TWI511214B - Oxidation prevention gas blowing unit - Google Patents

Oxidation prevention gas blowing unit Download PDF

Info

Publication number
TWI511214B
TWI511214B TW102110450A TW102110450A TWI511214B TW I511214 B TWI511214 B TW I511214B TW 102110450 A TW102110450 A TW 102110450A TW 102110450 A TW102110450 A TW 102110450A TW I511214 B TWI511214 B TW I511214B
Authority
TW
Taiwan
Prior art keywords
flow path
preventing gas
oxidation preventing
oxidation
hole
Prior art date
Application number
TW102110450A
Other languages
English (en)
Other versions
TW201415564A (zh
Inventor
Mitsuaki Sakakura
Toru Maeda
Original Assignee
Shinkawa Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinkawa Kk filed Critical Shinkawa Kk
Publication of TW201415564A publication Critical patent/TW201415564A/zh
Application granted granted Critical
Publication of TWI511214B publication Critical patent/TWI511214B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004Wire welding
    • B23K20/005Capillary welding
    • B23K20/007Ball bonding
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K3/00Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
    • B23K3/08Auxiliary devices therefor
    • B23K3/082Flux dispensers; Apparatus for applying flux
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/741Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L24/742Apparatus for manufacturing bump connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147Copper (Cu) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/781Means for controlling the bonding environment, e.g. valves, vacuum pumps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/78253Means for applying energy, e.g. heating means adapted for localised heating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/78268Discharge electrode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/78268Discharge electrode
    • H01L2224/78269Shape of the discharge electrode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301Capillary
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009Pre-treatment of the connector or the bonding area
    • H01L2224/8503Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85053Bonding environment
    • H01L2224/85054Composition of the atmosphere
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/85201Compression bonding
    • H01L2224/85205Ultrasonic bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/36Material effects
    • H01L2924/365Metallurgical effects

Description

氧化防止氣體吹出單元
本發明係關於一種安裝於打線裝置中之氧化防止氣體吹出單元的構造。
於打線裝置中,多數情況下進行無空氣球接合,即,藉由火花(spark)使自作為接合工具之毛細管之前端伸出之金屬線尾(wire tail)形成為無空氣球(free air ball),並將無空氣球於毛細管之前端接合於半導體元件、或基板之電極上。
先前,於打線接合中,多使用金線,而現在則使用較廉價且電特性優異之銅線進行接合。然而,銅線與金不同,易氧化,因此於藉由火花形成無空氣球時,導致於球之表面形成氧化皮膜。作為該氧化皮膜,存在使無空氣球與電極之附著性降低而引起接合不良之情形。因此,提出如下方法:例如於使用銅線進行接合時,在氮氣或氬氣等惰性氣體中形成無空氣球,從而抑制無空氣球表面發生氧化(例如參照專利文獻1)。
另一方面,存在如下問題:存在若接合時之無空氣球之表面溫度降低則無空氣球與電極之接合強度降低、或於形成無空氣球時若無空氣球之表面溫度降低則無空氣球會發生異形化(不為圓狀)之情形。因此,提出有如下方案:藉由將經加熱之還原性氣體於無空氣球形成之前後及無空氣球形成中流通於其周邊而將無空氣球之溫度保持得較高,從而確保接 合強度(例如參照專利文獻2)。又,提出有如下方法:於流通經加熱之惰性氣體之狀態下形成無空氣球,藉此,抑制無空氣球表面之氧化,並且將無空氣球之溫度保持得較高而進行接合(例如參照專利文獻3)。
然而,如專利文獻2、3所記載之先前技術般,於將自氣體噴嘴加熱之惰性氣體噴出的構造下,為了維持惰性氣體環境,必需加大惰性氣體之流量。因此,存在如下問題:用於對惰性氣體進行加溫之加熱器亦必需為大型,從而接合裝置變為大型、或動作變慢,而導致不易高速地接合。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本專利特開2007-294975號公報
[專利文獻2]日本專利特開昭63-164230號公報
[專利文獻3]日本專利特開昭63-266845號公報
因此,本發明之目的在於提供一種能以小型之構造有效地對無空氣球進行加溫的氧化防止氣體吹出單元。
本發明之氧化防止氣體吹出單元具備:中空板狀之基體部,其於內部形成有氧化防止氣體流路;孔,其以毛細管可抽出插入之方式設置於基體部,並與氧化防止氣體流路連通;及加熱器,其安裝於基體部之外表面上;該氧化防止氣體吹出單元之特徵在於:氧化防止氣體流路包含 設置於基體部的安裝有加熱器之外表面之附近的第一流路。
於本發明之氧化防止氣體吹出單元中,較佳為:氧化防止氣體流路具有第二流路,該第二流路係設置於第一流路與孔之間、且較第一流路深,並且第一流路包圍第二流路之至少一部分。
於本發明之氧化防止氣體吹出單元中,較佳為:第二流路具備:複數個吹出口,其朝向孔之中心吹出氧化防止氣體;及迷宮,其於自第一流路至各吹出口之間,使氧化防止氣體之流動方向至少變更2次。
於本發明之氧化防止氣體吹出單元中,較佳為:於設置在孔之側面的貫通孔中配置有火炬電極。
本發明發揮如下效果:提供一種能以小型之構造有效地對無空氣球進行加溫的氧化防止氣體吹出單元。
11‧‧‧超音波放大器
12‧‧‧毛細管
13‧‧‧金屬線尾
14‧‧‧無空氣球
20‧‧‧基體部
21‧‧‧本體
21a‧‧‧第一部分
21b‧‧‧第二部分
22‧‧‧蓋
22a‧‧‧缺口
23‧‧‧蓋板
23a‧‧‧缺口
24‧‧‧孔
24c‧‧‧中心
25‧‧‧氧化防止氣體供給管
26‧‧‧氧化防止氣體供給孔
30‧‧‧氧化防止氣體流路
30A‧‧‧第一流路
30B‧‧‧第二流路
30a‧‧‧上游側流路
30b‧‧‧下游側流路
31‧‧‧槽
32‧‧‧山部
33‧‧‧槽
34‧‧‧連接流路
35‧‧‧突起
36a‧‧‧突起
36b‧‧‧突起
37a‧‧‧突起
37b‧‧‧突起
38a‧‧‧突起
38b‧‧‧突起
39a‧‧‧段段
39b‧‧‧段段
40‧‧‧凹部
41‧‧‧底面
42‧‧‧側面
45a‧‧‧吹出口
45b‧‧‧吹出口
45c‧‧‧吹出口
50‧‧‧加熱器
50a‧‧‧缺口
