TWI457989B - Fabricating method of crystalline semiconductor film - Google Patents
Fabricating method of crystalline semiconductor film Download PDFInfo
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
Description
本發明是關於一種於非單晶半導體膜上照射(重疊(over lap)照射)多次線束形狀的脈衝雷射並使其移動而進行結晶化的結晶半導體膜的製造方法。 The present invention relates to a method for producing a crystalline semiconductor film which is irradiated (overlapped) on a non-single-crystal semiconductor film by a plurality of beam-shaped pulsed lasers and moved to be crystallized.
通常於電視(Television，TV)或個人電腦(Personal Computer，PC)顯示器中所使用的薄膜電晶體是由非晶(amorphous)矽(以下稱為a-矽)構成，利用某些方法使矽結晶化(以下稱為p-矽)而加以利用，藉此可使作為薄膜電晶體(Thin Film Transistor，TFT)的性能明顯地提高。目前，作為低溫下的Si結晶化製程，準分子雷射退火技術已得到實用化，頻繁地利用於面向行動電話等的小型顯示器的用途中，而且正在進行於大畫面顯示器等中的實用化。 A thin film transistor generally used in a television (TV) or a personal computer (PC) display is composed of an amorphous yttrium (hereinafter referred to as a- 矽), which is crystallized by some methods. The use (hereinafter referred to as p-矽) is utilized, whereby the performance as a thin film transistor (TFT) can be remarkably improved. At present, as a Si crystallization process at a low temperature, an excimer laser annealing technique has been put into practical use, and it is frequently used in applications for small displays such as mobile phones, and is being put into practical use in large-screen displays and the like.
該雷射退火法為如下方法：藉由對非單晶半導體膜照射具有高脈衝能量的準分子雷射，而使吸收光能量的半導體成為熔融或半熔融狀態，其後於急速冷卻並凝固時結晶化。此時，為了處理寬廣之區域，而相對地於短軸方向上一面掃描一面照射整形為線束形狀的脈衝雷射。通常藉由使設置有單晶半導體膜的設置台移動來進行脈衝雷射的掃描。 The laser annealing method is a method in which a non-single-crystal semiconductor film is irradiated with a quasi-molecular laser having a high pulse energy, and a semiconductor that absorbs light energy is in a molten or semi-molten state, and then rapidly cooled and solidified. Crystallization. At this time, in order to process a wide area, a pulsed laser beam shaped into a beam shape is irradiated while scanning in the short-axis direction. The scanning of the pulsed laser is usually performed by moving a mounting table provided with a single crystal semiconductor film.
於上述脈衝雷射的掃描中，為了對非單晶半導體膜的同一位置照射(重疊照射)多次脈衝雷射，而使脈衝雷射以規定間距於掃描方向上移動(例如參照專利文獻1)。藉 此，可對大尺寸的半導體膜進行雷射退火處理。再者，於專利文獻1中，雷射的依次操作所伴隨的結晶性的不均勻性(不均)成為產生元件間不均的原因，因此使脈衝雷射的掃描方向上的通道區域的尺寸S、與脈衝雷射的掃描間距P大致為S=nP(n為除0以外的整數)，形成為結晶性Si膜的結晶分佈在脈衝雷射光的掃描方向上週期性地變化的圖案，使各薄膜電晶體的通道區域中的結晶性Si膜的結晶性分佈的圖案的週期性變化相等。 In the scanning of the pulsed laser, the pulse laser is moved in the scanning direction at a predetermined pitch in order to irradiate (overlap) the pulse laser at the same position of the non-single-crystal semiconductor film (for example, refer to Patent Document 1). . borrow Thus, a large-sized semiconductor film can be subjected to laser annealing treatment. Further, in Patent Document 1, the unevenness (non-uniformity) of crystallinity accompanying the sequential operation of the laser causes the unevenness between the elements, so that the size of the channel region in the scanning direction of the pulse laser is made. S, the scanning pitch P of the pulsed laser is substantially S=nP (n is an integer other than 0), and is formed into a pattern in which the crystal distribution of the crystalline Si film periodically changes in the scanning direction of the pulsed laser light, so that The periodic change of the pattern of the crystallinity distribution of the crystalline Si film in the channel region of each of the thin film transistors is equal.
並且，於先前的使用線束的雷射退火處理中，將脈衝雷射的掃描方向的光束寬度固定在0.35mm~0.4mm左右，並將每個脈衝對基板的發送量設定為光束寬度的3%~8%左右，為了確保多個薄膜電晶體的性能的均勻性，而認為必須儘可能地增加雷射的照射次數。 Further, in the conventional laser annealing process using the wire harness, the beam width in the scanning direction of the pulse laser is fixed at about 0.35 mm to 0.4 mm, and the transmission amount of each pulse to the substrate is set to 3% of the beam width. ~8% or so, in order to ensure the uniformity of the performance of a plurality of thin film transistors, it is considered that the number of times of laser irradiation must be increased as much as possible.
例如於液晶顯示器(Liquid Crystal Display，LCD)用半導體膜中，將重疊率設定為92%~95%(照射次數為12次~20次，掃描間距為32μm~20μm)，於有機發光二極體(Organic Light-Emitting Diode，OLED)半導體膜中，將重疊率設定為93.8%~97%(照射次數為16次~33次，掃描間距為25μm~12μm)。 For example, in a semiconductor film for a liquid crystal display (LCD), the overlap ratio is set to 92% to 95% (the number of irradiations is 12 to 20 times, and the scanning pitch is 32 μm to 20 μm) in the organic light-emitting diode. In the (Organic Light-Emitting Diode, OLED) semiconductor film, the overlap ratio was set to 93.8% to 97% (the number of irradiations was 16 to 33 times, and the scanning pitch was 25 μm to 12 μm).
[先前技術文獻] [Previous Technical Literature]
[專利文獻] [Patent Literature]
[專利文獻1]日本專利特開平10-163495號公報 [Patent Document 1] Japanese Patent Laid-Open No. Hei 10-163495
然而，本發明者等人進行研究的結果發現，掃描間距值越小，則雷射的照射次數越增加，但實際上如在規定條 件下照射次數為8次左右般，若照射次數到達某次數以上，則結晶粒徑不會增大而飽和。即，即便使照射次數增加至必需次數以上，亦無法有效地利用雷射輸出，並會導致結晶化處理時間的增加。 However, as a result of research conducted by the inventors of the present invention, it has been found that the smaller the scan pitch value is, the more the number of times of laser irradiation is increased, but actually, as in the prescribed strip When the number of times of irradiation is about 8 times, if the number of times of irradiation reaches a certain number of times or more, the crystal grain size does not increase and is saturated. That is, even if the number of times of irradiation is increased to a required number or more, the laser output cannot be effectively utilized, and the crystallization processing time is increased.
另外，若使光束寬度增大到必需寬度以上，則由於雷射脈衝能量固定，因此為了獲得規定的能量密度，必須縮短線束長度，在處理大尺寸的半導體膜時，處理效率降低。 Further, when the beam width is increased to a required width or more, since the laser pulse energy is fixed, in order to obtain a predetermined energy density, the length of the wire harness must be shortened, and when a large-sized semiconductor film is processed, the processing efficiency is lowered.
本案發明是以上述情況為背景而完成的，其目的在於提供一種能夠適當地確定雷射脈衝的照射次數及脈衝寬度而高效率地進行雷射退火處理的結晶半導體膜的製造方法。 The present invention has been made in view of the above circumstances, and an object of the invention is to provide a method for producing a crystalline semiconductor film which can efficiently perform laser annealing treatment by appropriately determining the number of times of irradiation of a laser pulse and the pulse width.
即，本發明的結晶半導體膜的製造方法於非單晶半導體膜上相對地掃描並照射線束形狀的脈衝雷射而進行結晶化；其特徵在於：上述脈衝雷射於掃描方向的光束剖面形狀中具有強度均勻的平坦部(光束寬度a)，將藉由該脈衝雷射照射而結晶化的半導體膜所形成的電晶體的上述掃描方向的通道區域寬度設為b；上述脈衝雷射具有照射脈衝能量密度E，該照射脈衝能量密度E低於藉由該脈衝雷射照射而於上述非單晶半導體膜上產生微結晶化的照射脈衝能量密度；將藉由上述照射脈衝能量密度E的脈衝雷射照射而結晶粒徑成長達到飽和時的照射次數設為nO，使脈衝雷射的照射次數n為(n0-1)以上； 使上述脈衝雷射的上述掃描方向上的每個脈衝的移動量c為b/2以下。 In other words, the method for producing a crystalline semiconductor film of the present invention is performed by relatively scanning a non-single-crystal semiconductor film and irradiating a pulse beam of a linear beam shape to perform crystallization; wherein the pulse is laser beam in the cross-sectional shape of the beam in the scanning direction. a flat portion having a uniform intensity (beam width a), and a width of a channel region in the scanning direction of the transistor formed by the semiconductor film crystallized by the pulsed laser irradiation is set to b; the pulsed laser has an irradiation pulse An energy density E, the irradiation pulse energy density E is lower than an irradiation pulse energy density that is microcrystallized on the non-single crystal semiconductor film by the pulsed laser irradiation; and a pulsed Ray by the above-mentioned irradiation pulse energy density E The number of times of irradiation when the crystal grain size grows saturated by irradiation is set to nO, and the number n of irradiations of the pulse laser is (n0-1) or more; The amount of movement c of each pulse in the scanning direction of the pulse laser described above is b/2 or less.
上述脈衝雷射如上所述，於掃描方向的光束剖面形狀中具有強度均勻的平坦部(光束寬度a)。該平坦部相對於最大能量強度，可利用90%以上之區域表示。 As described above, the pulsed laser has a flat portion (beam width a) having uniform intensity in the beam cross-sectional shape in the scanning direction. The flat portion can be expressed by a region of 90% or more with respect to the maximum energy intensity.
將藉由上述照射脈衝能量密度E的脈衝雷射照射而結晶粒徑成長達到飽和的照射次數設為n0。再者，將照射脈衝能量密度E設為低於藉由脈衝雷射照射而於上述非單晶半導體膜上產生微結晶化的照射脈衝能量密度的值。是否產生微結晶化可藉由電子顯微鏡照片等來判定。 The number of times of irradiation in which the crystal grain size growth is saturated by the pulsed laser irradiation of the irradiation pulse energy density E is set to n0. Further, the irradiation pulse energy density E is set to a value lower than the irradiation pulse energy density at which the microcrystallization is generated on the non-single-crystal semiconductor film by pulsed laser irradiation. Whether or not microcrystallization is generated can be determined by an electron microscope photograph or the like.
若使照射脈衝能量密度的值大於產生微結晶化的值，則結晶粒徑會變得極小，而使作為半導體的電子移動度達到1/10左右。 When the value of the irradiation pulse energy density is larger than the value at which microcrystallization is caused, the crystal grain size becomes extremely small, and the electron mobility as a semiconductor is about 1/10.
另外，所謂藉由照射脈衝能量密度E的脈衝雷射照射而結晶粒徑成長達到飽和，是指各粒徑一致且即便增加照射次數粒徑亦不變大的狀態。 In addition, the fact that the crystal grain size is saturated by the pulsed laser irradiation of the irradiation pulse energy density E means that the respective particle diameters are uniform, and the particle diameter does not become large even if the number of irradiations is increased.
而且，若雷射照射次數未達(n0-1)，則結晶粒徑的成長不充分，不同粒徑的結晶混合存在，而產生電子移動度的不均。根據相同的理由，較理想的是n0以上。 Further, when the number of laser irradiations is less than (n0-1), the growth of the crystal grain size is insufficient, and crystals having different particle diameters are mixed, and unevenness in electron mobility is generated. For the same reason, it is more desirable to be n0 or more.
另外，較理想的是使雷射照射次數n為3．n0以下。若超過3．n0，則生產性明顯降低。而且，根據相同的理由，更理想的是2．n0以下。 In addition, it is desirable to make the number of laser irradiations n to be 3. Below n0. If it exceeds 3. N0, the productivity is significantly reduced. Moreover, for the same reason, it is more desirable to 2. Below n0.
若將藉由上述脈衝雷射照射而結晶化的半導體膜上所形成的電晶體的掃描方向的通道區域寬度設為b，則使 脈衝雷射的掃描間距、即每個脈衝的移動量c為b/2以下。藉此，各通道區域中出現的雷射脈衝接縫為2條或3條以上，可減少電晶體的性能不均。另一方面，若移動量c大於b/2，且為b以下，則通道區域中的上述接縫為1條或2條，若移動量c大於b，則通道區域中的上述接縫為0條或1條，通道區域中的電晶體的性能不均增大。 When the width of the channel region in the scanning direction of the transistor formed on the semiconductor film crystallized by the pulsed laser irradiation is b, The scanning pitch of the pulse laser, that is, the amount of movement c of each pulse is b/2 or less. Thereby, there are two or more laser pulse joints in each channel region, which can reduce the performance unevenness of the transistor. On the other hand, if the movement amount c is larger than b/2 and is b or less, the seam in the passage region is one or two, and if the movement amount c is larger than b, the seam in the passage region is 0. Strips or strips, the performance of the transistors in the channel region is not uniform.
藉由上述雷射照射次數n及每個脈衝的移動量c，脈衝雷射的光束寬度a以a=n．c表示。較理想的是使此光束寬度為500μm以下。若過於增大光束寬度，則於使能量密度固定之情況下，脈衝雷射的長軸方向上的光束長度變小，因此能夠以一次掃描進行處理的面積變小，處理效率降低。 By the above-mentioned number of laser irradiations n and the amount of movement c of each pulse, the beam width a of the pulsed laser is a=n. c indicates. It is desirable to make the beam width 500 μm or less. When the beam width is excessively increased, the beam length in the long-axis direction of the pulse laser is reduced when the energy density is fixed. Therefore, the area that can be processed by one scan is small, and the processing efficiency is lowered.
並且，較理想的是脈衝雷射掃描方向的通道區域寬度為1mm以下。若縮小電晶體的區域寬度、即電晶體，則可縮短電子在電晶體中流通的時間，提高訊號處理速度，而可獲得性能優異的薄膜半導體。 Further, it is preferable that the width of the channel region in the pulse laser scanning direction is 1 mm or less. When the width of the region of the transistor, that is, the transistor, is reduced, the time for electrons to flow through the transistor can be shortened, and the signal processing speed can be improved, and a thin film semiconductor having excellent performance can be obtained.
成為本發明的處理對象的半導體並不限定於規定材質，可舉出Si作為較佳的材料。並且，脈衝雷射可舉出準分子雷射作為較佳的雷射。 The semiconductor to be processed by the present invention is not limited to a predetermined material, and Si is preferable as a material. Further, the pulsed laser may be an excimer laser as a preferred laser.
如以上所說明，根據本發明的結晶半導體膜的製造方法，其是於非單晶半導體膜上相對地掃描並照射線束形狀的脈衝雷射而進行結晶化的結晶半導體膜的製造方法；其中 上述脈衝雷射於掃描方向的光束剖面形狀中具有強度均勻的平坦部(光束寬度a)，將藉由該脈衝雷射照射而結晶化的半導體膜所形成的電晶體的上述掃描方向的通道區域寬度設為b；上述脈衝雷射具有照射脈衝能量密度E，該照射脈衝能量密度E低於藉由該脈衝雷射照射而於上述非單晶半導體膜上產生微結晶化的照射脈衝能量密度；將藉由上述照射脈衝能量密度E的脈衝雷射照射而結晶粒徑成長達到飽和時的照射次數設為n0，使脈衝雷射的照射次數n為(n0-1)以上；使上述脈衝雷射的上述掃描方向上的每個脈衝的移動量c為b/2以下；因此能夠藉由適當的脈衝雷射照射次數及每個脈衝的移動量而高效率地進行雷射退火處理。另外，將脈衝雷射的光束寬度設為適當的值，可獲得充分的線束長度，而且具有能夠進行高效率的處理的效果。 As described above, the method for producing a crystalline semiconductor film according to the present invention is a method for producing a crystalline semiconductor film which is relatively scanned on a non-single-crystal semiconductor film and irradiated with a pulsed laser beam of a linear beam shape to be crystallized; The pulsed laser beam has a flat portion (beam width a) having a uniform intensity in a beam cross-sectional shape in the scanning direction, and a channel region in the scanning direction of the transistor formed by the semiconductor film crystallized by the pulse laser irradiation. The width is set to b; the pulsed laser has an irradiation pulse energy density E, and the irradiation pulse energy density E is lower than an irradiation pulse energy density that is microcrystallized on the non-single-crystal semiconductor film by the pulsed laser irradiation; The number of times of irradiation when the crystal grain size is saturated by the pulsed laser irradiation of the irradiation pulse energy density E is n0, and the number n of irradiations of the pulse laser is (n0-1) or more; The amount of movement c of each pulse in the scanning direction is b/2 or less; therefore, the laser annealing treatment can be efficiently performed by the appropriate number of pulsed laser irradiations and the amount of movement of each pulse. Further, by setting the beam width of the pulse laser to an appropriate value, a sufficient harness length can be obtained, and an effect of high-efficiency processing can be obtained.
為讓本發明之上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。 The above described features and advantages of the present invention will be more apparent from the following description.
以下，對本發明的一個實施形態進行說明。 Hereinafter, an embodiment of the present invention will be described.
圖1表示對載置於移動台1上的基板照射包含線束狀準分子雷射的脈衝雷射3的狀態。基板上形成有非晶Si等非單晶半導體膜2。脈衝雷射3具有線束長度L及光束寬度a，藉由使移動台1以規定間距移動，而使脈衝雷射3進行掃描並以規定間距及照射次數照射於非單晶半導體膜 2上。 Fig. 1 shows a state in which a pulse laser 3 including a beam-shaped excimer laser is irradiated onto a substrate placed on the mobile station 1. A non-single crystal semiconductor film 2 such as amorphous Si is formed on the substrate. The pulsed laser 3 has a wire length L and a beam width a, and the pulsed laser 3 is scanned by moving the mobile station 1 at a predetermined pitch, and is irradiated to the non-single crystal semiconductor film at a predetermined pitch and number of times of irradiation. 2 on.
圖2是表示脈衝雷射3的掃描方向的光束剖面形狀的圖。具有相對於最大能量強度而具有90%以上的能量強度的平坦部，將該平坦部的寬度表示為光束寬度a。 FIG. 2 is a view showing a beam cross-sectional shape in the scanning direction of the pulse laser 3. A flat portion having an energy intensity of 90% or more with respect to the maximum energy intensity, and the width of the flat portion is expressed as a beam width a.
並且，脈衝雷射3在照射至非單晶半導體膜2上時，設定為該非單晶半導體膜2不會微結晶化的照射脈衝能量密度E。 Further, when the pulsed laser 3 is irradiated onto the non-single-crystal semiconductor film 2, the irradiation pulse energy density E at which the non-single-crystal semiconductor film 2 is not crystallized is set.
圖3是表示照射脈衝能量密度與由雷射脈衝照射所引起的結晶粒徑大小的關係圖。在照射脈衝能量密度低的區域中，隨著照射脈衝能量密度增大而結晶粒徑變大。例如若照射脈衝能量密度大於此中途的照射脈衝能量密度E1，則結晶粒徑急遽變大。另一方面，若照射脈衝能量密度增大至某種程度，則即便照射脈衝能量密度增大至其以上，結晶粒徑亦幾乎不增大，若超過某照射脈衝能量密度E2，則結晶粒徑急遽變小而產生微結晶化。因此上述照射脈衝能量密度E可利用E≦E2表示。 Fig. 3 is a graph showing the relationship between the energy density of the irradiation pulse and the crystal grain size caused by the irradiation of the laser pulse. In the region where the irradiation pulse energy density is low, the crystal grain size becomes larger as the irradiation pulse energy density increases. For example, if the irradiation pulse energy density is larger than the irradiation pulse energy density E1 in the middle, the crystal grain size becomes sharp and large. On the other hand, if the energy density of the irradiation pulse is increased to some extent, the crystal grain size hardly increases even if the energy density of the irradiation pulse is increased above it, and if it exceeds the energy density E2 of the irradiation pulse, the crystal grain size is The rush is small and microcrystallized. Therefore, the above-mentioned irradiation pulse energy density E can be expressed by E ≦ E2.
將照射脈衝能量密度設定為上述E之值，並照射至非單晶半導體膜2時，即便將照射次數設定為某次數以上，結晶粒徑成長亦會達到飽和。結晶粒徑成長的飽和根據掃描式電子顯微鏡(Scanning Electron Microscopy，SEM)照片來判定。 When the irradiation pulse energy density is set to the value of E described above and is irradiated to the non-single-crystal semiconductor film 2, even if the number of times of irradiation is set to a certain number or more, the crystal grain size growth is saturated. The saturation of the crystal grain size growth was determined based on a Scanning Electron Microscopy (SEM) photograph.
圖4是表示在將照射脈衝能量密度E設定為上述照射脈衝能量密度E1或照射脈衝能量密度E2的情況下，結晶粒徑相對於照射次數的關係的圖。在任一照射脈衝能量密 度的情況下，至某照射次數為止，隨著照射次數增加而結晶粒徑變大，但若達到某照射次數，則結晶粒徑成長在該照射次數以上時不再進行而達到飽和。將該照射次數表示為本發明的照射次數n0。 4 is a view showing the relationship between the crystal grain size and the number of times of irradiation when the irradiation pulse energy density E is set to the irradiation pulse energy density E1 or the irradiation pulse energy density E2. Energy density at any irradiation pulse In the case of the degree of irradiation, the crystal grain size increases as the number of times of irradiation increases. However, when the number of times of irradiation is reached, the crystal grain size grows at the time of the number of irradiations or more and does not proceed to saturation. The number of times of irradiation is indicated as the number of irradiations n0 of the present invention.
實際的照射次數n相對於上述照射次數n0，設定為(n0-1)以上且3．n0以下。藉此，能夠使非單晶半導體膜2有效且高效率地結晶化。 The actual number n of irradiations is set to be (n0-1) or more and 3. Below n0. Thereby, the non-single crystal semiconductor film 2 can be efficiently and efficiently crystallized.
於藉由上述脈衝雷射照射而結晶化的結晶化半導體膜中，以規定間隔形成薄膜半導體。在薄膜半導體中，分別具有規定的通道區域寬度b，該間隔較佳為設定為1mm以下。 A thin film semiconductor is formed at a predetermined interval in the crystallized semiconductor film crystallized by the above-described pulsed laser irradiation. In the thin film semiconductor, each has a predetermined channel region width b, and the interval is preferably set to 1 mm or less.
將非單晶半導體膜2上的薄膜半導體10的排列預定狀態示於圖5(a)~圖5(c)。各薄膜半導體10具有源極11、汲極12、及位於源極、汲極間的通道部13，該通道部13的脈衝雷射的掃描方向寬度成為通道區域寬度b。若對上述非單晶半導體膜2以掃描間距(每個脈衝的移動量)c照射脈衝雷射3並使其移動，則對應於每個脈衝的移動而於結晶化半導體膜上出現光束接縫3a。 The predetermined state of arrangement of the thin film semiconductors 10 on the non-single crystal semiconductor film 2 is shown in FIGS. 5(a) to 5(c). Each thin film semiconductor 10 has a source electrode 11, a drain electrode 12, and a channel portion 13 between the source and the drain. The width of the pulsed laser in the scanning direction of the channel portion 13 is the channel region width b. When the pulsed laser 3 is irradiated to the non-single-crystal semiconductor film 2 at a scanning pitch (movement amount per pulse) c, the beam joint appears on the crystallized semiconductor film corresponding to the movement of each pulse. 3a.
圖5(a)表示使每個脈衝的移動量c大於上述通道區域寬度b時的光束接縫3a的產生狀況。於此例中，光束接縫3a並不位於通道部13或出現1條，使薄膜半導體10的性能不均增大。 Fig. 5(a) shows the state of generation of the beam seam 3a when the amount of movement c of each pulse is made larger than the width b of the channel region. In this example, the beam seam 3a is not located in the channel portion 13 or one is present, so that the performance unevenness of the thin film semiconductor 10 is increased.
圖5(b)表示使每個脈衝的移動量c大於上述通道區域寬度b的1/2時的光束接縫3a的產生狀況。於此例中， 光束接縫3a在通道部13中出現1條或2條，雖然薄膜半導體10的性能不均減少，但並未充分減少。 Fig. 5(b) shows the state of occurrence of the beam seam 3a when the amount of movement c of each pulse is made larger than 1/2 of the width b of the channel region. In this case, One or two of the beam seams 3a appear in the channel portion 13, and although the performance unevenness of the thin film semiconductor 10 is reduced, it is not sufficiently reduced.
圖5(c)是本發明中規定的圖，表示使每個脈衝的移動量c為上述通道區域寬度的1/2以下時的光束接縫3a的產生狀況。於此例中，光束接縫3a在通道部13中出現2條或3條，而有效地減少薄膜半導體10的性能不均。 Fig. 5 (c) is a view defined in the present invention, showing a state in which the beam joint 3a is generated when the amount of movement c of each pulse is 1/2 or less of the width of the channel region. In this example, two or three light beam seams 3a appear in the channel portion 13, and the performance unevenness of the thin film semiconductor 10 is effectively reduced.
於上述每個脈衝的移動量c中，在將照射次數設定為n次的情況下，光束寬度a是以a=n．c表示。藉由上述設定可將每個脈衝的移動量c設定為較小，另外，照射次數亦為可良好地進行結晶化的次數，而不會增多到必需次數以上。其結果可使光束寬度減小至例如500μm以下，其結果可增大光束長度而高效率地處理大尺寸的非單晶半導體膜。 In the movement amount c of each of the above pulses, in the case where the number of times of irradiation is set to n times, the beam width a is a=n. c indicates. According to the above setting, the amount of movement c of each pulse can be set to be small, and the number of times of irradiation can be a number of times that crystallization can be performed satisfactorily, without increasing the number of times required. As a result, the beam width can be reduced to, for example, 500 μm or less, with the result that the beam length can be increased to efficiently process a large-sized non-single-crystal semiconductor film.
[實例1] [Example 1]
以下，對本發明的一個實例進行說明。 Hereinafter, an example of the present invention will be described.
將50nm厚的非晶Si作為非單晶半導體膜，按以下條件改變照射次數並照射脈衝雷射。 A 50 nm-thick amorphous Si was used as the non-single-crystal semiconductor film, and the number of times of irradiation was changed under the following conditions and a pulsed laser was irradiated.
準分子雷射：LSX315C/波長308nm、頻率300Hz Excimer laser: LSX315C / wavelength 308nm, frequency 300Hz
光束尺寸：光束長度500mm×光束寬度0.13mm Beam size: beam length 500mm × beam width 0.13mm
光束寬度為最大能量強度的90%以上的平坦部 a flat portion having a beam width of more than 90% of the maximum energy intensity
掃描間距：32.5μm~6.5μm Scanning pitch: 32.5μm~6.5μm
照射脈衝能量密度：320mJ/cm2 Irradiation pulse energy density: 320mJ/cm 2
通道區域寬度：40μm Channel area width: 40μm
於上述脈衝雷射中，照射脈衝能量密度達到產生微結 晶的照射脈衝能量密度以下，確認自照射次數4次至照射次數8次為止結晶粒徑逐漸成長，但照射次數8次以後，結晶粒徑成長達到飽和。 In the above pulsed laser, the energy density of the irradiation pulse reaches the micro-junction The crystal irradiation particle density was determined to be gradually increased from the number of times of irradiation to the number of times of irradiation 8 times, but the crystal grain size growth was saturated after 8 times of irradiation.
藉由SEM照片對以規定照射次數照射脈衝雷射的部位進行觀察，將該照片示於圖6。如圖6所示，在照射次數8次時，良好地結晶化，即便將照射次數增加至12、16、20次時，亦幾乎未發現結晶粒徑增加。 The portion where the pulsed laser beam was irradiated with a predetermined number of irradiations was observed by an SEM photograph, and the photograph is shown in Fig. 6 . As shown in Fig. 6, when the number of times of irradiation was 8 times, the crystals were well crystallized, and even when the number of times of irradiation was increased to 12, 16, or 20 times, the crystal grain size was hardly increased.
圖7是表示對應於照射次數的結晶粒徑的變化圖，直至達到照射次數8次為止，結晶粒徑隨著照射次數的增加而增大。在照射次數8次以後，未發現結晶粒徑增大。 Fig. 7 is a graph showing a change in crystal grain size corresponding to the number of times of irradiation, and the crystal grain size increases as the number of times of irradiation increases until the number of times of irradiation reaches eight times. After 8 times of irradiation, no increase in crystal grain size was observed.
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，故本發明之保護範圍當視後附之申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.
1‧‧‧移動台 1‧‧‧Mobile Station
2‧‧‧非單晶半導體膜 2‧‧‧Non-single crystal semiconductor film
3‧‧‧脈衝雷射 3‧‧‧pulse laser
3a‧‧‧光束接縫 3a‧‧‧beam seams
10‧‧‧薄膜半導體 10‧‧‧Thin Semiconductor
11‧‧‧源極 11‧‧‧ source
12‧‧‧汲極 12‧‧‧汲polar
13‧‧‧通道部 13‧‧‧Channel Department
a‧‧‧光束寬度 A‧‧‧beam width
b‧‧‧通道區域寬度 b‧‧‧Channel area width
c‧‧‧每個脈衝的移動量 c‧‧‧The amount of movement per pulse
L‧‧‧線束長度 L‧‧‧ harness length
圖1是表示本發明的一個實施形態中的對非單晶半導體膜照射脈衝雷射的狀態圖。 Fig. 1 is a view showing a state in which a pulse laser is irradiated to a non-single crystal semiconductor film in an embodiment of the present invention.
圖2同樣是表示脈衝雷射的掃描方向的光束剖面形狀的圖。 Fig. 2 is a view similarly showing a beam cross-sectional shape in the scanning direction of the pulse laser.
圖3同樣是表示脈衝雷射的照射脈衝能量密度與由脈衝雷射照射所引起的結晶粒徑大小的關係的圖 Fig. 3 is a view similarly showing the relationship between the energy density of the irradiation pulse of the pulse laser and the crystal grain size caused by the pulse laser irradiation.
圖4同樣是表示於脈衝雷射為規定的照射脈衝能量密度的情況下，照射次數與結晶粒徑的關係的圖。 4 is a view similarly showing the relationship between the number of times of irradiation and the crystal grain size when the pulse laser is a predetermined irradiation pulse energy density.
圖5(a)~圖5(c)同樣是表示每個脈衝的移動量 與通道區域寬度的關係中光束接縫的產生狀況的圖。 Figures 5(a) to 5(c) also show the amount of movement per pulse. A diagram of the generation of beam joints in relation to the width of the channel region.
圖6是表示本發明的一個實施例中的結晶化半導體的圖式代用照片。 Fig. 6 is a schematic view showing a substitute of a crystallized semiconductor in one embodiment of the present invention.
圖7同樣是表示粒徑變化相對於照射次數的關係的圖表。 Fig. 7 is also a graph showing the relationship between the change in particle diameter and the number of times of irradiation.
1‧‧‧移動台 1‧‧‧Mobile Station
2‧‧‧非單晶半導體膜 2‧‧‧Non-single crystal semiconductor film
3‧‧‧脈衝雷射 3‧‧‧pulse laser
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- 2010-09-17 KR KR1020127015735A patent/KR101259936B1/en active IP Right Grant
- 2010-09-17 WO PCT/JP2010/066174 patent/WO2011061991A1/en active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000183358A (en) * | 1998-07-17 | 2000-06-30 | Sony Corp | Manufacture of thin-film semiconductor device |
| JP2001053020A (en) * | 1999-08-06 | 2001-02-23 | Sony Corp | Crystallization of semiconductor thin film and manufacture of thin film semiconductor device |
| JP2002176180A (en) * | 2000-12-06 | 2002-06-21 | Hitachi Ltd | Thin film semiconductor element and its manufacturing method |
| JP2008091811A (en) * | 2006-10-05 | 2008-04-17 | Ihi Corp | Laser annealing method and laser annealer |
| JP2009004629A (en) * | 2007-06-22 | 2009-01-08 | Semiconductor Energy Lab Co Ltd | Method and apparatus for forming polycrystalline semiconductor film |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2011108987A (en) | 2011-06-02 |
| JP4947667B2 (en) | 2012-06-06 |
| TW201133572A (en) | 2011-10-01 |
| WO2011061991A1 (en) | 2011-05-26 |
| KR101259936B1 (en) | 2013-05-02 |
| CN102630336A (en) | 2012-08-08 |
| CN102630336B (en) | 2013-05-08 |
| KR20120073371A (en) | 2012-07-04 |
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