TWI457989B - 結晶半導體膜的製造方法 - Google Patents

結晶半導體膜的製造方法 Download PDF

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Publication number
TWI457989B
TWI457989B TW099127594A TW99127594A TWI457989B TW I457989 B TWI457989 B TW I457989B TW 099127594 A TW099127594 A TW 099127594A TW 99127594 A TW99127594 A TW 99127594A TW I457989 B TWI457989 B TW I457989B
Authority
TW
Taiwan
Prior art keywords
irradiation
semiconductor film
pulse
pulsed laser
laser
Prior art date
Application number
TW099127594A
Other languages
English (en)
Chinese (zh)
Other versions
TW201133572A (en
Inventor
Junichi Shida
Masashi Machida
Miki Sawai
Original Assignee
Japan Steel Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Steel Works Ltd filed Critical Japan Steel Works Ltd
Publication of TW201133572A publication Critical patent/TW201133572A/zh
Application granted granted Critical
Publication of TWI457989B publication Critical patent/TWI457989B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
    • H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
TW099127594A 2009-11-20 2010-08-18 結晶半導體膜的製造方法 TWI457989B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009264812A JP4947667B2 (ja) 2009-11-20 2009-11-20 結晶半導体膜の製造方法

Publications (2)

Publication Number Publication Date
TW201133572A TW201133572A (en) 2011-10-01
TWI457989B true TWI457989B (zh) 2014-10-21

Family

ID=44059476

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099127594A TWI457989B (zh) 2009-11-20 2010-08-18 結晶半導體膜的製造方法

Country Status (5)

Country Link
JP (1) JP4947667B2 (ko)
KR (1) KR101259936B1 (ko)
CN (1) CN102630336B (ko)
TW (1) TWI457989B (ko)
WO (1) WO2011061991A1 (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI462261B (zh) * 2011-10-28 2014-11-21 Alpha & Omega Semiconductor Cayman Ltd 結合封裝高端及低端晶片之半導體元件及其製造方法
JP5918118B2 (ja) * 2012-12-18 2016-05-18 株式会社日本製鋼所 結晶半導体膜の製造方法
KR102480839B1 (ko) * 2016-07-05 2022-12-26 삼성디스플레이 주식회사 레이저 결정화 장치 및 이의 구동 방법
JP6687497B2 (ja) * 2016-10-20 2020-04-22 株式会社日本製鋼所 結晶半導体膜製造方法、結晶半導体膜製造装置および結晶半導体膜製造装置の制御方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000183358A (ja) * 1998-07-17 2000-06-30 Sony Corp 薄膜半導体装置の製造方法
JP2001053020A (ja) * 1999-08-06 2001-02-23 Sony Corp 半導体薄膜の結晶化方法及び薄膜半導体装置の製造方法
JP2002176180A (ja) * 2000-12-06 2002-06-21 Hitachi Ltd 薄膜半導体素子及びその製造方法
JP2008091811A (ja) * 2006-10-05 2008-04-17 Ihi Corp レーザアニール方法及びレーザアニール装置
JP2009004629A (ja) * 2007-06-22 2009-01-08 Semiconductor Energy Lab Co Ltd 多結晶半導体膜形成方法及び多結晶半導体膜形成装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1074697A (ja) * 1996-08-29 1998-03-17 Toshiba Corp 多結晶シリコン膜、多結晶シリコンの製造方法、薄膜トランジスタの製造方法、液晶表示装置の製造方法、及びレーザアニール装置
JP2007035812A (ja) * 2005-07-26 2007-02-08 Mitsubishi Electric Corp 多結晶シリコン膜の製造方法および薄膜トランジスタ

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000183358A (ja) * 1998-07-17 2000-06-30 Sony Corp 薄膜半導体装置の製造方法
JP2001053020A (ja) * 1999-08-06 2001-02-23 Sony Corp 半導体薄膜の結晶化方法及び薄膜半導体装置の製造方法
JP2002176180A (ja) * 2000-12-06 2002-06-21 Hitachi Ltd 薄膜半導体素子及びその製造方法
JP2008091811A (ja) * 2006-10-05 2008-04-17 Ihi Corp レーザアニール方法及びレーザアニール装置
JP2009004629A (ja) * 2007-06-22 2009-01-08 Semiconductor Energy Lab Co Ltd 多結晶半導体膜形成方法及び多結晶半導体膜形成装置

Also Published As

Publication number Publication date
JP2011108987A (ja) 2011-06-02
CN102630336B (zh) 2013-05-08
CN102630336A (zh) 2012-08-08
JP4947667B2 (ja) 2012-06-06
KR20120073371A (ko) 2012-07-04
TW201133572A (en) 2011-10-01
KR101259936B1 (ko) 2013-05-02
WO2011061991A1 (ja) 2011-05-26

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