TWI606493B - Method for manufacturing crystalline semiconductor film - Google Patents
Method for manufacturing crystalline semiconductor film Download PDFInfo
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- TWI606493B TWI606493B TW102143352A TW102143352A TWI606493B TW I606493 B TWI606493 B TW I606493B TW 102143352 A TW102143352 A TW 102143352A TW 102143352 A TW102143352 A TW 102143352A TW I606493 B TWI606493 B TW I606493B
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- 239000004065 semiconductor Substances 0.000 title claims description 69
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 238000000034 method Methods 0.000 title description 10
- 239000013078 crystal Substances 0.000 claims description 58
- 229920006395 saturated elastomer Polymers 0.000 claims description 9
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 239000010408 film Substances 0.000 description 50
- 239000010409 thin film Substances 0.000 description 9
- 238000002425 crystallisation Methods 0.000 description 6
- 230000008025 crystallization Effects 0.000 description 6
- 239000002245 particle Substances 0.000 description 5
- 238000005224 laser annealing Methods 0.000 description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02678—Beam shaping, e.g. using a mask
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02691—Scanning of a beam
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
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- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Description
本發明是有關於一種結晶半導體膜的製造方法，其是在非單結晶半導體膜上使線形光束(Line Beam)形狀的脈衝雷射(Pulse Laser)一邊移動一邊進行多次照射(重疊照射，overlapped irradiation)。 The present invention relates to a method for producing a crystalline semiconductor film, which is characterized in that a pulse beam of a line beam shape is multi-illuminated while moving on a non-single-crystal semiconductor film (overlapped, overlapped) Irradiation).
一般來說，用於電視(TV)或個人電腦(PC)顯示器的薄膜電晶體(transistor)是藉由非晶(amorphous)矽(以下稱為a-Si)構成，利用某些的方式使矽結晶化(以下稱為p-Si)，而能顯著地提升作為TFT的性能。現在，作為在低溫下的矽結晶化的製程的準分子雷射退火(excimer laser annealing)技術已經實用化，頻繁地利用於手機等小型顯示器方面的用途，更進一步地進行對大畫面顯示器等的實用化。 In general, a thin film transistor for a television (TV) or personal computer (PC) display is constructed by amorphous 以下 (hereinafter referred to as a-Si), which is used in some ways. Crystallization (hereinafter referred to as p-Si) can significantly improve the performance as a TFT. Now, the excimer laser annealing technology, which is a process for crystallization of ruthenium at a low temperature, has been put into practical use, and is frequently used for small-sized displays such as mobile phones, and further for large-screen displays and the like. Practical.
此雷射退火法是以具有高脈衝能量的準分子雷射照射非單結晶半導體膜，使吸收光能量的半導體成為熔融或半熔融的狀態，之後急速地冷卻而在凝固的時候結晶化的方法。在此時為了處理廣範圍，使整形為線形光束形狀的脈衝雷射相對地在短軸方向一 邊掃描一邊照射。通常是以設置了非單結晶半導體膜的設置台移動而進行脈衝雷射的掃描。 This laser annealing method is a method in which a non-single-crystal semiconductor film is irradiated with a quasi-molecular laser having a high pulse energy, and a semiconductor that absorbs light energy is melted or semi-molten, and then rapidly cooled to be crystallized at the time of solidification. . At this time, in order to process a wide range, the pulse laser shaped into a linear beam shape is relatively in the short axis direction. Irradiate while scanning. Usually, scanning of a pulse laser is performed by moving a mounting table provided with a non-single-crystal semiconductor film.
在上述脈衝雷射的掃描中，為了使脈衝雷射多次照射在非單結晶半導體膜的同一位置，而以指定的間距使脈衝雷射往掃描方向移動(例如參照專利文獻1)。藉此而可以進行對大尺寸的半導體膜的雷射退火處理。另外，在專利文獻1中，其課題是伴隨著雷射的依次掃瞄所造成結晶的不均勻性(偏差)是導致元件間的偏差產生的原因。 In the scanning of the pulsed laser, the pulsed laser is moved in the scanning direction at a predetermined pitch in order to irradiate the pulsed laser at the same position of the non-single-crystal semiconductor film a plurality of times (see, for example, Patent Document 1). Thereby, laser annealing treatment for a large-sized semiconductor film can be performed. Further, in Patent Document 1, the problem is that the unevenness (deviation) of crystals caused by the sequential scanning of the laser is a cause of variation between elements.
因此，為解決此課題，在專利文獻1中，是使在脈衝雷射的掃描方向的通道區域(channel region)的尺寸S與脈衝雷射的掃描間距P大致為S=nP(n是除了0以外的整數)，使結晶性矽膜的結晶分布在脈衝雷射光的掃描方向為周期性的變化圖樣(pattern)，而使在各薄膜電晶體的通道區域的結晶性矽膜的結晶性分布的圖樣的周期的變化成為相等。 Therefore, in order to solve this problem, in Patent Document 1, the size S of the channel region in the scanning direction of the pulse laser and the scanning pitch P of the pulse laser are approximately S=nP (n is 0 except for 0). In addition to the integer), the crystal distribution of the crystalline ruthenium film is periodically changed in the scanning direction of the pulsed laser light, and the crystallinity distribution of the crystalline ruthenium film in the channel region of each of the thin film transistors is made. The change in the period of the pattern becomes equal.
【特許文獻1】特開平10-163495號公報 [Patent Document 1] Japanese Patent Laid-Open No. Hei 10-163495
但是，要將掃描間距的尺寸的整數倍控制成符合於通道區域的尺寸，不但伴隨著精度上的困難性，如果要進行高精度的掃描的話，裝置費用將大幅的提高。 However, controlling the integer multiple of the scanning pitch size to conform to the size of the channel region is accompanied by difficulty in accuracy, and the device cost is greatly improved if high-precision scanning is to be performed.
如果光束的短軸方向寬度充足的話，則能增大掃描間距，而 能防止在通道區域僅能受到每個脈衝的光束邊緣掃描的狀況。但是在此狀態下，在通道區域受到一次光束邊緣的照射的電晶體與在通道區域上未受到光束邊緣的照射的電晶體(0次)同時併存，而在電晶體間產生了在特性上的偏差。 If the width of the beam in the short-axis direction is sufficient, the scanning pitch can be increased, and It can prevent the situation that the channel area can only be scanned by the beam edge of each pulse. However, in this state, the transistor which is irradiated with the edge of the primary beam in the channel region coexists with the transistor (0 times) which is not irradiated by the edge of the beam in the channel region, and the characteristic is generated between the transistors. deviation.
因此，使掃描間距變小，在通道區域中必須以指定的次數來照射每個脈衝的光束邊緣，而能使結晶性的偏差減少。藉此，上述受到邊緣的照射的電晶體與未受到邊緣的部分照射的電晶體將不會併存。並且，也由於將次數之差異控制在1次，與邊緣的照射有無相比較而言，特性的偏差顯著地減少。 Therefore, the scanning pitch is made small, and the beam edge of each pulse must be irradiated in a predetermined number of times in the channel region, and the variation in crystallinity can be reduced. Thereby, the above-mentioned transistor which is irradiated by the edge and the transistor which is not irradiated by the edge will not coexist. Further, since the difference in the number of times is controlled once, the variation in characteristics is remarkably reduced as compared with the presence or absence of the irradiation of the edge.
如此，受邊緣部分照射的半導體上的線狀的區域，由於認為是會對在通道的載子(carrier)的移動產生影響，因此考慮以使線狀的邊緣位於沿著與通道寬為正交方向(亦即，通道內的載子的移動方向)的方式來設定脈衝雷射的掃描方向。藉此，對沒有進行到光束邊緣的照射的通道區域的部分，期望有良好的載子移動的特性。 Thus, the linear region on the semiconductor illuminated by the edge portion is considered to affect the movement of the carrier in the channel, so that the linear edge is located orthogonal to the channel width. The direction of scanning (ie, the direction of movement of the carriers within the channel) is set to the scanning direction of the pulsed laser. Thereby, it is desirable to have a good carrier movement characteristic for the portion of the passage region where the irradiation to the edge of the beam is not performed.
但是，在上述掃描方向中，像是通道寬小於通道長(通道寬/通道長為1以下)這樣的電晶體與(通道寬/通道長超過1)的電晶體相比，由於通道寬相對的變小，因此在通道區域中受到上述邊緣照射的線狀的區域與未受到邊緣照射的區域在寬方向並存。由此，而產生在通道寬方向的電阻等的不均勻性、在載子的移動中產生了在寬方向的不均勻性，而存在有恐怕對電晶體特性造成影響的問題。並且，邊緣施加在源極(source)或汲極(drain)的一部分 上，亦會導致有在寬方向的不均勻性的問題。 However, in the above scanning direction, a transistor such as a channel having a channel width smaller than a channel length (channel width/channel length of 1 or less) is compared with a transistor having a channel width/channel length exceeding 1 due to a channel width. As a result, the linear region which is irradiated with the above-mentioned edge in the channel region and the region which is not irradiated with the edge coexist in the width direction. As a result, unevenness in resistance or the like in the channel width direction occurs, and unevenness in the width direction occurs in the movement of the carrier, and there is a problem that the transistor characteristics may be affected. And the edge is applied to the source or a part of the drain It also causes problems with unevenness in the width direction.
以上述情況作為背景而實施，本發明的目的在於提供能夠不需要高精度的脈衝雷射的掃描、降低電晶體的特性的偏差及良好地進行結晶化等的結晶半導體膜的製造方法。 In view of the above, it is an object of the present invention to provide a method for producing a crystalline semiconductor film which can perform scanning without requiring high-precision pulsed laser, variation in characteristics of the transistor, and crystallization.
即，本發明的結晶半導體膜的製造方法為對非單結晶半導體膜以光束短軸寬為100~500μm、在光束短軸方向的光束截面形狀具有平坦部的線形光束形狀的脈衝雷射相對地掃描，而使每個脈衝移動，以照射次數為n對上述非單結晶半導體膜重疊照射的結晶半導體膜的製造方法，其特徵在於：在上述半導體膜形成的電晶體的通道長為b(100μm以下)；上述脈衝雷射具有低於藉由上述脈衝雷射的照射而在上述非單結晶半導體膜產生微晶(microcrystal)化之照射脈衝能量密度，且藉由多次的照射使結晶粒徑成長飽和的照射脈衝能量密度E；藉由上述照射脈衝雷射能量密度E的脈衝雷射的照射，上述結晶粒徑成長飽和時的照射次數為n0、上述脈衝雷射的照射次數n為(n0-1)以上；上述脈衝雷射的掃描方向為上述電晶體的通道長方向，且上述每個脈衝的移動量c小於b。 That is, the method for manufacturing a crystalline semiconductor film according to the present invention is a pulse laser beam of linear shape of the non-monocrystalline semiconductor film is a beam width of minor axis 100 ~ 500 μ m, having a flat portion in the cross-sectional shape of the beam short axis direction of the light beam A method of manufacturing a crystalline semiconductor film in which the pulse is n-aligned to irradiate the non-single-crystal semiconductor film with a number of times of irradiation, and the channel length of the transistor formed in the semiconductor film is b. (100 μm or less); the pulsed laser light has an irradiation pulse energy density lower than that of the non-single-crystallized semiconductor film by the irradiation of the pulsed laser, and is irradiated by multiple times The irradiation pulse energy density E for saturating the crystal grain size growth; and the irradiation of the pulsed laser having the irradiation pulse laser energy density E, the number of times of irradiation when the crystal grain size is saturated is n0, and the number of times of the pulse laser irradiation n is (n0-1) or more; the scanning direction of the pulse laser is the channel length direction of the transistor, and the movement amount c of each pulse is smaller than b.
第2的本發明的結晶半導體膜的製造方法是在上述第1的本發明中，其特徵為上述脈衝雷射照射次數n為(n0-1)以上、3．n0以下。 In the second aspect of the invention, the method for producing a crystalline semiconductor film according to the second aspect of the invention is characterized in that the number n of pulsed laser irradiations is (n0-1) or more and 3. Below n0.
第3的本發明的結晶半導體膜的製造方法是在上述第1或第2的本發明中，其特徵為上述移動量小於b/2。 In the third or second aspect of the invention, the method for producing a crystalline semiconductor film according to the third aspect of the invention is characterized in that the amount of movement is less than b/2.
第4的本發明的結晶半導體膜的製造方法是在上述第1~第3的本發明的任一中，其特徵為上述移動量為5μm以上。 In the method of producing the crystalline semiconductor film of the present invention according to the fourth aspect of the present invention, the method of the present invention is characterized in that the amount of movement is 5 μm or more.
第5的本發明的結晶半導體膜的製造方法是在上述第1~第4的本發明的任一中，其特徵為上述電晶體的通道寬與通道長的比(通道寬/通道長)為1以下。 The method for producing a crystalline semiconductor film according to the fifth aspect of the present invention, wherein the ratio of the channel width to the channel length (channel width/channel length) of the transistor is 1 or less.
第6的本發明的結晶半導體膜的製造方法是在上述第1~第5的本發明的任一中，其特徵為上述非單結晶半導體是矽。 In the method of producing the crystalline semiconductor film of the present invention according to any one of the first to fifth aspects of the present invention, the non-single crystal semiconductor is germanium.
第7的本發明的結晶半導體膜的製造方法是在上述本發明的第1~第6的任一中，其特徵為上述脈衝雷射是準分子雷射。 The method of producing a crystalline semiconductor film according to the seventh aspect of the present invention, wherein the pulsed laser is a excimer laser.
如上述，上述脈衝雷射具有在短軸方向的光束截面形狀強度平坦的平坦部(光束寬a)。而由平均上述平坦部的強度而能算出脈衝雷射的最大能量強度。並且，通常在平坦部的兩側具有往外側而強度逐漸減少的陡度部(steepness)。 As described above, the pulsed laser has a flat portion (beam width a) in which the intensity of the cross-sectional shape of the beam in the short-axis direction is flat. On the other hand, the maximum energy intensity of the pulsed laser can be calculated by averaging the intensity of the flat portion. Further, there is usually a steepness on the both sides of the flat portion which is gradually decreased in strength toward the outside.
將藉由上述脈衝雷射的照射脈衝能量密度E的脈衝雷射的照射而使結晶粒徑成長飽和時的照射次數的最小次數設為n0。並且將照射脈衝能量密度E設為低於藉由脈衝雷射的照射而在上述非單結晶半導體膜產生微晶化的照射脈衝能量密度的值。微晶化是否生成，能夠藉由電子顯微鏡照片等加以判斷。 The minimum number of times of irradiation when the crystal grain size is saturated by the irradiation of the pulse laser of the irradiation pulse energy density E of the pulse laser is set to n0. Further, the irradiation pulse energy density E is set to a value lower than the irradiation pulse energy density at which the non-single-crystal semiconductor film is crystallized by the irradiation of the pulsed laser. Whether or not microcrystallization is generated can be judged by an electron microscope photograph or the like.
照射脈衝能量密度的值若設為比產生微晶化的值更大，則結晶粒徑將變為極端小，作為半導體的電子移動度將變為1/10的程度。 When the value of the irradiation pulse energy density is larger than the value of the microcrystallization, the crystal grain size becomes extremely small, and the electron mobility of the semiconductor becomes 1/10.
並且，所謂的藉由照射脈衝能量密度E的脈衝雷射的照射而使結晶粒徑成長飽和，就是個別的粒徑全都是即使增加照射次數，粒徑也不會增大的狀態。 Further, the crystal grain size is saturated by the irradiation of the pulsed laser light having the pulse energy density E, that is, the individual particle diameters are all in a state in which the particle diameter does not increase even if the number of times of irradiation is increased.
再者，雷射照射次數若未達到(n0-1)則結晶粒徑的成長不充分，相異粒徑的結晶混在一起，而產生電子移動度的偏差。依同樣的理由較佳的是在n0以上。 Further, if the number of times of laser irradiation is not up to (n0-1), the growth of the crystal grain size is insufficient, and the crystals of the different particle diameters are mixed, and variations in electron mobility are caused. For the same reason, it is preferable to be above n0.
並且，雷射的照射次數n較佳是設為3．n0以下。若超過3．n0，則生產性會顯著的減少。再者，依同樣的理由，雷射的照射次數n更佳是設為2．n0以下。 Moreover, the number of irradiations n of the laser is preferably set to 3. Below n0. If it exceeds 3. N0, the productivity will be significantly reduced. Furthermore, for the same reason, the laser irradiation number n is preferably set to 2. Below n0.
進行上述脈衝雷射的照射時，若將在半導體膜上的電晶體的通道長設為b，而將脈衝雷射的掃描間距，也就是每個脈衝的移動量設為c小於b。藉此，在各通道區域出現的雷射脈衝的接縫會變為1條或2條以上，而能夠減少電晶體的性能偏差。另一方面，若移動量c小於b/2，則在通道區域的上述接縫變為n條或(n+1)條以上(但是n為2以上的整數)。若移動量c變為比b大，則在通道區域的上述接縫變為0條或1條，在通道區域的電晶體的性能偏差變大。 When the pulse laser is irradiated, if the channel length of the transistor on the semiconductor film is b, the scanning pitch of the pulse laser, that is, the amount of movement per pulse is c is smaller than b. Thereby, the number of seams of the laser pulses appearing in each channel region becomes one or two or more, and the performance variation of the transistor can be reduced. On the other hand, when the movement amount c is smaller than b/2, the seam in the channel region becomes n or (n+1) or more (but n is an integer of 2 or more). When the amount of movement c becomes larger than b, the seam in the passage region becomes zero or one, and the variation in the performance of the transistor in the passage region becomes large.
另外，電晶體也可以是在脈衝雷射的照射時形成通道區域。另外，電晶體也可以是在那之後形成通道區域。 Alternatively, the transistor may be formed as a channel region upon irradiation of a pulsed laser. Alternatively, the transistor may be formed after that.
另外，以本發明為對象的半導體膜的通道長被視為是100μm以下。而且，若在上述範圍中的話，則作為本發明並無特別限制，較為理想的能夠以6~40μm的通道長來表示。 In addition, the channel length of the semiconductor film to which the present invention is applied is regarded as 100 μm or less. Further, the present invention is not particularly limited as long as it is in the above range, and is preferably represented by a channel length of 6 to 40 μm.
藉由上述雷射照射次數n與每個脈衝的移動量c，脈衝雷射的光束寬a表示為a=n．c。上述光束寬較佳為100~500μm。若光束寬太大，在能量密度維持在一定的情況下，由於在脈衝雷射的長軸方向的光束長會變小，因此一次掃描能夠處理的面積變小，處理效率降低。並且，若光束寬變為小於100μm，則掃描間距變小，生產效率降低。 With the above-described number of laser irradiations n and the amount of movement c of each pulse, the beam width a of the pulsed laser is expressed as a=n. c. The above beam width is preferably from 100 to 500 μm. If the beam width is too large, and the energy density is maintained constant, since the beam length in the long-axis direction of the pulse laser becomes small, the area that can be processed by one scan becomes small, and the processing efficiency is lowered. Further, when the beam width becomes less than 100 μm, the scanning pitch becomes small, and the production efficiency is lowered.
並且，作為本發明，每個脈衝的移動量並未限制在特定的量，舉例來說，較理想的能夠為5μm以上。 Further, as the present invention, the amount of movement per pulse is not limited to a specific amount, and for example, it is preferably 5 μm or more.
作為本發明的處理對象的半導體，未限定於特定的材料，但能列舉較理想的矽。另外，作為脈衝雷射，能列舉較理想的準分子雷射。並且，在本發明的製造方法中，除了使非單結晶半導體膜結晶化以外的情況，亦包含對結晶半導體膜進行單晶化等改質的情況。 The semiconductor to be processed in the present invention is not limited to a specific material, but a preferred crucible can be cited. Further, as the pulse laser, a preferred excimer laser can be cited. Further, in the production method of the present invention, in addition to the crystallization of the non-single crystal semiconductor film, the crystal semiconductor film may be modified by single crystal or the like.
如以上說明，根據本發明的結晶半導體膜的製造方法，其為對非單結晶半導體膜以光束短軸寬為100~500μm，在光束短軸方向的光束截面形狀具有平坦部的線形光束形狀的脈衝雷射，相對地掃描而使每個脈衝移動，以照射次數n對上述非單結晶半 導體膜重疊照射進行結晶化的結晶半導體膜的製造方法，包括： 在上述半導體膜形成的電晶體的通道長設為b(100μm)以下； 上述脈衝雷射具有低於藉由上述脈衝雷射的照射而在上述非單結晶半導體膜產生微晶化的照射脈衝能量密度，且藉由多次的照射使結晶粒徑成長飽和的照射脈衝能量密度E； 藉由照射脈衝能量密度E的脈衝雷射的照射，上述結晶粒徑成長飽和時的照射次數為n0，上述脈衝雷射的照射次數n為(n0-1)以上； 由於上述脈衝雷射的掃描方向為上述電晶體的通道的長方向，且將上述每個脈衝的移動量c設為小於b，因此藉由理想的脈衝雷射照射次數與每個脈衝的移動量而能夠有效率的進行雷射退火處理。並且，由於光束邊緣的照射而能夠使電晶體特性的偏差減少。 As described above, the method for producing a crystalline semiconductor film according to the present invention is such that the non-single-crystal semiconductor film has a linear beam shape having a short beam width of 100 to 500 μm and a beam cross-sectional shape in the short-axis direction of the beam having a flat portion. Pulsed laser, relative to scanning, moving each pulse to the above-mentioned non-single crystal half with the number of irradiations n A method for producing a crystalline semiconductor film in which a conductor film is superimposed and irradiated to crystallization includes: The channel length of the transistor formed on the semiconductor film is set to be b (100 μm) or less; The pulsed laser has an irradiation pulse energy density lower than that of the non-single-crystal semiconductor film by the irradiation of the pulsed laser, and the irradiation pulse energy is saturated by the plurality of irradiations. Density E; The number of times of irradiation when the crystal grain size is saturated is n0, and the number n of irradiation times of the pulse laser is (n0-1) or more by irradiation with a pulsed laser having a pulse energy density E; Since the scanning direction of the pulsed laser is the long direction of the channel of the transistor, and the amount of movement c of each pulse is set to be smaller than b, the number of ideal laser irradiations and the amount of movement of each pulse are obtained. The laser annealing treatment can be performed efficiently. Further, variations in transistor characteristics can be reduced due to irradiation of the beam edge.
1‧‧‧移動台 1‧‧‧Mobile Station
2‧‧‧非單結晶半導體膜 2‧‧‧Non-single crystalline semiconductor film
3‧‧‧脈衝雷射 3‧‧‧pulse laser
3a‧‧‧光束接縫 3a‧‧‧beam seams
10‧‧‧薄膜半導體 10‧‧‧Thin Semiconductor
11‧‧‧源極 11‧‧‧ source
12‧‧‧汲極 12‧‧‧汲polar
13‧‧‧通道部 13‧‧‧Channel Department
圖1表示在本發明的一實施形態中，對非單結晶半導體膜以脈衝雷射照射的狀態的圖。 Fig. 1 is a view showing a state in which a non-single-crystal semiconductor film is irradiated with a pulsed laser in an embodiment of the present invention.
圖2同樣地表示脈衝雷射的掃描方向的光束截面形狀的圖。 Fig. 2 is a view similarly showing the cross-sectional shape of the beam in the scanning direction of the pulse laser.
圖3同樣地表示依據脈衝雷射的照射脈衝能量密度與脈衝雷射的照射，結晶粒徑的尺寸的關係圖。 Fig. 3 similarly shows a relationship between the energy density of the irradiation pulse according to the pulse laser and the irradiation of the pulsed laser, and the size of the crystal grain size.
圖4同樣地表示脈衝雷射在指定的照射脈衝能量密度的情況下，照射次數與結晶粒徑的關係的圖。 Fig. 4 is a view similarly showing the relationship between the number of times of irradiation and the crystal grain size in the case where the pulse laser has a specified irradiation pulse energy density.
圖5(a)、圖5(b)、圖5(c)同樣地表示在每個脈衝的移動量與通道區域寬的關係中，光束接縫的發生狀況的圖。 5(a), 5(b), and 5(c) are similar views showing the state of occurrence of the beam joint in the relationship between the amount of movement of each pulse and the width of the channel region.
圖6表示在本發明的一實施例中結晶半導體的圖示代用照片。 Fig. 6 shows a pictorial substitute photograph of a crystalline semiconductor in an embodiment of the present invention.
圖7同樣地表示粒徑變化對於照射次數的關係的圖表。 Fig. 7 similarly shows a graph showing the relationship between the change in particle diameter and the number of irradiations.
在以下說明本發明的一實施形態。 An embodiment of the present invention will be described below.
圖1表示對載置於移動台1上的基板以包含線形光束形狀的準分子雷射的脈衝雷射3照射的狀態。在基板形成有例如膜厚35~55nm的非晶矽等的非單結晶半導體膜2。另外，作為本發明，膜厚不限定於上述範圍。 Fig. 1 shows a state in which a substrate placed on a mobile station 1 is irradiated with a pulsed laser 3 comprising a quasi-molecular laser having a linear beam shape. A non-single crystal semiconductor film 2 such as an amorphous germanium having a film thickness of 35 to 55 nm is formed on the substrate. Further, as the present invention, the film thickness is not limited to the above range.
脈衝雷射3具有線形光束長L及光束寬a，藉由使移動台1以指定的間距移動，而一邊使脈衝雷射3掃描一邊以指定的間距及照射次數照射於非單結晶半導體膜2上。並且，脈衝雷射3的掃描只要是對非單結晶半導體膜2相對地進行的話就可以，也可以如上所述使非單結晶半導體膜2移動來實施，也可以使脈衝雷射3那一方移動。並且也能夠是組合兩者。 The pulsed laser 3 has a linear beam length L and a beam width a, and by moving the mobile station 1 at a predetermined pitch, the pulsed laser 3 is scanned while irradiating the non-single-crystal semiconductor film 2 at a predetermined pitch and number of times of irradiation. on. Further, the scanning of the pulse laser 3 may be performed on the non-single crystal semiconductor film 2, or the non-single crystal semiconductor film 2 may be moved as described above, or the pulse laser 3 may be moved. . And it can also be a combination of both.
圖2表示的是脈衝雷射3的掃描方向的光束截面形狀。相對於最大能量強度，具有96%以上的能量強度的高強度範圍，且上述高強度範圍的幾乎都形成平坦部。上述平坦部的寬表示為光束寬a。 Fig. 2 shows the cross-sectional shape of the beam in the scanning direction of the pulsed laser 3. A high-strength range having an energy intensity of 96% or more with respect to the maximum energy intensity, and almost all of the above-described high-strength ranges form a flat portion. The width of the above flat portion is expressed as the beam width a.
並且，在照射非單結晶半導體膜2時，脈衝雷射3是設 定為上述非單結晶半導體膜2不會微晶化的照射脈衝能量密度E。作為照射脈衝能量密度，例如以320~420mJ/cm2為例。但是作為本發明，照射脈衝能量密度並不限制於特定的範圍。 Further, when the non-single-crystal semiconductor film 2 is irradiated, the pulse laser 3 is set to an irradiation pulse energy density E in which the non-single-crystal semiconductor film 2 is not crystallized. As the irradiation pulse energy density, for example, 320 to 420 mJ/cm 2 is exemplified. However, as the present invention, the irradiation pulse energy density is not limited to a specific range.
圖3表示依據照射脈衝能量密度及脈衝雷射的照射，結晶粒徑的尺寸關係的圖。在照射脈衝能量密度低的範圍中照射脈衝能量密度增加連帶地使結晶粒徑增大。例如，若在那中途的照射脈衝能量密度變得比照射脈衝能量密度E1大時，則結晶粒徑會急速地增大。另一方面，若照射脈衝能量密度增大到某種程度時，即使更進一步地增大照射脈衝能量密度，幾乎沒有結晶粒徑的增大，若超越某個照射脈衝能量密度E2，則結晶粒徑就會急速變小而產生微晶化。從而，上述照射脈衝能量密度E能以EE2表示。 Fig. 3 is a view showing the dimensional relationship of the crystal grain size in accordance with the irradiation pulse energy density and the irradiation of the pulsed laser. In the range where the irradiation pulse energy density is low, the irradiation pulse energy density is increased to increase the crystal grain size. For example, if the energy density of the irradiation pulse in the middle becomes larger than the irradiation pulse energy density E1, the crystal grain size rapidly increases. On the other hand, if the energy density of the irradiation pulse is increased to some extent, even if the energy density of the irradiation pulse is further increased, there is almost no increase in the crystal grain size, and if the energy density E2 of an irradiation pulse is exceeded, the crystal grain is obtained. The diameter will rapidly become smaller and cause microcrystallization. Thus, the above-mentioned irradiation pulse energy density E can be E E2 said.
將照射脈衝能量密度設定為上述E值，在對非單結晶半導體膜2照射時，也設定某個次數以上的照射次數，而使結晶粒徑成長飽和。結晶粒徑的成長飽和是經由SEM照片來判斷。 When the irradiation pulse energy density is set to the above-described E value, when the non-single crystal semiconductor film 2 is irradiated, the number of times of irradiation is set to be more than a certain number of times, and the crystal grain size is grown to be saturated. The growth saturation of the crystal grain size is judged by the SEM photograph.
圖4為將照射脈衝能量密度E設定為上述照射脈衝能量密度E1或照射脈衝能量密度E2的情況下，表示結晶粒徑對照射次數的關係的圖。任一的照射脈衝能量密度的情況下也是直到某個照射次數前，照射次數的增加會連帶使結晶粒徑變大，但當到達某個照射次數則結晶粒徑的成長就無法再進行而飽和。此照射次數在本發明中是以照射次數n0表示。 4 is a graph showing the relationship between the crystal grain size and the number of times of irradiation when the irradiation pulse energy density E is set to the above-described irradiation pulse energy density E1 or irradiation pulse energy density E2. In the case of any of the irradiation pulse energy densities, the increase in the number of irradiations will increase the crystal grain size until a certain number of irradiations. However, when a certain number of irradiations is reached, the growth of the crystal grain size cannot be performed and is saturated. . This number of irradiations is represented by the number of irradiations n0 in the present invention.
對於上述照射次數n0，實際的照射次數n是設定為(n0-1)以上、3．n0以下。藉此，而能使非單結晶半導體膜2有效果且有效 率地結晶化。 For the above-mentioned number of irradiations n0, the actual number of irradiations n is set to be (n0-1) or more, 3. Below n0. Thereby, the non-single crystal semiconductor film 2 can be made effective and effective. Crystallize at a rate.
藉由上述脈衝雷射的照射而結晶化的結晶半導體膜是以指定的間距形成薄膜半導體。上述間距較理想的是設定為1mm以下。並且，薄膜半導體具有各種指定的通道長b，上述通道長b為100μm以下，較理想的設計是在6~40μm的長度。 The crystalline semiconductor film crystallized by the irradiation of the above-described pulsed laser forms a thin film semiconductor at a predetermined pitch. The above spacing is preferably set to be 1 mm or less. Further, the thin film semiconductor has various specified channel lengths b, and the channel length b is 100 μm or less, and the ideal design is 6 to 40 μm .
在圖5中表示在非單結晶半導體膜2上的薄膜半導體10的排列預定狀態。各薄膜半導體10預先具有源極11、汲極12、位在源極11及汲極12之間的通道部13，上述通道部13的脈衝雷射的掃描方向形成有通道長b。若對上述非單結晶半導體膜2藉由掃描間距(每個脈衝的移動量)c而使脈衝雷射3照射及移動，則對應於每個脈衝的移動，而在結晶化半導體膜上呈現出光束接縫3a。 The predetermined state of arrangement of the thin film semiconductors 10 on the non-single-crystal semiconductor film 2 is shown in FIG. Each of the thin film semiconductors 10 has a source 11 and a drain 12 in the channel portion 13 between the source 11 and the drain 12, and a channel length b is formed in the scanning direction of the pulsed laser of the channel portion 13. When the pulse laser 3 is irradiated and moved by the scanning pitch (the amount of movement per pulse) c of the non-single-crystal semiconductor film 2, it appears on the crystallized semiconductor film corresponding to the movement of each pulse. Beam joint 3a.
圖5(a)表示每個脈衝的移動量c較上述通道長b大之情況下光束接縫3a的發生狀況。在此例中，當光束接縫3a未位在通道部13(0條)、出現1條，薄膜半導體10的特性偏差增大。 Fig. 5(a) shows the state of occurrence of the beam joint 3a in the case where the amount of movement c of each pulse is larger than the length b of the above-mentioned passage. In this example, when the beam seam 3a is not positioned in the channel portion 13 (0 strips), one characteristic occurs, and the characteristic deviation of the thin film semiconductor 10 is increased.
圖5(b)表示每個脈衝的移動量c為上述通道長b的1/2以上、小於通道長b的情況下的光束接縫3a的發生狀況。在此例中，當光束接縫3a在通道部13出現1條或2條，薄膜半導體10的特性偏差與圖5(a)相較下大幅的減低。 Fig. 5(b) shows the state of occurrence of the beam joint 3a when the amount of movement c of each pulse is 1/2 or more of the channel length b and smaller than the channel length b. In this example, when one or two of the beam seams 3a appear in the channel portion 13, the characteristic deviation of the thin film semiconductor 10 is greatly reduced as compared with Fig. 5(a).
圖5(c)為表示每個脈衝的移動量c小於上述通道長b的1/2的情況下的光束接縫3a的發生狀況。在此例中，當光束接縫3a在通道部13出現n或(n+1)條以上(但是n為2以上的整數)，則薄膜半導體10的特性偏差顯著減低。 Fig. 5(c) shows the state of occurrence of the beam joint 3a in the case where the amount of movement c of each pulse is smaller than 1/2 of the channel length b. In this example, when the beam seam 3a appears n or (n+1) or more in the channel portion 13, (but n is an integer of 2 or more), the characteristic deviation of the thin film semiconductor 10 is remarkably reduced.
[實施例1] [Example 1]
在以下說明本發明的一實施例。將50nm厚的非晶矽作為非單結晶半導體膜，在以下的條件下改變照射次數而進行脈衝雷射的照射。 An embodiment of the present invention will be described below. A 50 nm-thick amorphous iridium was used as a non-single-crystal semiconductor film, and the number of times of irradiation was changed under the following conditions to perform pulsed laser irradiation.
準分子雷射：LSX315C/波長308nm、頻率300Hz Excimer laser: LSX315C / wavelength 308nm, frequency 300Hz
光束尺寸：光束長500mm×光束寬0.16mm Beam size: beam length 500mm × beam width 0.16mm
光束寬為最大能量強度96%以上的高強度區域內的平坦部 The flat portion of the high-intensity region where the beam width is 96% or more of the maximum energy intensity
掃描間距：40μm~8μm Scanning pitch: 40μm~8μm
照射脈衝能量密度：370mJ/cm2 Irradiation pulse energy density: 370 mJ/cm 2
通道長：20μm Channel length: 20μm
在上述脈衝雷射中，照射脈衝能量密度是在產生微晶的照射脈衝能量密度以下，從照射次數4次到照射次數8次被認為是結晶粒徑是逐漸成長，照射次數8次之後則結晶粒徑飽和。 In the above-described pulsed laser, the energy density of the irradiation pulse is below the energy density of the irradiation pulse of the crystallite, and it is considered that the crystal grain size is gradually grown from the number of times of irradiation to the number of times of irradiation 8 times, and the crystal is crystallized after 8 times of irradiation. The particle size is saturated.
對於以指定的照射次數以脈衝雷射照射的部位，藉由SEM照片來觀察，上述照片顯示於圖6。如圖6所示，在照射次數8次達到良好的結晶化，而即使在照射次數增加為12、16、20次的情況下，幾乎發現不到結晶粒徑的增加。 The photograph of the portion irradiated with a pulsed laser at the designated number of irradiations was observed by SEM photograph, and the above photograph is shown in Fig. 6. As shown in Fig. 6, good crystallization was achieved 8 times in the number of irradiations, and even when the number of irradiations was increased by 12, 16, or 20 times, an increase in crystal grain size was hardly observed.
圖7是表示結晶粒徑對應於照射次數的變化圖，在照射次數到達8次前，結晶粒徑對應於照射次數的增加而增大。在照射次 數8次以後則沒有發現結晶粒徑的增大。 Fig. 7 is a graph showing changes in crystal grain size corresponding to the number of irradiations, and the crystal grain size increases in accordance with an increase in the number of irradiations before the number of times of irradiation reaches eight times. In the irradiation No increase in crystal grain size was observed after 8 times.
從而，照射次數8次以上的任意照射次數，即是能夠由脈衝間的移動量而決定，在9次的照射次數中移動量是小於通道長，在第17次的照射次數中，移動量是小於通道長/2。 Therefore, the number of times of irradiation of eight or more irradiations can be determined by the amount of movement between pulses, and the amount of movement is smaller than the channel length in the number of irradiations of nine times, and the amount of movement is the number of irradiations in the seventeenth irradiation. Less than channel length / 2.
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2‧‧‧非單結晶半導體膜 2‧‧‧Non-single crystalline semiconductor film
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