated III-V or Ge fin-shaped field effect transistor
US9666684B2 (en) * 2013-07-18 2017-05-30 Globalfoundries Inc. III-V semiconductor device having self-aligned contacts
US9263569B2 (en) * 2013-08-05 2016-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. MISFET device and method of forming the same
US9455342B2 (en) * 2013-11-22 2016-09-27 Cambridge Electronics, Inc. Electric field management for a group III-nitride semiconductor device
US10032911B2 (en) 2013-12-23 2018-07-24 Intel Corporation Wide band gap transistor on non-native semiconductor substrate
US9306014B1 (en) * 2013-12-27 2016-04-05 Power Integrations, Inc. High-electron-mobility transistors
US9449827B2 (en) 2014-02-04 2016-09-20 International Business Machines Corporation Metal semiconductor alloy contact resistance improvement
US9640656B2 (en) 2014-04-04 2017-05-02 Micron Technology, Inc. Transistors having strained channel under gate in a recess
CN104465746B (zh) * 2014-09-28 2018-08-10 苏州能讯高能半导体有限公司 一种hemt器件及其制造方法
US20170345900A1 (en) * 2014-12-23 2017-11-30 Intel Corporation Diffusion tolerant iii-v semiconductor heterostructures and devices including the same
CN107004711B (zh) 2014-12-23 2021-04-06 英特尔公司 用于非平面半导体器件鳍下中的iii-v族半导体合金及其形成方法
US10211327B2 (en) * 2015-05-19 2019-02-19 Intel Corporation Semiconductor devices with raised doped crystalline structures
US9972711B2 (en) 2015-06-03 2018-05-15 International Business Machines Corporation Reduced resistance short-channel InGaAs planar MOSFET
TWI626742B (zh) * 2015-06-18 2018-06-11 台達電子工業股份有限公司 半導體裝置
US9515165B1 (en) 2015-09-11 2016-12-06 International Business Machines Corporation III-V field effect transistor (FET) with reduced short channel leakage, integrated circuit (IC) chip and method of manufacture
US10720428B2 (en) * 2015-11-10 2020-07-21 Qorvo Us, Inc. High bandgap Schottky contact layer device
US9461159B1 (en) * 2016-01-14 2016-10-04 Northrop Grumman Systems Corporation Self-stop gate recess etching process for semiconductor field effect transistors
JP2017168768A (ja) 2016-03-18 2017-09-21 三菱電機株式会社 電界効果トランジスタおよびその製造方法
US10128364B2 (en) * 2016-03-28 2018-11-13 Nxp Usa, Inc. Semiconductor devices with an enhanced resistivity region and methods of fabrication therefor
US9859421B1 (en) 2016-09-21 2018-01-02 International Business Machines Corporation Vertical field effect transistor with subway etch replacement metal gate
US10084074B1 (en) * 2017-03-24 2018-09-25 Qualcomm Incorporated Compound semiconductor field effect transistor gate length scaling
CN106972056B (zh) * 2017-04-20 2019-12-03 郑州大学 基于BCB钝化的抗质子辐照InP基HEMT器件及其加工方法
US11309412B1 (en) * 2017-05-17 2022-04-19 Northrop Grumman Systems Corporation Shifting the pinch-off voltage of an InP high electron mobility transistor with a metal ring
US10756206B2 (en) 2017-07-10 2020-08-25 Qualcomm Incorporated High power compound semiconductor field effect transistor devices with low doped drain
US10453844B2 (en) 2017-12-06 2019-10-22 International Business Machines Corporation Techniques for enhancing vertical gate-all-around FET performance
