JP5849670B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5849670B2
JP5849670B2 JP2011269891A JP2011269891A JP5849670B2 JP 5849670 B2 JP5849670 B2 JP 5849670B2 JP 2011269891 A JP2011269891 A JP 2011269891A JP 2011269891 A JP2011269891 A JP 2011269891A JP 5849670 B2 JP5849670 B2 JP 5849670B2
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JP
Japan
Prior art keywords
impurity diffusion
diffusion region
region
conductivity type
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2011269891A
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English (en)
Japanese (ja)
Other versions
JP2013122945A (ja
JP2013122945A5 (enExample
Inventor
奥山　正樹
正樹 奥山
久克 佐藤
久克 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2011269891A priority Critical patent/JP5849670B2/ja
Priority to CN201280060455.1A priority patent/CN103988305A/zh
Priority to US14/358,982 priority patent/US9312329B2/en
Priority to PCT/JP2012/007661 priority patent/WO2013084451A1/ja
Priority to TW101145500A priority patent/TWI497683B/zh
Publication of JP2013122945A publication Critical patent/JP2013122945A/ja
Publication of JP2013122945A5 publication Critical patent/JP2013122945A5/ja
Application granted granted Critical
Publication of JP5849670B2 publication Critical patent/JP5849670B2/ja
Priority to US15/049,839 priority patent/US9859359B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2011269891A 2011-12-09 2011-12-09 半導体装置 Expired - Fee Related JP5849670B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2011269891A JP5849670B2 (ja) 2011-12-09 2011-12-09 半導体装置
US14/358,982 US9312329B2 (en) 2011-12-09 2012-11-29 Semiconductor device
PCT/JP2012/007661 WO2013084451A1 (ja) 2011-12-09 2012-11-29 半導体装置
CN201280060455.1A CN103988305A (zh) 2011-12-09 2012-11-29 半导体装置
TW101145500A TWI497683B (zh) 2011-12-09 2012-12-04 Semiconductor device
US15/049,839 US9859359B2 (en) 2011-12-09 2016-02-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011269891A JP5849670B2 (ja) 2011-12-09 2011-12-09 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2015174454A Division JP2015216410A (ja) 2015-09-04 2015-09-04 半導体装置

Publications (3)

Publication Number Publication Date
JP2013122945A JP2013122945A (ja) 2013-06-20
JP2013122945A5 JP2013122945A5 (enExample) 2015-01-29
JP5849670B2 true JP5849670B2 (ja) 2016-02-03

Family

ID=48573842

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011269891A Expired - Fee Related JP5849670B2 (ja) 2011-12-09 2011-12-09 半導体装置

Country Status (5)

Country Link
US (2) US9312329B2 (enExample)
JP (1) JP5849670B2 (enExample)
CN (1) CN103988305A (enExample)
TW (1) TWI497683B (enExample)
WO (1) WO2013084451A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6894715B2 (ja) * 2017-01-31 2021-06-30 ラピスセミコンダクタ株式会社 半導体装置
JP2019029399A (ja) * 2017-07-26 2019-02-21 パナソニックＩｐマネジメント株式会社 撮像装置
US12495617B2 (en) * 2023-02-17 2025-12-09 Vanguard International Semiconductor Corporation Semiconductor structure and electrostatic discharge protection device

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59217368A (ja) * 1983-05-26 1984-12-07 Hitachi Ltd 集積回路とその製造方法
KR100190008B1 (ko) * 1995-12-30 1999-06-01 윤종용 반도체 장치의 정전하 보호 장치
JP3472911B2 (ja) 1997-10-31 2003-12-02 セイコーエプソン株式会社 半導体装置
JP3123489B2 (ja) 1997-11-20 2001-01-09 日本電気株式会社 半導体集積回路における静電保護回路及びその製造方法
TW399337B (en) 1998-06-09 2000-07-21 Koninkl Philips Electronics Nv Semiconductor device
JP3317345B2 (ja) 1999-07-23 2002-08-26 日本電気株式会社 半導体装置
JP3430080B2 (ja) * 1999-10-08 2003-07-28 Ｎｅｃエレクトロニクス株式会社 半導体装置及びその製造方法
US6489653B2 (en) * 1999-12-27 2002-12-03 Kabushiki Kaisha Toshiba Lateral high-breakdown-voltage transistor
JP3875460B2 (ja) * 2000-07-06 2007-01-31 株式会社東芝 半導体装置
KR100448925B1 (ko) 2002-03-11 2004-09-16 삼성전자주식회사 정전기 방전 보호를 위한 반도체 장치 및 그 제조 방법
KR100645039B1 (ko) 2003-12-15 2006-11-10 삼성전자주식회사 정전기 방전 보호 소자 및 그 제조방법
JP2006013450A (ja) * 2004-05-27 2006-01-12 Renesas Technology Corp 半導体装置およびその製造方法
JP4854934B2 (ja) * 2004-06-14 2012-01-18 ルネサスエレクトロニクス株式会社 静電気放電保護素子
JP4703196B2 (ja) * 2005-01-18 2011-06-15 株式会社東芝 半導体装置
CN100446080C (zh) 2005-06-30 2008-12-24 精工爱普生株式会社 集成电路装置及电子设备
US7190030B1 (en) * 2005-09-07 2007-03-13 United Microelectronics Corp. Electrostatic discharge protection structure
JP2008004703A (ja) 2006-06-21 2008-01-10 Ricoh Co Ltd 半導体装置及び半導体装置の製造方法
JP5165321B2 (ja) * 2007-09-28 2013-03-21 オンセミコンダクター・トレーディング・リミテッド 静電気破壊保護素子、静電気破壊保護回路、半導体装置および半導体装置の製造方法
JP4595002B2 (ja) 2008-07-09 2010-12-08 株式会社東芝 半導体装置
JP5203850B2 (ja) 2008-08-22 2013-06-05 パナソニック株式会社 静電気保護素子
JP5349885B2 (ja) * 2008-09-30 2013-11-20 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

Also Published As

Publication number Publication date
US9859359B2 (en) 2018-01-02
CN103988305A (zh) 2014-08-13
WO2013084451A1 (ja) 2013-06-13
JP2013122945A (ja) 2013-06-20
TWI497683B (zh) 2015-08-21
US20140312462A1 (en) 2014-10-23
TW201332082A (zh) 2013-08-01
US9312329B2 (en) 2016-04-12
US20160204095A1 (en) 2016-07-14

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