JP5695963B2 - 研磨方法 - Google Patents
研磨方法 Download PDFInfo
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- JP5695963B2 JP5695963B2 JP2011101051A JP2011101051A JP5695963B2 JP 5695963 B2 JP5695963 B2 JP 5695963B2 JP 2011101051 A JP2011101051 A JP 2011101051A JP 2011101051 A JP2011101051 A JP 2011101051A JP 5695963 B2 JP5695963 B2 JP 5695963B2
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- 238000005498 polishing Methods 0.000 title claims description 537
- 238000000034 method Methods 0.000 title claims description 27
- 239000007788 liquid Substances 0.000 claims description 109
- 239000000758 substrate Substances 0.000 claims description 50
- 239000002002 slurry Substances 0.000 claims description 13
- 239000000112 cooling gas Substances 0.000 claims description 8
- 239000000654 additive Substances 0.000 claims description 7
- 230000000996 additive effect Effects 0.000 claims description 7
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 7
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 7
- 239000003507 refrigerant Substances 0.000 claims description 5
- 238000007664 blowing Methods 0.000 claims description 4
- 239000003595 mist Substances 0.000 claims description 4
- 238000005507 spraying Methods 0.000 claims description 4
- 239000003082 abrasive agent Substances 0.000 claims 1
- 239000002826 coolant Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 58
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 24
- 229910052802 copper Inorganic materials 0.000 description 24
- 239000010949 copper Substances 0.000 description 24
- 239000007789 gas Substances 0.000 description 18
- 238000001816 cooling Methods 0.000 description 16
- 238000010586 diagram Methods 0.000 description 13
- 238000002347 injection Methods 0.000 description 11
- 239000007924 injection Substances 0.000 description 11
- 239000006061 abrasive grain Substances 0.000 description 8
- 239000012530 fluid Substances 0.000 description 8
- 230000007423 decrease Effects 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/015—Temperature control
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
- B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
Description
このように、研磨液として、機械化学的な研磨作用をするセリア(酸化セリウム:CeO2)を砥粒として使用した、添加剤を含む研磨スラリを使用することで、研磨レートを高めることができる。
図1は、本発明の研磨方法に使用される研磨装置の概要を示す概要図である。図1に示すように、研磨装置10は、回転自在な研磨テーブル12と、研磨テーブル12の上面に貼付され表面を研磨面14aとした研磨パッド14と、半導体ウェーハ等の基板Wを保持して研磨面14aに向けて押圧する研磨ヘッド16と、研磨パッド14の上方に配置されて該研磨パッド14に研磨液18を供給する研磨液供給ノズル20を備えている。研磨液供給ノズル20は、研磨液供給源22から延びる研磨液供給ライン24に接続され、研磨液供給ライン24には、開度制御可能な流量制御弁26が介装されている。
なお、研磨パッド14の研磨面(表面)14aに継続的に供給される研磨液流量は、熱酸化膜の場合と同様に、研磨時間の経過に拘わらず常に一定に制御される。
図2に示すデータを基に、研磨液18として、セリアを砥粒として添加剤を含む研磨スラリを使用し、研磨テーブル12を100rpmで、研磨ヘッド16を107rpmでそれぞれ回転させながら、研磨ヘッド16で保持した基板Wを0.35kgf/cm2(5psi)の研磨圧力で研磨パッド14の研磨面14aに押圧して、基板Wの表面に形成した熱酸化膜を研磨する。
図3及び図4に示すデータを基に、研磨液18として、銅研磨用の研磨スラリを使用し、研磨テーブル12を60rpmで、研磨ヘッド16を31rpmでそれぞれ回転させながら、研磨ヘッド16で保持した基板Wを0.21kgf/cm2(3psi)の研磨圧力で研磨パッド14の研磨面14aに押圧して、基板Wの表面に形成した銅膜を研磨する。
12 研磨テーブル
14 研磨パッド
14a 研磨面(研磨パッドの表面)
16 研磨ヘッド
18 研磨液
20 研磨液供給ノズル
22 研磨液供給源
24 研磨液供給ライン
26 流量制御弁、
30 冷却ノズル
34 ガス供給ライン
36 圧力制御弁
38 流量計
40 温度計
42 制御部
Claims (6)
- 研磨パッドの表面に研磨液を供給しながら、研磨パッドの表面に基板を摺接させて該基板を研磨する研磨方法において、
研磨パッドの表面温度を制御することなく基板を研磨した時の研磨液供給流量と研磨レートとの第1の関係、前記研磨パッドの表面温度を制御しながら基板を研磨した時の研磨液供給流量と研磨レートとの第2の関係、及び前記研磨パッドの表面温度を制御しながら基板を研磨した時の前記研磨パッドの表面温度と研磨液供給流量との第3の関係を予め求めておき、
前記第1の関係及び前記第2の関係から、研磨パッドの表面温度を制御しながら基板を研磨した時の研磨レートが、研磨パッドの表面温度を制御することなく基板を研磨した時の研磨レートよりも高くなる研磨液の流量範囲を決定し、
前記第3の関係から、前記決定された流量範囲に対応する前記研磨パッドの表面温度の温度範囲を決定し、
前記研磨パッドの表面温度を前記決定された温度範囲内に制御しながら、前記決定された流量範囲内の流量で研磨液を前記研磨パッドの表面に継続的に供給することを特徴とする研磨方法。 - 20ml/min以上、200ml/min未満の範囲内の所定の流量で、研磨パッドの表面に研磨液を継続的に供給することを特徴とする請求項1記載の研磨方法。
- 50ml/min〜180ml/minの範囲内の所定の流量で、研磨パッドの表面に研磨液を継続的に供給することを特徴とする請求項1記載の研磨方法。
- 50ml/min〜175ml/minの範囲内の所定の流量で、研磨パッドの表面に研磨液を継続的に供給することを特徴とする請求項1記載の研磨方法。
- 前記研磨液は、砥粒としてセリアを使用した、添加剤を含む研磨スラリであることを特徴とする請求項1乃至4のいずれかに記載の研磨方法。
