TWI476070B - 具備用於研磨墊之溫度調整器之研磨裝置 - Google Patents
具備用於研磨墊之溫度調整器之研磨裝置 Download PDFInfo
- Publication number
- TWI476070B TWI476070B TW101104875A TW101104875A TWI476070B TW I476070 B TWI476070 B TW I476070B TW 101104875 A TW101104875 A TW 101104875A TW 101104875 A TW101104875 A TW 101104875A TW I476070 B TWI476070 B TW I476070B
- Authority
- TW
- Taiwan
- Prior art keywords
- liquid
- pad
- polishing
- passage
- polishing pad
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims description 213
- 239000007788 liquid Substances 0.000 claims description 268
- 239000000758 substrate Substances 0.000 claims description 57
- 238000005192 partition Methods 0.000 claims description 18
- 238000004140 cleaning Methods 0.000 claims description 16
- 238000004891 communication Methods 0.000 claims description 15
- 230000007246 mechanism Effects 0.000 claims description 15
- 230000002093 peripheral effect Effects 0.000 claims description 12
- 239000012212 insulator Substances 0.000 claims description 7
- 125000006850 spacer group Chemical group 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 12
- 229910010271 silicon carbide Inorganic materials 0.000 description 11
- 230000005855 radiation Effects 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 230000009471 action Effects 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000009529 body temperature measurement Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/015—Temperature control
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011039586A JP5628067B2 (ja) | 2011-02-25 | 2011-02-25 | 研磨パッドの温度調整機構を備えた研磨装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201249593A TW201249593A (en) | 2012-12-16 |
| TWI476070B true TWI476070B (zh) | 2015-03-11 |
Family
ID=46719303
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101104875A TWI476070B (zh) | 2011-02-25 | 2012-02-15 | 具備用於研磨墊之溫度調整器之研磨裝置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9475167B2 (cg-RX-API-DMAC7.html) |
| JP (1) | JP5628067B2 (cg-RX-API-DMAC7.html) |
| KR (2) | KR101522070B1 (cg-RX-API-DMAC7.html) |
| TW (1) | TWI476070B (cg-RX-API-DMAC7.html) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI783069B (zh) * | 2017-10-31 | 2022-11-11 | 日商荏原製作所股份有限公司 | 用以調整研磨墊之研磨面溫度的熱交換器、具備該熱交換器之研磨裝置、使用該熱交換器之基板的研磨方法、以及記錄了用以調整研磨墊之研磨面溫度的程式的電腦可讀取記錄媒介 |
| TWI819009B (zh) * | 2018-06-27 | 2023-10-21 | 美商應用材料股份有限公司 | 化學機械研磨設備及化學機械研磨方法 |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5628067B2 (ja) * | 2011-02-25 | 2014-11-19 | 株式会社荏原製作所 | 研磨パッドの温度調整機構を備えた研磨装置 |
| JP5695963B2 (ja) * | 2011-04-28 | 2015-04-08 | 株式会社荏原製作所 | 研磨方法 |
| JP5927129B2 (ja) * | 2013-01-31 | 2016-05-25 | 株式会社荏原製作所 | 研磨装置 |
| JP6030980B2 (ja) * | 2013-03-26 | 2016-11-24 | 株式会社荏原製作所 | 研磨装置温度制御システム、及び研磨装置 |
| JP6161999B2 (ja) | 2013-08-27 | 2017-07-12 | 株式会社荏原製作所 | 研磨方法および研磨装置 |
| JP6139420B2 (ja) * | 2014-01-10 | 2017-05-31 | 株式会社東芝 | 研磨装置および研磨方法 |
| SG10201503374QA (en) * | 2014-04-30 | 2015-11-27 | Ebara Corp | Substrate Polishing Apparatus |
| JP6263092B2 (ja) * | 2014-06-23 | 2018-01-17 | 株式会社荏原製作所 | 研磨パッドの温度調節システムおよびこれを備えた基板処理装置 |
| US9742977B2 (en) | 2014-09-02 | 2017-08-22 | Apple Inc. | Camera remote control |
| JP6580939B2 (ja) | 2015-10-20 | 2019-09-25 | 株式会社荏原製作所 | 研磨装置 |
| US10414018B2 (en) * | 2016-02-22 | 2019-09-17 | Ebara Corporation | Apparatus and method for regulating surface temperature of polishing pad |
| JP2018122406A (ja) * | 2017-02-02 | 2018-08-09 | 株式会社荏原製作所 | 研磨パッドの表面温度を調整するための熱交換器、研磨装置、研磨方法、およびコンピュータプログラムを記録した記録媒体 |
| JP6923342B2 (ja) * | 2017-04-11 | 2021-08-18 | 株式会社荏原製作所 | 研磨装置、及び、研磨方法 |
| JP6975078B2 (ja) * | 2018-03-15 | 2021-12-01 | キオクシア株式会社 | 半導体製造装置および半導体装置の製造方法 |
| US11787007B2 (en) * | 2018-06-21 | 2023-10-17 | Illinois Tool Works Inc. | Methods and apparatus to control a fluid dispenser on a metallurgical specimen preparation machine |
| JP7066599B2 (ja) | 2018-11-28 | 2022-05-13 | 株式会社荏原製作所 | 温度調整装置及び研磨装置 |
| TWI885783B (zh) | 2019-02-20 | 2025-06-01 | 美商應用材料股份有限公司 | 化學機械拋光裝置及化學機械拋光方法 |
| JP7240931B2 (ja) * | 2019-03-29 | 2023-03-16 | 株式会社荏原製作所 | 熱交換器の洗浄装置、および研磨装置 |
| US11628478B2 (en) | 2019-05-29 | 2023-04-18 | Applied Materials, Inc. | Steam cleaning of CMP components |
| TWI859239B (zh) | 2019-05-29 | 2024-10-21 | 美商應用材料股份有限公司 | 用於化學機械研磨系統的蒸氣處置站的設備及方法 |
| US11633833B2 (en) | 2019-05-29 | 2023-04-25 | Applied Materials, Inc. | Use of steam for pre-heating of CMP components |
| US11897079B2 (en) | 2019-08-13 | 2024-02-13 | Applied Materials, Inc. | Low-temperature metal CMP for minimizing dishing and corrosion, and improving pad asperity |
| TWI872101B (zh) | 2019-08-13 | 2025-02-11 | 美商應用材料股份有限公司 | Cmp溫度控制的裝置及方法 |
| KR102732023B1 (ko) | 2020-06-29 | 2024-11-20 | 어플라이드 머티어리얼스, 인코포레이티드 | Cmp에서의 온도 및 슬러리 유량 제어 |
| CN115066316B (zh) | 2020-06-29 | 2024-09-27 | 应用材料公司 | 控制化学机械抛光的蒸汽产生 |
| US11919123B2 (en) | 2020-06-30 | 2024-03-05 | Applied Materials, Inc. | Apparatus and method for CMP temperature control |
| US11577358B2 (en) | 2020-06-30 | 2023-02-14 | Applied Materials, Inc. | Gas entrainment during jetting of fluid for temperature control in chemical mechanical polishing |
| CN112629124A (zh) * | 2020-12-14 | 2021-04-09 | 新昌浙江工业大学科学技术研究院 | 力流变抛光液温度调控系统及方法 |
| CN112643523A (zh) * | 2020-12-17 | 2021-04-13 | 新昌浙江工业大学科学技术研究院 | 带有通孔的球形零件用的力流变抛光设备 |
| JP7695809B2 (ja) | 2021-03-25 | 2025-06-19 | 株式会社荏原製作所 | パッド温度調整装置、および研磨装置 |
| KR20220148106A (ko) | 2021-04-28 | 2022-11-04 | 에바라코포레이숀 | 연마 장치, 및 연마 방법 |
| CN117067124B (zh) * | 2023-10-13 | 2023-12-26 | 歌玛磨具南通有限公司 | 一种自冷却磨削砂轮 |
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| TW458849B (en) * | 1999-07-23 | 2001-10-11 | Applied Materials Inc | Temperature control device for chemical mechanical polishing |
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| JP2006074060A (ja) * | 2000-01-31 | 2006-03-16 | Shin Etsu Handotai Co Ltd | 研磨方法 |
| TW200910441A (en) * | 2007-06-13 | 2009-03-01 | Ebara Corp | Apparatus for heating or cooling a polishing surface of a polishing apparatus |
| TW200936311A (en) * | 2007-12-31 | 2009-09-01 | Advanced Micro Devices Inc | A CMP system and method using individually controlled temperature zones |
| TW201101385A (en) * | 2009-04-30 | 2011-01-01 | Applied Materials Inc | Temperature control of chemical mechanical polishing |
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| JP5628067B2 (ja) * | 2011-02-25 | 2014-11-19 | 株式会社荏原製作所 | 研磨パッドの温度調整機構を備えた研磨装置 |
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-
2011
- 2011-02-25 JP JP2011039586A patent/JP5628067B2/ja active Active
-
2012
- 2012-02-15 TW TW101104875A patent/TWI476070B/zh active
- 2012-02-16 US US13/397,908 patent/US9475167B2/en active Active
- 2012-02-23 KR KR1020120018406A patent/KR101522070B1/ko active Active
-
2015
- 2015-04-17 KR KR1020150054196A patent/KR101704187B1/ko active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW396085B (en) * | 1997-07-16 | 2000-07-01 | Ind Tech Res Inst | Method and apparatus for chemical mechanical polishing (CMP) with temperature compensation |
| TW458849B (en) * | 1999-07-23 | 2001-10-11 | Applied Materials Inc | Temperature control device for chemical mechanical polishing |
| JP2006074060A (ja) * | 2000-01-31 | 2006-03-16 | Shin Etsu Handotai Co Ltd | 研磨方法 |
| TW200402351A (en) * | 2002-03-29 | 2004-02-16 | Lam Res Corp | Method and apparatus for heating polishing pad |
| TW200510122A (en) * | 2003-09-04 | 2005-03-16 | Taiwan Semiconductor Mfg Co Ltd | Warming-up system |
| TW200910441A (en) * | 2007-06-13 | 2009-03-01 | Ebara Corp | Apparatus for heating or cooling a polishing surface of a polishing apparatus |
| TW200936311A (en) * | 2007-12-31 | 2009-09-01 | Advanced Micro Devices Inc | A CMP system and method using individually controlled temperature zones |
| TW201101385A (en) * | 2009-04-30 | 2011-01-01 | Applied Materials Inc | Temperature control of chemical mechanical polishing |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI783069B (zh) * | 2017-10-31 | 2022-11-11 | 日商荏原製作所股份有限公司 | 用以調整研磨墊之研磨面溫度的熱交換器、具備該熱交換器之研磨裝置、使用該熱交換器之基板的研磨方法、以及記錄了用以調整研磨墊之研磨面溫度的程式的電腦可讀取記錄媒介 |
| TWI819009B (zh) * | 2018-06-27 | 2023-10-21 | 美商應用材料股份有限公司 | 化學機械研磨設備及化學機械研磨方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20120220196A1 (en) | 2012-08-30 |
| JP5628067B2 (ja) | 2014-11-19 |
| US9475167B2 (en) | 2016-10-25 |
| TW201249593A (en) | 2012-12-16 |
| KR101704187B1 (ko) | 2017-02-07 |
| JP2012176449A (ja) | 2012-09-13 |
| KR20120098455A (ko) | 2012-09-05 |
| KR20150048687A (ko) | 2015-05-07 |
| KR101522070B1 (ko) | 2015-05-20 |
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