CN100481159C - Semiconductor device and display device - Google Patents

Semiconductor device and display device Download PDF

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Publication number
CN100481159C
CN100481159C CNB2005100701318A CN200510070131A CN100481159C CN 100481159 C CN100481159 C CN 100481159C CN B2005100701318 A CNB2005100701318 A CN B2005100701318A CN 200510070131 A CN200510070131 A CN 200510070131A CN 100481159 C CN100481159 C CN 100481159C
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tft
thin film
film transistor
mentioned
organic
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CN1700266A (en
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安斋胜矢
古宫直明
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Sanyo Electric Co Ltd
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Sanyo Electric Co Ltd
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  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
  • Control Of El Displays (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

The objective is to reduce variation of a current to be supplied to a plurality of organic EL elements. An element drive TFT 20 for controlling a current value to be supplied from a power supply line VL is provided between an organic EL element 50 and a power supply line VL, and the channel length direction of the TFT 20 is arranged in parallel with the lengthwise direction of a pixel, or with the extending direction of a data line for supplying a data signal to a switching TFT for controlling the TFT 20, or the scanning direction of laser annealing for polycrystallizing the active layer 16 of the TFT 20. Furthermore, a compensating TFT 30 of an inverse TFT 20 having inverse characteristics may be provided between the power supply line VL and the TFT 20.

Description

Semiconductor devices and display device
The application be that September 29 calendar year 2001, application number are 01138517.0 the applying date, denomination of invention divides an application for the application for a patent for invention of " semiconductor devices and display device ".
Invention field
The present invention relates to el display, particularly the transistor of the circuit of formation pixel portion wherein.
Background technology
The EL display device that electroluminescence (hereinafter referred to as the EL) element of self-emission device is used as light-emitting component in each pixel is an emissive type, meanwhile, it has advantages such as the thin and power consumption of device volume is little, the display device of display device such as liquid crystal indicator (LCD) or CRT as an alternative, it attracts much attention, and is studying.
In addition, wherein as high-precision display device wait in expectation the on-off element of thin film transistor (TFT) (TFT) that independent control EL element is set in each pixel etc., in the active matrix EL display device of each pixel control EL element.
Fig. 1 illustrates the circuit structure of each pixel in the capable n row of the m active matrix EL display device.In the EL display device, many gate lines G L extend along line direction on substrate, and many data line DL and power lead VL extend along column direction. and each pixel possesses organic EL 50 in addition, switch drives with TFT (2TFT) 20 and auxiliary capacitor Cs with TFT (1TFT) 10, EL element.The 1st TFT10 makes gate lines G L be connected with data line DL, accepts signal (selection signal) and conducting on gate electrode.At this moment the data-signal that supplies on the data line DL is kept by the auxiliary capacitor Cs that is connected between the 1st TFT10 and the 2nd TFT20.On the gate electrode of the 2nd TFT20, supply with and the corresponding voltage of supplying with through above-mentioned the 1st TFT10 of data-signal the electric current that the 2nd TFT20 supplies with corresponding to its magnitude of voltage to organic EL 50 from power lead VL.By such work, make organic EL luminous in each pixel with brightness corresponding to data-signal, show desirable image.
Here, organic EL is by to being arranged on the element that organic luminous layer supplying electric current between negative electrode and the anode carries out luminous current drive-type.On the other hand, the data-signal that outputs to data line DL is the voltage signal corresponding to the amplitude of video data.Therefore, in organic EL display, purpose was to use such data-signal to make organic EL correctly luminous, and the 1st TFT10 and the 2nd TFT20 are being set in each pixel in the past.
In above-mentioned organic EL display, its display quality, reliability are very inabundant, need to eliminate the 1st and the 2nd TFT10, each characteristic dispersiveness of 20.Particularly, will directly produce dispersion owing to control to the characteristic dispersiveness of the 2nd TFT of the magnitude of current of organic EL 50 supplies, so requirement reduces its dispersiveness at luminosity from power lead VL.
In addition, preferably fast by operating rate, multi-crystal TFT that can low voltage drive constitutes these the 1st and the 2nd TFT10,20.In order to obtain polysilicon, by LASER HEAT TREATMENT the amorphous silicon polycrystallization is carried out, and because the energy dispersiveness in the shadow surface of irradiating laser device causes that the particle size of polysilicon is inhomogeneous.If had near the dispersion (if particularly the TFT raceway groove, causing dispersion) that causes this particle size the conducting current characteristics of TFT etc. also with the problem of disperseing.
Summary of the invention
The present invention produces in view of above problem, and purpose is to provide the characteristic dispersiveness by the TFT that relaxes the control organic EL, can make each light emitting pixel with the luminous active matrix organic EL panel of uniform brightness.
In addition, another object of the present invention is to seek the raising of its reliability or characteristic in the device that possesses organic EL etc. as driven element.
To achieve the above object, the invention provides a kind of semiconductor devices, it is characterized in that having: receive the switch thin film transistor (TFT) that signal is carried out work, input data signal at grid; Be arranged on driving power and become between the electroluminescent cell of driven element, control the element drives thin film transistor (TFT) that supplies to the electric energy of above-mentioned driven element from above-mentioned driving power according to the data-signal of supplying with thin film transistor (TFT) from above-mentioned switch, and then, drive with between the thin film transistor (TFT) at above-mentioned driving power and said elements, be provided with said elements and drive the compensation thin film transistor (TFT) of using thin film transistor (TFT) opposite conduction characteristic, above-mentioned compensation connects with diode between the thin film transistor (TFT) at above-mentioned driving power and said elements driving with thin film transistor (TFT).
Owing to can use the compensation thin film transistor (TFT) of such opposite conduction characteristic, with element drives with the mutual dispersiveness that moves of absorption characteristic of thin film transistor (TFT), therefore as totally relaxing each transistorized dispersiveness, can prevent because the luminosity dispersiveness in the electroluminescent cell that the characteristic dispersiveness causes.
Other form of the present invention in addition is that above-mentioned compensation is connected to diode with thin film transistor (TFT) between above-mentioned driving power and said elements drive with thin film transistor (TFT).
Thus, need not supply with special control signal with thin film transistor (TFT), can drive the characteristic dispersiveness of using thin film transistor (TFT) by compensating element, for compensation.
Other form of the present invention is that in above-mentioned display device said elements drives and constitutes with a plurality of thin film transistor (TFT)s of thin film transistor (TFT) by connection parallel with one another.
Another form of the present invention is that said elements drives with thin film transistor (TFT) by constituting at a plurality of thin film transistor (TFT)s that are connected parallel with one another between above-mentioned driving power and the above-mentioned electroluminescent cell, and above-mentioned compensation is separately positioned between the above-mentioned a plurality of thin film transistor (TFT)s and above-mentioned driving power that are connected in parallel with thin film transistor (TFT).
Like this, by being set up in parallel a plurality of element drives thin film transistor (TFT)s, even in each transistor the occurrence features dispersiveness, also can relax influence for the overall characteristic of parallel connected transistors.Therefore, can reduce dispersiveness and supplying electric current for EL element.And then, if also be taken as a plurality ofly with thin film transistor (TFT), then can reduce of the influence of the dispersiveness of each transistor characteristic for the pixel transistor overall characteristic for compensation, can make EL element easily luminous with uniform luminance.
In other form of the present invention, above-mentioned semiconductor device can be used in the display device of active array type, wherein, each pixel of the rectangular ground in this active matrix type display configuration possesses above-mentioned switch and drives with thin film transistor (TFT), above-mentioned compensation with thin film transistor (TFT) with as the above-mentioned driven element of display element with thin film transistor (TFT), said elements.
In other form of the present invention, in above-mentioned semiconductor device, said elements drives with thin film transistor (TFT) and the above-mentioned compensation orientation with thin film transistor (TFT) and is configured to along the bearing of trend of supplying with the data line of above-mentioned data-signal to above-mentioned switch with thin film transistor (TFT).
Other form of the present invention is that each of a plurality of pixels of rectangular ground configuration possesses driven element at least and the electric energy from driving power supplied to the display device of the element drives of driven element with the active array type of thin film transistor (TFT), side in the row of the matrix of each pixel region of above-mentioned a plurality of pixels and the limit of column direction is longer than the opposing party, the said elements driving long side direction configuration of the orientation of thin film transistor (TFT) along above-mentioned pixel region.
In the display device of other form of the present invention, the limit of the matrix column direction of above-mentioned pixel region is than the length of line direction, and the orientation that said elements drives with thin film transistor (TFT) disposes along above-mentioned column direction.
In the semiconductor devices of other form of the present invention, possess the Data Control said elements that at least one element drives that supplies to pairing driven element from the drive current of power lead is supplied with thin film transistor (TFT) with when selecting and drive switch thin film transistor (TFT) with thin film transistor (TFT), the said elements driving is configured to along the bearing of trend of supplying with the data line of above-mentioned data-signal to above-mentioned switch with thin film transistor (TFT) with the orientation of thin film transistor (TFT).
By adopting above configuration, can extend and use the channel length of thin film transistor (TFT) to the element drives of driven element supply of electrical energy, can improve transistorized reliabilities such as withstand voltage. in addition, can be the characteristic equalization of the element drives that is provided with respectively for driven element with thin film transistor (TFT), even under driven element is situation according to different light-emitting component of supply of electrical energy luminosity etc., the dispersiveness that also can suppress the luminosity of each element. in addition, for example can be easily in parallel or be connected in series with thin film transistor (TFT) for a plurality of element drives that possessed abundant channel length respectively of a driven element, being configured effectively in pixel etc., is can also increase the luminous zone under the situation of light-emitting component etc. at driven element.
In the semiconductor devices or display device of other form of the present invention, form the element drives thin film transistor (TFT), the said elements driving is with the orientation of the thin film transistor (TFT) direction of scanning along the linear pulse laser device that is used for this transistorized channel region is heat-treated.
By making the Laser Heat Treating in China direction of scanning consistent with the orientation of thin film transistor (TFT), can reduce reliably and difference from the transistor characteristic of thin film transistor (TFT) to the element drives of other driven element supply of electrical energy that use like this with element drives.
In LASER HEAT TREATMENT, have the dispersiveness of laser instrument output energy. in this dispersiveness, exist in the irradiation area of pulsed laser dispersion and luminous between dispersiveness.On the other hand, the element drives that for example adopts in the semiconductor devices of active matrix type display etc. is designed to mostly with thin film transistor (TFT): with respect to channel width, its channel length is very long.In addition, pass through the long limit configuration along pixel region as described above, perhaps the bearing of trend along column direction or data line forms the element drives thin film transistor (TFT), can drive the channel length of using thin film transistor (TFT) by easily abundant elongated member.And, can easily adjust, make that the direction of scanning and the element drives of laser instrument are unanimous on the whole with the orientation of thin film transistor (TFT), perhaps in other words, stride across raceway groove by the length direction of the irradiated region of laser instrument is set to become with its Width, make that an element drives can not be by single luminous heat-treating with the whole zone of the raceway groove of thin film transistor (TFT).Be set at also longlyer if this point for example drives channel length with thin film transistor (TFT) to said elements, then can easily realize than a moving interval of pulsed laser.Thus, on same substrate, form a plurality of driven elements, forming a plurality of element drives to this element difference supply of electrical energy uses under the situation of thin film transistor (TFT), the active layer of this thin film transistor (TFT) can be by the luminous LASER HEAT TREATMENT of carrying out repeatedly, energy dispersiveness between luminous is joined in each transistor equably, can be reliably the characteristic equalization of each thin film transistor (TFT). thus, for example in organic EL display of the organic EL that has used the organic compound in luminescent layer as driving element etc., can extremely reduce to be arranged on the dispersiveness of the light emission luminance in each pixel.
In other form of the present invention, in above-mentioned semiconductor device, said elements drives with the orientation of thin film transistor (TFT) and above-mentioned switch inconsistent with the orientation of thin film transistor (TFT).
Switch be configured in thin film transistor (TFT) select that this transistorized selection wire and the data line of supplying with data-signal intersect near and under a lot of situation of quantity, be arranged such that the bearing of trend of selection wire and the orientation almost parallel that switch is used thin film transistor (TFT). under these circumstances, by the orientation of element drives with thin film transistor (TFT) is configured on the direction different with switch usefulness thin film transistor (TFT), easily elongated member drives the channel length with thin film transistor (TFT).
In the semiconductor devices of other form of the present invention, carrying out the driven element of work according to supply of electrical energy and be used for having n (n is the integer more than the 2) thin film transistor (TFT) that is used to control to the supply of electrical energy of above-mentioned driven element between the power lead of above-mentioned driven element supply of electrical energy, this n thin film transistor (TFT) is electrically connected with the corresponding above-mentioned driven element contact by the following quantity of n-1.
According to supplying with reliability to the electric energy of driven element or preventing the viewpoint of dispersiveness etc., a plurality of element drives to driven element supply of electrical energy thin film transistor (TFT) is set, effect will be very high.On the other hand, be that contact portion becomes non-light-emitting area mostly under the situation of light-emitting component etc. for example at driven element.Thereby, by the quantity to the contact of n thin film transistor (TFT) of driven element supply of electrical energy and driven element is taken as below the n-1, when seeking to improve, can guarantee the real work district (if light-emitting component then is the luminous zone) of driven element to greatest extent as the reliability of installing.
The semiconductor devices of other form of the present invention is carrying out the driven element of work and is being used between the power lead of above-mentioned driven element supply of electrical energy according to supply of electrical energy, possesses the thin film transistor (TFT) that is used to control to the supply of electrical energy of above-mentioned driven element, this thin film transistor (TFT) is electrically connected by wiring layer mutually with corresponding above-mentioned driven element, separates this wiring layer of configuration and the connecting point position of thin film transistor (TFT) and the connecting point position of this wiring layer and above-mentioned driven element.
The connecting point position by separating laying-out and wiring layer and this thin film transistor (TFT) like this and the connecting point position of this wiring layer and above-mentioned driven element can easily form the driven element that is formed at the wiring layer upper strata mostly on more smooth face.Separate thin film transistor (TFT) and wiring layer with insulation course, carry out in the contact hole of these contacts in being formed at insulation course.In addition, wiring layer carries out with the contact hole that is connected through being formed on both insulation courses of insulation of driven element.Thereby, if the contact hole of the contact hole of connection thin film transistor (TFT) and wiring layer and connecting wiring layer and driven element is formed on position overlapped, the driven element that then is formed at the superiors is formed on the very big male and fomale(M﹠F) that is produced by 2 (2 sections) contact holes.As driven element, under the situation that has adopted the organic EL that for example in luminescent layer, has used organic compound, if it is poor to include its flatness that forms face of layer of organic compounds, then produce electric field and concentrate, be easy to from its position to produce can not be luminous dim spot etc.Thereby,, the flatness in the formation district of driven element is improved by the contact portion of the contact of wiring layer and driven element from thin film transistor (TFT) and wiring layer separated.
In the semiconductor devices of other form of the present invention, it is characterized in that, above-mentioned driven element is the light-emitting component that possesses light emitting element layer between the 1st and the 2nd electrode, in the insulation course on the upper strata that is formed at above-mentioned wiring layer, formed contact hole, in this contact hole, above-mentioned the 1st electrode of the above-mentioned light-emitting component that above-mentioned wiring layer forms with cover above-mentioned contact hole on above-mentioned insulation course is connected, at least the contact porose area of above-mentioned the 1st electrode is covered by planarization layer, has formed above-mentioned light emitting element layer on above-mentioned the 1st electrode and above-mentioned planarization layer.
The contact porose area of the 1st electrode is covered by planarization layer, that is, by imbedding with planarization layer because the calixconcavity part that the existence of contact hole causes can constitute the very high face of flatness in the 1st electrode and planarization layer.Thus, by on the high face of this flatness, forming the reliability that light emitting element layer can improve element.
The semiconductor devices of other form of the present invention is carrying out work and at the driven element that has light emitting element layer between the 1st and the 2nd electrode and between the power lead that above-mentioned driven element supply of electrical energy is used according to supply of electrical energy, possesses the thin film transistor (TFT) that is used to control to the supply of electrical energy of above-mentioned driven element, in this thin film transistor (TFT) and the contact hole that corresponding above-mentioned driven element forms on the insulation course that the interlayer of above-mentioned thin film transistor (TFT) that is formed at lower floor and above-mentioned driven element is separated, be electrically connected mutually directly or indirectly, at least the contact porose area of above-mentioned the 1st electrode is covered by planarization layer, has formed above-mentioned light emitting element layer on the upper strata of above-mentioned the 1st electrode and above-mentioned planarization layer.
Above the 1st electrode, form light emitting element layer, and owing to cover on the 1st electrode calixconcavity that the existence because of contact hole produces with planarization layer, even therefore this calixconcavity is very dark, also can enough the 1st electrodes and planarization layer constitute the very high face of flatness, by on the high face of this flatness, forming the reliability that light emitting element layer can improve element.
Other form of the present invention is that above-mentioned driven element is the organic electroluminescent device that has used organic compound in luminescent layer.In such organic EL, though be high brightness, and the range of choice of glow color, material is extensive, but owing to the dispersiveness that is current drives so supplying electric current amount will exert an influence for the dispersiveness of luminosity, but, can keep the magnitude of current of supply easily equably by adopting the circuit structure or the configuration of pixel as described above.In addition, by configuration, the structure that adopts contact as described above, can the enlarged opening rate, and then on smooth face, form element layer such as luminescent layer, can obtain the high element of reliability.
Description of drawings
Fig. 1 illustrates the circuit structure of a pixel of active matrix organic EL display device.
Fig. 2 illustrates the circuit structure example of each pixel of the active matrix organic EL display device of the embodiment of the invention 1.
Fig. 3 illustrates the I-V characteristic of TFT.
Fig. 4 illustrates the effect that is realized by the present invention and traditional circuit structure.
Fig. 5 illustrates other circuit structure of each pixel of the active matrix organic EL display device of the embodiment of the invention 1.
Fig. 6 illustrates another circuit structure of each pixel of the active matrix organic EL display device of the embodiment of the invention 1.
Fig. 7 illustrates another circuit structure of each pixel of the active matrix organic EL display device of the embodiment of the invention 1.
Fig. 8 is the plane structure chart of active matrix organic EL panel that has possessed the present embodiment 1 of circuit structure shown in Figure 7.
Fig. 9 illustrates A-A, B-B along Fig. 8 and the cross-section structure of C-C line.
Figure 10 is the planimetric map and the sectional view of each pixel of the active matrix organic EL panel of embodiment 2.
Figure 11 is other planar structure example of each pixel of the active matrix organic EL panel of embodiment 2.
Figure 12 is the planimetric map of each pixel of the active matrix organic EL panel of embodiment 3.
Figure 13 is other planar structure example of each pixel of the active matrix organic EL panel of embodiment 3.
Figure 14 is other planar structure example of each pixel of the active matrix organic EL panel of embodiment 2.
Figure 15 illustrates the active layer 16 of 2TFT and the section and the planar configuration of the anode 52 contact portions of organic EL 50.
Figure 16 illustrates the section and the planar configuration example of active layer 16 and the contact portion of the anode 52 of organic EL 50 of the 2TFT of embodiment 3.
Figure 17 illustrates other profile construction example of active layer 16 and the contact portion of the anode 52 of organic EL 50 of the 2TFT of embodiment 3.
Figure 18 illustrates other profile construction example of active layer 16 and the contact portion of the anode 52 of organic EL 50 of the 2TFT of embodiment 3.
Figure 19 illustrates other profile construction example of active layer 16 and the contact portion of the anode 52 of organic EL 50 of the 2TFT of embodiment 3.
Figure 20 illustrates other profile construction example of active layer 16 and the contact portion of the anode 52 of organic EL 50 of the 2TFT of embodiment 3.
Embodiment
Below, use description of drawings most preferred embodiment of the present invention (hereinafter referred to as embodiment).
Embodiment 1
Fig. 2 illustrates the circuit structure of each pixel in the capable n row of the m active matrix EL display device of the embodiment of the invention 1.As shown in the figure, each pixel possesses organic EL 50, switch TFT (the 1st TFT) 10, element drives TFT (the 2nd TFT) 20 and auxiliary capacitor Cs, here, be formed in by the gate lines G L that extends along line direction with in the data line DL area surrounded of column direction extension.In the present embodiment, also between power lead VL and the 2nd TFT20, insert the conductive characteristic compensation TFT30 opposite with the 2nd TFT20.This compensation is connected with a side of source electrode or drain electrode with grid of TFT30, is connected to diode, and this diode is connected with forward between power lead VL and the 2nd TFT20.Thus, can not supply with special control signal and carry out work.
The 1st TFT10 accepts signal and conducting at its grid, thus, keeps supplying to the data-signal of data line DL by being connected auxiliary capacitor Cs between 1TFT10 and the 2nd TFT20, and the electrode potential of auxiliary capacitor Cs equals this data-signal.The 2nd TFT20 is arranged between power lead VL and the organic EL (anode of element) 50, carries out work and makes from power lead VL to the electric current of organic EL 50 supplies corresponding to the magnitude of voltage of the data-signal that joins its grid.In example shown in Figure 2, in the 1st TFT10, use can high-speed response nch-TFT, in the 2nd TFT20, use pch-TFT.
In compensation with the nch-TFT that uses among the TFT30 with the 2nd TFT20 reversed polarity, at the I of 2TFT20 (electric current)-V (voltage) flutter the time, its I-V characteristic compensates the flutter of the 2nd TFT20 just along change in the other direction.
Fig. 3 is illustrated in the nch-TFT that used polysilicon in the active layer and the I-V characteristic of pch-TFT.If nch-TFT to the adding voltage of its grid become predetermined positive voltage (+Vt) more than then current value rise sharp, (Vth) rise sharp if the opposing party's pch-TFT becomes predetermined negative voltage to the adding voltage of its grid with next current value.Here, for example nch-TFT that forms on same substrate and pch-TFT, promptly move right in Fig. 3 when changing like that to the direction that strengthens at threshold value+Vth of nch-TFT, and threshold value-Vth of pch-TFT is then to the right side of Fig. 3 mobile phase degree together.Otherwise, when threshold value+Vth of nch-TFT is moved to the left, threshold value-Vth of pch-TFT also is moved to the left. for example, according to dispersiveness of creating conditions etc., the pch-TFT that in the 2nd TFT20 of Fig. 2, uses-when Vth is offset,, reduce the magnitude of current that supplies in the organic EL 50 immediately to the right if in the past then under identical conditions. still, in the present embodiment, will increase the magnitude of current that the compensation that is made of the nch-TFT that is arranged between the 2nd TFT20 and the power lead VL is flow through with TFT30.
In the present embodiment, as shown in Figure 2, because the 2nd TFT20 that becomes reversed polarity mutually is arranged between power lead VL and the organic EL 50 with TFT30 with compensation, the therefore magnitude of current crossed of 2 common mutual flow compensated of TFT and balance.Certainly, in the circuit structure of present embodiment, compare with the such circuit structure in the past of Fig. 1 of TFT30, can reduce to the lowest high-current value that organic EL 50 is supplied with and the suitable part of existence of compensation with TFT30 with there not being compensation.But since people's eyes the identification sensitivity of high brightness one side with compare very lowly in the sensitivity of intermediate luminance, therefore, aspect display quality, also exert an influence hardly even how much reduce maximum supplying electric current value.Its on the other hand because in each pixel, the 2nd TFT20 and compensation are mutually adjusted the electric current of outflow with TFT30, therefore can reduce the dispersiveness of the supplying electric current amount of the organic EL 50 between pixel.
Secondly, the effect that realizes according to the circuit structure of present embodiment with reference to Fig. 4 explanation.When the first half of Fig. 4 illustrates and makes organic EL luminous by present embodiment image element circuit structure shown in Figure 2, an example that concerns between adding voltage (data-signal) when the latter half of Fig. 4 illustrates and makes organic EL luminous by image element circuit structure in the past shown in Figure 1 and luminosity.The setting of Fig. 4 exemplify out with add voltage (data-signal) when being 8V as the high-high brightness that requires for organic EL, and between 8V～10V, carry out the situation that gray scale shows. in addition, the first half of Fig. 4, each 3 sampling of the latter half are when difference is created conditions the organic EL panel of the circuit structure that forms Fig. 2 and Fig. 1 down respectively, the luminosity characteristic when promptly deliberately making the characteristic of TFT of pixel portions dispersed.
Known to from Fig. 4, in circuit structure in the past, in 3 different sampling of the characteristic of pixel portions TFT, great changes will take place for light characteristic in the voltage data signal scope 8V～10V that sets, and it is different therewith, in the circuit structure of present embodiment, only be visual sense feeling less than high luminance area in the characteristic difference, the light characteristic difference in the medium tone district of 3 sampling is very little.Thereby, by each pixel being made the such circuit structure of present embodiment, even TFT, particularly bring the EL element of very big influence to drive to disperse with the characteristic of TFT20, but owing to there is the compensation TFT30 of reversed polarity therewith, therefore its dispersiveness can be compensated, the dispersiveness of light emission luminance can be suppressed.
Fig. 5 illustrates other example of the circuit structure of present embodiment. and be with above-mentioned Fig. 2 dissimilarity, use nch-TFT to constitute the 2nd TFT22, in addition, at the pch-TFT of compensation with use diode connection among the TFT32.Even utilize such structure also can enough compensation to compensate characteristic dispersiveness among the 2nd TFT22 with TFT32.
Fig. 6 illustrates another example of the circuit structure of present embodiment.And the circuit structure dissimilarity of Fig. 2 is a plurality of 2TFT arranged side by side and is arranged on compensation with between TFT30 and the organic EL 50.In addition, the polarity of TFT is identical with Fig. 2, and 2TFT24 is pch, and compensation is nch with TFT30.Common the 1st electrode one side that connects the 1st TFT10 and auxiliary capacitor Cs of the grid of 2 2TFT24, each source electrode connects compensation TFT30, and drain electrode connects organic EL 50.By being set up in parallel the 2nd TFT24, can further reduce like this because the supplying electric current dispersiveness that the characteristic dispersiveness of 2TFT causes to organic EL.
Here, if 2 the 2nd each current value targets that flow through of TFT24 are made as i, then certain, the total target current value of 2 the 2nd TFT24 becomes 2i.According to dispersiveness, even for example the current supply ability of a side the 2nd TFT24 becomes i/2, the opposing party's the 2nd TFT24 flows through electric current with i, for target 2i, can supply with (3/2) i to organic EL.The example of Fig. 6 in addition, becomes 0, if then can pass through the opposing party's TFT to organic EL supplying electric current i even differ from the current supply ability of a side TFT most.Be made of under the situation of 2TFT24 single TFT, if its current supply ability becomes 0, then its pixel produces defective, and in comparison, its effect is especially outstanding.
In addition, each TFT of present embodiment makes the a-Si polycrystallization by LASER HEAT TREATMENT, under the situation that is set up in parallel a plurality of 2TFT24, being easy to manage to stagger for the direction of scanning of laser, it forms position etc., so that laser does not shine the active area of each the 2nd TFT24 simultaneously. and, by such configuration, can reduce the possibility that the 2nd all TFT24 becomes defective extraordinarily, can be dispersed inhibition of the characteristic that produces owing to LASER HEAT TREATMENT Min..In addition, as described above, because compensation TFT30 is set between the 2nd TFT24 and power lead VL, even, also it can be relaxed with TFT30 by compensation therefore because the dispersiveness of its heat-treat condition etc. produces skew in the threshold value of the 2nd TFT24.
Fig. 7 illustrates another image element circuit structure of present embodiment. and be with the structure dissimilarity of above-mentioned Fig. 6, be not only the 2nd TFT24, compensation also is provided with a plurality of with TFT, and each compensation is separately positioned between power lead VL and the 2nd TFT24 with TFT34.If like that also be provided with a plurality ofly with TFT34 image pattern 7 for compensation, then, can reduce dispersiveness more reliably to the supplying electric current ability of organic EL 50 as the dispersiveness that totally can relax the current supply ability that in each compensates with TFT34, takes place.
Fig. 8 illustrates an example of the planar structure of the organic EL display that becomes the such circuit structure of above-mentioned Fig. 7. and Fig. 9 (a) illustrates along the summary section of the A-A line of Fig. 8 in addition, Fig. 9 (b) illustrates along the summary section of the B-B line of Fig. 8, Fig. 9 (c) illustrates along the summary section of the C-C line of Fig. 8. in addition, among Fig. 9, for the layer (film) that forms simultaneously, remove the different layer of function and mark identical symbol in addition basically.
As shown in Figure 8, between each pixel the 2nd TFT24, power lead VL of possessing the 1st TFT10, auxiliary capacitor Cs, 2 pch and the 2nd TFT24 diode be connected and 2 compensation of the nch that is provided with TFT34 and the organic EL 50 that is connected with the drain electrode of 2TFT (24).In addition, in the example of Fig. 8, (be not limited to this), pixel of configuration in by the gate lines G L that extends along line direction and power lead VL that extends along column direction and data line DL area surrounded.In addition, in the example of Fig. 8, in order to realize more high-precision colour display device, the pixel of R, G, B is arranged at the so-called δ that each row has adopted its allocation position to stagger, therefore data line DL and power lead VL are not the straight line shapes, but along column direction extend, each row run in the guide offset the gap of pixel in.
In each pixel region, near the cross part of gate lines G L and data line DL, formed the 1st TFT10.In active layer 6, the p-Si that use obtains the a-Si polycrystallization by LASER HEAT TREATMENT, this active layer 6 become 2 times and stride across from the figure of the outstanding gate electrode 2 of gate lines G L, in Fig. 7, structure with single gate illustrates, and becomes double gated architecture in circuit.Active layer 6 is formed on cover gate electrode 2 and on the gate insulating film 4 that forms, the district forms raceway groove directly over gate electrode 2, in its both sides, forms source area 6S, the drain region 6D of the impurity that mixed.Because wish to respond at high speed the selection signal to gate lines G L output, here, the 1st TFT10 is in source- drain area 6S, 6D, Doping Phosphorus impurity such as (P) constitutes nch-TFT.
The contact hole that the drain region 6D of the 1st TFT10 is used in interlayer dielectric 14 split sheds with cover the 1st TFT10 overall and on the interlayer dielectric 14 that forms formed data line DL be connected.
