KR101522070B1 - 연마 패드용 온도 조정 기구를 구비한 연마 장치 - Google Patents

연마 패드용 온도 조정 기구를 구비한 연마 장치 Download PDF

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KR101522070B1
KR101522070B1 KR1020120018406A KR20120018406A KR101522070B1 KR 101522070 B1 KR101522070 B1 KR 101522070B1 KR 1020120018406 A KR1020120018406 A KR 1020120018406A KR 20120018406 A KR20120018406 A KR 20120018406A KR 101522070 B1 KR101522070 B1 KR 101522070B1
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polishing
liquid
pad
flow path
polishing pad
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KR20120098455A (ko
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도오루 마루야마
다까즈 소네따
야스유끼 모또시마
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가부시키가이샤 에바라 세이사꾸쇼
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/015—Temperature control

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR1020120018406A 2011-02-25 2012-02-23 연마 패드용 온도 조정 기구를 구비한 연마 장치 Active KR101522070B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011039586A JP5628067B2 (ja) 2011-02-25 2011-02-25 研磨パッドの温度調整機構を備えた研磨装置
JPJP-P-2011-039586 2011-02-25

Related Child Applications (1)

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KR1020150054196A Division KR101704187B1 (ko) 2011-02-25 2015-04-17 연마 패드용 온도 조정 기구를 구비한 연마 장치와, 패드 접촉 부재의 세정 방법

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KR20120098455A KR20120098455A (ko) 2012-09-05
KR101522070B1 true KR101522070B1 (ko) 2015-05-20

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KR1020120018406A Active KR101522070B1 (ko) 2011-02-25 2012-02-23 연마 패드용 온도 조정 기구를 구비한 연마 장치
KR1020150054196A Active KR101704187B1 (ko) 2011-02-25 2015-04-17 연마 패드용 온도 조정 기구를 구비한 연마 장치와, 패드 접촉 부재의 세정 방법

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KR1020150054196A Active KR101704187B1 (ko) 2011-02-25 2015-04-17 연마 패드용 온도 조정 기구를 구비한 연마 장치와, 패드 접촉 부재의 세정 방법

Country Status (4)

Country Link
US (1) US9475167B2 (cg-RX-API-DMAC7.html)
JP (1) JP5628067B2 (cg-RX-API-DMAC7.html)
KR (2) KR101522070B1 (cg-RX-API-DMAC7.html)
TW (1) TWI476070B (cg-RX-API-DMAC7.html)

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JP5695963B2 (ja) * 2011-04-28 2015-04-08 株式会社荏原製作所 研磨方法
JP5927129B2 (ja) * 2013-01-31 2016-05-25 株式会社荏原製作所 研磨装置
JP6030980B2 (ja) * 2013-03-26 2016-11-24 株式会社荏原製作所 研磨装置温度制御システム、及び研磨装置
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JP6139420B2 (ja) * 2014-01-10 2017-05-31 株式会社東芝 研磨装置および研磨方法
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JP6263092B2 (ja) * 2014-06-23 2018-01-17 株式会社荏原製作所 研磨パッドの温度調節システムおよびこれを備えた基板処理装置
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JP6580939B2 (ja) 2015-10-20 2019-09-25 株式会社荏原製作所 研磨装置
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JP2018122406A (ja) * 2017-02-02 2018-08-09 株式会社荏原製作所 研磨パッドの表面温度を調整するための熱交換器、研磨装置、研磨方法、およびコンピュータプログラムを記録した記録媒体
JP6923342B2 (ja) * 2017-04-11 2021-08-18 株式会社荏原製作所 研磨装置、及び、研磨方法
JP7059117B2 (ja) * 2017-10-31 2022-04-25 株式会社荏原製作所 研磨パッドの研磨面の温度を調整するための熱交換器、該熱交換器を備えた研磨装置、該熱交換器を用いた基板の研磨方法、および研磨パッドの研磨面の温度を調整するためのプログラムを記録したコンピュータ読み取り可能な記録媒体
JP6975078B2 (ja) * 2018-03-15 2021-12-01 キオクシア株式会社 半導体製造装置および半導体装置の製造方法
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JP7066599B2 (ja) 2018-11-28 2022-05-13 株式会社荏原製作所 温度調整装置及び研磨装置
TWI885783B (zh) 2019-02-20 2025-06-01 美商應用材料股份有限公司 化學機械拋光裝置及化學機械拋光方法
JP7240931B2 (ja) * 2019-03-29 2023-03-16 株式会社荏原製作所 熱交換器の洗浄装置、および研磨装置
US11628478B2 (en) 2019-05-29 2023-04-18 Applied Materials, Inc. Steam cleaning of CMP components
TWI859239B (zh) 2019-05-29 2024-10-21 美商應用材料股份有限公司 用於化學機械研磨系統的蒸氣處置站的設備及方法
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US11897079B2 (en) 2019-08-13 2024-02-13 Applied Materials, Inc. Low-temperature metal CMP for minimizing dishing and corrosion, and improving pad asperity
TWI872101B (zh) 2019-08-13 2025-02-11 美商應用材料股份有限公司 Cmp溫度控制的裝置及方法
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CN115066316B (zh) 2020-06-29 2024-09-27 应用材料公司 控制化学机械抛光的蒸汽产生
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US11577358B2 (en) 2020-06-30 2023-02-14 Applied Materials, Inc. Gas entrainment during jetting of fluid for temperature control in chemical mechanical polishing
CN112629124A (zh) * 2020-12-14 2021-04-09 新昌浙江工业大学科学技术研究院 力流变抛光液温度调控系统及方法
CN112643523A (zh) * 2020-12-17 2021-04-13 新昌浙江工业大学科学技术研究院 带有通孔的球形零件用的力流变抛光设备
JP7695809B2 (ja) 2021-03-25 2025-06-19 株式会社荏原製作所 パッド温度調整装置、および研磨装置
KR20220148106A (ko) 2021-04-28 2022-11-04 에바라코포레이숀 연마 장치, 및 연마 방법
CN117067124B (zh) * 2023-10-13 2023-12-26 歌玛磨具南通有限公司 一种自冷却磨削砂轮

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Also Published As

Publication number Publication date
US20120220196A1 (en) 2012-08-30
TWI476070B (zh) 2015-03-11
JP5628067B2 (ja) 2014-11-19
US9475167B2 (en) 2016-10-25
TW201249593A (en) 2012-12-16
KR101704187B1 (ko) 2017-02-07
JP2012176449A (ja) 2012-09-13
KR20120098455A (ko) 2012-09-05
KR20150048687A (ko) 2015-05-07

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