50b‧‧‧發熱電阻體
51‧‧‧電極
60‧‧‧槽
61‧‧‧槽型流路
70‧‧‧火炬電極
71‧‧‧貫通孔
80‧‧‧高溫高濃度區域
100‧‧‧氧化防止氣體吹出單元
圖1係表示安裝有本發明之實施形態中之氧化防止氣體吹出單元之打線裝置的立體圖。
圖2係圖1所示之A部的放大立體圖。
圖3係表示本發明之實施形態中之氧化防止氣體吹出單元之構成的立體圖。
圖4係表示本發明之實施形態中之氧化防止氣體吹出單元之氧化防止氣體流路的說明圖。
圖5係示意性地表示本發明之實施形態中之氧化防止氣體吹出單元之 剖面的說明圖。
圖6係表示安裝有本發明之其他實施形態中之氧化防止氣體吹出單元之打線裝置的立體圖。
圖7係示意性地表示本發明之其他實施形態中之氧化防止氣體吹出單元之剖面的說明圖。
圖8係表示本發明之其他實施形態中之氧化防止氣體吹出單元之構成的立體圖。
以下,一面參照圖式一面對本發明之實施形態進行說明。如圖1所示,本實施形態之氧化防止氣體吹出單元100具備:中空板狀之基體部20,其於內部形成有氧化防止氣體流路30;孔24,其係以毛細管12可抽出插入之方式設置於基體部20,並與氧化防止氣體流路30連通;及加熱器50,其安裝於基體部20之外表面。
如圖1所示,基體部20具備:本體21,其表面形成有形成氧化防止氣體流路30之槽(於後文進行說明);較薄之平板狀蓋22,其安裝於本體21之上並將形成於本體21上的槽之開放端封閉,且與該槽一同形成氧化防止氣體流路30。因此,蓋22的與本體21相反側的表面(上表面)成為基體部20的外表面。於作為基體部20之外表面的蓋22之上表面上安裝有與蓋22具有相同平面形狀的膜狀之加熱器50,且於加熱器50之上安裝有與蓋22具有相同平面形狀之蓋板23。於蓋板23上露出加熱器50之電極51。又,供給氧化防止氣體之氧化防止氣體供給管25連接於本體21。
如圖2所示,於與氧化防止氣體流路30連通之孔24的側面 設置有貫通孔71,且於該貫通孔71之中配置有火炬電極70。火炬電極70係藉由於與自毛細管12之前端伸出之金屬線尾13之間進行放電而使金屬線尾13之前端形成為無空氣球14。
於接合動作時,圖1所示之毛細管12係藉由安裝於未圖示之接合臂上的超音波放大器(Ultrasonic Horn)11而於上下方向(Z方向)上移動從而將形成於金屬線尾13之前端的無空氣球14向半導體晶粒或基板之電極推壓,從而將金屬線與電極接合(bond)。氧化防止氣體吹出單元100係安裝於安裝有超音波放大器11之接合頭(未圖示)上,且與超音波放大器11、毛細管12一同於XY方向上移動。氧化防止氣體可為氮氣或氬氣等惰性氣體,亦可使用例如混合有氫等之還原性氣體的氣體。
如圖3所示,本體21具備:大致梯形之第一部分21a,其寬度自安裝有氧化防止氣體供給管25之根部分朝向前端變小;及圓頭長方形之第二部分21b,其包含供毛細管12貫通之孔24。於第一部分21a之表面設置有彎折且較淺的槽31、及各槽31間之帶狀山部32。於第一部分21a之根側之槽31中設置有與氧化防止氣體供給管25連通之氧化防止氣體供給孔26。又,於第二部分21b之外周側之表面設置有槽33,該槽33具有與槽31連接之直線狀部分、及沿著第二部分21b之前端之半圓形狀的月牙型部分。如圖5所示,於本實施形態中,槽31與槽33之深度同為深度H1
於第二部分21b之中央形成有較槽31、33深的凹部40。槽33與凹部40係藉由連接流路34而連通。如圖5所示,凹部40之深度為H2 。於凹部40中,如圖4所示,設置有複數個突起35、36a、36b、37a、37b、38a、38b。如圖3、圖4所示,突起35係自凹部40之底面41突出,且連接 流路34側為凹部之半圓筒型突起;突起36a、36b係自凹部40之左右之側面42朝向突起35之側面分別突出的板型突起;突起37a、37b係於突起35與突起36a、36b之間的各間隙之孔24側自凹部40之底面41突出的板狀突起;突起38a、38b係自凹部40之底面41突出,且沿著孔24之周圍彼此相離地設置的圓弧狀突起。於突起38a、38b之孔24側設置有較凹部40之底面41高的段部39a、39b。
於凹部40之孔24側的本體21中,設置有較凹部40淺的槽60。槽60的自本體21之表面起的深度係如圖5所示為深度H3 。又,如圖5所示,段部39a、39b的自本體21之表面起的深度亦為深度H3
如圖5所示,各突起35、37a、37b、38a、38b之上表面、與本體21之安裝蓋22之表面為相同高度。圖4所示之山部32、各突起36a、36b亦相同。又,如圖3所示,蓋22係自與本體21外形相同之外形將槽60之部分、及孔24之周圍部分以U字型切除的形狀,且該U字型缺口22a之圓弧部分的半徑略微小於突起38a、38b之孔24側之圓弧面的半徑。因此,如圖3所示,若將平板之蓋22安裝於本體21上,則槽31、33之周圍的本體21之表面、山部32之上表面、及各突起35、36a、36b、37a、37b、38a、38b之上表面密接於蓋22之底面,且蓋22、槽31、33、與山部32構成較淺的第一流路30A。第一流路30A包含:上游側流路30a,其為形成於本體21之第一部分21a的表面附近的彎曲流路;及下游側流路30b,其為形成於本體21之第二部分21b的表面附近且接續於直線流路的月牙型流路。又,蓋22、凹部40與各突起35、36a、36b、37a、37b、38a、38b構成與孔24連通的第二流路30B。第一流路30A與第二流路30B係藉由連接流路34而連通。 因此,氧化防止氣體流路30係由包含上游側流路30a與下游側流路30b之第一流路30A、及第一流路與孔24之間的第二流路30B構成。
如圖3所示,第一流路30A之下游側流路30b的直線狀部分係與第二流路30B平行地配置,且下游側流路30b之月牙型部分係沿著第二流路30B之外周而配置於其與第二部分21b之外表面之間。因此,下游側流路30b包圍第二部分21b之前端側的第二流路30B的周圍。
相當於蓋22之U字型缺口22a之區域的孔24之周圍與槽60之部分未被蓋22覆蓋,而處於開放的狀態,因此可自蓋22之表面側看到孔24。又,槽60係構成使蓋22側開放之槽型流路61,並構成於超音波放大器11下降時超音波放大器11不會與本體21碰撞之退避部。
如圖3所示,膜狀之加熱器50、蓋板23的形狀亦分別為與蓋22相同,並分別具有形狀與蓋22之U字型之缺口22a相同的缺口50a、23a。因此,若使蓋22、加熱器50、及蓋板23重疊於本體21之表面上,則各U字型缺口50a、23a亦不會覆蓋於孔24之周圍與槽60之部分,而如圖1所示,毛細管12可通過各U字型缺口22a、50a、23a之部分而插通於孔24中。於本實施形態中,本體21、蓋22、及蓋板23分別為陶瓷製,且如圖3所示,以本體21、蓋22、加熱器50、及蓋板23之順序重疊而燒結形成、或以接著劑組裝。
如圖3、圖4所示,以蓋22、槽31及山部32所構成之翻折型上游側流路30a的流路剖面面積係隨著朝向下游而變窄,自第一部分21a朝向第二部分21b的最下游之直線狀流路的流路剖面面積變得最小。上游側流路30a之上述直線狀之部分係與設置於本體21之第二部分21b的下游 側流路30b之直線狀部分相連。關於以蓋22、槽33及槽33周圍之本體21之表面所構成、且包含直線狀部分與月牙型部分的下游側流路30b之直線狀部分,其流路剖面面積於下游側流路30b中變得最小。下游側流路30b之月牙型部分的流路剖面面積係隨著朝向第二部分21b之前端而變大,且當越過第二部分21b之前端後,流路剖面面積逐漸變窄,且延伸至第二部分21b的與第一部分21a為相反側之位置。與上游側流路30a之翻折部分的流路剖面面積相比,下游側流路30b之月牙型部分之流路剖面面積較小。
如圖5所示,上游側流路30a與下游側流路30b係配置在本體21之表面附近的較淺的流路,且蓋22為較薄的平板,如圖3所示,加熱器50係遍及蓋22之上游側流路30a、下游側流路30b之整個區域而配置,因此氧化防止氣體可藉由加熱器50而有效地加熱。如先前說明般,連接上游側流路30a與下游側流路30b之直線狀部分為流路剖面面積最小的部分,而氧化防止氣體的流速於該部分中為最快。又,下游側流路30b之月牙型部分之流路剖面面積小於上游側流路30a之翻折部分的流路剖面面積,因此流入至月牙型部分中之氧化防止氣體之流速略微慢於上述直線狀部分的流速。配置於越過第二部分21b之前端之區域(下游側)內的下游側流路30b的月牙型部分之前端被封閉,因此氧化防止氣體滯留於內部。
如圖4所示,氧化防止氣體自設置於本體21之第一部分21a之槽31中的氧化防止氣體供給孔26流入至上游側流路30a中,並一面如圖中之箭頭所示般改變流動方向,一面於較淺之上游側流路30a之翻折部分中流動。自上游側流路30a至下游側流路30b之月牙型部分中,由於槽31較淺,因此氧化防止氣體有效率地吸收加熱器的熱。於流經較長之翻折部分 時,氧化防止氣體之溫度緩慢上升。而且,若氧化防止氣體流入連接上游側流路30a與下游側流路30b之直線狀部分中,則溫度進一步上升。進而,即便於配置在第二部分21b之前端之前的區域(上游側)內的下游側流路30b之月牙型部分中,氧化防止氣體的溫度亦逐漸上升。若表示本實施形態中之氧化防止氣體之溫度上升的一例,則於膜狀之加熱器50之厚度為0.015mm、輸入電力為1W的情況下,可使0.3l/min之氧化防止氣體自常溫上升至130℃左右。此時,加熱器50之溫度為150℃左右。又,配置於越過第二部分21b之前端之區域(下游側)內的下游側流路30b之月牙型部分之前端被封閉,因此溫度已上升之氧化防止氣體滯留於內部。
高溫之氧化防止氣體自連接流路34流入至第二流路30B中。如先前所述般,第二流路30B係由蓋22、深度為H2 之凹部40、及各突起35、36a、36b、37a、37b、38a、38b所構成,因此與由蓋22、深度為H1 之較淺的槽31、33所構成之第一流路30A相比,流路剖面面積非常大。因此,於第二流路30B內,氧化防止氣體之流速與第一流路30A之流速相比非常慢。因此,雖未藉由加熱器50進行使溫度上升的加熱,但可藉由加熱器50保持為高溫狀態。
又,如先前所述,第一流路30A之下游側流路30b的直線狀部分係與第二流路30B平行地配置,且下游側流路30b的月牙型部分係沿著第二流路30B之外周而配置於其與第二部分21b之外表面之間,因此第二流路30B係藉由流過或滯留為高溫之氧化防止氣體的下游側流路30b而包圍其一部分。因此,可抑制第二流路30B中之氧化防止氣體之溫度降低,且與來自加熱器50之熱輸入相結合而將第二流路30B中之氧化防止氣體的 溫度保持為高溫狀態。
如圖4所示,流入至第二流路30B中之高溫的氧化防止氣體係藉由各突起35、36a、36b、37a、37b、38a、38b而變更其方向。自連接流路34流入之氧化防止氣體係藉由突起35而將流動方向朝向凹部40之側面42變更;藉由突起36a、36b而將流動方向變更為凹部40之中心側;藉由突起37a、37b將流動方向變更為左右方向;藉由突起38a、38b將流動方向變更為孔24之中心24c的方向;並自突起38a、38b之間及突起38a、38b與凹部40之側面42之間的吹出口45a、45b、45c朝向孔24之中心24c吹出。即,各突起35、36a、36b、37a、37b、38a、38b係構成將高溫的氧化防止氣體之流動至少變更2次的迷宮,且高溫氧化防止氣體自突起38a、38b之間及突起38a、38b與凹部40之側面42之間的吹出口45a、45b、45c均等地朝向孔24之中心24c吹出。自吹出口45a、45b、45c均等地朝向孔24之中心24c吹出之氧化防止氣體的一部分如圖5所示般,通過孔24自本體21之下表面朝向下方流出,且其他一部分通過由槽60所構成之槽型流路61於水平方向流出。
第二流路30B係於將自配置於本體21之表面附近的第一流路30A流入之高溫氧化防止氣體保持為高溫狀態的情況下,使其於本體21之高度方向上擴散,因此可於高度方向之較廣範圍內,吹出高溫之氧化防止氣體。孔24係設置於凹部40之底面41,因此不會產生由於外部空氣之流動而導致自吹出口45a、45b、45c吹出之氧化防止氣體的流動被擾亂的現象,而且突起38a、38b於孔24之周圍形成為壁,且如圖5所示,突起38a、38b之各段部39a、39b延伸至與槽60之底面相同之高度,因此如圖5之雲 標記所示,可於孔24之周圍形成高溫之氧化防止氣體之濃度較高的高溫高濃度區域80。於本實施形態中,即便為先前所述之0.3 liter/min之較少的氧化防止氣體之流量,亦可形成溫度為130℃左右且氧化防止氣體之濃度大致100%的高溫高濃度區域80。
如圖5所示,將毛細管12之中心對準孔24之中心24c,並以使毛細管12之前端的金屬線尾13進入氧化防止氣體之高溫高濃度區域80之中的方式調整超音波放大器11之高度後,使配置在設置於孔24之側面的貫通孔71中的火炬電極70與金屬線尾13之間產生放電,從而使金屬線尾13形成為無空氣球14。即,於高溫高濃度之氧化防止氣體中形成無空氣球14,因此可抑制無空氣球14之異型化(不為球形)或表面之氧化。進而,於惰性氣體環境中進行放電,因此可抑制因火炬電極70之氧化等所導致的劣化。
而且,藉由向已形成之無空氣球14均等地噴附130℃左右的高溫氧化防止氣體,可有效地將無空氣球14之溫度保持為高溫而進行接合,因此可進行保持充分的接合強度之接合。藉由將無空氣球之溫度保持為高溫,可於無空氣球較軟之狀態下進行接合,能抑制構成金屬線之銅等之金屬材料之加工硬化,且通過抑制無空氣球之溫度之急遽降低而減少內部之雜質,並可抑制無空氣球變硬等,藉此,可使接合時之推壓力、基板之加熱溫度變少,因此可進行無損傷的接合(幾乎不會因接合而使基板等產生損傷的接合)。藉此,可使接合品質提高。進而,若無空氣球之溫度上升,則接合時之金屬接合時的擴散亦變好,因此可較少地施加超音波振動,進而可使接合品質提高。
如以上所述,本實施形態之氧化防止氣體吹出單元100藉由配置於安裝有加熱器50的本體21之表面附近的較淺的第一流路30A使氧化防止氣體之溫度有效地上升,並藉由較第一流路30A深的第二流路30B使氧化防止氣體於高度方向擴散,並且使其自孔24之周圍朝向無空氣球14均等地吹出,藉此,可利用較少流量的氧化防止氣體對無空氣球14有效地進行加溫或保溫,且可進行具有充分接合強度的接合。
又,由於可藉由少量的氧化防止氣體對無空氣球14有效地進行加溫或保溫,因此可縮小氧化防止氣體流路30,並可使全體構成小型化。
進而,由於第二流路30B係藉由流過或滯留有高溫之氧化防止氣體的下游側流路30b而包圍其周圍之一部分,因此可將第二流路30B中之氧化防止氣體之溫度有效地保持為高溫狀態,並將高溫的氧化防止氣體噴附於無空氣球14。
本實施形態中,係將加熱器50作為與蓋22形狀相同的膜狀之加熱器進行說明,但只要為薄型加熱器,則亦可不為膜狀。又,只要可對流過較淺的第一流路30A之氧化防止氣體進行加熱,則亦可不與蓋22的形狀相同,亦可將複數個加熱器分開地配置於蓋22之表面。
參照圖6、圖7對本發明之其他實施形態進行說明。對與參照自圖1至圖5而說明之實施形態相同的部分標注相同符號並省略說明。本實施形態如圖7所示,加熱器50之大小略小於蓋22、蓋板23之外形,且於蓋板23之周圍設置有覆蓋加熱器50之端部的突起。因此,如圖6所示,加熱器50之端面未露出於外部,自外部無法看到加熱器50。
本實施形態中,由於加熱器50之端面未露出於外部,因此可更有效地對流路內之氧化防止氣體進行加熱。再者,於膜狀之加熱器50非常薄的情況下,如圖7所示,亦可為不在蓋板23之周圍設置突起的構成。
一面參照圖8一面對本發明之另一實施形態進行說明。對與先前已說明之實施形態相同之部分標注相同符號並省略說明。如圖8所示,本實施形態係代替先前已說明之實施形態之膜狀之加熱器50,而於蓋22之表面安裝有發熱電阻體50b之圖案。本實施形態發揮與先前已說明之實施形態相同之效果。
11‧‧‧超音波放大器
12‧‧‧毛細管
20‧‧‧基體部
21‧‧‧本體
22‧‧‧蓋
23‧‧‧蓋板
24‧‧‧孔
25‧‧‧氧化防止氣體供給管
30‧‧‧氧化防止氣體流路
50‧‧‧加熱器
51‧‧‧電極
60‧‧‧槽
61‧‧‧槽型流路
100‧‧‧氧化防止氣體吹出單元

Claims (4)

  1. 一種氧化防止氣體吹出單元,其具備:中空板狀之基體部,其於內部形成有氧化防止氣體流路;孔,其以毛細管可抽出插入之方式設置於上述基體部中,並與上述氧化防止氣體流路連通;及加熱器,其係安裝於上述基體部之外表面;且該氧化防止氣體吹出單元之特徵在於:上述氧化防止氣體流路包含設置於上述基體部的安裝有上述加熱器之外表面之附近的槽狀之第一流路。
  2. 如申請專利範圍第1項之氧化防止氣體吹出單元,其中上述氧化防止氣體流路具有第二流路,該第二流路係設置於上述第一流路與上述孔之間,且較上述第一流路深;且上述第一流路將上述第二流路之至少一部分包圍。
  3. 如申請專利範圍第2項之氧化防止氣體吹出單元,其中上述第二流路具備:複數個吹出口,其朝向上述孔之中心吹出氧化防止氣體;及迷宮,其於自上述第一流路至上述各吹出口之間,使氧化防止氣體之流動方向至少變更2次。
  4. 如申請專利範圍第1至3項中任一項之氧化防止氣體吹出單元,其中於設置於上述孔之側面之貫通孔中配置有火炬電極。
TW102110450A 2012-10-05 2013-03-25 Oxidation prevention gas blowing unit TWI511214B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012222970A JP2014075519A (ja) 2012-10-05 2012-10-05 酸化防止ガス吹き出しユニット

Publications (2)

Publication Number Publication Date
TW201415564A TW201415564A (zh) 2014-04-16
TWI511214B true TWI511214B (zh) 2015-12-01

Family

ID=50434646

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102110450A TWI511214B (zh) 2012-10-05 2013-03-25 Oxidation prevention gas blowing unit

Country Status (6)

Country Link
US (1) US9362251B2 (zh)
JP (1) JP2014075519A (zh)
KR (1) KR101643244B1 (zh)
CN (1) CN105122434B (zh)
TW (1) TWI511214B (zh)
WO (1) WO2014054306A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5916814B2 (ja) * 2014-08-06 2016-05-11 株式会社カイジョー ボンディング方法及びボンディング装置
JP6467281B2 (ja) 2015-04-30 2019-02-13 日鉄マイクロメタル株式会社 ボンディングワイヤのボール形成方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101996903A (zh) * 2009-08-13 2011-03-30 株式会社华祥 引线接合装置

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5972730A (ja) 1982-10-20 1984-04-24 Sumitomo Electric Ind Ltd 半導体単結晶の加工方法
JPS63147338A (ja) 1986-12-11 1988-06-20 Toshiba Corp ワイヤボンデイング装置用ト−チ
US4976393A (en) 1986-12-26 1990-12-11 Hitachi, Ltd. Semiconductor device and production process thereof, as well as wire bonding device used therefor
JPS63164230A (ja) 1986-12-26 1988-07-07 Hitachi Ltd ワイヤボンディング方法
EP0276928B1 (en) 1987-01-26 1994-10-26 Hitachi, Ltd. Wire Bonding
JPS63266845A (ja) 1987-04-24 1988-11-02 Hitachi Ltd ワイヤボンデイング装置
JPH03253045A (ja) * 1990-03-02 1991-11-12 Hitachi Ltd ワイヤボンディング装置
JP2975207B2 (ja) * 1992-02-25 1999-11-10 ローム株式会社 半田ワイヤーによるワイヤーボンディング装置
US6180891B1 (en) 1997-02-26 2001-01-30 International Business Machines Corporation Control of size and heat affected zone for fine pitch wire bonding
US6234376B1 (en) * 1999-07-13 2001-05-22 Kulicke & Soffa Investments, Inc. Supplying a cover gas for wire ball bonding
JP2003037131A (ja) 2001-07-25 2003-02-07 Sanyo Electric Co Ltd ボンディング装置
JP4043495B2 (ja) 2006-04-20 2008-02-06 株式会社カイジョー ワーククランプ及びワイヤボンディング装置
US20070251980A1 (en) 2006-04-26 2007-11-01 Gillotti Gary S Reduced oxidation system for wire bonding
US7614538B2 (en) 2006-05-15 2009-11-10 Kulicke And Soffa Industries, Inc. Device clamp for reducing oxidation in wire bonding
JP2008034811A (ja) 2006-07-03 2008-02-14 Shinkawa Ltd ワイヤボンディング装置におけるボール形成装置及びボンディング装置
US7628307B2 (en) 2006-10-30 2009-12-08 Asm Technology Singapore Pte Ltd. Apparatus for delivering shielding gas during wire bonding
JP4392015B2 (ja) 2006-11-21 2009-12-24 株式会社カイジョー ワイヤボンディング装置
KR101434001B1 (ko) 2008-06-10 2014-08-25 쿨리케 앤드 소파 인더스트리즈, 인코포레이티드 와이어 본딩 작업에서 산화 감소를 위한 가스 전달 시스템
US20100078464A1 (en) 2008-10-01 2010-04-01 Kabushiki Kaisha Shinkawa Wire bonding apparatus and ball forming method
US7938308B1 (en) * 2009-04-24 2011-05-10 Amkor Technology, Inc. Wire bonder for improved bondability of a conductive wire and method therefor
US8096461B2 (en) * 2009-09-03 2012-01-17 Advanced Semiconductor Engineering, Inc. Wire-bonding machine with cover-gas supply device
TWI429009B (zh) 2010-05-12 2014-03-01 Chipmos Technologies Inc 導氣管裝置
US8186562B1 (en) 2010-12-14 2012-05-29 Asm Technology Singapore Pte Ltd Apparatus for increasing coverage of shielding gas during wire bonding
WO2013111452A1 (ja) * 2012-01-26 2013-08-01 株式会社新川 酸化防止ガス吹き出しユニット
JP5296233B2 (ja) 2012-02-07 2013-09-25 株式会社新川 ワイヤボンディング装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101996903A (zh) * 2009-08-13 2011-03-30 株式会社华祥 引线接合装置

Also Published As

Publication number Publication date
KR20140129247A (ko) 2014-11-06
US9362251B2 (en) 2016-06-07
KR101643244B1 (ko) 2016-07-27
US20150214180A1 (en) 2015-07-30
CN105122434A (zh) 2015-12-02
CN105122434B (zh) 2018-08-24
JP2014075519A (ja) 2014-04-24
WO2014054306A1 (ja) 2014-04-10
TW201415564A (zh) 2014-04-16

Similar Documents

Publication Publication Date Title
TWI511214B (zh) Oxidation prevention gas blowing unit
JP2007324604A (ja) ボンディング接合部および2つのコンタクト面をボンディングするための方法
TWI467676B (zh) Threading device
JP5592029B2 (ja) 酸化防止ガス吹き出しユニット
JP6054423B2 (ja) 流路部材およびこれを用いた熱交換器ならびに半導体装置
TWI517275B (zh) Oxidation prevention gas blowing unit
JP2009105114A (ja) ワイヤボンディング装置及びボール形成方法
JP4366611B2 (ja) 半導体装置の製造方法
JP2006278385A (ja) 電子部品及びその製造方法
JP6632856B2 (ja) ボンディングヘッドおよび実装装置
US20150364440A1 (en) Rapid cooling system for a bond head heater
WO2017065073A1 (ja) ボンディングヘッドおよび実装装置
JP6011116B2 (ja) 半導体発光素子
JP2019153807A (ja) ヒータ
JP2010157535A (ja) 半導体レーザ装置
JP2015039816A (ja) 樹脂部材の溶着装置
JPH05111235A (ja) リニアモータ装置
KR20050091563A (ko) 와이어 본딩 장치의 방전 방지 구조

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees