TWI460136B - 用於減少半導體製程用水之有機碳的紫外光活化氧化法 - Google Patents
用於減少半導體製程用水之有機碳的紫外光活化氧化法 Download PDFInfo
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Classifications
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- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F9/00—Multistage treatment of water, waste water or sewage
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- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/20—Treatment of water, waste water, or sewage by degassing, i.e. liberation of dissolved gases
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- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/30—Treatment of water, waste water, or sewage by irradiation
- C02F1/32—Treatment of water, waste water, or sewage by irradiation with ultraviolet light
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- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
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- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
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- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/44—Treatment of water, waste water, or sewage by dialysis, osmosis or reverse osmosis
- C02F1/444—Treatment of water, waste water, or sewage by dialysis, osmosis or reverse osmosis by ultrafiltration or microfiltration
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- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
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- C02F1/469—Treatment of water, waste water, or sewage by electrochemical methods by electrochemical separation, e.g. by electro-osmosis, electrodialysis, electrophoresis
- C02F1/4693—Treatment of water, waste water, or sewage by electrochemical methods by electrochemical separation, e.g. by electro-osmosis, electrodialysis, electrophoresis electrodialysis
- C02F1/4695—Treatment of water, waste water, or sewage by electrochemical methods by electrochemical separation, e.g. by electro-osmosis, electrodialysis, electrophoresis electrodialysis electrodeionisation
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- C—CHEMISTRY; METALLURGY
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- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
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- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
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- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
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- C—CHEMISTRY; METALLURGY
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- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F2209/00—Controlling or monitoring parameters in water treatment
- C02F2209/20—Total organic carbon [TOC]
Description
本發明概括地關於一種用於半導體製造用水的純化方法。更明確地，本發明關於一種使用紫外光活化之過硫酸鹽以分解在半導體製造設備的純水與製程廢水流中有機化合物的方法。
使用紫外光活化的含水過硫酸鹽以降低水中TOC係已知的。其係分解水中有機化合物的確定方法且例如係討論於頒佈給Ejzak的美國專利第4,277,438號中，其教示一種藉(1)加入過硫酸鹽、(2)以超高劑量紫外光照射(其亦加熱樣本)活化過硫酸鹽以將任何TOC氧化成二氧化碳與水以製備用於TOC測量的水樣本的批次方法。Godec等人的美國專利第5,443,991號教示一種類似的方法。
頒佈給Obata等人的美國專利第5,571,419號係揭示一種具有低濃度有機物質的超純水(UPW)的製造方法。該純化方法需要對欲處理的水進行下列處理：(1)將pH值調整至低於4.5；(2)加入氧化劑(如過硫酸鹽)；(3)較佳係將水加熱至最低110℃，且更佳係120∘至170℃；且(4)將水冷卻至使用所需的溫度。
習知技藝亦包括顯示高級氧化程序以破壞廢水內的有機化合物的參考，其係包括頒佈給Peyton的美國專利第5,762,808號與頒佈給Cooper等人的美國專利第6,096,283
號。
不過，儘管在此技術中已有進步，但對需要具有受控制總有機碳的超純水的半導體工業與其他工業而言，其仍然需要一種可製造低TOC UPW的可靠、連續來源的改良方法。本發明的新穎性係過硫酸鹽的紫外光活化，在周圍溫度下產生高氧化勢基，在分配點(POD)排放前，於連接點(POC)(典型標示為使用點或POU)前在未經調整pH值的水中純化UPW，以及在連續的基準上純化使用過的UPW以重複使用。
前述專利係反映本發明者所熟知的最新技術。對這些專利的參考與討論係有助於履行申請者在揭示可能與本發明之申請專利範圍審查相關資訊上之公正告知責任。不過，此處謹鄭重地提出前述指出的專利，單獨或組合考慮，均未揭示、教示、建議、顯示或使本文所描述與請求的發明成為顯而易見。
本發明是一種用於分解水中的含碳化合物的方法。此方法係經由在紫外光源上游處的過硫酸鹽的添加以降低水中的總有機碳(TOC)。紫外光係被過硫酸鹽所吸收以將過硫酸鹽轉化成硫酸根基。硫酸根基將TOC氧化以將提供的化合物轉化成CO2
與礦物鹽類。
本發明的新穎性是使用紫外光/過硫酸鹽氧化方法以用於使用在半導體製造用水的純化與一般UPW的製造上。
本方法係使用塞流(PFR)或攪拌槽(CSTR)或兩者之組
合的標準光化學反應器。最有成本效益的設計預期是具有浸入式紫外光燈的CSTR。可以使用多個反應器串聯以改善試劑使用。
本發明的主要目的是提供可降低半導體製程用水內TOC的新穎方法。
關於組態與操作方法，本發明特性的其他新穎特徵，連同其進一步目的與優點，將可從下述與所附圖式一併考量的描述來清楚地瞭解，其中本發明的較佳具體實例以舉例的方式來說明。不過應清楚瞭解的是圖式僅用於舉例與描述之用且並不欲作為本發明限制之定義。作為本發明特性的各種新穎特徵係仔細地在後附申請專利範圍內指出且形成此揭示之一部份。本發明並不在於任何一個這些特徵中的單獨一個一，而是在於所有用於其指定功能的結構的特別組合。
當考量其下述詳細描述後，將可更加瞭解本發明且非上述所列出者的其他目的將變得顯而易見。此描述係參考後附之圖式：
參考圖1至4，其中在各個圖式中類似的參考編號係指同類的組件，圖1A為顯示構成用於降低半導體製程用水內有機碳的本發明之紫外光活化氧化程序之元件的概略圖，此處通常命名為AOP 100。TOC分解性能係藉反應容器大小、所使用紫外光的強度與數量、以及所注入的過硫
酸鹽數量以控制。系統組態係包括未經處理之水源110，其係經由一或多個流體入口130以投入化學反應器容器120內。來自過硫酸鹽陰離子添加系統140的過硫酸鹽亦投入反應器容器內，該系統包括過硫酸鹽進料槽150、流體入口160與進料泵浦170。一或多個紫外光180、190，如同化學溶液混合器200，係配置在容器腔(vessel enclosure)內。
反應器容器較佳是連續攪拌槽反應器(CSTR)。此可維持低成本且提高系統簡單性。不過，在空間(系統台面面積)高價的情況下塞流式反應器(PFR)可能是較佳的。另一選擇是可以使用與具有紫外光220的PFR 210串聯的CSTR以提高系統效能。
經處理過的水可以是經由一或多個排放出口230直接排放(在單一反應器系統的情況)以進一步使用，或進入PFR以進一步處理且隨後從終端排放出口240排放。經處理過的水250係在排放處藉TOC分析器260以取樣，其將根據系統需要以調整且控制過硫酸鹽進料泵浦170。
圖1B係顯示當在POD 360之前以及POC 380之前採用於UPW的製造中以生產用於重要POU使用390之超低TOC(即<POD水平)的典型半導體UPW製造系統470內AOP 100之實施。圖1B亦顯示當採用在半導體製造中使用過的UPW 440的純化內AOP 100之實施。
已處理的重複使用UPW 460可與進料生水270混合以製造進入UPW製造系統470所需的混合進料流280。或者，
已處理的重複使用UPW 460可以在UPW製造系統470內的任何位置處與UPW混合。前處理系統係藉由將用於減少懸浮固體、減少起始有機化合物、移除氯與調整pH值所需的各種不同技術合併來處理混合的進料流，以製造具有適當特性的進料水300，其對補充系統310內的UPW製造將是有效率的。補充系統方法典型地係包括熱交換(HX)、超過濾(UF)、薄膜過濾(MF)、第一次通過逆滲透(RO)、第二次通過RO、電去離子(EDI)，離子交換(IX)、薄膜除氣(MD－A)或真空除氣(VD－A)與紫外光殺菌(UV)以製造所需的補充水質320，其係具有等於或高於在POU處的總平均用量者(370加上390)的流量。儲存於DI儲槽330內的補充水當補充系統故障或當平均POU UPW用量超過補充系統容量時，可提供有限的支援。來自DI儲槽的UPW係以較在合併POU處UPW尖峰用量者為高的流量泵送340通過精製系統(Polish System)350。在精製系統內的UPW係使用HX、EDI、IX、UV、MF與UF來純化以製造在非重要POU 370處所需的POD 360品質規格的UPW。某些特定重要無塵室製程390，如黃光微影製程，將需要具有較在POD 360處所製造者之雜質含量為低的UPW。為符合此需求，POU系統410將安裝在進入重要無塵室製程的POC處。POU系統可以包括符合在POC處的無塵室特定UPW規格所需的HX、RO、EDI、IX、MD－A、壓力控制、UV、MF與UF。非重要與重要無塵室UPW用量總合將等於合併的無塵室UPW用量。在合併POU處未使用的UPW
將送回400至DI儲槽。某些無塵室UPW使用會產生UPW廢水，其就經濟上來說並不適合重複使用420(因高含量的懸浮固體、化學藥品等)，故係送至廢物處理。大多數使用過的UPW 430主要是被能夠在重複使用系統440中純化的TOC所污染且係運送至460與進料生水270混合。未符合用於混合450所需規格的水將送至廢物處理。
AOP 100可以採用在由預處理系統、補充系統、DI儲槽與精製系統所組成的UPW製造系統470中任何位置。
在UPW製造系統470內採用AOP 100的較佳位置是在第一次通過RO的產物物流上。在此位置處，進入AOP 100的進料水將具有顯著降低的懸浮固體、離子化固體、微生物與TOC水平，其全部可提昇AOP 100的性能。在AOP 100產物內的TOC應加以控制以使在POD 360與非重要POU 370處的TOC係低於規格。將來自AOP 100的產物水引導至UPW製造系統470內的下述單元製程，其中來自AOP製程的氧化產物將被移除。
AOP 100可以在介於POD 360與前往重要的POU 390的POC 380間的任何位置處採用，以將TOC降低至POU 390所需的規格。可以採用與UPW製造系統470中所見者相似的額外單元製程，以移除在AOP 100內所製造的氧化產物，或是符合用於POU 390，但從POD 360所輸送來的UPW卻未達成的其他規格。
可以在重複使用系統440中採用AOP 100來降低分離、使用過的UPW 430內的TOC，以製造適合重複使用
在UPW系統或其他用途的重複使用UPW 460。可以採用使用MF或UF來降低重複使用給水430內的懸浮固體以改良AOP 100的效率。亦可採用使用RO、EDI、或IX以部份或全部降低重複使用UPW 460的離子化固體以符合重複使用UPW的使用規格。
熟習該項技藝之人士將可立即瞭解的是，對作為來自配置在流出物排放上的TOC/TDS分析器的回饋信號的替代或添加而言，可藉配置在欲處理水的入口端上的TOC分析器以提供對過硫酸鹽添加系統的前饋信號。此組態係頗為簡單易懂而無需進一步說明。
反應器性能是下述設計參數的函數：(1)滯留時間；(2)反應器半徑(光路徑長度)；(3)燈具線性能量密度；(4)能量波長；(5)過硫酸鹽濃度；與(6)TOC組成物與濃度。
反應器設計係在決定需要分解以進行所需的TOC分解的過硫酸鹽數量後才選定。過硫酸鹽分解率與添加速率係藉將對於成本費用、操作費用與可得台面面積之設計參數加以最佳化以建立。
過硫酸鹽分解成硫酸根基且隨後與有機化合物的反應是一組均相反應。流體在反應器內的滯留時間愈久，所吸收的活化紫外光數量則愈大。因此，滯留時間可影響將被分解的進料過硫酸鹽的比率，以及因而被氧化的有機物質數量。
加大反應器半徑可提高滯留時間且增加燈具與反應器壁間的距離。從燈具再逐漸加大的反應器體積會由於較低
的光子通量率而造成過硫酸鹽的分解較無效。不過，由於光線必須通過更多的水，將有更多的光子被吸收，造成輸入紫外光的較佳使用。所以加大反應器半徑的效應將是水有效吸收的函數。當水吸收很少的光線時，則加大反應器半徑對性能有較大的影響。滯留時間係隨半徑平方而改變，但由於視角因數隨與燈具的距離成反比，故光子通量率隨1/r而變化。因此，當紫外光能量係較桶槽大小相對更為昂貴時，應設定桶槽半徑以使較少的紫外光到達桶壁。
光能量輸入或燈具線性能量密度的效應亦是直接的。當更多的光線加入反應器時，會有更多的過硫酸鹽被分解。分解的過硫酸鹽數量通常係與能量輸入成線性比例。能量輸入可藉改變所用燈具數目與燈具選擇以變化。例如，同時用於光解與生物控制的標準低壓汞燈係具有約0.2W/cm的254nm輸出。能產生0.4與0.6W/cm的汞齊燈是可得的。此外中壓汞燈典型上可產生在200－260nm範圍的15W/cm。
所採用的光線波長亦是一項重要的設計變數。圖2係顯示含水過硫酸鹽的吸收光譜500。如圖2中所示，當波長降低時，過硫酸鹽將吸收較大比率的光線。在254nm下，非常少量的光線會被吸收。使用220nm的光線對給定的路徑長度造成更多的光線吸收。將紫外光調整至過硫酸鹽吸收更強的波長可在當光線的某些部份在到達反應器器壁前未被吸收的情況下改善其性能。額外吸收的光線可直接轉
變成更多的過硫酸鹽分解與改良其性能。波長的下限係藉水的光子吸收以設定，其將強烈地發生在低於190nm下。
對於給定的反應器設計，TOC分解性能係取決於過硫酸鹽的進料速率。對給定性能所需的過硫酸鹽數量係取決於：(a)促成TOC的特定化學藥品；(b)這些化學藥品的濃度；以及(c)所需的TOC分解性能。
當在水中有其他可吸收紫外光(降低過硫酸鹽降解的有效量子效率)或可被硫酸根基所氧化(因此與TOC競爭硫酸根基)的化學藥品時，所需要的過硫酸鹽數量亦會受影響。通常，較乾淨的水可允許較有效率的TOC控制。
本方法可藉下述實例說明，其係僅為說明之目的而提供，且並非用於限制此處所描述的本發明之範疇。
實例1：測試指出對給定的目標化學品，絕對反應速率是目標化學品濃度的較低階。對給定的過硫酸鹽進料速率與紫外光能量可產生許多基團，其在狹小的目標化學品濃度範圍內，與目標化合物的濃度無關地，分解固定數量的目標化合物。
圖3係圖示在固定滯留時間與過硫酸鹽進料速率600下，尿素濃度對性能的效應。該數據係藉使用配備254nm燈具的塞流式反應器以產生。數據顯示尿素在10 ppb下分解的絕對量僅為在2 ppb下分解者的二倍。對於其他的AOP，將需要某些氧化劑對目標莫耳比值以達成所需之性能。此效應對比於許多化學方法，其反應速率係與目標化學品濃度成正比例。
這些數據是使用本方法以從超純水物流中移除相對難以氧化的化合物之實例。
實例2：進行一系列檢驗以模擬使用過的清洗水測試攪拌槽(CSTR)設計概念。將異丙醇(IPA)作為目標化合物，因其已顯示其不易分解且為清洗廢水的主要成分。本研究的目的是決定1－5 ppm之TOC是否可降低成<5 ppb。
實驗研究的結果700係整理於圖4中。其結果可以三種測試的IPA濃度分組。注意在IPA濃度與TOC濃度間會有所不同；IPA僅有60%的碳，故1.5 ppm的IPA相當於915 ppb的TOC。
低IPA測試－在最低的IPA測試濃度(1.5 ppm)下，達成目標排放物TOC所需的過硫酸鹽添加是合理的。在使用單一20分鐘滯留時間的CSTR下，提高添加劑加入對性能的影響即使對高達100%的IPA分解仍呈線性。藉著在CSTR後以串聯的方式加入1分鐘滯留時間的塞流反應器(PFR)，其性能可藉分解殘留的過硫酸鹽以改善。換句話說，某些添加劑並未在CSTR內分解且係通過並在PFR中分解。在使用二個串聯的反應器下，75 ppm的添加劑添加已足夠以破壞本質上所有的IPA。
中等IPA測試－在中等IPA測試濃度(2.4 ppm)下，過硫酸鹽加入與IPA分解間的關係亦是線性的。在使用20分鐘滯留時間的CSTR下，使用200 ppm的過硫酸鹽即可達成將近100%的分解。當CSTR的滯留時間減少至15分鐘時，添加劑的需求將略微提高。
高IPA測試－在最高IPA測試濃度(4.9 ppm)下，達成99＋%分解需求所需的過硫酸鹽數量將是顯著的。添加劑添加與分解性能間的關係已不再是線性。較高過硫酸鹽濃度對性能的影響當接近100%分解時將降低。雖然此IPA濃度係較意圖應用所預期者為高，但其達成水中較高IPA濃度接近完全分解的能力可對製程提供所欲之彈性。
整體而言，這些測試顯示在使用充足滯留時間的簡單CSTR光化學反應器與適度紫外光能量輸入下，該技術對使用過的清洗水處理是可實行的。
此處所揭示為顯示本發明之系統在其最基本的外觀上是關於處理半導體製程用水以降低水中的總有機化合物。該系統包括一化學反應器容器與位於化學反應器容器上游的過硫酸鹽陰離子添加系統，且採用光能以氧化含水過硫酸鹽。其較佳用途是處理用於半導體製造的純水，且其較佳係採用該系統以將TOC分解至低於5 ppb，且再更佳係低於1 ppb。不過，其亦可採用於處理半導體製造的廢水，且在此實施中，其係用於將TOC分解至足夠低的濃度以允許水重複使用。在每一個實施中，過硫酸鹽進料速率係藉基於來自流出的TOC分析回饋信號的TOC分析器以控制。或者，其亦可藉來自未處理進料水的TOC分析的前饋信號以控制。在仍是其他替代選擇中，其可藉兩者以控制。
再者，在其最基本的外觀上，本發明是一種處理半導體製程用水以降低總有機化合物的方法，且此方法包含之步驟為(1)提供具有高於超純用途所需者之TOC濃度的半
導體製造用水來源；(2)在化學反應器容器內將含水過硫酸鹽陰離子與半導體製造用水混合；(3)在預定之滯留時間內，將過硫酸鹽陰離子與水混合物暴露於紫外光下；且(4)將處理過之水排出以進行超高純度用途所需的進一步處理。當半導體製造用水是純水時，本方法將特別適合使用，且該方法可採用以將TOC分解至低於5 ppb，且更佳係低於1 ppb。此外，該方法係特別適合用於處理半導體製造廢水，且該方法係用於將TOC分解至足夠低的濃度以允許水重複使用，且可以進行進一步的處理以移除溶解的固體與溶解的氣體。
在進行本方法時，將過硫酸鹽的引入反應容器內可藉來自流出的TOC分析的回饋信號或來自未處理進料水內TOC分析的前饋信號，或兩者以控制。在前者的情況中，TOC分析器應配置在欲處理水源與化學反應器容器之間，且在後者的情況中，TOC分析器應配置在化學反應器容器的任何下游位置處，其包括排放出口本身或在使用或重複使用點前之任何位置。
前述揭示已足夠使熟習該項技藝之人士在毋需過度實驗下實施本發明。該揭示進一步提供現由發明者所考慮的實施本發明的最佳模式。
雖然此處所顯示且詳細揭示的特定裝置與方法已能夠完全地達成於此所陳述的目的且提供效益，但應瞭解的是其僅係本發明目前較佳具體實例的說明，且並非意圖要限制關於非在後附申請專利範圍內定義者所顯示的架構或設
計細節。因此，本發明的適當範疇應僅藉後附申請專利範圍的最廣泛詮釋以決定，以包含明顯的修改以及所有同等於在圖式中所說明且在陳述中所描述的關係。
100‧‧‧AOP
110‧‧‧未經處理之水源
120‧‧‧化學反應器容器
130‧‧‧流體入口
140‧‧‧過硫酸鹽陰離子添加系統
150‧‧‧過硫酸鹽進料槽
160‧‧‧流體入口
170‧‧‧進料泵浦
180‧‧‧紫外光
190‧‧‧紫外光
200‧‧‧化學溶液混合器
210‧‧‧PFR
220‧‧‧紫外光
230‧‧‧排放出口
240‧‧‧終端排放出口
250‧‧‧經處理過的水
260‧‧‧TOC分析器
270‧‧‧進料生水
280‧‧‧混合進料流
300‧‧‧進料水
310‧‧‧補充系統
320‧‧‧補充水質
330‧‧‧DI儲槽
340‧‧‧自DI儲槽的UPW
350‧‧‧精製系統
430‧‧‧使用過的UPW
440‧‧‧重複使用系統
460‧‧‧重複使用的UPW
470‧‧‧UPW製造系統
當考量其下述詳細描述後，將可更加瞭解本發明且非上述所列出者的其他目的將變得顯而易見。此描述係參考後附之圖式，其中：圖1A係一顯示本發明之高級氧化系統的概略圖；圖1B是一傳統半導體工業UPW系統的區塊概略圖，其係顯示可採用於UPW製造系統內，使用端與用於重複使用的本發明之紫外光/過硫酸鹽高級氧化系統的可能位置；圖2係一顯示含水過硫酸鹽吸收光譜的圖式；圖3係一顯示尿素濃度對具有0.5 ppm過硫酸鹽與0.9分鐘滯留時間的塞流反應器分解性能影響之圖式；且圖4係一顯示用於處理用過的清洗水的本發明系統的模擬初步試驗測試結果的圖式。
100‧‧‧AOP
110‧‧‧未經處理之水源
120‧‧‧化學反應器容器
130‧‧‧流體入口
140‧‧‧過硫酸鹽陰離子添加系統
150‧‧‧過硫酸鹽進料槽
160‧‧‧流體入口
170‧‧‧進料泵浦
180‧‧‧紫外光
190‧‧‧紫外光
200‧‧‧化學溶液混合器
210‧‧‧PFR
220‧‧‧紫外光
230‧‧‧排放出口
240‧‧‧終端排放出口
250‧‧‧經處理過的水
260‧‧‧TOC分析器
Claims (10)
- 一種處理半導體製造用水以降低總有機碳(TOC)的方法，該方法包含：提供半導體製造用水來源；將含水過硫酸鹽溶液加到該半導體製造用水中，以產生一混合物；在預定的滯留時間內，在化學反應器容器內將該混合物曝露於紫外光下，以提供包含TOC濃度少於5ppb的經處理的水；測量該半導體製造用水與該經處理的水至少其中之一的TOC濃度；且基於該半導體製造用水與該經處理的水至少其中之一的TOC量測值，調整該含水過硫酸鹽加到該半導體製造用水的速率。
- 如申請專利範圍第1項之方法，其中該經處理的水具有TOC濃度小於1ppb。
- 如申請專利範圍第2項之方法，其中調整該加入含水過硫酸鹽的速率，係基於該半導體製造用水的TOC量測值。
- 如申請專利範圍第2項之方法，其進一步包括移除溶解的固體與溶解的氣體。
- 如申請專利範圍第2項之方法，其中調整該加入含水過硫酸鹽的速率，係基於該經處理的水的TOC量測值。
- 如申請專利範圍第1項之方法，其中在該化學反應 器容器內將該混合物曝露於紫外光下包括在塞流式反應器內將該混合物曝露於紫外光下。
- 如申請專利範圍第1項之方法，其中在該化學反應器容器內將該混合物曝露於紫外光下包括在連續攪拌槽反應器內將該混合物曝露於紫外光下。
- 如申請專利範圍第7項之方法，其中在該化學反應器容器內將該混合物曝露於紫外光下包括在位於塞流式反應器下游的該連續攪拌槽反應器內將該混合物曝露於紫外光下。
- 如申請專利範圍第1項之方法，其進一步包括在將過硫酸鹽溶液加到該半導體製造用水中之前，使該半導體製造用水通過一逆滲透單元。
- 如申請專利範圍第1項之方法，其中該方法係在周圍溫度下進行。
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Also Published As
| Publication number | Publication date |
|---|---|
| WO2007146671A3 (en) | 2008-02-14 |
| US8652336B2 (en) | 2014-02-18 |
| WO2007146671A2 (en) | 2007-12-21 |
| US20110180485A1 (en) | 2011-07-28 |
| TW200922884A (en) | 2009-06-01 |
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