TWI556310B - 用於半導體裝置封裝之鈍化層 - Google Patents

用於半導體裝置封裝之鈍化層 Download PDF

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Publication number
TWI556310B
TWI556310B TW101104223A TW101104223A TWI556310B TW I556310 B TWI556310 B TW I556310B TW 101104223 A TW101104223 A TW 101104223A TW 101104223 A TW101104223 A TW 101104223A TW I556310 B TWI556310 B TW I556310B
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Taiwan
Prior art keywords
cleaned
plasma
polymer layer
solder bump
bond pad
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TW101104223A
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English (en)
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TW201241917A (en
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大衛 基汀 弗狄
詹姆士 唐納德 蓋蒂
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能多順股份有限公司
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Publication of TW201241917A publication Critical patent/TW201241917A/zh
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Description

用於半導體裝置封裝之鈍化層
本發明一般而言係關於半導體裝置之製法，及特定言之，係關於自半導體晶片、封裝載體及/或焊料凸塊上的表面消除氧化之方法。
積體電路(亦稱為「IC」或微晶片)為用於目前所建構之實質每一電子裝置中之小型化電子電路。IC係經由成像，沉積，及/或蝕刻至通常藉由矽建構之晶圓上之製程層化不同材料(導體及絕緣體)建構。IC之裝置係藉由前段製程加工形成及後段製程加工係用以形成互連階層及該等互連階層中之被動裝置。
切自晶圓之晶粒通常係安裝在封裝載體(諸如基板、電路板或引線框)上，該封裝載體提供自該晶粒至該封裝載體之外部之電連接。於此一稱為覆晶安裝之封裝配置中，該晶粒包括導電接觸件(稱為接合墊)之陣列，其可經由焊球或凸塊電連接至位於基板(諸如封裝載體)上之對應接合墊之陣列。通常，焊料凸塊係指定給晶粒及/或基板上之接合墊且應用回焊製程在該晶粒與該基板之間建立呈焊接點之形式的電連接。覆晶安裝之製程導致介於該晶粒與該基板之間的空隙或間隙。
該等習知製程之許多製程中，鋁或金已用於形成接合墊。然而，由於與金相關聯之成本及因為銅係相較鋁更好之導體，銅係目前較普遍。此外，因為銅在標準溫度及壓 力下易發生氧化，銅之使用並非係沒有困難處。經氧化之銅之區域因阻擋電流而極大程度上使得電連接之可靠性降低。
