TWI504650B - 增加聚矽氮烷和氮化矽間黏著性的方法和形成溝槽隔離結構的方法 - Google Patents
增加聚矽氮烷和氮化矽間黏著性的方法和形成溝槽隔離結構的方法 Download PDFInfo
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- TWI504650B TWI504650B TW100138023A TW100138023A TWI504650B TW I504650 B TWI504650 B TW I504650B TW 100138023 A TW100138023 A TW 100138023A TW 100138023 A TW100138023 A TW 100138023A TW I504650 B TWI504650 B TW I504650B
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- tantalum nitride
- forming
- nitride liner
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- 238000000034 method Methods 0.000 title claims description 63
- 238000002955 isolation Methods 0.000 title claims description 19
- 229920001709 polysilazane Polymers 0.000 title description 6
- 229910052581 Si3N4 Inorganic materials 0.000 title 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 50
- 239000010410 layer Substances 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 36
- 239000011247 coating layer Substances 0.000 claims description 27
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 18
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 12
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 9
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 8
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 8
- 239000012670 alkaline solution Substances 0.000 claims description 7
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 7
- 239000000243 solution Substances 0.000 claims description 7
- 239000003929 acidic solution Substances 0.000 claims description 6
- 230000005660 hydrophilic surface Effects 0.000 claims description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 229920002098 polyfluorene Polymers 0.000 claims description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims 5
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 8
- 239000011810 insulating material Substances 0.000 description 6
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 229910000420 cerium oxide Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229920002873 Polyethylenimine Polymers 0.000 description 1
- 229910008051 Si-OH Inorganic materials 0.000 description 1
- 229910006358 Si—OH Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- -1 electrodes Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 230000009969 flowable effect Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000006193 liquid solution Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229920005573 silicon-containing polymer Polymers 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
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- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
- H01L21/02222—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
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- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
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- H01L21/02326—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen into a nitride layer, e.g. changing SiN to SiON
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Description
本發明係有關於一種於積體電路中使用絕緣材料進行電性隔離之方法，特別是有關於一種增加聚矽氮烷(Polysilazane)和氮化矽間之黏著的方法。
為形成半導體積體電路，半導體元件係整合至一晶片的微小區域上，因此，元件彼此間係放置的相當接近。隨著積體電路之元件的尺寸和間距持續的縮小，絕緣材料係沉積在積體電路上，以電性隔離各種構件(例如電晶體、電阻器和電容器)。隔離絕緣材料一般是由氧化矽組成。
舉例來說，例如淺溝槽隔離物之絕緣材料係形成在基底構件間之溝槽(或凹槽)中。上述溝槽的為0.01~0.05微米或更小，而對此相當窄的圖樣進行填充是很困難的。此外，絕緣材料必須能承受後續蝕刻或清洗之步驟。
絕緣材料一般是由化學氣相沉積法(CVD)或電漿輔助化學氣相沉積法(PECVD)沉積形成。舉例來說，在一般的淺溝槽隔離物(STI)方法中，係蝕刻基底形成溝槽，且溝槽係填入化學氣相沉積法(CVD)形成例如氧化矽之氧化物，作為一保護層。在溝槽中，氧化物之保護層係先形成在溝槽之側壁，再朝著溝槽之中心成長，至氧化層彼此接觸。在高深寬比之圖樣中，溝槽的寬度變的更窄，且深度變的更深，所以使用化學氣相沉積法(CVD)或電漿輔助化學氣
相沉積法(PECVD)形成沒有縫隙或孔洞溝槽填充變的越來越困難。
現已開發出例如旋轉塗佈介電(spin-on dielectrics，SOD)、旋轉塗佈玻璃(spin on glass，SOG)、旋轉塗佈高分子(spin-on polymer)的流動性材料，具有良好的縫隙填充特性。其氧化矽薄膜係採用以下方法形成：旋轉塗佈一含矽高分子(silicon-containing polymer)之液態溶液至一基底之表面，後續進行烘乾步驟以移除溶劑，接著，高分子層於氧氣中常壓升溫至1000℃進行氧化。以下根據第1圖形成溝槽隔離物的問題。請參照第1圖，使用一位於基底102上之墊層108作為罩幕形成一溝槽104。形成聚矽氮烷塗佈層(Polysilazane coating layer)於基底102上和溝槽104中，後續，於高溫含氧之環境中進行烘烤，以於溝槽104中形成氧化矽層110。在現在的方法中，為了要避免基底102因為在氧化聚矽氮烷塗佈層之製程中和氧氣或水氣反應消耗，需要形成一氮化矽襯層。由於聚矽氮烷塗佈層和其下的氮化矽襯層106的黏著性不佳，很容易在去除玻璃(deglass)、濕蝕刻或化學機械研磨後產生凹痕(divot)112。因此，需要一增加聚矽氮烷塗佈層和氮化矽襯層黏著性的方法。
根據上述，本發明提供一種增加聚矽氮烷和氮化矽間黏著性的方法，包括提供一基底，包括一溝槽；形成氮化矽襯層於溝槽之底部和側壁；對氮化矽襯層進行一處理製
程，產生具有OH基團的親水表面，以增加氮化矽襯層和後續步驟形成的聚矽氮烷塗佈層的黏著性；及於溝槽之氮化矽襯層上形成一聚矽氮烷塗佈層。
本發明提供一種形成溝槽隔離結構之方法，包括提供一基底；於基底中形成一溝槽；形成氮化矽襯層於溝槽之底部和側壁；對氮化矽襯層進行一處理製程，產生具有OH基團的親水表面，以增加氮化矽襯層和後續步驟形成的聚矽氮烷塗佈層的黏著性；及於溝槽之氮化矽襯層上形成一聚矽氮烷塗佈層；加熱基底，氧化聚矽氮烷塗佈層，以形成氧化矽層；及平坦化氧化矽層。
為讓本發明之特徵能更明顯易懂，下文特舉實施例，並配合所附圖式，作詳細說明如下：
以下詳細討論實施本發明之實施例。可以理解的是，實施例提供許多可應用的發明概念，其可以較廣的變化實施。所討論之特定實施例僅用來揭示使用實施例的特定方法，而不用來限定揭示的範疇。
以下內文中之「一實施例」是指與本發明至少一實施例相關之特定圖樣、結構或特徵。因此，以下「在一實施例中」的敘述並不是指同一實施例。另外，在一或多個實施例中的特定圖樣、結構或特徵可以適當的方式結合。值得注意的是，本說明書的圖式並未按照比例繪示，其僅用來揭示本發明。
第2A圖~第2F圖揭示本發明一實施例形成溝槽隔離結構之方法，其中溝槽隔離結構可用來電性隔離積體電路中的元件。舉例來說，溝槽隔離結構可鄰近電晶體之閘極形成，且於基底中鄰接電晶體之源極/汲極區。
請參照第2A圖，其顯示一初始製程步驟之晶圓部分(wafer fragment)204。晶圓部分204可包括半導體晶圓基底202或形成於基底202上之製程中形成的層，其包括一或多個半導體層和主動可操作之半導體元件部分。半導體元件可包括電晶體、電容器、電極、絕緣物或其它半導體結構可用運用之構件。
圖式中的晶圓部分204包括一半導體基底，半導體基底202上形成有約8-20nm的第一墊層212，用作一墊氧化層。第一墊層212可由對基底進行熱氧化層、化學氣相沉積法、濺鍍法或類似的技術形成。更甚者，可於第一墊層212上以化學氣相沉積法或其它的沉積技術形成第二墊層214，以提供氧化或化學機械研磨(CMP)之硬式罩幕層。第二墊層214較佳為氮化矽組成，其厚度可以為40-200nm。使用黃光微影技術形成和圖案化一光阻罩幕層(未繪示)，接著，對第一墊層212、第二墊層214和基底202進行蝕刻，於基底中形成類似淺溝槽206之開口或凹槽，作為元件隔離。舉例來說，溝槽206的寬度可以約為0.1μm，深度可以約為0.5μm，深寬比可以約為5(0.5/0.1)。溝槽206包括側壁210和底部表面208。溝槽206可以具有傾斜或非等向性蝕刻製程形成的垂直側壁。後續，移除光阻罩幕
層。
在移除光阻罩幕層和清洗溝槽結構之後，如第2B圖所示，可以熱氮化法或高密度電漿化學氣相沉積法(使用SiH4和NH3作為來源氣體)形成氮化矽襯層216於溝槽206之底部208和側面210上。氮化矽襯層216之厚度約為5nm~20nm。
請參照第2C圖，由於氮化矽襯層216和後續形成的聚矽氮烷(Polysilazane)塗佈層間的黏著性並不能獲得滿足，本實施例係對氮化矽襯層216進行一處理製程，以增加氮化矽襯層216和後續形成的聚矽氮烷塗佈層間的黏著力。在本發明一實施例中，處理製程係於氮化矽襯層216上進行，以得到具有OH基團(OH group)之親水的表面，以改進氮化矽襯層216和後續形成的聚矽氮烷(Polysilazane)塗佈層間的黏著力，其理由是Si-OH可和(SH2NH)n互相作用，以產生強力的化學鍵。在本發明一實施例中，上述對氮化矽襯層216之處理步驟是濕式處理製程。舉例來說，濕式處理製程使用去離子水、酸溶液或鹼性溶液處理氮化矽襯層。例如，具有氮化矽襯層216之基底202浸在去離子水、酸性溶液或鹼性溶液中，酸性溶液包括氯化氫HCl或HPM(HCl/H2O2/H2O)，鹼性溶液包括氫氧化鉀KOH、氫氧化四甲基銨溶液tetramethylammonium hydroxide(TMAH)或APM(NH4OH/H2O2/H2O)。在一範例中，HPM具有以下比例：HCl/H2O2/H2O=1/2/50，APM具有以下比例：NH4OH/H2O2/H2O=1/1/50，製程溫度約為室溫至
100℃，處理時間約為1~10分鐘。在本發明另一實施例中，對氮化矽襯層216之處理製程是蒸氣處理，其中製程溫度約為100℃~200℃。
如第2D圖所示，於基底上旋轉塗佈一聚矽氮烷(Polysilazane)溶液，且填入溝槽206中，以形成聚矽氮烷塗佈層218。一般來說，聚矽氮烷塗佈層218係藉由旋轉塗佈或旋轉玻璃(spin-on glass)製程，形成於基底202上，然而，本發明不限於此，本發明可採用其它的方法形成聚矽氮烷塗佈層，例如流動塗佈(flow coating)、浸泡(dip)或噴灑製程。在一較佳實施例中，聚矽氮烷塗佈層218是藉由旋轉塗佈有機溶劑中的聚矽氮烷溶液至填滿溝槽206之預定部分或全部部分中形成。聚矽氮烷包含SixNyHz型態之單元，其中矽原子係於-Si-NH-鍵中的還原環境(reducing environment)。聚矽氮烷材料若沒有進行調整，其不能令人滿意的進行蝕刻或製程(500：1之HF無法以超過1000Å/min之速率進行蝕刻)。氮鍵需要氧化，以將材料轉換成氧化矽。
在基底202上形成層之過程中，係在一平面上旋轉一基底202之時候，將聚矽氮烷溶液滴在矽基底202之表面或基底之層上，以依據施加於基底(或晶圓)之離心力，形成均勻塗佈之薄膜於全部基底202之表面上。本實施例可藉由調整塗佈溶液的濃度和基底202旋轉的速度，控制聚矽氮烷塗佈層之厚度。聚矽氮烷塗佈層厚度範圍一般為30nm~500nm。
於基底202上旋轉塗佈聚矽氮烷溶液之製程參數如
下：基底202溫度約為18℃~30℃，旋轉之速度約為500rpm~6000rpm，旋轉之時間約為2秒。
請參照第2E圖，在塗佈製程之後，對基底202進行加熱以移除有機溶劑，氧化聚矽氮烷塗佈層218，及形成氧化矽層220。在此步驟中，聚矽氮烷塗佈層218係藉由以氧原子取代氮原子和氫原子，氧化聚矽氮烷之SixNyHz基團，以形成富氧材料，例如氧化矽和二氧化矽。
請參照第2F圖，在形成氧化矽層220之後，氧化矽層220可進行化學機械研磨、回蝕刻製程或類似的技術，移除部份之氧化矽層，使溝槽206中的填充物與基底202之表面同水平，完成溝槽隔離結構222。另外，閘極或其它已知的結構可以本技術領域熟知的技術製作。根據上述，第2F圖之淺溝槽隔離結構222包括基底202、第一墊層212、第二墊層214、溝槽206、氮化矽襯層216和氧化矽層220。
本發明實施例增加聚矽氮烷和氮化矽間黏著性的方法可處理氮化矽襯層，使其與聚矽氮烷塗佈層有較強的鍵結，因此可解決後續去除玻璃或濕蝕刻製程產生凹痕(divot)的問題。
雖然本發明已以較佳實施例發明如上，然其並非用以限定本發明，任何熟習此技藝者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
102‧‧‧基底
104‧‧‧溝槽
106‧‧‧氮化矽襯層
108‧‧‧墊層
202‧‧‧基底
204‧‧‧晶圓部分
206‧‧‧溝槽
208‧‧‧底部表面
210‧‧‧側壁
212‧‧‧第一墊層
214‧‧‧第二墊層
216‧‧‧氮化矽襯層
218‧‧‧聚矽氮烷塗佈層
220‧‧‧氧化矽層
222‧‧‧槽隔離結構
第1圖顯示形成溝槽隔離物的問題。
第2A圖~第2F圖揭示本發明一實施例形成溝槽隔離結構之方法。
202‧‧‧基底
208‧‧‧底部表面
210‧‧‧側壁
212‧‧‧第一墊層
214‧‧‧第二墊層
216‧‧‧氮化矽襯層
Claims (17)
- 一種增加聚矽氮烷和氮化矽間黏著性的方法，包括：提供一基底，包括一溝槽；形成一氮化矽襯層於該溝槽之底部和側壁；對該氮化矽襯層進行一處理製程，產生具有OH基團的親水表面，以增加氮化矽襯層和後續步驟形成的聚矽氮烷塗佈層的黏著性；及於該溝槽之氮化矽襯層上形成一聚矽氮烷塗佈層，其中對該氮化矽襯層進行一處理製程之步驟包括：使用酸性溶液或鹼性溶液處理該氮化矽襯層；其中該酸性溶液包括氯化氫或HPM(HCl/H2O2/H2O)，且該鹼性溶液包括氫氧化鉀KOH、氫氧化四甲基銨溶液tetramethylammonium hydroxide(TMAH)或APM(NH4OH/H2O2/H2O)。
- 如申請專利範圍第1項所述之增加聚矽氮烷和氮化矽間黏著性的方法，其中該HPM具有以下比例：HCl/H2O2/H2O=1/2/50。
- 如申請專利範圍第1項所述之增加聚矽氮烷和氮化矽間黏著性的方法，其中該APM具有以下比例：NH4OH/H2O2/H2O=1/1/50。
- 如申請專利範圍第1項所述之增加聚矽氮烷和氮化矽間黏著性的方法，其中該處理製程之製程溫度為室溫至100℃。
- 如申請專利範圍第1項所述之增加聚矽氮烷和氮化矽間黏著性的方法，其中對該氮化矽襯層進行一處理製程 之步驟包括：使用蒸氣處理該氮化矽襯層。
- 如申請專利範圍第5項所述之增加聚矽氮烷和氮化矽間黏著性的方法，其中該蒸氣處理製程之溫度為100℃~200℃。
- 如申請專利範圍第5項所述之增加聚矽氮烷和氮化矽間黏著性的方法，更包括平坦化該氧化矽層。
- 如申請專利範圍第1項所述之增加聚矽氮烷和氮化矽間黏著性的方法，更包括加熱該基底，氧化該聚矽氮烷塗佈層，形成氧化矽層。
- 一種形成溝槽隔離結構之方法，包括：提供一基底；於該基底中形成一溝槽；形成一氮化矽襯層於該溝槽之底部和側壁；對該氮化矽襯層進行一處理製程，產生具有OH基團的親水表面，以增加氮化矽襯層和後續步驟形成的聚矽氮烷塗佈層的黏著性；及於該溝槽之氮化矽襯層上形成一聚矽氮烷塗佈層；加熱該基底，氧化該聚矽氮烷塗佈層，以形成一氧化矽層；及平坦化該氧化矽層。
- 如申請專利範圍第9項所述之形成溝槽隔離結構之方法，其中對該氮化矽襯層進行一處理製程之步驟包括：使用去離子(DI)水、酸性溶液或鹼性溶液處理該氮化矽襯層。
- 如申請專利範圍第10項所述之形成溝槽隔離結構 之方法，其中該該酸性溶液包括氯化氫HCl或HPM(HCl/H2O2/H2O)。
- 如申請專利範圍第11項所述之形成溝槽隔離結構之方法，其中該HPM具有以下比例：HCl/H2O2/H2O=1/2/50。
- 如申請專利範圍第10項所述之形成溝槽隔離結構之方法，其中該鹼性溶液包括氫氧化鉀KOH、氫氧化四甲基銨溶液tetramethylammonium hydroxide(TMAH)或APM(NH4OH/H2O2/H2O)。
- 如申請專利範圍第13項所述之形成溝槽隔離結構之方法，其中該APM具有以下比例：NH4OH/H2O2/H2O=1/1/50。
- 如申請專利範圍第9項所述之形成溝槽隔離結構之方法，其中該處理製程之製程溫度為室溫至100℃。
- 如申請專利範圍第9項所述之形成溝槽隔離結構之方法，其中對該氮化矽襯層進行一處理製程之步驟包括：使用蒸氣處理該氮化矽襯層。
- 如申請專利範圍第16項所述之形成溝槽隔離結構之方法，其中該蒸氣處理製程之溫度為100℃~200℃。
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