TWI551386B - 移除材料及轉印圖案的方法及系統 - Google Patents
移除材料及轉印圖案的方法及系統 Download PDFInfo
- Publication number
- TWI551386B TWI551386B TW100103075A TW100103075A TWI551386B TW I551386 B TWI551386 B TW I551386B TW 100103075 A TW100103075 A TW 100103075A TW 100103075 A TW100103075 A TW 100103075A TW I551386 B TWI551386 B TW I551386B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- vuv
- vacuum ultraviolet
- radiation
- radiation source
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 81
- 239000000463 material Substances 0.000 title claims description 43
- 238000012546 transfer Methods 0.000 title description 8
- 239000000758 substrate Substances 0.000 claims description 131
- 230000005855 radiation Effects 0.000 claims description 56
- 239000007789 gas Substances 0.000 claims description 35
- 239000000203 mixture Substances 0.000 claims description 33
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 27
- 239000001301 oxygen Substances 0.000 claims description 27
- 229910052760 oxygen Inorganic materials 0.000 claims description 27
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 18
- 238000012545 processing Methods 0.000 claims description 14
- 239000012530 fluid Substances 0.000 claims description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- 238000010923 batch production Methods 0.000 claims description 6
- 230000003595 spectral effect Effects 0.000 claims description 6
- 238000004891 communication Methods 0.000 claims description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical group [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical group [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 87
- 206010073306 Exposure to radiation Diseases 0.000 description 15
- 238000004630 atomic force microscopy Methods 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 238000005530 etching Methods 0.000 description 11
- 238000001459 lithography Methods 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000004049 embossing Methods 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- HKVFISRIUUGTIB-UHFFFAOYSA-O azanium;cerium;nitrate Chemical compound [NH4+].[Ce].[O-][N+]([O-])=O HKVFISRIUUGTIB-UHFFFAOYSA-O 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000012620 biological material Substances 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000203 droplet dispensing Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 229910052902 vermiculite Inorganic materials 0.000 description 1
- 239000010455 vermiculite Substances 0.000 description 1
- 235000019354 vermiculite Nutrition 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US29873410P | 2010-01-27 | 2010-01-27 | |
| US29909710P | 2010-01-28 | 2010-01-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201139032A TW201139032A (en) | 2011-11-16 |
| TWI551386B true TWI551386B (zh) | 2016-10-01 |
Family
ID=44309278
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100103075A TWI551386B (zh) | 2010-01-27 | 2011-01-27 | 移除材料及轉印圖案的方法及系統 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8980751B2 (enExample) |
| JP (1) | JP5782460B2 (enExample) |
| KR (1) | KR101947524B1 (enExample) |
| CN (1) | CN102859436B (enExample) |
| SG (1) | SG181560A1 (enExample) |
| TW (1) | TWI551386B (enExample) |
| WO (1) | WO2011094383A2 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110048518A1 (en) * | 2009-08-26 | 2011-03-03 | Molecular Imprints, Inc. | Nanostructured thin film inorganic solar cells |
| US9070803B2 (en) | 2010-05-11 | 2015-06-30 | Molecular Imprints, Inc. | Nanostructured solar cell |
| JP5634313B2 (ja) * | 2011-03-29 | 2014-12-03 | 富士フイルム株式会社 | レジストパターン形成方法およびそれを用いたパターン化基板の製造方法 |
| US9616614B2 (en) | 2012-02-22 | 2017-04-11 | Canon Nanotechnologies, Inc. | Large area imprint lithography |
| US11762284B2 (en) | 2016-08-03 | 2023-09-19 | Board Of Regents, The University Of Texas System | Wafer-scale programmable films for semiconductor planarization and for imprint lithography |
| DE102019214074A1 (de) * | 2019-09-16 | 2021-03-18 | Robert Bosch Gmbh | Verfahren und Vorrichtung zum lokalen Entfernen und/oder Modifizieren eines Polymermaterials auf einer Oberfläche |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0510503A2 (de) * | 1991-04-25 | 1992-10-28 | Heraeus Noblelight GmbH | Verfahren zur Behandlung von Oberflächen |
| US20030215751A1 (en) * | 2002-05-20 | 2003-11-20 | Ushio Denki Kabushiki Kaisya | Method of removing resist using functional water and device therefor |
| TWI244136B (en) * | 2004-08-17 | 2005-11-21 | Taiwan Semiconductor Mfg | Low oxygen content photoresist stripping process for low dielectric constant materials |
| US20080302400A1 (en) * | 2007-06-05 | 2008-12-11 | Thomas Johnston | System and Method for Removal of Materials from an Article |
| CN101490621A (zh) * | 2006-11-21 | 2009-07-22 | 第一毛织株式会社 | 用于加工抗蚀剂下层膜的硬掩模组合物、使用该硬掩模组合物来生产半导体集成电路器件的方法、以及通过该方法生产的半导体集成电路器件 |
| TWI313788B (en) * | 2005-06-10 | 2009-08-21 | Obducat Ab | Pattern replication with intermediate stamp |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09123206A (ja) | 1995-10-30 | 1997-05-13 | Towa Kk | 電子部品の樹脂封止成形装置 |
| JP4045682B2 (ja) | 1999-01-26 | 2008-02-13 | 株式会社日立ハイテクノロジーズ | 紫外線照射による基板処理装置 |
| US6873087B1 (en) | 1999-10-29 | 2005-03-29 | Board Of Regents, The University Of Texas System | High precision orientation alignment and gap control stages for imprint lithography processes |
| DE19957034B4 (de) | 1999-11-26 | 2006-04-13 | Heraeus Noblelight Gmbh | Verfahren zur Behandlung von Oberflächen von Substraten und Vorrichtung |
| US20030155657A1 (en) * | 2002-02-14 | 2003-08-21 | Nec Electronics Corporation | Manufacturing method of semiconductor device |
| US7077992B2 (en) | 2002-07-11 | 2006-07-18 | Molecular Imprints, Inc. | Step and repeat imprint lithography processes |
| US6932934B2 (en) | 2002-07-11 | 2005-08-23 | Molecular Imprints, Inc. | Formation of discontinuous films during an imprint lithography process |
| US6936194B2 (en) | 2002-09-05 | 2005-08-30 | Molecular Imprints, Inc. | Functional patterning material for imprint lithography processes |
| US20040108059A1 (en) * | 2002-09-20 | 2004-06-10 | Thomas Johnston | System and method for removal of materials from an article |
| US20040065252A1 (en) | 2002-10-04 | 2004-04-08 | Sreenivasan Sidlgata V. | Method of forming a layer on a substrate to facilitate fabrication of metrology standards |
| US8349241B2 (en) | 2002-10-04 | 2013-01-08 | Molecular Imprints, Inc. | Method to arrange features on a substrate to replicate features having minimal dimensional variability |
| US7179396B2 (en) | 2003-03-25 | 2007-02-20 | Molecular Imprints, Inc. | Positive tone bi-layer imprint lithography method |
| US7396475B2 (en) | 2003-04-25 | 2008-07-08 | Molecular Imprints, Inc. | Method of forming stepped structures employing imprint lithography |
| US7157036B2 (en) | 2003-06-17 | 2007-01-02 | Molecular Imprints, Inc | Method to reduce adhesion between a conformable region and a pattern of a mold |
| DE10343323A1 (de) | 2003-09-11 | 2005-04-07 | Carl Zeiss Smt Ag | Stempellithografieverfahren sowie Vorrichtung und Stempel für die Stempellithografie |
| US8076386B2 (en) | 2004-02-23 | 2011-12-13 | Molecular Imprints, Inc. | Materials for imprint lithography |
| JP5115798B2 (ja) * | 2004-09-01 | 2013-01-09 | アクセリス テクノロジーズ インコーポレーテッド | フォトレジストの除去速度を増加する装置及びプラズマアッシング方法 |
| US20070138405A1 (en) * | 2005-12-16 | 2007-06-21 | 3M Innovative Properties Company | Corona etching |
| JP2008091685A (ja) | 2006-10-03 | 2008-04-17 | Seiko Epson Corp | 素子基板およびその製造方法 |
| US7832416B2 (en) | 2006-10-10 | 2010-11-16 | Hewlett-Packard Development Company, L.P. | Imprint lithography apparatus and methods |
| US8337959B2 (en) | 2006-11-28 | 2012-12-25 | Nanonex Corporation | Method and apparatus to apply surface release coating for imprint mold |
| JP2009034926A (ja) | 2007-08-02 | 2009-02-19 | Sumitomo Electric Ind Ltd | 樹脂パターン形成方法 |
| US20090166317A1 (en) * | 2007-12-26 | 2009-07-02 | Canon Kabushiki Kaisha | Method of processing substrate by imprinting |
| JP5149083B2 (ja) | 2008-06-16 | 2013-02-20 | 富士フイルム株式会社 | パターン形成方法、並びに基板加工方法、モールド構造体の複製方法、及びモールド構造体 |
| US8394203B2 (en) | 2008-10-02 | 2013-03-12 | Molecular Imprints, Inc. | In-situ cleaning of an imprint lithography tool |
-
2011
- 2011-01-26 US US13/014,508 patent/US8980751B2/en active Active
- 2011-01-27 TW TW100103075A patent/TWI551386B/zh active
- 2011-01-27 WO PCT/US2011/022679 patent/WO2011094383A2/en not_active Ceased
- 2011-01-27 SG SG2012041901A patent/SG181560A1/en unknown
- 2011-01-27 JP JP2012551279A patent/JP5782460B2/ja active Active
- 2011-01-27 CN CN201180007625.5A patent/CN102859436B/zh active Active
- 2011-01-27 KR KR1020127021126A patent/KR101947524B1/ko active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0510503A2 (de) * | 1991-04-25 | 1992-10-28 | Heraeus Noblelight GmbH | Verfahren zur Behandlung von Oberflächen |
| US20030215751A1 (en) * | 2002-05-20 | 2003-11-20 | Ushio Denki Kabushiki Kaisya | Method of removing resist using functional water and device therefor |
| TWI244136B (en) * | 2004-08-17 | 2005-11-21 | Taiwan Semiconductor Mfg | Low oxygen content photoresist stripping process for low dielectric constant materials |
| TWI313788B (en) * | 2005-06-10 | 2009-08-21 | Obducat Ab | Pattern replication with intermediate stamp |
| CN101490621A (zh) * | 2006-11-21 | 2009-07-22 | 第一毛织株式会社 | 用于加工抗蚀剂下层膜的硬掩模组合物、使用该硬掩模组合物来生产半导体集成电路器件的方法、以及通过该方法生产的半导体集成电路器件 |
| US20080302400A1 (en) * | 2007-06-05 | 2008-12-11 | Thomas Johnston | System and Method for Removal of Materials from an Article |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2011094383A2 (en) | 2011-08-04 |
| US20110183521A1 (en) | 2011-07-28 |
| CN102859436B (zh) | 2015-07-15 |
| KR101947524B1 (ko) | 2019-02-13 |
| JP5782460B2 (ja) | 2015-09-24 |
| WO2011094383A3 (en) | 2011-09-29 |
| JP2013518446A (ja) | 2013-05-20 |
| SG181560A1 (en) | 2012-07-30 |
| US8980751B2 (en) | 2015-03-17 |
| TW201139032A (en) | 2011-11-16 |
| KR20120125297A (ko) | 2012-11-14 |
| CN102859436A (zh) | 2013-01-02 |
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