In the source area 6S of the 1st TFT10, connect auxiliary capacitor Cs.This auxiliary capacitor Cs is by at interlayer clamping grid dielectric film 4 and the 1st overlapping electrode 7 and the zone of the 2nd electrode 8 form.The 1st electrode (7) extends along the line direction identical with gate lines G L in Fig. 8, and with and the electric capacity line SL of grid same material formation form. in addition, the active layer 6 of the 2nd electrode 8 and the 1st TFT10 constitutes the formation position that this active layer 6 extends to the 1st electrode 7 integratedly.The 2nd electrode 8 is connected with the gate electrode 25 of the 2nd TFT24 through connector 42.
The 2TFT24 of 2 pch and the compensation of 2 nch become shown in Fig. 9 (b) with the cross-section structure of TFT34. and these 2TFT and compensation are utilized as each active layer with TFT24,34 handles along the direction of data line DL (power lead VL), the semiconductor layer 16 that carried out composition with island on each TFT.Thereby in this embodiment, these the 2nd TFT24 and compensation are configured to along data line DL with the orientation of the raceway groove of TFT34, are the length direction of a pixel of elongated shape here.In addition, this semiconductor layer 16 is that the active layer 6 with the 1st TFT10 forms simultaneously, has used the polysilicon that the a-Si polycrystallization is formed by LASER HEAT TREATMENT.
Be positioned at the compensation contact hole of the drain region process of TFT34 at Fig. 9 (b) two ends, connect identical power lead VL respectively at interlayer dielectric 14 split sheds.In addition, compensation with the channel region of TFT34 under clamping grid dielectric film 4 disposed gate electrode 35.This gate electrode 35 is the layers that form simultaneously with identical materials with gate lines G L, and in contact hole, VL is connected with power lead as shown in Figure 8.Thereby this compensation is such shown in the circuit diagram of Fig. 7 with TFT34, constitutes the diode that grid and drain electrode are connected power lead VL jointly.In addition, this compensation separates configuration with the source area of the source area of TFT34 and the 2nd TFT24 that is made of pcTFT, is connected to each other respectively by connecting wiring 43.
Each gate electrode 25 of the 2nd TFT24 is identical with the gate electrode 35 of TFT34 with compensation, it is the conductive layer that forms simultaneously with identical materials with gate lines G L, be connected on the 2nd electrode 8 of auxiliary capacitor Cs through connector 42, extend along power lead VL from the formation district of this auxiliary capacitor Cs, and then extend to the below of active layer 16, constitute each gate electrode 25 of 2 the 2nd TFT24.
Organic EL 50 for example possesses the such profile construction of Fig. 9 (c), and after having formed each above-mentioned TFT, more than having an even surface turns to purpose, be formed on formed planarization insulating layer 18 on the whole surface of substrate above.The stacked organic layer and constitute organic EL 50 between the negative electrode (metal electrode) 57 in the common formation of the superiors at anode (transparency electrode) 52 and each pixel.Here, this anode 52 directly is not connected with the source area of the 2nd TFT24, but connects through the connector 40 that constitutes wiring layer.
Here, in the present embodiment, as shown in Figure 8,2 the 2nd TFT24 are connecting a connector 40 jointly, and this connector 40 is connected with the 1st electrode 52 of organic EL 50 a position.That is, organic EL 50 usefulness n-1 following contacts are connected with n the 2nd TFT24.Contact areas also becomes non-light-emitting area sometimes, by reducing the number of connections of organic EL 50 and connector 40 (the 2nd TFT24) as far as possible, can strengthen the luminous zone as far as possible like this.In addition, other example of relevant this number of connections is narrated in the back as embodiment 3.
In addition, in the present embodiment, like that, the link position of connector 40 and anode 52 is configured to stagger with the link position of connector 40 and the 2nd TFT24 shown in Fig. 8 and Fig. 9 (c).There is local thin position etc. then is easy to cause that electric field concentrates if comprise the light emitting element layer 51 of organic compound described later, sometimes from having caused that the position that electric field is concentrated begins to worsen.Thereby wish to have used the formation face of light emitting element layer 51 of organic material smooth as far as possible.Upper strata at contact hole produces the calixconcavity that is caused by this contact hole, and dark more its calixconcavity of contact hole is big more.Thereby, beyond the formation district of anode 52,, can make the upper surface of the anode 52 that forms organic layer thereon smooth as far as possible by disposing connector 40 and the contact hole that the source area of the 2nd TFT24 is connected.In addition, about the smooth example of upper surface of anode 52 is narrated in the back as embodiment 4.
Light emitting element layer (organic layer) 51 be from anode one side, sequentially stacked for example the 1st hole transporting layer the 53, the 2nd hole transporting layer 54, organic luminous layer 55, electron supplying layer 56.As an example, the 1st hole transporting layer 52 comprises
MTDATA:4,4 ', 4 "-three (3-methyl phenyl phenyl amino) triphenylamine
The 2nd hole transporting layer 54 comprises
TPD:N, N '-diphenyl-N, N '-two (3-aminomethyl phenyl)-1,1 '-biphenyl-4,4 '-diamine
Organic luminous layer 55 is according to as the glow color of the purpose of R, G, B and difference for example comprises the BeBq2 that contains quinacridone (Quinacridone) derivant: two (10-hydroxy benzo [h] quinoline) beryllium,
Electron supplying layer 56 is made of BeBq.In addition, in the example shown in Fig. 9 (c), in organic EL 50, each pixel jointly forms by the anode 52 of ITO formations such as (indium tin oxides), the anode 57 removing each organic layer (53,54,56) beyond the organic luminous layer 55 and be made of Al etc.
As other structure example of above-mentioned EL element, can enumerate the element that sequential cascade has formed the layer in the left side of using the material of enumerating on the right side.
A. transparency electrode (anode)
B. hole transporting layer: NBP
C. luminescent layer: red (R) ... at main material (Alq 3) the middle red adulterant (DCJTB) that mixes
Green (G) ... at main material (Alq 3) in the green adulterant (coumarin 6) that mixed
Blue (B) ... at main material (Alq 3) in mixed adulterant () blue
D. electron supplying layer: Alq3
E. electron injecting layer: lithium fluoride (LiF)
F. electrode (negative electrode): aluminium (Al)
In addition, here, the formal title of the material of recording and narrating with above-mentioned abbreviation is as follows.
" NBP " ... N, N '-Di ((naphthalene-1-y1)-N, N '-diphenyl-biphenylamine)
" Alq 3" ... three (oxine) aluminium
" DCJTB " ... (2-(1, the 1-dimethyl ethyl)-6-(2-(2,3,6,7-four hydrations-1,1,7,7-tetramethyl-1H, 5H-benzo [i, j] quinolizine-9-yl) vinyl)-4H-pyrans-4-base subunit) propane two is fine
" coumarin 6 " ... 3-(2-[4-morpholinodithio base)-7-(diethylamino) cumarin
" BAlq " ... (1, two (2-methyl-8-quinoline-NI, O8) aluminium of 1 '-diphenyl-4-Olato)
Certainly, be not to be defined in such structure.
In above such pixel of constructing, if on gate lines G L, bring Selection In signal, then 1TFT10 conducting, the current potential of data line DL equates with the current potential of the source area of the 2nd electrode 8 that has been connected auxiliary capacitor Cs.On the gate electrode 25 of the 2nd TFT24, supply with voltage corresponding to data-signal, the 2nd TFT24 according to its magnitude of voltage the anode 52 of the current supply of supplying with TFT34 through over-compensation from power lead VL to organic EL 50.According to such work, the electric current that can correctly supply with corresponding to data-signal to organic EL 50 in each pixel can not have dispersed demonstration.
As shown in Figure 8, because sequentially multi-series (being 2 series here) is being provided with compensation TFT34 and the 2nd TFT24 between power lead VL and organic EL 50, therefore even the characteristic deviation that caused by dispersiveness or defective etc. take place in a side series, because the existence of the opposing party's series of normal characteristic, can relax dispersiveness by the supplying electric current amount of the total decision of multi-series.
In addition, in planar configuration shown in Figure 8, the polysilicon layer that active layer has all used by the LASER HEAT TREATMENT polycrystallization, and this thermal treatment makes along the long laser beam of the line direction of figure as an example, carries out along column direction scanning.Under these circumstances, the raceway groove of the 1st TFT10 towards with the 2nd and compensation with TFT24, each active layer length of 34, raceway groove towards inconsistent, form the position in addition and in the 1st and the 2nd TFT10,24, separate.Therefore,, can prevent at the 1st and the 2nd TFT10,24 by LASER HEAT TREATMENT, so the 2nd and compensation produce undesirable situation simultaneously in TFT24,34.
In addition, for the 1st TFT10, the 2nd TFT24 and compensation are illustrated with each situation that is bottom grid is constructed of TFT34, and also can be the top grid structures that has formed gate electrode on the upper strata of active layer.
Embodiment 2
Next illustrates other embodiments of the invention 2.In embodiment 1, the dispersiveness for the luminosity between the pixel that prevents to cause owing to the transistor characteristic dispersiveness is provided with and the compensation thin film transistor (TFT) of element drives with thin film transistor (TFT) opposite conduction characteristic.Different therewith, in present embodiment 2, be conceived to element drives suppresses the luminosity between pixel with the configuration of thin film transistor (TFT) (2TFT) dispersiveness.Figure 10 illustrates the structure example of each pixel among the embodiment 2, and Figure 10 (a) is a general view, and Figure 10 (b) is the sectional view along the B-B line of Figure 10 (a).This structure illustrates with the same circuits structure with Fig. 1.In addition, on corresponding to the part of the figure that had illustrated, mark identical symbol among the figure.
In embodiment 2, a pixel possesses organic EL the 50, the 1st TFT (switch thin film transistor (TFT)) 10, auxiliary capacitor Cs, the 2nd TFT (element drives thin film transistor (TFT)) 20.Different with embodiment 1, between power lead VL and organic EL 50, formed the 2nd single TFT20, and the 2nd TFT20 is identical with above-mentioned Fig. 8, its orientation is configured to along the length direction of the pixel of elongated formation.And, in present embodiment 2, make the length direction of orientation by disposing 2TFT20 towards pixel region, make under the situation that as Figure 10 (a), disposes the 2nd very long TFT20 of channel length, perhaps need use under the situation of TFT30 at configuration the 2nd TFT20 between power lead VL and the organic EL 50 or compensation as shown in Figure 8 as above-mentioned, can both be in the luminous zone of guaranteeing organic E1 element 50 to greatest extent, in the limited pixel region of area, dispose needed TFT effectively.
In present embodiment 2, dispose the 2nd TFT20 by length direction along pixel, such shown in Figure 10 (a) and Figure 10 (b), the channel length of the 2nd TFT20 that can fully extend.By the channel length of abundant lengthening the 2nd TFT20, can improve the reliability that the withstand voltage raising owing to TFT produces.In addition, can carry out the equalization of the transistor characteristic of the 2nd TFT20, can reduce the current supply ability dispersiveness of the 2nd TFT20 of each pixel, can extremely reduce the luminosity dispersiveness of the organic EL 50 that causes by this ability dispersiveness.
In addition, identical with embodiment 1 in present embodiment 2, the 2nd TFT20 uses the polysilicon layer that amorphous silicon layer is obtained by the LASER HEAT TREATMENT polycrystallization as semiconductor layer (active layer) 16.In this case, the Laser Heat Treating in China direction of scanning is set at consistent with the orientation of the 2nd TFT20, in other words, the lengthwise edge of the irradiated region of pulsed laser is configured to stride across raceway groove 16c with Width, and as described above by the lengthening the 2nd TFT20 channel length, can reduce the characteristic dispersiveness of the 2nd TFT20. this is owing to can easily adjust by single laser radiation and to make the whole zone of raceway groove of the 2nd TFT20 not by thermal treatment, can prevent from the 2nd TFT20 of other pixel very big difference to take place on characteristic, the characteristic for 2TFT20 can access higher equalization effect thus.
The bigger electric current that requires the 2nd TFT20 to supply with from driving power (power lead VL) for organic EL 50, and in being applied in active layer 16, used under the situation of the 2nd TFT20 of p-Si-TFT of polysilicon, with requiring the compare mobilance of p-Si of ability is sufficient value, even the 2nd TFT20 is designed to the very long sufficient current supply ability of also can bringing into play to its channel length.In addition, therefore the 2nd TFT20 requires withstand voltage height mostly owing to directly connect power lead VL, requires channel length CL bigger than channel width.Thereby, from such viewpoint the 2nd TFT20 preferably also is to adopt fully long channel length, therefore by the 2nd TFT20 being formed the length direction of its orientation, can in a pixel region, dispose the 2nd TFT20 that possesses long raceway groove effectively along pixel region.
In the display device that the rectangular ground a plurality of pixels of configuration constitute on display surface, under most situation, require horizontal direction (line direction) than the higher resolution of vertical direction (column direction), thus each pixel to be designed to the tendency of microscler shape along column direction like that shown in above-mentioned Fig. 8 or Figure 10 (a) very strong.In this case, make orientation towards column direction if dispose the 2nd TFT20, then orientation can easily be guaranteed above-mentioned desired channel length along the length direction of pixel region.
In addition, such shown in present embodiment 2, in the active matrix type display that is provided for the on-off element of driving display element in each pixel, along the data line DL of column direction configuration, along line direction selection of configuration line (gate line) GL to the 1st TFT10 supply data-signal.Therefore, make orientation along the direction (column direction) that data line DL extends, guarantee long channel length easily, simultaneously the 2nd TFT20 is configured in the pixel region expeditiously by disposing the 2nd TFT20.In addition, in the example of Figure 10, adopted from driving power Pvdd and passed through the design of power lead VL to each pixel supply of electrical energy, because also identical with data line DL along the column direction extension, therefore the orientation of the 2nd TFT20 is also consistent with the bearing of trend of this power lead VL for this power lead VL.
And in present embodiment 2, as described above, the orientation setting of the 2nd TFT20 becomes consistent with the Laser Heat Treating in China direction of scanning or is parallel with column direction (bearing of trend of data line DL), and it is consistent with the line direction of the extension of gate lines G L to be configured to its orientation for the 1st TFT10. thus, in present embodiment 2, in the 1st TFT10 and the 2nd TFT20, its orientation becomes different configuration mutually.
Secondly, the profile construction of the display device of present embodiment 2 is described with reference to Figure 10 (b).Figure 10 (b) illustrates the 2nd TFT20 and the profile construction of the organic EL 50 that is connected with this TFT20.For the 1st not shown TFT10, if except that the conductivity type of the length of dechannelling, bigrid and active layer 6 is not equal, its basic structure almost 2TFT20 with Figure 10 (b) is identical in addition.
In embodiment 1 the illustrative the 1st and 2TFT all be bottom grid structure, and in present embodiment 2, the 1st and the 2nd TFT10,20 adopts gate electrodes to be formed on the top grid structure on the upper strata of active layer.Certainly, being not limited to top electric grid structure, also can be the bottom grid structure.
The active layer 16 of the 2nd TFT20 and the active layer 6 of the 1st TFT10 all are by the resulting polysilicon of polycrystallization constitutes by the amorphous silicon layer that forms on substrate 1 is carried out LASER HEAT TREATMENT as described above.At the active layer 6 that constitutes by polysilicon and formed gate insulating film 4 above the active layer 16.Each gate electrode 2 and 25 of the 1st TFT10 and the 2nd TFT20 be formed on this gate insulating film 4 above, gate electrode 25 to the 2nd TFT20 carries out composition, make it to connect the 2nd electrode 8 with the auxiliary capacitor Cs of active layer 6 one of the 1st TFT10, shown in Figure 10 (a), from extending along column direction with the coupling part of auxiliary capacitor Cs, cover on a large scale on the gate insulating film 4 active layer 16 above.
The zone active layer 16 of the 2nd TFT20, that cover its top by gate electrode 25 is channel region 16c, forms source area 16s and drain region 16d respectively in the both sides of this channel region 16c.In present embodiment 2, the source area 16s of this active layer 16 is near auxiliary capacitor Cs, and the contact hole that forms by perforation gate insulating film 4 and interlayer dielectric 14 is electrically connected with power lead VL.In addition, drain region 16d is near the gate lines G L that is equivalent to the matrix next line, and the contact hole that forms by perforation gate insulating film 4 and interlayer dielectric 14 is connected with connector (wiring layer) 40.Connector 40 begins to extend to the formation district of organic EL 50 from the bonding pad with drain region 16d, be electrically connected with the ITO electrode (anode) 52 of organic EL 50 through the contact hole that is formed on the 1st planarization insulating layer 18 that covers above-mentioned interlayer dielectric 14 and power lead VL and connector 40 and form.
In addition, in Figure 10 (b), on above-mentioned planarization layer 18,, form the formation district of edge, wiring layer district and the 1st and the 2nd TFT that the 2nd planarization insulating layer 61 makes it to cover anode 52 only at the formation central area opening of the anode 52 of organic EL 50.And the light emitting element layer 51 of organic EL 50 is formed on anode 52 and the 2nd planarization insulating layer 61.Also have and on light emitting element layer 51, form the shared metal electrode 57. of all pixels
Secondly, the relation of the moving interval P of the channel length CL of the 2nd TFT20 and laser instrument is described. as described above, channel length CL about 2 TFT20, preferably fully long, and can not be the whole regional thermal treatment of raceway groove with 1 time pulse laser, so the moving interval P of laser instrument preferably becomes P＜C for channel length CL.Sometimes the setting of moving interval P optical system by laser heat treatment equipment etc. can be adjusted, and under these circumstances, preferably the handle assembly adjustment becomes CL〉P.For example under the display device situation of the resolution about 200dpi,, can guarantee that also column direction is about 80 μ m even about the length of pixel row direction 30 μ m.And then, be under the situation of 20 μ m～35 μ m at the moving interval P of laser instrument, make its orientation towards the length in pixels direction by disposing 2TFT20, can guarantee that channel length CL is about 50 μ m～80 μ m, can satisfy above-mentioned relation.If such relation then the channel region 16c one of 2TFT20 shine multiple pulses laser surely and carry out polycrystallization, and between the 2nd TFT20 of same other pixel by multiple pulses laser radiation polycrystallization, can reduce the difference of its characteristic.
In the above description, in a pixel, between organic EL 50 and power lead VL, formed the 2nd single TFT20.But also can in a pixel region, a plurality of 2TFT20 be set.Figure 11 is illustrated in design one example of a plurality of the 2nd TFT20 that are connected in parallel between inherent power lead 16 of a pixel and the organic EL 50.In addition, the equivalent electrical circuit of dot structure shown in Figure 11 is with to remove compensation in the circuit of above-mentioned Fig. 6 equal with the situation beyond the TFT30, source area 16sa, the 16sb of 2 the 2nd TFT20 is connected on the power lead VL, and drain region 16da, 16db connect the anode 52 of organic EL 50 respectively through contact 40.Like this, by a plurality of the 2nd TFT20 are set in a pixel region, for a pixel can the both sides of a plurality of the 2nd TFT20 become simultaneously bad, can not at least also can will be reduced to below half to the probability of organic EL supplying electric current.
For 2 the 2nd TFT20a, the configuration of 20d, identical with Figure 10, it is almost parallel for the length direction (bearing of trend of data line DL is also consistent here) of pixel region to be configured to its orientation.According to such configuration, can guarantee each channel length CL as far as possible longways when guaranteeing the luminous zone to greatest extent.And then, about the Laser Heat Treating in China direction of scanning, in Figure 11, also be set at parallel with each the orientation of 2 the 2nd TFT20a, 20b.In addition, 2 active layer 16a, 16b arrange point-blank.Each active layer of a plurality of the 2nd TFT20a, 20b not necessarily must be mutually side by side point-blank, each channel region 16ca, 16cb by making the 2nd TFT20a, 20b has been offset somely for laser scanning direction is not quite identical mutually, can prevent more reliably that the characteristic of TFT20a, 20b from similarly disperseing.Promptly, because orientation and laser scanning direction depart from mutually, so can reduce the possibility of using same pulse simultaneously the raceway groove of 2 TFT to be heat-treated, the characteristic that can reduce 2TFT20a, 20b significantly fully similarly departs from setting value, the transistor that both sides are perhaps the taken place possibility of such problem of not working simultaneously can reduce the dispersiveness of the total electricity that the organic EL 50 in each pixel supplies with.
The channel length Cla of 2 the 2nd TFT20a, 20b, each of CLb wish that all the moving interval P than laser instrument is big as described above.And then, for the raceway groove 16ca of a plurality of the 2nd TFT20a, 20b and the spacing distance L of 16cb, preferably also the moving interval P than laser instrument is big.And in a pixel, disposed under the situation of a plurality of the 2nd TFT20 as shown in Figure 11, if the total channel length of at least 2 TFT20a, 20b is bigger than moving interval P with the total of above-mentioned spacing distance L, then can prevent to pass through LASER HEAT TREATMENT, produce undesirable situation simultaneously among a plurality of transistor T FT2a, the TFT2b in a pixel or characteristic is offset in the same manner, the effect of the characteristic dispersiveness in each pixel that can be reduced.
Embodiment 3
Secondly the higher method of attachment of efficient of the organic EL 50 of a plurality of the 2nd TFT20 and correspondence, as embodiment 3, is described in a pixel.As shown in Figure 11 of above-mentioned embodiment 1 and embodiment 2, in a pixel, a plurality of the 2nd TFT20 are set between organic EL 50 and power lead VL, improving reliability, viewpoint aspects such as raising characteristic suit.In a pixel, be provided with like this under the situation of a plurality of the 2nd TFT20, as shown in figure 11, by connecting the 2nd TFT20a, 20b and organic EL 50 respectively, from power lead VL through the 2nd
TFT20 is more reliable to the current supply of organic EL 50.But, the light that makes spontaneous photosphere 55 from transparent anode 52 such shown in Figure 10 (b) through the substrate 1 of below under the situation of the organic EL of outside outgoing type, contact portion is many by shading.For example, in Fig. 9 (c) or Figure 10 (b), organic EL 50 carried out with being connected through the wiring layer 40 as metal line of the 2nd TFT20, in the contact portion of this wiring layer 40 and anode 52, the wiring layer 40 that has light-proofness below anode 52, the light from luminescent layer 55 in this zone can not pass through substrate 1 one sides.Thereby, if setting and the 2TFT20 of the number n equal number of the 2nd TFT20 and the contact portion of organic EL 50 then reduce pro rata with light-emitting area and number of connections.
Therefore, for the minimizing that makes light-emitting area reaches minimum, the quantity n (n 〉=2) for the 2TFT20 of each pixel preferably is taken as the number of connections of the 2nd TFT20 and organic EL 50 below the n-1.At above-mentioned Fig. 8 or at following illustrated Figure 12, among Figure 13 and Figure 14, connect n the 2nd TFT20 and organic EL 50 with the number of connections below the n-1.In addition, among each illustrated afterwards figure, symbol that mark is identical on the part identical with the accompanying drawing that had illustrated and omission explanation.