US10546787B2 (en) 2018-06-04 2020-01-28 International Business Machines Corporation Multi-metal dipole doping to offer multi-threshold voltage pairs without channel doping for highly scaling CMOS device
FR3086101B1 (fr) * 2018-09-17 2022-07-08 Ion Beam Services Dispositif d'amelioration de la mobilite des porteurs dans un canal de mosfet sur carbure de silicium
WO2020076759A1 (en) * 2018-10-09 2020-04-16 Micron Technology, Inc. Transistors including heterogeneous channels, and related devices, electronic systems, and methods
EP3660885B1 (en) 2018-11-28 2023-05-24 Infineon Technologies AG Group iii nitride device and method of fabricating an ohmic contact for a group iii nitride-based device
CN110112073B (zh) * 2019-04-22 2021-09-24 中国科学院微电子研究所 场效应晶体管制备方法及场效应晶体管
US11245022B2 (en) * 2019-05-24 2022-02-08 Applied Materials, Inc. Integrated dipole flow for transistor
CN112740418B (zh) * 2020-12-14 2023-05-02 英诺赛科(苏州)科技有限公司 半导体装置和其制造方法
US20220336649A1 (en) * 2021-04-15 2022-10-20 Vanguard International Semiconductor Corporation High electron mobility transistor and fabrication method thereof
US20230246088A1 (en) * 2022-02-01 2023-08-03 Stmicroelectronics S.R.L. Manufacturing process of an ohmic contact of a hemt device and hemt device

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01264270A (ja) * 1988-04-15 1989-10-20 Hitachi Ltd 半導体装置
JPH06188274A (ja) * 1992-12-17 1994-07-08 Hitachi Ltd ヘテロ接合電界効果トランジスタ
US20010038103A1 (en) * 1997-03-05 2001-11-08 Kabushiki Kaisha Toshiba Light emitting semiconductor device and method for fabricating same
US6316793B1 (en) * 1998-06-12 2001-11-13 Cree, Inc. Nitride based transistors on semi-insulating silicon carbide substrates
US6867078B1 (en) * 2003-11-19 2005-03-15 Freescale Semiconductor, Inc. Method for forming a microwave field effect transistor with high operating voltage
US20050199954A1 (en) * 2002-06-07 2005-09-15 Amberwave Systems Corporation Methods for forming strained-semiconductor-on-insulator device structures by mechanically inducing strain
US20060060132A1 (en) * 2002-10-15 2006-03-23 Masahiko Hata Production method for thin-film crystal wafer, semiconductor device using it and production method therefor
TW200620666A (en) * 2004-11-23 2006-06-16 Cree Inc Cap layers and/or passivation layers for nitride-based transistors, transistor structures and methods of fabricating same

Family Cites Families (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59119766A (ja) 1982-12-25 1984-07-11 Fujitsu Ltd 半導体装置の製造方法
JPS60206177A (ja) * 1984-03-30 1985-10-17 Fujitsu Ltd 半導体装置の製造方法
US5144410A (en) * 1989-03-29 1992-09-01 Vitesse Semiconductor Corporation Ohmic contact for III-V semiconductor devices
JPH02266534A (ja) * 1989-04-07 1990-10-31 Nec Corp 半導体装置の製造方法
JPH04116938A (ja) 1990-09-07 1992-04-17 Sony Corp 電界効果トランジスタの製法
JP2970783B2 (ja) 1991-07-03 1999-11-02 富士通株式会社 高電子移動度トランジスタとその製造方法
US5234848A (en) * 1991-11-05 1993-08-10 Texas Instruments Incorporated Method for fabricating lateral resonant tunneling transistor with heterojunction barriers
JP3021893B2 (ja) 1991-12-19 2000-03-15 三洋電機株式会社 電界効果トランジスタの形成方法
JPH07263664A (ja) 1994-03-17 1995-10-13 Hitachi Ltd 半導体装置およびその製造方法
JP3361922B2 (ja) * 1994-09-13 2003-01-07 株式会社東芝 半導体装置
JPH0974186A (ja) 1995-09-05 1997-03-18 Mitsubishi Electric Corp 化合物半導体装置及びその製造方法
JPH10125901A (ja) * 1996-10-17 1998-05-15 Mitsubishi Electric Corp 電界効果トランジスタ，及びその製造方法
US6198116B1 (en) * 1998-04-14 2001-03-06 The United States Of America As Represented By The Secretary Of The Air Force Complementary heterostructure integrated single metal transistor fabrication method
JP4507285B2 (ja) * 1998-09-18 2010-07-21 ソニー株式会社 半導体装置及びその製造方法
JP3762588B2 (ja) 1999-10-05 2006-04-05 富士通株式会社 半導体装置の製造方法
US6521961B1 (en) * 2000-04-28 2003-02-18 Motorola, Inc. Semiconductor device using a barrier layer between the gate electrode and substrate and method therefor
US6686616B1 (en) * 2000-05-10 2004-02-03 Cree, Inc. Silicon carbide metal-semiconductor field effect transistors
JP3430206B2 (ja) 2000-06-16 2003-07-28 学校法人 名城大学 半導体素子の製造方法及び半導体素子
JP2002217212A (ja) 2001-01-19 2002-08-02 Murata Mfg Co Ltd ヘテロ接合電界効果トランジスタ
US6737288B2 (en) 2001-05-24 2004-05-18 Mitsubishi Denki Kabushiki Kaisha Method for fabricating a semiconductor device
US6952040B2 (en) 2001-06-29 2005-10-04 Intel Corporation Transistor structure and method of fabrication
JP2004111910A (ja) 2002-07-25 2004-04-08 Matsushita Electric Ind Co Ltd コンタクト形成方法および半導体装置
US20040021152A1 (en) * 2002-08-05 2004-02-05 Chanh Nguyen Ga/A1GaN Heterostructure Field Effect Transistor with dielectric recessed gate
JP2004103707A (ja) 2002-09-06 2004-04-02 Hitachi Cable Ltd Ｉｉｉ−ｖ族化合物半導体素子
JP2004247709A (ja) 2003-01-22 2004-09-02 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US7064359B2 (en) * 2003-08-20 2006-06-20 Matsushita Electric Industrial Co., Ltd. Switching semiconductor device and switching circuit
DE102004058431B4 (de) * 2003-12-05 2021-02-18 Infineon Technologies Americas Corp. III-Nitrid Halbleitervorrichtung mit Grabenstruktur
JP2005210105A (ja) 2003-12-26 2005-08-04 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US7183184B2 (en) 2003-12-29 2007-02-27 Intel Corporation Method for making a semiconductor device that includes a metal gate electrode
US7432142B2 (en) * 2004-05-20 2008-10-07 Cree, Inc. Methods of fabricating nitride-based transistors having regrown ohmic contact regions
US7238560B2 (en) * 2004-07-23 2007-07-03 Cree, Inc. Methods of fabricating nitride-based transistors with a cap layer and a recessed gate
US7704833B2 (en) 2004-08-25 2010-04-27 Intel Corporation Method of forming abrupt source drain metal gate transistors
JP2006190991A (ja) * 2004-12-09 2006-07-20 Matsushita Electric Ind Co Ltd 電界効果トランジスタ及びその製造方法
KR100698829B1 (ko) * 2005-03-11 2007-03-23 한국과학기술원 광 수신기 제조 방법
US20060202266A1 (en) 2005-03-14 2006-09-14 Marko Radosavljevic Field effect transistor with metal source/drain regions
JP2006319122A (ja) 2005-05-12 2006-11-24 Matsushita Electric Ind Co Ltd 化合物半導体装置
US7858481B2 (en) 2005-06-15 2010-12-28 Intel Corporation Method for fabricating transistor with thinned channel
US7547637B2 (en) 2005-06-21 2009-06-16 Intel Corporation Methods for patterning a semiconductor film
US7494858B2 (en) 2005-06-30 2009-02-24 Intel Corporation Transistor with improved tip profile and method of manufacture thereof
US20070018199A1 (en) * 2005-07-20 2007-01-25 Cree, Inc. Nitride-based transistors and fabrication methods with an etch stop layer
US7485503B2 (en) 2005-11-30 2009-02-03 Intel Corporation Dielectric interface for group III-V semiconductor device
US8183556B2 (en) 2005-12-15 2012-05-22 Intel Corporation Extreme high mobility CMOS logic
US7592213B2 (en) 2005-12-29 2009-09-22 Intel Corporation Tensile strained NMOS transistor using group III-N source/drain regions
US20070152266A1 (en) 2005-12-29 2007-07-05 Intel Corporation Method and structure for reducing the external resistance of a three-dimensional transistor through use of epitaxial layers
US7485536B2 (en) 2005-12-30 2009-02-03 Intel Corporation Abrupt junction formation by atomic layer epitaxy of in situ delta doped dopant diffusion barriers
US7566605B2 (en) 2006-03-31 2009-07-28 Intel Corporation Epitaxial silicon germanium for reduced contact resistance in field-effect transistors
US7879739B2 (en) 2006-05-09 2011-02-01 Intel Corporation Thin transition layer between a group III-V substrate and a high-k gate dielectric layer
US7456068B2 (en) 2006-06-08 2008-11-25 Intel Corporation Forming ultra-shallow junctions
US20080001173A1 (en) 2006-06-23 2008-01-03 International Business Machines Corporation BURIED CHANNEL MOSFET USING III-V COMPOUND SEMICONDUCTORS AND HIGH k GATE DIELECTRICS
CN101449366A (zh) * 2006-06-23 2009-06-03 国际商业机器公司 使用ⅲ-ⅴ族化合物半导体及高介电常数栅极电介质的掩埋沟道金属氧化物半导体场效应晶体管
US20080132081A1 (en) 2006-12-04 2008-06-05 Shaheen Mohamad A Thin III-V semiconductor films with high electron mobility
US20080142786A1 (en) 2006-12-13 2008-06-19 Suman Datta Insulated gate for group iii-v devices
EP1936696A1 (en) * 2006-12-22 2008-06-25 INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM vzw (IMEC) A field effect transistor device and methods of production thereof
US9006707B2 (en) 2007-02-28 2015-04-14 Intel Corporation Forming arsenide-based complementary logic on a single substrate
US7713802B2 (en) * 2007-03-12 2010-05-11 Chang Gung University Method of sulfuration treatment for a strained InAlAs/InGaAs metamorphic high electron mobility transistor
US7435987B1 (en) 2007-03-27 2008-10-14 Intel Corporation Forming a type I heterostructure in a group IV semiconductor
US7763317B2 (en) 2007-03-30 2010-07-27 Intel Corporation High K dielectric growth on metal triflate or trifluoroacetate terminated III-V semiconductor surfaces
US8124959B2 (en) 2007-06-28 2012-02-28 Intel Corporation High hole mobility semiconductor device
JP5348364B2 (ja) 2007-08-27 2013-11-20 サンケン電気株式会社 ヘテロ接合型電界効果半導体装置
JP5217301B2 (ja) * 2007-08-28 2013-06-19 富士通株式会社 化合物半導体装置とその製造方法
US8159038B2 (en) * 2008-02-29 2012-04-17 Infineon Technologies Ag Self aligned silicided contacts
US8138041B2 (en) * 2008-06-12 2012-03-20 International Business Machines Corporation In-situ silicon cap for metal gate electrode
US8273649B2 (en) * 2008-11-17 2012-09-25 International Business Machines Corporation Method to prevent surface decomposition of III-V compound semiconductors
US9934976B2 (en) 2008-12-18 2018-04-03 Intel Corporation Methods of forming low interface resistance rare earth metal contacts and structures formed thereby
US8017427B2 (en) * 2008-12-31 2011-09-13 Omnivision Technologies, Inc. Backside-illuminated (BSI) image sensor with backside diffusion doping
