TWI497683B - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
TWI497683B
TWI497683B TW101145500A TW101145500A TWI497683B TW I497683 B TWI497683 B TW I497683B TW 101145500 A TW101145500 A TW 101145500A TW 101145500 A TW101145500 A TW 101145500A TW I497683 B TWI497683 B TW I497683B
Authority
TW
Taiwan
Prior art keywords
impurity diffusion
diffusion region
region
conductivity type
semiconductor device
Prior art date
Application number
TW101145500A
Other languages
English (en)
Chinese (zh)
Other versions
TW201332082A (zh
Inventor
Masaki Okuyama
Hisakatsu Sato
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of TW201332082A publication Critical patent/TW201332082A/zh
Application granted granted Critical
Publication of TWI497683B publication Critical patent/TWI497683B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW101145500A 2011-12-09 2012-12-04 Semiconductor device TWI497683B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011269891A JP5849670B2 (ja) 2011-12-09 2011-12-09 半導体装置

Publications (2)

Publication Number Publication Date
TW201332082A TW201332082A (zh) 2013-08-01
TWI497683B true TWI497683B (zh) 2015-08-21

Family

ID=48573842

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101145500A TWI497683B (zh) 2011-12-09 2012-12-04 Semiconductor device

Country Status (5)

Country Link
US (2) US9312329B2 (enExample)
JP (1) JP5849670B2 (enExample)
CN (1) CN103988305A (enExample)
TW (1) TWI497683B (enExample)
WO (1) WO2013084451A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6894715B2 (ja) * 2017-01-31 2021-06-30 ラピスセミコンダクタ株式会社 半導体装置
JP2019029399A (ja) * 2017-07-26 2019-02-21 パナソニックＩｐマネジメント株式会社 撮像装置
US12495617B2 (en) * 2023-02-17 2025-12-09 Vanguard International Semiconductor Corporation Semiconductor structure and electrostatic discharge protection device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010021228A (ja) * 2008-07-09 2010-01-28 Toshiba Corp 半導体装置

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59217368A (ja) * 1983-05-26 1984-12-07 Hitachi Ltd 集積回路とその製造方法
KR100190008B1 (ko) * 1995-12-30 1999-06-01 윤종용 반도체 장치의 정전하 보호 장치
JP3472911B2 (ja) 1997-10-31 2003-12-02 セイコーエプソン株式会社 半導体装置
JP3123489B2 (ja) 1997-11-20 2001-01-09 日本電気株式会社 半導体集積回路における静電保護回路及びその製造方法
TW399337B (en) 1998-06-09 2000-07-21 Koninkl Philips Electronics Nv Semiconductor device
JP3317345B2 (ja) 1999-07-23 2002-08-26 日本電気株式会社 半導体装置
JP3430080B2 (ja) * 1999-10-08 2003-07-28 Ｎｅｃエレクトロニクス株式会社 半導体装置及びその製造方法
US6489653B2 (en) * 1999-12-27 2002-12-03 Kabushiki Kaisha Toshiba Lateral high-breakdown-voltage transistor
JP3875460B2 (ja) * 2000-07-06 2007-01-31 株式会社東芝 半導体装置
KR100448925B1 (ko) 2002-03-11 2004-09-16 삼성전자주식회사 정전기 방전 보호를 위한 반도체 장치 및 그 제조 방법
KR100645039B1 (ko) 2003-12-15 2006-11-10 삼성전자주식회사 정전기 방전 보호 소자 및 그 제조방법
JP2006013450A (ja) * 2004-05-27 2006-01-12 Renesas Technology Corp 半導体装置およびその製造方法
JP4854934B2 (ja) * 2004-06-14 2012-01-18 ルネサスエレクトロニクス株式会社 静電気放電保護素子
JP4703196B2 (ja) * 2005-01-18 2011-06-15 株式会社東芝 半導体装置
CN100446080C (zh) 2005-06-30 2008-12-24 精工爱普生株式会社 集成电路装置及电子设备
US7190030B1 (en) * 2005-09-07 2007-03-13 United Microelectronics Corp. Electrostatic discharge protection structure
JP2008004703A (ja) 2006-06-21 2008-01-10 Ricoh Co Ltd 半導体装置及び半導体装置の製造方法
JP5165321B2 (ja) * 2007-09-28 2013-03-21 オンセミコンダクター・トレーディング・リミテッド 静電気破壊保護素子、静電気破壊保護回路、半導体装置および半導体装置の製造方法
JP5203850B2 (ja) 2008-08-22 2013-06-05 パナソニック株式会社 静電気保護素子
JP5349885B2 (ja) * 2008-09-30 2013-11-20 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010021228A (ja) * 2008-07-09 2010-01-28 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
US9859359B2 (en) 2018-01-02
JP5849670B2 (ja) 2016-02-03
CN103988305A (zh) 2014-08-13
WO2013084451A1 (ja) 2013-06-13
JP2013122945A (ja) 2013-06-20
US20140312462A1 (en) 2014-10-23
TW201332082A (zh) 2013-08-01
US9312329B2 (en) 2016-04-12
US20160204095A1 (en) 2016-07-14

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Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees