TWI478200B - 佈植碳離子之方法 - Google Patents

佈植碳離子之方法 Download PDF

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TWI478200B
TWI478200B TW099124371A TW99124371A TWI478200B TW I478200 B TWI478200 B TW I478200B TW 099124371 A TW099124371 A TW 099124371A TW 99124371 A TW99124371 A TW 99124371A TW I478200 B TWI478200 B TW I478200B
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Oleg Byl
Robert Kaim
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Description

佈植碳離子之方法 【交互參照之相關申請案】
本發明在此依35 U.S.C 119主張美國專利臨時申請案61/227,875號之優先權，其於2009年7月23日由Joseph D. Sweeney、Oleg Byl及Robert Kaim等人提出申請，發明名稱為”Carbon Materials for Carbon Implantation”。此美國臨時申請案61/227,875號在此以全文併入作為參考。
本發明所揭露者是關於離子佈植方法及系統，且更詳言之，是關於用於在此類系統中碳離子佈植的碳材料。
離子佈植用於積體電路製造中，以準確地將受控制量的摻質雜質導入半導體晶圓，且其為微電子/半導體製造中一項製程。在此類佈植系統中，離子源離子化期望的摻質元素氣體，而該等離子從該離子源以期望能量的離子束之型式萃取。藉由橫跨適合形狀的萃取電極施加高電壓而達成萃取，該等電極結合用以使萃取離子束通過的穿孔。離子束隨後受導引至工件(諸如半導體晶圓)的表面，以將工件佈植摻質元素。離子束的離子滲透工件表面以形成期望導電度的區域。
數種型式的離子源用於離子佈植系統中，其包括：Freeman及Bernas型式(該等形式利用熱電極並且藉由電弧賦能)、微波形式(其使用電磁管)、非直接加熱陰極(IHC)源、及PF電漿源，所有形式皆一般於真空中操作。在任何系統中，離子源藉由將電子導入以摻質氣體(一般稱之為原料氣體)填充的真空電弧腔室(後文中稱之為腔室)而生成離子。摻質氣體中電子與原子及分子的碰撞造成生成由正摻質離子及負摻質離子構成的離子化電漿。具有負偏壓或正偏壓的萃取電極將各容許正離子或負離子通過穿孔成為準直離子束，其朝目標材料加速。
在許多離子佈植系統中，已知為抑制擴散的碳受佈植進入目標材料，以於積體電路裝置中製造期望的效應。碳大體上從諸如一氧化碳或二氧化碳的原料氣體中佈植。使用一氧化碳或二氧化碳氣體可造成離子佈植器工具的電漿源(電弧腔室)內金屬表面氧化，且亦可造成碳殘餘物沉積於電絕緣體表面。該等現象降低了佈植器工具的性能，因而導致需要執行頻繁的維修。氧化可造成佈植製程中的不佳效能。
預防性維修(PM)的頻率及時間歷程是離子佈植工具中的一項性能之因子。論及大體上的趨勢，工具PM頻率及時間歷程應減少。需要最多維修的離子佈植器工具之部件包括：離子源，視操作條件而定，其大體上在操作約50至300小時後就需維修；萃取電極及高電壓絕緣體，其通常在操作數百小時後要清潔；以及與工具關連的真空系統的真空線路與泵。此外，基於常規，離子源的燈絲經常要置換。
理想上，投料至電弧腔室的原料分子可離子化並且片段化，而無實質上與電弧本身或任何其他離子佈植器部件交互作用。實際上，原料氣體的離子化以及片段化可造成此類非期望的效應，如電弧腔室部件蝕刻或濺射、於電弧腔室表面的沉積、電弧腔室壁材料重新分佈等。詳言之，使用一氧化碳或二氧化碳氣體可造成碳沉積於腔室內。此可為分配器對離子束的不穩定性，且最終可引發離子源早期失效。殘餘物亦形成於離子佈植器工具之高電壓部件上(諸如萃取電極的表面或者源絕緣器)，引發能量上的高電壓放電。此類放電為另一分配器對離子束的不穩定性，由該等電光釋放的能量可損害敏感性的電子部件，導致增加設備失效以及低劣的平均故障間隔時間(MTBF)。
在非期望沉積的另一例子中，各種材料(諸如鎢)可於延展的離子佈植製程期間堆積於部件上。一旦足夠的鎢堆積，用於維持足以吻合離子束電流設定點溫度之功率會無法支持。其引發離子束電流損失，導致置換離子源之狀況。所造成的性能劣化以及離子源壽命短少減少了離子佈植器工具的產率。
尚有一個離子源失效的肇因，其為材料的腐蝕(或濺射)。舉例而言，諸如鎢的金屬材料(例如IHC源的陰極或Bernas源之燈絲)藉由電弧腔室的電漿中之離子而濺射。因為濺射是由離子中最重的離子所主宰，該濺射效應在離子質量增加時會更惡化。事實上，材料的連續濺射會使陰極薄化，最終導致在陰極中形成孔洞(在IHC的實例中為陰極擊穿(punch-through))，或在Bernas源的實例中，在燈絲中生成開口。結果，離子源的性能及壽命大幅減少。因此，此技術繼續找尋能在維持材料於陰極上堆積與腐蝕之間的平衡的方法，以延長離子源壽命。
在一態樣中，本發明所揭露者是關於一種將碳離子佈植進入目標基材的方法。該方法包含：離子化一含碳摻質材料以產生一具有離子的電漿；以及將該等離子佈植進入該目標基材。該含碳摻質材料具有Cw Fx Oy Hz 之化學式，其中若w=1，而x>0，則y及z可取任何數值，且其中若w>1，而x或y>0，則z可取任何數值。
另一態樣中，本發明所揭露者關於另一種將碳離子佈植進入目標基材的方法。該方法包含：離子化一含碳摻質材料以產生一具有離子的電漿；將額外的氣體或一系列氣體與該含碳摻質材料共流；以及將該等離子佈植進入該目標基材。該含碳摻質材料具有Cw Fx Oy Hz 之化學式，其中w、x、y及z如前文所界定。
另一態樣中，本發明關於一種改善離子佈植器工具效能的方法。該方法包含：選擇化學式為Cw Fx Oy Hz 之一含碳摻質材料，以用於一腔室中的該離子佈植器工具，其中w、x、y及z如前文所界定；離子化該含碳摻質材料；以及使用該離子佈植器工具從該離子化含碳摻質材料佈植一碳離子。選擇化學式為Cw Fx Oy Hz 之材料減少了在佈植該碳離子之後腔室中所沉積的碳及/或非碳元素的量。以此做法，離子源的性能會最佳化。
根據隨後的說明書內容及所附的申請專利範圍，將可更全面地透徹明瞭本發明所揭露的其他態樣、特徵及實施例。
根據本發明所揭露者，碳離子從原料源材料透過離子佈植製程佈植進入基材的目標材料。在一示範性實施例中，離子源藉由將電子導入以作為原料材料的含碳摻質氣體之真空電弧腔室產生碳離子。腔室具有鎢壁，燈絲電極以及推斥電極架設於該等壁上，並且藉由陶瓷絕緣體隔離該等壁。電子與含碳摻質氣體中分子的碰撞造成生成由正碳離子所構成的離子化電漿。該等離子隨後準直化成離子束，該離子束朝目標材料加速。該離子束可受導引透過其中具有複數開口的罩幕以將碳離子用期望的組態佈植。本發明所揭露者不限於此考量，而其他佈植碳離子的方式皆在本發明所揭露的範疇內。再者，本發明所揭露者不限於佈植碳離子，而任何非碳的離子(或除了碳離子之外之離子)可被選擇用於佈植。
在任何實施例中，為了產生碳離子，含碳摻質材料具有化學式Cw Fx Oy Hz ，其中若w=1，而x>0，則y及z可取任何數值，且其中若w>1，而x或y>0，則z可取任何數值。碳原子從該分子之其餘原子分離，因而造成包括正碳離子的離子化電漿。正碳離子可為單個，或者他們可形成二個以上的碳原子之集團。或者，可形成Ca Fb Oc Hd + 形式(其中a>0且b、c及d可具有任何值)的分子離子以同時共佈植多重原子物料。舉例而言，佈植諸如CF+ 的離子可消除稍後的F+ 佈植物。對於共佈植物料對積體電路品質或性能妥協折衷的實例而言，碳摻質材料可用於產生用於佈植的非碳離子。範例可為佈植F+ 。其優點為可不需要含氟的第二摻質材料。
C、F、O及H(如以w、x、y及z所標示者)的比率經挑選以使離子源壽命及離子束電流最佳化。當使用碳達成特定積體電路裝置特徵時，碳將會沉積於離子佈植器的離子源腔室內，引發電路短路或者粒子生成。此外，碳能引發陰極(IHC源)或燈絲(Bernas源)濺射，造成離子源壽命短少。存在摻質材料內的氧藉由氧化碳沉積物以形成CO或CO2 以幫助減少碳沉積。然而，氧亦能氧化離子源部件，例如陰極或燈絲。氧化該等部件可劣化離子佈植工具的性能，因而導致需要頻繁維修。藉由添加氟至離子源，可減少陰極或燈絲的氧化。然而，氟亦能與電弧腔室的金屬壁(通常是鎢或鉬)反應，形成化學式為WF或MoFx 之氣體，其中x=1-6。當該等氣體接觸陰極或燈絲，其傾向與鎢反應並且沉積鎢。為利於能幫助平衡由於電漿內離子所造成的濺射，可期望添加一些氫至該分子中，以平衡鎢沉積速率(氫將限制氟的能力，以免與金屬壁反應而形成隨後引發金屬沉積於陰極或燈絲上的金屬氟化物)。
在一實施例中，Cw Fx Oy Hz 源氣體包含COF2 。當COF2 用做為源氣體時，分子在電弧腔室中離子化，而C+ 離子透過質量分析分離，隨後佈植進入目標材料。在電弧腔室內，O和F離子和中性分子亦存在。氧助於減少碳沉積物，而氟功用為使陰極或燈絲免於形成氧化物表面層。以此方法，離子源的性能大幅改善。
本發明所揭露者亦考量到將Cw Fx Oy Hz 與氧或含氧氣體(諸如空氣)同時流入以修改或控制C、F、O及H之比率，因而進一步修改或控制佈植的碳離子量，以及最佳化佈植的碳離子與氧化物形成之間的折衷。詳言之，Cw Fx Oy Hz 可與COF2 、CO2 、CO或任何其他含氧氣體共流。不囿於理論，應考量到共流COF2 或類似氣體平衡碳離子的沉積與電弧腔室之塗佈及蝕刻。
本發明所揭露者額外考量到同時流入Cw Fx Oy Hz 材料以及諸如氟與氫的氣體，或者以諸如氮、氬、氙、氦及前述氣體之組合等惰性氣體稀釋。使用惰性氣體助於在流入摻質氣體時維持電漿。
藉由調整含碳摻質氣體(其具有化學式Cw Fx Oy Hz 且視情況與COF2 、CO2 、CO(或其他含碳分子)、氟、氫、氮或氬等共流該摻質氣體)中的元素比率以及從含碳摻質氣體產生碳離子，對於腔室內的其沉積，佈植的碳量最大化且非碳元素的量最小化。以此方式，佈植器工具的效能可被改善。此外，此類工具的停工時間(為了維修及清潔等)亦可減少。
再者，Cw Fx Oy Hz 材料可同時與高達四種額外氣體流入。此類氣體包括但不限於：(1)CO+F2 +H2 +O2 ；(2)COF2 +H2 ；(3)CF4 +CH4 +O2 。本發明所揭露者不限於此考量，而其他氣體皆於本發明之範疇內。
儘管在此所揭露者已包括各種詳細實施例，熟習此技術者將瞭解到，在不背離本發明之範疇之情況下，可製做各種變更且可以等效物取代本發明之元素。此外，在不背離本發明之基本範疇之情況下，可製做修改形式以使特定狀況條件或材料適於本發明之教示。因此，其欲在此所揭露者不限於在上文說明書中所揭露的特定實施例，而在此所揭露者將包括所有落於前述說明書之精神與範疇內之實施例。

Claims (16)

  1. 一種將一碳離子佈植進入一目標基材的方法，其包含以下步驟：離子化一含碳摻質材料以產生一包含離子的電漿；以及將該等離子佈植進入該目標基材；其中該含碳摻質材料包含CO與CO2 之至少一者，以及其中該含碳摻質材料係在以下氣體之存在下被離子化，該氣體包括選自由F2 、COF2 與CF4 所組成之群組中之至少一氣體。
  2. 如請求項1所述之方法，其中該含碳摻質材料包含CO。
  3. 如請求項2所述之方法，其中該至少一氣體包含F2 且該氣體進一步包含O2 。
  4. 如請求項2所述之方法，其中該至少一氣體包含F2 且該氣體進一步包含H2 與O2 。
  5. 如請求項1所述之方法，其中該至少一氣體包含COF2 且該氣體進一步包含H2 。
  6. 如請求項2所述之方法，其中該氣體進一步包含Xe與H2 。
  7. 如請求項1所述之方法，其中該至少一氣體包含COF2 。
  8. 一種將碳離子佈植進入一目標基材的方法，其包含以下步驟：離子化一含碳摻質材料以產生一包含離子的電漿；將一額外的氣體或一系列氣體與該含碳摻質材料共流；以及將該等離子佈植進入該目標基材；其中該含碳摻質材料包含CO與CO2 之至少一者，以及其中該額外的氣體或一系列氣體包含F2 、COF2 與CF4 之一者或多者。
  9. 如請求項8所述之方法，其中該含碳摻質材料包含CO。
  10. 如請求項9所述之方法，其中該額外的氣體或一系列氣體包含F2 與額外地O2 。
  11. 如請求項9所述之方法，其中該額外的氣體或一系列氣體包含F2 與額外地H2 及O2 。
  12. 如請求項9所述之方法，其中該額外的氣體或一系列氣體包含COF2 與額外地H2 。
  13. 如請求項9所述之方法，其中該額外的氣體或一系列氣體額外地包含Xe與H2 。
  14. 如請求項8所述之方法，其中該額外的氣體或一系列 氣體包含COF2 。
  15. 一種將碳佈植進入一目標基材的方法，其包含以下步驟：離子化包含CO、CO2 與COF2 之一氣體混合物，以產生一具有含碳離子的電漿；以及將該等含碳離子佈植進入該目標基材。
  16. 一種將碳佈植進入一目標基材的方法，其包含以下步驟：將包含CO、CO2 與COF2 之氣體共流至一離子佈植器；將在該離子佈植器中之該等氣體離子化，以形成含碳離子；以及將該等含碳離子佈植進入該目標基材。
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US20110021011A1 (en) 2011-01-27
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US20170069499A1 (en) 2017-03-09
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