US8008977B2 (en) * 2009-04-14 2011-08-30 Triquint Semiconductor, Inc. Field-plated transistor including feedback resistor
TWI451552B (zh) * 2009-11-10 2014-09-01 Taiwan Semiconductor Mfg 積體電路結構

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01264270A (ja) * 1988-04-15 1989-10-20 Hitachi Ltd 半導体装置
JPH06188274A (ja) * 1992-12-17 1994-07-08 Hitachi Ltd ヘテロ接合電界効果トランジスタ
US20010038103A1 (en) * 1997-03-05 2001-11-08 Kabushiki Kaisha Toshiba Light emitting semiconductor device and method for fabricating same
US6316793B1 (en) * 1998-06-12 2001-11-13 Cree, Inc. Nitride based transistors on semi-insulating silicon carbide substrates
US20050199954A1 (en) * 2002-06-07 2005-09-15 Amberwave Systems Corporation Methods for forming strained-semiconductor-on-insulator device structures by mechanically inducing strain
US20060060132A1 (en) * 2002-10-15 2006-03-23 Masahiko Hata Production method for thin-film crystal wafer, semiconductor device using it and production method therefor
US6867078B1 (en) * 2003-11-19 2005-03-15 Freescale Semiconductor, Inc. Method for forming a microwave field effect transistor with high operating voltage
TW200620666A (en) * 2004-11-23 2006-06-16 Cree Inc Cap layers and/or passivation layers for nitride-based transistors, transistor structures and methods of fabricating same

Also Published As

Publication number Publication date
EP2517253B1 (en) 2019-01-23
US20150123171A1 (en) 2015-05-07
WO2011087610A2 (en) 2011-07-21
JP5872478B2 (ja) 2016-03-01
EP2517253A2 (en) 2012-10-31
KR101394136B1 (ko) 2014-05-14
US20110147798A1 (en) 2011-06-23
JP2016195287A (ja) 2016-11-17
US9899505B2 (en) 2018-02-20
KR20120089764A (ko) 2012-08-13
US8936976B2 (en) 2015-01-20
CN102652363A (zh) 2012-08-29
CN102652363B (zh) 2016-08-24
JP6199342B2 (ja) 2017-09-20
WO2011087610A3 (en) 2011-10-20
HK1174439A1 (zh) 2013-06-07
JP6272961B2 (ja) 2018-01-31
JP2013511164A (ja) 2013-03-28
EP2517253A4 (en) 2015-05-20
JP2015207778A (ja) 2015-11-19
TW201131761A (en) 2011-09-16

Similar Documents

Publication Publication Date Title
TWI560876B (en) Conductivity improvements for iii-v semiconductor devices
TWI562330B (en) Semiconductor device
TWI562381B (en) Semiconductor device
EP2519969A4 (en) SEMICONDUCTOR COMPONENT
EP2517245A4 (en) SEMICONDUCTOR COMPONENT
EP2513966A4 (en) SEMICONDUCTOR DEVICE
EP2494599A4 (en) SEMICONDUCTOR DEVICE
SG10201503877UA (en) Semiconductor device
EP2491586A4 (en) SEMICONDUCTOR COMPONENT
EP2494597A4 (en) SEMICONDUCTOR COMPONENT
SG10201406934WA (en) Semiconductor device
EP2491585A4 (en) SEMICONDUCTOR DEVICE
EP2445011A4 (en) SEMICONDUCTOR DEVICE
EP2432014A4 (en) SEMICONDUCTOR COMPONENT
EP2432020A4 (en) SEMICONDUCTOR DEVICE
EP2494595A4 (en) SEMICONDUCTOR DEVICE
EP2469600A4 (en) SEMICONDUCTOR DEVICE
HK1219572A1 (zh) 基於量子阱的半導體器件
EP2442355A4 (en) SEMICONDUCTOR DEVICE
EP2497114A4 (en) SEMICONDUCTOR DEVICE
EP2546882A4 (en) SEMICONDUCTOR DEVICE
EP2562818A4 (en) SEMICONDUCTOR DEVICE
EP2560206A4 (en) SEMICONDUCTOR COMPONENT
EP2541609A4 (en) SEMICONDUCTOR DEVICE
EP2560207A4 (en) SEMICONDUCTOR COMPONENT

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees