JP2023088921A - 化学機械研磨の温度制御 - Google Patents
化学機械研磨の温度制御 Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
- B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
- B24B37/107—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement in a rotary movement only, about an axis being stationary during lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/015—Temperature control
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/14—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the temperature during grinding
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Abstract
Description
Claims (15)
- 研磨パッドを保持するための支持体と、
研磨プロセス中に基板を前記研磨パッドに対して保持するためのキャリアヘッドと、
前記基板の上の材料の量に依存する信号を生成するように構成されたインシトゥモニタシステムと、
前記研磨プロセスの温度を制御するための温度制御システムと、
前記インシトゥモニタシステムおよび前記温度制御システムに接続されたコントローラであって、前記温度制御システムに、前記信号に応じて前記研磨プロセスの前記温度を変更させるように構成されたコントローラと
を備える化学機械研磨システム。 - 前記温度制御システムが、熱を前記研磨パッドの上に方向付けるための赤外線ヒータ、前記支持体またはキャリアヘッド内の抵抗加熱器、前記支持体またはキャリアヘッド内の熱電ヒータまたはクーラ、研磨液が前記研磨パッドに供給される前に、前記研磨液と熱を交換するように構成された熱交換器、または前記支持体の中に流体通路を有する熱交換器のうちの1つまたは複数を含む、請求項1に記載のシステム。
- 前記コントローラが、前記信号の関数として、研磨プロセスの所望の温度を示すデータを記憶するように構成され、前記コントローラが、前記研磨プロセスの前記温度を前記所望の温度に向かって操作するように構成される、請求項1に記載のシステム。
- 前記インシトゥモニタシステムが、前記研磨プロセス中に前記基板の下層の露出を検出するように構成される、請求項3に記載のシステム。
- 前記関数が、前記基板の前記下層の露出の変化の際に不連続であるステップ関数を含む、請求項4に記載のシステム。
- 前記インシトゥモニタシステムが、層の厚さまたは前記研磨プロセス中に除去された量を表す値を有する信号を生成するように構成される、請求項3に記載のシステム。
- 前記信号の前記値が、前記層の前記厚さまたは前記除去された量に比例する、請求項6に記載のシステム。
- 前記関数が、前記基板の前記層の前記厚さまたは前記除去された量の変化にわたって連続的である連続関数を含む、請求項6に記載のシステム。
- 前記コントローラが、前記温度制御システムに、閾値を超える前記信号の前記値に応じて、前記研磨プロセスの前記温度を変化させるように構成される、請求項6に記載のシステム。
- 前記閾値を超える前記信号の前記値は、前記層の残りの厚さが閾値の厚さを下回ったことを示し、前記コントローラが、前記閾値の厚さを下回る前記層の前記残りの厚さに応じて、前記温度を低下させるように構成される、請求項9に記載のシステム。
- 前記研磨プロセスの前記温度をモニタするためのセンサをさらに含み、前記コントローラが前記センサから信号を受信し、前記コントローラが、前記温度制御システムの閉ループ制御を含み、前記センサから測定された温度を前記所望の温度まで操作する、請求項3に記載のシステム。
- 研磨パッドに対して基板を保持することと、
前記基板の研磨プロセス中にインシトゥモニタシステムで前記基板の上の材料の量をモニタし、前記材料の量に依存する信号を生成することと、
温度制御システムに、前記信号に応じて前記研磨プロセスの温度を変更させることと
を含む、化学機械研磨の方法。 - 前記信号の関数として前記研磨プロセスの所望の温度を示すデータを記憶することを含む、請求項12に記載の方法。
- 前記インシトゥモニタシステムが、前記研磨プロセス中に前記基板の下層の露出を示す信号を生成するように構成され、前記関数が、前記基板の前記下層の露出の変化の際に不連続であるステップを含む、請求項13に記載の方法。
- 前記インシトゥモニタシステムが、研磨されている層の厚さ、または前記研磨プロセス中に除去された量を表す値を生成するように構成され、前記関数が、前記層の前記厚さまたは前記除去された量の変化にわたって連続的である連続関数を含む、請求項13に記載のシステム。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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US201762586086P | 2017-11-14 | 2017-11-14 | |
US62/586,086 | 2017-11-14 | ||
PCT/US2018/060809 WO2019099399A1 (en) | 2017-11-14 | 2018-11-13 | Temperature control of chemical mechanical polishing |
JP2020526124A JP7014908B2 (ja) | 2017-11-14 | 2018-11-13 | 化学機械研磨の温度制御 |
JP2022007142A JP7241937B2 (ja) | 2017-11-14 | 2022-01-20 | 化学機械研磨の温度制御 |
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JP2022007142A Division JP7241937B2 (ja) | 2017-11-14 | 2022-01-20 | 化学機械研磨の温度制御 |
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JP2023088921A true JP2023088921A (ja) | 2023-06-27 |
JP7433492B2 JP7433492B2 (ja) | 2024-02-19 |
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JP2022007142A Active JP7241937B2 (ja) | 2017-11-14 | 2022-01-20 | 化学機械研磨の温度制御 |
JP2023034275A Active JP7433492B2 (ja) | 2017-11-14 | 2023-03-07 | 化学機械研磨の温度制御 |
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JP2022007142A Active JP7241937B2 (ja) | 2017-11-14 | 2022-01-20 | 化学機械研磨の温度制御 |
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US (1) | US20190143476A1 (ja) |
JP (3) | JP7014908B2 (ja) |
KR (1) | KR102374591B1 (ja) |
CN (2) | CN111149196B (ja) |
TW (1) | TWI825043B (ja) |
WO (1) | WO2019099399A1 (ja) |
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KR20190035241A (ko) * | 2017-09-26 | 2019-04-03 | 삼성전자주식회사 | 화학 기계적 연마 공정의 온도 제어 방법, 이를 수행하기 위한 온도 제어 유닛, 및 이러한 온도 제어 유닛을 포함하는 화학 기계적 연마 장치 |
JP7287987B2 (ja) | 2018-06-27 | 2023-06-06 | アプライド マテリアルズ インコーポレイテッド | 化学機械研磨の温度制御 |
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TWI771668B (zh) | 2019-04-18 | 2022-07-21 | 美商應用材料股份有限公司 | Cmp期間基於溫度的原位邊緣不對稱校正 |
TWI754915B (zh) | 2019-04-18 | 2022-02-11 | 美商應用材料股份有限公司 | 用於溫度控制的化學機械拋光溫度掃描設備 |
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TW202110575A (zh) | 2019-05-29 | 2021-03-16 | 美商應用材料股份有限公司 | 用於化學機械研磨系統的蒸氣處置站 |
US11633833B2 (en) * | 2019-05-29 | 2023-04-25 | Applied Materials, Inc. | Use of steam for pre-heating of CMP components |
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JP7397617B2 (ja) * | 2019-10-16 | 2023-12-13 | 株式会社荏原製作所 | 研磨装置 |
US11772228B2 (en) * | 2020-01-17 | 2023-10-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Chemical mechanical polishing apparatus including a multi-zone platen |
WO2022006008A1 (en) | 2020-06-29 | 2022-01-06 | Applied Materials, Inc. | Control of steam generation for chemical mechanical polishing |
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US20220281061A1 (en) * | 2021-03-03 | 2022-09-08 | Applied Materials, Inc. | Temperature control with intra-layer transition during cmp |
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