TWI540657B - 直立批次式薄膜形成設備 - Google Patents

直立批次式薄膜形成設備 Download PDF

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Publication number
TWI540657B
TWI540657B TW101110840A TW101110840A TWI540657B TW I540657 B TWI540657 B TW I540657B TW 101110840 A TW101110840 A TW 101110840A TW 101110840 A TW101110840 A TW 101110840A TW I540657 B TWI540657 B TW I540657B
Authority
TW
Taiwan
Prior art keywords
processing
gas
chamber
film forming
processing chamber
Prior art date
Application number
TW101110840A
Other languages
English (en)
Chinese (zh)
Other versions
TW201250904A (en
Inventor
遠藤篤史
黑川昌毅
入宇田啟樹
Original Assignee
東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東京威力科創股份有限公司 filed Critical 東京威力科創股份有限公司
Publication of TW201250904A publication Critical patent/TW201250904A/zh
Application granted granted Critical
Publication of TWI540657B publication Critical patent/TWI540657B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
TW101110840A 2011-03-31 2012-03-28 直立批次式薄膜形成設備 TWI540657B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011078481A JP5595963B2 (ja) 2011-03-31 2011-03-31 縦型バッチ式成膜装置

Publications (2)

Publication Number Publication Date
TW201250904A TW201250904A (en) 2012-12-16
TWI540657B true TWI540657B (zh) 2016-07-01

Family

ID=46925559

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101110840A TWI540657B (zh) 2011-03-31 2012-03-28 直立批次式薄膜形成設備

Country Status (5)

Country Link
US (1) US20120247391A1 (enExample)
JP (1) JP5595963B2 (enExample)
KR (1) KR101474758B1 (enExample)
CN (1) CN102732856B (enExample)
TW (1) TWI540657B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103866294B (zh) * 2014-04-03 2017-01-11 江西沃格光电股份有限公司 镀膜充气装置
CN106467980B (zh) * 2015-08-21 2019-01-29 东莞市中镓半导体科技有限公司 一种大型垂直式hvpe反应室的装配辅助装置
JP6843087B2 (ja) 2018-03-12 2021-03-17 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
KR102477770B1 (ko) * 2018-05-08 2022-12-14 삼성전자주식회사 막 형성 장치, 막 형성 방법 및 막 형성 장치를 이용한 반도체 장치의 제조 방법
JP7271485B2 (ja) * 2020-09-23 2023-05-11 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法およびプログラム
CN114369813B (zh) * 2020-10-15 2023-05-26 长鑫存储技术有限公司 扩散炉
CN114606476A (zh) * 2020-12-03 2022-06-10 长鑫存储技术有限公司 薄膜的炉管沉积方法
KR20220143222A (ko) 2021-04-15 2022-10-25 삼성전자주식회사 박막 증착 장치 및 박막 증착 방법
JP7658672B2 (ja) 2021-06-08 2025-04-08 東京エレクトロン株式会社 熱処理装置
CN115588629A (zh) 2021-07-06 2023-01-10 Asm Ip私人控股有限公司 设置有提取器室的用于处理多个衬底的设备

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0189732U (enExample) * 1987-12-07 1989-06-13
JPH05347257A (ja) * 1992-06-15 1993-12-27 Nec Yamaguchi Ltd 減圧気相成長装置
JPH065533A (ja) * 1992-06-18 1994-01-14 Nippon Steel Corp 熱処理炉
JPH06196428A (ja) * 1992-12-24 1994-07-15 Sanyo Electric Co Ltd 半導体基板の処理装置
JPH0758030A (ja) * 1993-08-18 1995-03-03 Toshiba Corp 半導体製造装置
JPH08115883A (ja) * 1994-10-12 1996-05-07 Tokyo Electron Ltd 成膜装置
JP2000174007A (ja) * 1998-12-07 2000-06-23 Tokyo Electron Ltd 熱処理装置
KR20010110291A (ko) * 2000-02-18 2001-12-12 히가시 데쓰로 기판처리방법
JP2001274107A (ja) * 2000-03-28 2001-10-05 Nec Kyushu Ltd 拡散炉
JP4706260B2 (ja) * 2004-02-25 2011-06-22 東京エレクトロン株式会社 被処理体の酸化方法、酸化装置及び記憶媒体
KR100745130B1 (ko) * 2006-02-09 2007-08-01 삼성전자주식회사 박막 증착 장치 및 방법
US20090004405A1 (en) * 2007-06-29 2009-01-01 Applied Materials, Inc. Thermal Batch Reactor with Removable Susceptors
JP5198299B2 (ja) * 2008-04-01 2013-05-15 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及び基板処理方法
JP5284182B2 (ja) * 2008-07-23 2013-09-11 株式会社日立国際電気 基板処理装置および半導体装置の製造方法
JP5658463B2 (ja) * 2009-02-27 2015-01-28 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法

Also Published As

Publication number Publication date
KR101474758B1 (ko) 2014-12-19
JP2012212819A (ja) 2012-11-01
TW201250904A (en) 2012-12-16
KR20120112082A (ko) 2012-10-11
CN102732856A (zh) 2012-10-17
CN102732856B (zh) 2015-04-29
US20120247391A1 (en) 2012-10-04
JP5595963B2 (ja) 2014-09-24

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