KR101947524B1 - 재료 제거 및 패턴 전사를 위한 방법 및 시스템 - Google Patents

재료 제거 및 패턴 전사를 위한 방법 및 시스템 Download PDF

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KR101947524B1
KR101947524B1 KR1020127021126A KR20127021126A KR101947524B1 KR 101947524 B1 KR101947524 B1 KR 101947524B1 KR 1020127021126 A KR1020127021126 A KR 1020127021126A KR 20127021126 A KR20127021126 A KR 20127021126A KR 101947524 B1 KR101947524 B1 KR 101947524B1
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substrate
vuv
layer
delete delete
radiation
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KR20120125297A (ko
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제라드 엠. 슈미드
마이클 엔. 밀러
병진 최
다글라스 제이. 레스닉
시들가타 브이. 스리니바산
프랭크 와이. 쑤
다렌 디. 도날드슨
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캐논 나노테크놀로지즈 인코퍼레이티드
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
KR1020127021126A 2010-01-27 2011-01-27 재료 제거 및 패턴 전사를 위한 방법 및 시스템 Active KR101947524B1 (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US29873410P 2010-01-27 2010-01-27
US61/298,734 2010-01-27
US29909710P 2010-01-28 2010-01-28
US61/299,097 2010-01-28
US13/014,508 US8980751B2 (en) 2010-01-27 2011-01-26 Methods and systems of material removal and pattern transfer
US13/014,508 2011-01-26
PCT/US2011/022679 WO2011094383A2 (en) 2010-01-27 2011-01-27 Methods and systems of material removal and pattern transfer

Publications (2)

Publication Number Publication Date
KR20120125297A KR20120125297A (ko) 2012-11-14
KR101947524B1 true KR101947524B1 (ko) 2019-02-13

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Country Status (7)

Country Link
US (1) US8980751B2 (enExample)
JP (1) JP5782460B2 (enExample)
KR (1) KR101947524B1 (enExample)
CN (1) CN102859436B (enExample)
SG (1) SG181560A1 (enExample)
TW (1) TWI551386B (enExample)
WO (1) WO2011094383A2 (enExample)

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US20110048518A1 (en) * 2009-08-26 2011-03-03 Molecular Imprints, Inc. Nanostructured thin film inorganic solar cells
WO2011143327A2 (en) 2010-05-11 2011-11-17 Molecular Imprints, Inc. Nanostructured solar cell
JP5634313B2 (ja) * 2011-03-29 2014-12-03 富士フイルム株式会社 レジストパターン形成方法およびそれを用いたパターン化基板の製造方法
US9616614B2 (en) 2012-02-22 2017-04-11 Canon Nanotechnologies, Inc. Large area imprint lithography
WO2018027069A1 (en) * 2016-08-03 2018-02-08 Board Of Regents, The University Of Texas System Roll-to-roll programmable film imprint lithography
DE102019214074A1 (de) * 2019-09-16 2021-03-18 Robert Bosch Gmbh Verfahren und Vorrichtung zum lokalen Entfernen und/oder Modifizieren eines Polymermaterials auf einer Oberfläche

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JP2000216128A (ja) * 1999-01-26 2000-08-04 Hitachi Electronics Eng Co Ltd 紫外線照射による基板処理装置
US20060046470A1 (en) 2004-09-01 2006-03-02 Becknell Alan F Apparatus and plasma ashing process for increasing photoresist removal rate
US20060141778A1 (en) 2002-02-14 2006-06-29 Nec Electronics Corporation Manufacturing method of semiconductor device
US20070138405A1 (en) 2005-12-16 2007-06-21 3M Innovative Properties Company Corona etching
JP2008091685A (ja) * 2006-10-03 2008-04-17 Seiko Epson Corp 素子基板およびその製造方法
JP2009034926A (ja) * 2007-08-02 2009-02-19 Sumitomo Electric Ind Ltd 樹脂パターン形成方法
JP2009298068A (ja) * 2008-06-16 2009-12-24 Fujifilm Corp パターン形成方法、並びに基板加工方法、モールド構造体の複製方法、及びモールド構造体

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DE4113523A1 (de) 1991-04-25 1992-10-29 Abb Patent Gmbh Verfahren zur behandlung von oberflaechen
JPH09123206A (ja) 1995-10-30 1997-05-13 Towa Kk 電子部品の樹脂封止成形装置
US6873087B1 (en) 1999-10-29 2005-03-29 Board Of Regents, The University Of Texas System High precision orientation alignment and gap control stages for imprint lithography processes
DE19957034B4 (de) 1999-11-26 2006-04-13 Heraeus Noblelight Gmbh Verfahren zur Behandlung von Oberflächen von Substraten und Vorrichtung
JP2003337432A (ja) 2002-05-20 2003-11-28 Tsukuba Semi Technology:Kk 機能水を使ったレジスト除去方法、およびその装置
US6932934B2 (en) 2002-07-11 2005-08-23 Molecular Imprints, Inc. Formation of discontinuous films during an imprint lithography process
US7077992B2 (en) 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US6936194B2 (en) 2002-09-05 2005-08-30 Molecular Imprints, Inc. Functional patterning material for imprint lithography processes
AU2003272613A1 (en) * 2002-09-20 2004-04-08 Pete Atwell System and method for removal of materials from an article
US20040065252A1 (en) 2002-10-04 2004-04-08 Sreenivasan Sidlgata V. Method of forming a layer on a substrate to facilitate fabrication of metrology standards
US8349241B2 (en) 2002-10-04 2013-01-08 Molecular Imprints, Inc. Method to arrange features on a substrate to replicate features having minimal dimensional variability
US7179396B2 (en) 2003-03-25 2007-02-20 Molecular Imprints, Inc. Positive tone bi-layer imprint lithography method
US7396475B2 (en) 2003-04-25 2008-07-08 Molecular Imprints, Inc. Method of forming stepped structures employing imprint lithography
US7157036B2 (en) 2003-06-17 2007-01-02 Molecular Imprints, Inc Method to reduce adhesion between a conformable region and a pattern of a mold
DE10343323A1 (de) 2003-09-11 2005-04-07 Carl Zeiss Smt Ag Stempellithografieverfahren sowie Vorrichtung und Stempel für die Stempellithografie
US8076386B2 (en) 2004-02-23 2011-12-13 Molecular Imprints, Inc. Materials for imprint lithography
US7029992B2 (en) * 2004-08-17 2006-04-18 Taiwan Semiconductor Manufacturing Company Low oxygen content photoresist stripping process for low dielectric constant materials
DE602005012068D1 (de) * 2005-06-10 2009-02-12 Obducat Ab Kopieren eines Musters mit Hilfe eines Zwischenstempels
US7832416B2 (en) 2006-10-10 2010-11-16 Hewlett-Packard Development Company, L.P. Imprint lithography apparatus and methods
KR100796047B1 (ko) * 2006-11-21 2008-01-21 제일모직주식회사 레지스트 하층막용 하드마스크 조성물, 이를 이용한 반도체집적회로 디바이스의 제조방법 및 그로부터 제조된 반도체집적회로 디바이스
US8337959B2 (en) 2006-11-28 2012-12-25 Nanonex Corporation Method and apparatus to apply surface release coating for imprint mold
US20080302400A1 (en) 2007-06-05 2008-12-11 Thomas Johnston System and Method for Removal of Materials from an Article
US20090166317A1 (en) * 2007-12-26 2009-07-02 Canon Kabushiki Kaisha Method of processing substrate by imprinting
US8394203B2 (en) 2008-10-02 2013-03-12 Molecular Imprints, Inc. In-situ cleaning of an imprint lithography tool

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000216128A (ja) * 1999-01-26 2000-08-04 Hitachi Electronics Eng Co Ltd 紫外線照射による基板処理装置
US20060141778A1 (en) 2002-02-14 2006-06-29 Nec Electronics Corporation Manufacturing method of semiconductor device
US20060046470A1 (en) 2004-09-01 2006-03-02 Becknell Alan F Apparatus and plasma ashing process for increasing photoresist removal rate
US20070138405A1 (en) 2005-12-16 2007-06-21 3M Innovative Properties Company Corona etching
JP2008091685A (ja) * 2006-10-03 2008-04-17 Seiko Epson Corp 素子基板およびその製造方法
JP2009034926A (ja) * 2007-08-02 2009-02-19 Sumitomo Electric Ind Ltd 樹脂パターン形成方法
JP2009298068A (ja) * 2008-06-16 2009-12-24 Fujifilm Corp パターン形成方法、並びに基板加工方法、モールド構造体の複製方法、及びモールド構造体

Also Published As

Publication number Publication date
JP2013518446A (ja) 2013-05-20
CN102859436B (zh) 2015-07-15
SG181560A1 (en) 2012-07-30
KR20120125297A (ko) 2012-11-14
WO2011094383A2 (en) 2011-08-04
CN102859436A (zh) 2013-01-02
US20110183521A1 (en) 2011-07-28
JP5782460B2 (ja) 2015-09-24
TWI551386B (zh) 2016-10-01
US8980751B2 (en) 2015-03-17
TW201139032A (en) 2011-11-16
WO2011094383A3 (en) 2011-09-29

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