- 研磨パッドの表面温度の制御を、(1)研磨パッドに向けた圧縮空気の吹き付け、(2)冷媒を流す冷媒流路を内部に有する個体の研磨パッドへの接触、(3)研磨パッドに向けたミストの吹き付け、及び(4)研磨パッドに向けた冷却気体の吹き付け、のいずれか一つ以上で行うことを特徴とする請求項1乃至5のいずれかに記載の研磨方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011101051A JP5695963B2 (ja) | 2011-04-28 | 2011-04-28 | 研磨方法 |
TW101114481A TWI527106B (zh) | 2011-04-28 | 2012-04-24 | 研磨方法 |
US13/454,146 US9067296B2 (en) | 2011-04-28 | 2012-04-24 | Polishing method |
KR1020120043756A KR101541212B1 (ko) | 2011-04-28 | 2012-04-26 | 연마 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2011101051A JP5695963B2 (ja) | 2011-04-28 | 2011-04-28 | 研磨方法 |
Publications (2)
Publication Number | Publication Date |
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JP2012232366A JP2012232366A (ja) | 2012-11-29 |
JP5695963B2 true JP5695963B2 (ja) | 2015-04-08 |
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JP2011101051A Active JP5695963B2 (ja) | 2011-04-28 | 2011-04-28 | 研磨方法 |
Country Status (4)
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US (1) | US9067296B2 (ja) |
JP (1) | JP5695963B2 (ja) |
KR (1) | KR101541212B1 (ja) |
TW (1) | TWI527106B (ja) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6161999B2 (ja) | 2013-08-27 | 2017-07-12 | 株式会社荏原製作所 | 研磨方法および研磨装置 |
US9997420B2 (en) * | 2013-12-27 | 2018-06-12 | Taiwan Semiconductor Manufacturing Company Limited | Method and/or system for chemical mechanical planarization (CMP) |
JP6311186B2 (ja) * | 2014-04-04 | 2018-04-18 | 富士紡ホールディングス株式会社 | 研磨パッド及びその製造方法 |
JP6450650B2 (ja) * | 2015-06-16 | 2019-01-09 | 東京エレクトロン株式会社 | 処理装置、処理方法および記憶媒体 |
US9970754B2 (en) | 2015-08-26 | 2018-05-15 | Industrial Technology Research Institute | Surface measurement device and method thereof |
US9835449B2 (en) * | 2015-08-26 | 2017-12-05 | Industrial Technology Research Institute | Surface measuring device and method thereof |
JP6406238B2 (ja) * | 2015-12-18 | 2018-10-17 | 株式会社Sumco | ウェーハ研磨方法および研磨装置 |
WO2017139079A1 (en) * | 2016-02-12 | 2017-08-17 | Applied Materials, Inc. | In-situ temperature control during chemical mechanical polishing with a condensed gas |
US11318577B2 (en) | 2016-06-16 | 2022-05-03 | Texas Instruments Incorporated | System and method of delivering slurry for chemical mechanical polishing |
KR102591906B1 (ko) * | 2017-10-31 | 2023-10-20 | 가부시키가이샤 에바라 세이사꾸쇼 | 연마 장치 및 연마 방법 |
US20200001426A1 (en) | 2018-06-27 | 2020-01-02 | Hari Soundararajan | Temperature Control of Chemical Mechanical Polishing |
JP7162465B2 (ja) * | 2018-08-06 | 2022-10-28 | 株式会社荏原製作所 | 研磨装置、及び、研磨方法 |
JP7308074B2 (ja) * | 2019-05-14 | 2023-07-13 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
US11897079B2 (en) | 2019-08-13 | 2024-02-13 | Applied Materials, Inc. | Low-temperature metal CMP for minimizing dishing and corrosion, and improving pad asperity |
US20210046603A1 (en) * | 2019-08-13 | 2021-02-18 | Applied Materials, Inc. | Slurry temperature control by mixing at dispensing |
CN115103738A (zh) * | 2020-06-29 | 2022-09-23 | 应用材料公司 | Cmp中的温度和浆体流动速率控制 |
CN115461193A (zh) | 2020-06-30 | 2022-12-09 | 应用材料公司 | 用于cmp温度控制的设备和方法 |
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2011
- 2011-04-28 JP JP2011101051A patent/JP5695963B2/ja active Active
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2012
- 2012-04-24 TW TW101114481A patent/TWI527106B/zh active
- 2012-04-24 US US13/454,146 patent/US9067296B2/en active Active
- 2012-04-26 KR KR1020120043756A patent/KR101541212B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
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JP2012232366A (ja) | 2012-11-29 |
KR20120122929A (ko) | 2012-11-07 |
TW201308412A (zh) | 2013-02-16 |
KR101541212B1 (ko) | 2015-07-31 |
US20120276816A1 (en) | 2012-11-01 |
TWI527106B (zh) | 2016-03-21 |
US9067296B2 (en) | 2015-06-30 |
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