JP5782460B2 - 材料除去及びパターン転写の方法及びシステム - Google Patents

材料除去及びパターン転写の方法及びシステム Download PDF

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JP5782460B2
JP5782460B2 JP2012551279A JP2012551279A JP5782460B2 JP 5782460 B2 JP5782460 B2 JP 5782460B2 JP 2012551279 A JP2012551279 A JP 2012551279A JP 2012551279 A JP2012551279 A JP 2012551279A JP 5782460 B2 JP5782460 B2 JP 5782460B2
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substrate
vuv
pattern
hard mask
layer
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Japanese (ja)
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JP2013518446A5 (enExample
JP2013518446A (ja
Inventor
シュミッド，ジェラルド，エム
ミラー，マイケル，エヌ
チョイ，ビュン−ジン
レスニック，ダグラス，ジェイ
スリーニヴァサン，シドルガータ，ブイ
シュ，フランク，ワイ
ドナルドソン，ダレン，ディ
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モレキュラー・インプリンツ・インコーポレーテッド
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/002—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor using materials containing microcapsules; Preparing or processing such materials, e.g. by pressure; Devices or apparatus specially designed therefor
    • G03F7/0022—Devices or apparatus
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
JP2012551279A 2010-01-27 2011-01-27 材料除去及びパターン転写の方法及びシステム Active JP5782460B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US29873410P 2010-01-27 2010-01-27
US61/298,734 2010-01-27
US29909710P 2010-01-28 2010-01-28
US61/299,097 2010-01-28
US13/014,508 US8980751B2 (en) 2010-01-27 2011-01-26 Methods and systems of material removal and pattern transfer
US13/014,508 2011-01-26
PCT/US2011/022679 WO2011094383A2 (en) 2010-01-27 2011-01-27 Methods and systems of material removal and pattern transfer

Publications (3)

Publication Number Publication Date
JP2013518446A JP2013518446A (ja) 2013-05-20
JP2013518446A5 JP2013518446A5 (enExample) 2014-02-20
JP5782460B2 true JP5782460B2 (ja) 2015-09-24

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JP2012551279A Active JP5782460B2 (ja) 2010-01-27 2011-01-27 材料除去及びパターン転写の方法及びシステム

Country Status (7)

Country Link
US (1) US8980751B2 (enExample)
JP (1) JP5782460B2 (enExample)
KR (1) KR101947524B1 (enExample)
CN (1) CN102859436B (enExample)
SG (1) SG181560A1 (enExample)
TW (1) TWI551386B (enExample)
WO (1) WO2011094383A2 (enExample)

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US20110048518A1 (en) * 2009-08-26 2011-03-03 Molecular Imprints, Inc. Nanostructured thin film inorganic solar cells
US9070803B2 (en) 2010-05-11 2015-06-30 Molecular Imprints, Inc. Nanostructured solar cell
JP5634313B2 (ja) * 2011-03-29 2014-12-03 富士フイルム株式会社 レジストパターン形成方法およびそれを用いたパターン化基板の製造方法
US9616614B2 (en) 2012-02-22 2017-04-11 Canon Nanotechnologies, Inc. Large area imprint lithography
US11762284B2 (en) 2016-08-03 2023-09-19 Board Of Regents, The University Of Texas System Wafer-scale programmable films for semiconductor planarization and for imprint lithography
DE102019214074A1 (de) * 2019-09-16 2021-03-18 Robert Bosch Gmbh Verfahren und Vorrichtung zum lokalen Entfernen und/oder Modifizieren eines Polymermaterials auf einer Oberfläche

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DE4113523A1 (de) 1991-04-25 1992-10-29 Abb Patent Gmbh Verfahren zur behandlung von oberflaechen
JPH09123206A (ja) 1995-10-30 1997-05-13 Towa Kk 電子部品の樹脂封止成形装置
JP4045682B2 (ja) 1999-01-26 2008-02-13 株式会社日立ハイテクノロジーズ 紫外線照射による基板処理装置
US6873087B1 (en) 1999-10-29 2005-03-29 Board Of Regents, The University Of Texas System High precision orientation alignment and gap control stages for imprint lithography processes
DE19957034B4 (de) 1999-11-26 2006-04-13 Heraeus Noblelight Gmbh Verfahren zur Behandlung von Oberflächen von Substraten und Vorrichtung
US20030155657A1 (en) * 2002-02-14 2003-08-21 Nec Electronics Corporation Manufacturing method of semiconductor device
JP2003337432A (ja) 2002-05-20 2003-11-28 Tsukuba Semi Technology:Kk 機能水を使ったレジスト除去方法、およびその装置
US7077992B2 (en) 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US6932934B2 (en) 2002-07-11 2005-08-23 Molecular Imprints, Inc. Formation of discontinuous films during an imprint lithography process
US6936194B2 (en) 2002-09-05 2005-08-30 Molecular Imprints, Inc. Functional patterning material for imprint lithography processes
US20040108059A1 (en) * 2002-09-20 2004-06-10 Thomas Johnston System and method for removal of materials from an article
US20040065252A1 (en) 2002-10-04 2004-04-08 Sreenivasan Sidlgata V. Method of forming a layer on a substrate to facilitate fabrication of metrology standards
US8349241B2 (en) 2002-10-04 2013-01-08 Molecular Imprints, Inc. Method to arrange features on a substrate to replicate features having minimal dimensional variability
US7179396B2 (en) 2003-03-25 2007-02-20 Molecular Imprints, Inc. Positive tone bi-layer imprint lithography method
US7396475B2 (en) 2003-04-25 2008-07-08 Molecular Imprints, Inc. Method of forming stepped structures employing imprint lithography
US7157036B2 (en) 2003-06-17 2007-01-02 Molecular Imprints, Inc Method to reduce adhesion between a conformable region and a pattern of a mold
DE10343323A1 (de) 2003-09-11 2005-04-07 Carl Zeiss Smt Ag Stempellithografieverfahren sowie Vorrichtung und Stempel für die Stempellithografie
US8076386B2 (en) 2004-02-23 2011-12-13 Molecular Imprints, Inc. Materials for imprint lithography
US7029992B2 (en) * 2004-08-17 2006-04-18 Taiwan Semiconductor Manufacturing Company Low oxygen content photoresist stripping process for low dielectric constant materials
JP5115798B2 (ja) * 2004-09-01 2013-01-09 アクセリス テクノロジーズ インコーポレーテッド フォトレジストの除去速度を増加する装置及びプラズマアッシング方法
KR101229100B1 (ko) * 2005-06-10 2013-02-15 오브듀캇 아베 중간 스탬프를 갖는 패턴 복제
US20070138405A1 (en) * 2005-12-16 2007-06-21 3M Innovative Properties Company Corona etching
JP2008091685A (ja) 2006-10-03 2008-04-17 Seiko Epson Corp 素子基板およびその製造方法
US7832416B2 (en) 2006-10-10 2010-11-16 Hewlett-Packard Development Company, L.P. Imprint lithography apparatus and methods
KR100796047B1 (ko) * 2006-11-21 2008-01-21 제일모직주식회사 레지스트 하층막용 하드마스크 조성물, 이를 이용한 반도체집적회로 디바이스의 제조방법 및 그로부터 제조된 반도체집적회로 디바이스
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US20090166317A1 (en) * 2007-12-26 2009-07-02 Canon Kabushiki Kaisha Method of processing substrate by imprinting
JP5149083B2 (ja) 2008-06-16 2013-02-20 富士フイルム株式会社 パターン形成方法、並びに基板加工方法、モールド構造体の複製方法、及びモールド構造体
US8394203B2 (en) 2008-10-02 2013-03-12 Molecular Imprints, Inc. In-situ cleaning of an imprint lithography tool

Also Published As

Publication number Publication date
TWI551386B (zh) 2016-10-01
WO2011094383A2 (en) 2011-08-04
US20110183521A1 (en) 2011-07-28
CN102859436B (zh) 2015-07-15
KR101947524B1 (ko) 2019-02-13
WO2011094383A3 (en) 2011-09-29
JP2013518446A (ja) 2013-05-20
SG181560A1 (en) 2012-07-30
US8980751B2 (en) 2015-03-17
TW201139032A (en) 2011-11-16
KR20120125297A (ko) 2012-11-14
CN102859436A (zh) 2013-01-02

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