因此，仍需求一種改良由半導體裝置中銅表面製成之電連接之可靠性之製法。
本發明之一代表性實施例中，提供一種用於保護半導體裝置之銅層之方法。該層之表面係利用電漿移除氧化層而清潔。採用電漿增強沉積法於該層之該經清潔表面上形成聚合物層以防止該層之該經清潔表面曝露於氧化氣體。
本發明之另一代表性實施例中，提供一種處理具有接合墊之半導體裝置之方法，該接合墊具有由銅組成之表面。該接合墊之表面係利用電漿移除氧化層而清潔。採用電漿增強沉積法於該接合墊之該經清潔表面上形成聚合物層以防止該接合墊之該經清潔表面曝露於氧化氣體。與該接合墊之該經清潔表面形成電連接。
併入並組成本說明書之一部分之該等附圖例示本發明之不同實施例，且連同提供於以下之本發明一般發明說明及提供於以下之實施例之詳細發明說明來說明本發明之實施例。
參照該等圖，及特定言之參照圖1，顯示一電漿處理系統10且包括經由封閉一處理空間14之壁所組成之一處理腔室12。於電漿處理期間，該處理腔室12係自環繞周圍環境 液密密封，抽空至適宜部分真空，然後提供至少一種適用於所計劃之電漿處理之處理氣體。一真空泵16係用以經由一閥式真空口18將該處理腔室12之該處理空間14抽真空。該真空泵16可包括一或多個具有熟習真空技術者所認可之可控泵送速率之真空泵送裝置。
允許一或多種處理氣體以經調節流率自一處理氣體來源20通過一入口氣孔22至該處理空間14。處理氣體自該處理氣體來源20至該處理空間14之流量通常係由質量流量控制器(未顯示)量測。視需要調節自該處理氣體來源20之氣體流率及真空泵16之泵送速率，產生適用於電漿建立及所計劃之處理製程之電漿處理壓力。如此，新處理氣體在電漿存在之情況下係持續供應至該處理空間14且省去自位於一基板支撐結構26上之一基板24移除任何廢處理氣體及/或揮發性物種之步驟。
一電源28係與位於該腔室12內部之電極(本文稱為「天線」30)電耦合並輸送電力至該電極。自該電源28輸送至該天線30之電力係有效用於從侷限在該處理空間14中之處理氣體形成一電漿32。該電源28亦可激勵與該基板支撐結構26相關聯之電極(本文稱為「偏壓電極」34)。自該電源28輸送至該偏壓電極34之電力係有效用於相對該電漿32對該基板24加偏壓繼而促進該基板24之電漿處理。該電源28可為控制直流(DC)偏壓及/或以介於約40 kHz與約13.65 MHz之間之頻率及40 kHz時範圍介於約4000瓦與約8000瓦之間或13.56 MHz時為300瓦至2500瓦之電力位準操作之射 頻(RF)電源之一或多種電源。亦可利用其他適宜之頻率及電力範圍。熟習此項相關技藝者明瞭不同處理腔室設計可允許或需求不同偏壓電力。控制器(未顯示)係耦合至該電漿處理系統10之不同組件以便於控制電漿製程。
該電漿處理系統10可採熟習此項相關技藝者明瞭之不同組態，及因此並不受限於本文所述之例示性組態。例如，該電漿32可於該處理腔室12之遠端產生且遞送至該處理空間14。應進一步理解該電漿處理系統10包括未顯示於圖1中然可為該系統10之操作所必需之組件，諸如位於該處理空間14與該真空泵16之間之閘閥。
圖2A繪示包含具有諸如代表性接合墊42a、42b之一或多個接合墊之一基板40(諸如矽晶粒)之一半導體裝置38。該等接合墊42a、42b或該等接合墊42a、42b之最上層包含在曝露於氧時易氧化之材料(諸如銅)之層。該等接合墊42a、42b之各自表面43a、43b係經曝露以供與該半導體裝置38之積體電路及其他裝置建立電連接。該等接合墊42a、42b之該等表面43a、43b可部分地由一鈍化層44覆蓋。該鈍化層44可包含電絕緣體(諸如聚醯亞胺)。
由於用於建立電連接之該等接合墊42a、42b之該等表面43a、43b在鈍化之後仍保持部分曝露，因而一旦自用以形成層44之環境(未明確顯示，然可能類似於圖1之該電漿處理系統10)移去該半導體裝置38並曝露於大氣條件，該等接合墊42a、42b之該等各自表面43a、43b可經歷起因於曝露之氧化。氧化物46係以層形成於該等接合墊42a、42b 上，且假如不移去，則會干擾線接合或回焊處理且亦可操作而降低裝置可靠性。該氧化物46可包括假若不移去，則會因阻擋電流而降低與該等接合墊42a、42b之電連接之可靠性之經氧化銅之區域。
現參照圖1及2A至2C及根據本發明之實施例，該半導體裝置38係經處理以自該等接合墊42a、42b移除該氧化物46，並防止該等接合墊42a、42b之該等經清潔表面43a、43b再氧化。該製程可用以清潔並保護該半導體裝置38之其他類型銅層。
圖3A為圖示電漿處理該半導體裝置38之製程流程之流程圖48。該半導體裝置38係藉由將該半導體裝置38置於該處理腔室14中之該基板支撐結構26上而載入該電漿處理系統10中(方塊50)。該半導體裝置38之該等接合墊42a、42b組成由示於圖2A中之氧化物46覆蓋之銅層。在載入該半導體裝置38之情況下，以該真空泵16將該腔室12抽真空繼而處理氣體係自該處理氣體來源20引入該處理空間14同時該控制器調節該真空泵16之操作及氣體引入以維持所預期的處理壓力。藉由該電源28提供範圍自約0.02 W/cm2至約0.65 W/cm2之RF電力給該天線30，此舉將該處理空間14內之處理氣體激勵成電漿32。
引發該電漿32的同時，該電源28亦提供DC電力給該偏壓電極34以加偏壓於源自該電漿32之離子之一或多種物種且朝向於該目前偏壓之半導體裝置38。該電漿32係藉由移除該氧化物46清潔該等接合墊42a、42b之該等表面43a、 43b(方塊58)。於一實施例中，該處理氣體可為氬氣(Ar)與氫氣(H2)之混合物，其中Ar係藉由濺射以物理方式蝕刻位於該等表面43a、43b上之該氧化物46及H係以化學方式還原位於該等表面43a、43b上之該氧化物46。該等接合墊42a、42b之該等經清潔表面43a、43b及該氧化層46之缺乏描述於圖2B中。
該腔室12之缺氧環境防止該等經清潔表面43a、43b再氧化同時該裝置10位於該腔室12內部。一聚合物層61(圖4)係形成於該等接合墊42a、42b之該等經清潔表面43a、43b上以防止在裝置10自該腔室12移出且曝露於含有氧之周圍大氣環境時發生再氧化(方塊62)。該聚合物層61亦形成於該鈍化層44上。
對此，調整及/或改變用於電漿之處理氣體流量。例如，可停止引入H2氣體且可引入適以形成該聚合物層61之處理氣體。該處理氣體可為諸如矽氧烷或於一實施例中四甲基二矽氧烷(「TMDSO」)之單體氣體。TMDSO可藉由供應液體TMDSO於以流體方式耦合至該處理空間14之另一個蒸發室(未明確顯示，然包括於該氣體來源20中)中引入。因為TMDSO之蒸氣壓於20℃時為112.5毫托，一旦腔室12內確立適宜之製程壓力，TMDSO可輕易蒸發且以範圍自約1 sccm至約1000 sccm之流率進入該處理空間14。於另一實施例中，如熟習此項相關技藝者所熟知可使用載氣輸送單體蒸氣至該處理空間14且視為與本發明之實施例一致。由於TMDSO之引入，該腔室12中之製程壓力可維持 在約20毫托至約200毫托之範圍。
電漿32中之TMDSO在該半導體裝置38之該等表面43a、43b上形成該聚合物層61。隨著該聚合物層61之沉積完成(膜厚度範圍自約10 nm至約500 nm)，停止引入處理氣體，電漿處理終止，然後自該電漿處理系統10移出該半導體裝置38(方塊64)。選擇包括該聚合物層61之材料之厚度及/或組成以減少及較佳作為障壁功能以防止氧化氣體(諸如氧氣)自周圍大氣環境擴散至該等經清潔表面43a、43b。隨著該等接合墊42a、42b之該等各別曝露表面43a、43b現已清潔且不含氧化銅以及藉由該聚合物層61鈍化，可發生接合而無經氧化之銅所致之干擾，但限制條件為防止該等經清潔表面43a、43b再氧化。覆蓋該等接合墊42a、42b之該等經清潔表面43a、43b之該聚合物層61在圖2C中很明顯。
現回至圖4，且繼續參照圖3A，一潤濕劑70可在另一處理步驟之製備中沉積至該聚合物層61之表面上(方塊66)。然而，該聚合物層61之表面之接觸角可能太大而令特定潤濕劑層無法均勻沉積至該半導體裝置38上。因此，假若需求諸如焊劑之潤濕劑(「是」方塊66之分支)，則該聚合物層61之該表面可經改質以減小該接觸角(至約80°至約90°範圍)且製造供該潤濕劑70用之表面。然並未明確顯示，該改質可藉由其中該聚合物層之該表面發生氧化之電漿增強法進行。根據一實施例，再調整及/或改變處理氣體流量。明確言之，處理氣體流量之調整或改變可包括中止引 入TMDSO單體，及引入氧氣(O2)以達形成電漿至少部分氧化該聚合物層61之曝露表面及減小接觸角而不移除該聚合物層61或導致該等表面43a、43b曝露之目的。該潤濕劑70然後可沉積至該聚合物層61之該表面上(方塊68)。該潤濕劑70可藉由諸如述於2008年10月28日頒予且標題「可再充電之施配頭(Rechargeable Dispensing Head)」美國專利案第7,441,568號者之液體施配單元沉積，該案之揭示內容全文係以引用的方式併入本文中。假若不需要或需求該潤濕劑70，則該製程可在不進行沉積步驟下繼續(「否」方塊66之分支)。
該半導體裝置38然後已就緒可用於接著製程，一如所期，此等提供延伸穿過該聚合物層61至該等經清潔表面43a、43b之電連接。相應地，確定接著製程之類型(方塊72，圖3A)。為達僅僅例示之目的，搭配圖5A及5B(圖3A中方塊72之「A」分支)說明並顯示接著製程之覆晶類型。覆晶接著製程包括(但不限於)熱壓接合製程或熱接合製程。於任一事件中，如所示，攜有焊料凸塊76a、76b之模型盤(未顯示)係分別與該等接合墊42a、42b對準。該等焊料凸塊76a、76b係指定給該等接合墊42a、42b且一如圖5A所示前進至該半導體裝置38上。在足夠的壓力及視潤濕劑組成而定然通常為約200℃至約300℃之溫度下，該潤濕劑70該等接合墊42a、42b之區域處耗散，該聚合物層61分解，及如圖5B所示，該等焊料凸塊76a、76b回焊接觸該等各別接合墊42a、42b(方塊74)。由於不存在該層，介於該 等焊料凸塊76a、76b及該等接合墊42a、42b之間之電連接之可靠性大大增強。
或者，可進行不依賴於焊料凸塊76a、76b之使用之線接合製程(圖3A中方塊72之「B」分支)。儘管無明確標示，然可以熟習此項相關技藝者通常已知之方式及與以上描述一致之方式將線接合至該等接合墊42a、42b(方塊80，圖3A)。明確言之，配合該軟焊或熔接製程之熱及壓力致使該聚合物層61於接觸件形成之區域之處發生分解。
於一些實施例中，該等含量凸塊76a、76b可由銅或銅合金組成。因此，該等焊料凸塊76a、76b之該等曝露表面77a、77b可以與以上所述之該等接合墊42a、42b(圖2A)之氧化類似之方式氧化。因此，圖5B之該半導體裝置38可經電漿處理以移除氧化物且以與本發明之一或多個實施例一致之方式施用聚合物層。例如，該半導體裝置38可載入該電漿處理系統10(圖1)中且經電漿處理以移除該氧化物並清潔該等焊料凸塊76a、76b之該等表面77a、77b，繼而如圖5C所示在該等焊料凸塊76a、76b之該等表面77a、77b上沉積一第二聚合層82。該第二聚合物層82防止該等焊料凸塊76a、76b之該等各別表面77a、77b在自該電漿處理系統10移出之後再氧化且保持該等焊料凸塊76a、76b完整直到需要進一步處理為止。
儘管該代表性實施例係有關於一種在如該半導體裝置38進行前段製程及後段製程加工之後之晶粒，但該清潔及鈍化製程可用以清潔及鈍化與接合墊42a、42b不同構造之銅 層或銅接合墊或用以清潔及鈍化位於與例示於圖2A至C中之該半導體裝置38不同類型之半導體裝置上之銅層或銅接合墊。
該構成半導體裝置38之晶粒通常係與諸如引線框架或球狀柵格陣列(BGA)之基板接合，其亦可具有位於與該晶粒之該等接合墊42a、42b互補之結合墊上的銅層。本文所述之用於裝置38之該清潔及鈍化製程亦可用以清潔及鈍化位於基板上之銅層或銅接合墊。或者，如本文針對裝置38所述可僅清潔及鈍化位於該基板上之該等銅層或銅接合墊。
該等焊料凸塊76a、76b可僅施用至位於晶粒上之銅層或接合墊、可僅施用至位於基板上之銅層或接合墊、或可同時施用至位於晶粒上之銅層或接合墊與位於基板上之銅層或接合墊。於各實例中，該等焊料凸塊76a、76b可在如本文所述施用至晶粒及/或基板之後進行清潔及鈍化。
作為構造變化之實例及參照圖6A，該等接合墊42a、42b可成型成具有如本文所述經清潔之表面43a、43b之柱狀物。充作接合墊42a、42b之該等經清潔柱狀物可同樣如本文所述經聚合物層61塗布。該等經清潔及鈍化之接合墊42a、42b可用以形成其中該互補半導體裝置(例如，引線框架)攜有焊料凸塊之總成。或者，可如圖6B所示將焊料凸塊76a、76b施用至該等經清潔及鈍化之接合墊42a、42b。該等焊料凸塊76a、76b之該等表面77a、77b可同樣如本文所述及圖6C所示進行清潔及鈍化。
本文所用術語之目的僅在於描述特定實施例及用意不在 限制本發明。如本文所用，除非本文清楚地另作指明，否則單數形式的「一」、「一個」及「該」亦意欲包括複數形式。應進一步明瞭在用於本說明書之情況下，術語「包括」及/或「包含」限定存有規定特徵部、整數、步驟、操作、元件及/或組件，然不排除存有或增加一或多種其他特徵部、整數、步驟、操作、元件、組件及/或其群組。此外，在術語「包括」、「含有」、「具有(has)」、「具有(with)」、「由...組成」或其變化項用於詳細發明說明或請求項中任一者之程度上，該等術語欲與該術語「包含」類似之方式包括。
應明瞭在元件述為係「連接」或「耦合」至另一元件或與另一元件「連接」或「耦合」之情況下，其可直接連接或耦合至其他元件，或代之，可存有一或多個介入元件。相比之下，在元件述為係「直接連接」或「直接耦合」至另一元件之情況下，不存有介入元件。在元件述為係「間接連接」或「間接耦合」至另一元件之情況下，存有至少一種介入元件。
以實例方式然非限制方式於本文中引用諸如「立式」、「水平」等之術語以建立參考框架。應明瞭可在不脫離本發明之精神及範圍下採用多種其他參考框架。
儘管本發明已藉由描述各種不同實施例例示說明且儘管該等實施例已以極詳細之方式描述，然本申請人之目的並非係約束或以任何方式限制該等附屬請求項於該細節。熟習此項相關技藝者可輕易明瞭其他優點及修改。因此，本 發明的較廣泛態樣方式因而並不受限於特定細節、代表性裝置及方法，及所提供及所描述之例示性實例。
10‧‧‧電漿處理系統
12‧‧‧處理腔室
14‧‧‧處理空間
16‧‧‧真空泵
18‧‧‧閥式真空口
20‧‧‧處理氣體來源
22‧‧‧入口氣孔
24‧‧‧基板
26‧‧‧基板支撐結構
28‧‧‧電源
30‧‧‧天線
32‧‧‧電漿
34‧‧‧偏壓電機
38‧‧‧半導體裝置
40‧‧‧基板
42a‧‧‧接合墊
42b‧‧‧接合墊
43a‧‧‧接合墊42a之表面
43b‧‧‧接合墊42b之表面
44‧‧‧鈍化層
46‧‧‧氧化物
61‧‧‧聚合物層
70‧‧‧潤濕劑
76a‧‧‧焊料凸塊
76b‧‧‧焊料凸塊
77a‧‧‧曝露表面
77b‧‧‧曝露表面
82‧‧‧第二聚合物層
圖1為依據本發明之原理用於電漿處理半導體裝置之電漿處理系統之簡圖。
圖2A、2B及2C為圖示依據本發明實施例用於電漿處理半導體裝置之製程流程之簡圖。
圖3A為圖示依據本發明實施例電漿處理半導體裝置且利用經電漿處理之半導體裝置建立電連接之流程圖。
圖4為其上沉積具有潤濕劑層之圖2C之該經電漿處理之半導體裝置之簡圖。
圖5A及5B為半導體裝置經歷回焊製程之簡圖。
圖5C為半導體裝置於利用依據本發明實施例鈍化之以銅為主之焊料凸塊進行圖5B之回焊製程之後之簡圖。
圖6A至C為與圖2A至C類似圖示具有依據本發明實施例清潔及鈍化之不同類型銅層之半導體裝置之簡圖。
10‧‧‧電漿處理系統
12‧‧‧處理腔室
14‧‧‧處理空間
16‧‧‧真空泵
18‧‧‧閥式真空口
20‧‧‧處理氣體來源
22‧‧‧入口氣孔
24‧‧‧基板
26‧‧‧基板支撐結構
28‧‧‧電源
30‧‧‧天線
32‧‧‧電漿
34‧‧‧偏壓電極

Claims (9)

  1. 一種處理具有接合墊的半導體裝置之方法，該接合墊具有由銅組成之表面，該方法包括：經由利用電漿移除銅之氧化層而清潔該接合墊之表面；在該方法中待進行之下一步驟前使該接合墊之該經清潔表面保持於缺氧環境中，以防止該經清潔表面氧化；採用電漿增強沉積法於該接合墊之該經清潔表面上形成聚合物層，以保護該接合墊之該經清潔表面防止曝露於氧化氣體；黏著含銅之焊料凸塊於該接合墊上以與該接合墊之該經清潔表面形成電連接；經由電漿移除氧化層以清潔該焊料凸塊之外部表面；在該方法中待進行之下一步驟前使該焊料凸塊之該經清潔外部表面保持於缺氧環境中，以防止該經清潔表面氧化；及使用電漿增強沉積法於該焊料凸塊之經清潔外部表面上形成聚合物層，以保護該焊料凸塊之該經清潔外部表面防止曝露於氧化氣體。
  2. 如請求項1之方法，其中該聚合物層係以電漿增強沉積法使用矽氧烷單體形成。
  3. 如請求項2之方法，其中該矽氧烷單體為四甲基二矽氧烷。
  4. 如請求項2之方法，其中該矽氧烷單體係以範圍自約1 sccm至約1000sccm之流率供應，且該電漿增強沉積之製程壓力係在約20毫托至約200毫托範圍內。
  5. 如請求項1之方法，其中該聚合物層係以電漿增強沉積法使用矽氧烷單體形成於該焊料凸塊之該經清潔外部表面上。
  6. 如請求項5之方法，其中該矽氧烷單體為四甲基二矽氧烷。
  7. 如請求項5之方法，其中該矽氧烷單體係以範圍自約1sccm至約1000sccm之流率供應，且該電漿增強沉積之製程壓力係在約20毫托至約200毫托範圍內。
  8. 如請求項1之方法，其中該電連接穿過該聚合物層延伸至該接合墊之該經清潔表面。
  9. 如請求項1之方法，其進一步包括：在該焊料凸塊之該經清潔外部表面經清潔之後及在該聚合物層形成於該焊料凸塊之該經清潔外部表面之前，使該焊料凸塊之該經清潔外部表面保持於缺氧環境中以防止該經清潔表面氧化。
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