Among Figure 12, be illustrated in when being connected in parallel 2 the 2nd TFT20a, 20b between power lead VL and the organic EL 50 and method of attachment organic EL 50.In addition, 2 2TFT20a, 20b are identical with above-mentioned Figure 11, it is parallel for the length direction (bearing of trend of data line DL) or the Laser Heat Treating in China direction of scanning of pixel to be configured to its orientation, and then be configured to stagger mutually, seek to reduce the brightness dispersiveness between the pixel, improve reliability.
In the example of Figure 12, by single island composition the semiconductor layer that constitutes of p-Si be used as active layer 16a, the 16b of 2 the 2nd TFT20a, 20b.Two ends one side of the column direction of this semiconductor figure is source area (under the situation of p-ch TFT) 16sa, the 16sb of each the 2nd TFT20a, 20b, is connected with power lead VL respectively.In addition, be drain region (under the p-ch TFT situation) 16da and the 16db of 2 TFT20a, 20b near the central authorities of semiconductor figure, be connected (with reference to Figure 10 (b)) with the single wiring layer 40 that is configured between 2 TFT in the common contact hole that forms connecting interlayer dielectric 14 and gate insulating film 4.
The anode that this wiring layer 40 extends to organic EL 50 forms the district, and is identical with the profile construction of Figure 10 (b), and the contact hole of the position of process after 18 upper sheds of the 1st planarization insulating layer is connected with the anode 52 of organic EL 50.Here, the link position of wiring layer 40 and anode 52 becomes in Figure 12 near the central authorities of length in pixels direction of anode 52.Connecting point position not only is not limited to shown in Figure 12, and by the picture as shown in Figure 12 be configured in anode 52 relatively approach central authorities near the position, if compare with metal electrode, then can obtain forming the equalization effect of the current density in the district, can improve the homogeneity of the luminosity of each pixel in light-emitting area by the anode 52 that high-resistance ITO etc. constitutes.
In example shown in Figure 13, the quantity of the 2nd TFT20 is taken as 3, this 3 TFT20-1,20-2 and 20-3 are connected in parallel between the anode 52 of power lead VL and organic EL 50.The active layer 16 of 3 the 2nd TFT20 is one, and orientation is set at the line direction in the figure.Separate by the figure opening active layer 16 mutually in its channel width dimension each channel region 16c1～3 of the 2nd TFT20-1～3.
These 3 the 2nd TFT20 here are connected a position with power lead VL, also be connected with the anode 52 of organic E1 element 50 by single wiring layer 40 in addition a position, 25 couples of 3 TFT of gate electrode are common, be electrically connected with the 2nd electrode 8 of auxiliary capacitor Cs, and by constituting near the metal line that extends along column direction the auxiliary capacitor Cs.In the structure example of Figure 13, these 3 the 2nd TFT20-1～3 are connected by a contact portion with organic EL 50, can reduce contact portion in the ratio that the formation Qu Zhongsuo of organic EL 50 occupies, can improve each aperture ratio of pixels, promptly improve light-emitting area.
In example shown in Figure 14, the quantity of the 2nd TFT20 is taken as 4, electric the going up in these 4 TFT20-1～4 is connected in parallel between the anode 52 of power lead VL and organic EL 50.The active layer 16 of 4 the 2nd TFT20 constitutes one, and the orientation of each TFT20-1～4 is identical with Figure 12 etc., is set at the length direction that is parallel to pixel region or the bearing of trend of data line DL, and 4 elements almost side by side point-blank.
4 the 2nd TFT20-1～4 here are connected 3 positions with power lead VL, by the 1st, the 2nd wiring layer 40-1 and 40-2, are connected with the anode 52 of organic EL 50 2 positions.In the structure example of Figure 14, each source area 16s1,16s4 of being positioned at single active layer 16 outermost TFT20-1,20-4 are connected with power lead VL separately respectively, and each the source area 16s2 and the 16s3 that are positioned at TFT20-2, the 20-3 of central authorities are connected to power lead VL jointly.The 2nd
TFT20-1 and 20-2 and organic EL 50 are connecting drain region 16d1 and 16d2 from the 1st wiring layer 40-1 that extends to element 50 between the 2nd TFT20-1 and the 20-2, the 1st wiring layer 40-1 extends to the formation district of organic EL 50, is connected with the anode 52 of element.In addition, the 2nd TFT20-3 and 20-4 and organic EL 50, connecting drain region 16d3 and 16d4 from the 2nd wiring layer 40-2 that extends to element 50 between the 2nd TFT20-3 and the 20-4, the 2nd wiring layer 40-2 extends to the formation district of organic EL 50, is connected with the anode 52 of element.Like this, 4 the 2nd TFT20-1～4 only are connected with organic EL 50 2 positions, suppress owing to the minimizing that the luminous zone that 4 the 2nd TFT20-1～4 cause is set.
In addition, in the structure of Figure 14, because 4 the 2nd TFT20-1～4 are configured to length direction along pixel almost point-blank towards orientation, therefore configuration the 2nd TFT20-1～4 in a pixel region effectively.
Embodiment 4
Secondly, with reference to Figure 15～Figure 20, the structure that is connected of the 2nd TFT20 and organic EL 50 is described.As in embodiment 3 illustrated mistakes, the contact areas of organic EL 50 and the 2nd TFT20 see through transparency electrode 52 from below substrate 1 under the situation of the radiative mode in outside (bottom-emission), mostly be non-light-emitting area.In addition, in numerous integrated circuit etc.,,, wish to reduce as far as possible the contact area if display device then improves resolution in order to realize improving integrated level.From such viewpoint, no matter be under the anode 52 direct-connected situations of the active layer 16 of the 2nd TFT20 and organic EL 50, still not directly to connect but make metal connecting layer (Al layer or Cr layer etc.) under the situation of centre in order to improve connection performance, all as shown in Figure 15, best overlay forms the 1st contact hole 70 of interlayer dielectric 14 and the 2nd contact hole 72 of the 1st planarization insulating layer 18.
But like that when overlapping to form a plurality of contact hole 10, contact hole amounts to jump (h70+h72) and strengthens shown in Figure 15 (a), and the surface flatness of the layer that forms on contact hole reduces.And then, for of the short circuit of the bad anode that causes 52 of the coating that prevents the light emitting element layer 51 in the anode edge district with negative electrode 57, just like the situation of the 2nd planarization insulating layer 61 that adopts the marginarium that covers anode 52 shown in Figure 15 (a) like that, and the 2nd planarization insulating layer 61 is at the central area opening of anode 52.Thereby the peristome of the 2nd planarization insulating layer 61 becomes and is formed near the above-mentioned the 1st and the 2nd contact hole 70 and 72, the formation face of light emitting element layer 51 and then also be subjected to the influence of the jump h74 that the opening by the 2nd planarization insulating layer 61 causes.
On the other hand, organic EL 50 makes the photism organic compound that is included in the luminescent layer 55 luminous by flow through electric current in light emitting element layer 51, in the layer of light emitting element layer 51, if have aspect its thickness bigger poor, in the part thinner, be easy to cause then that electric field is concentrated than other, be easy to take place dim spot in such part, this is known.Because dim spot reduces display quality, also enlarges by element drives mostly in addition, therefore also will shorten component life.Thereby, when the upper strata of contact areas forms organic EL 50, requirement improves the flatness of the formation face of light emitting element layer 51 as far as possible, from the viewpoint of the reliability that improves light emitting element layer 51, the contact point structure that the such light emitting element layer 51 of Figure 15 is formed on the concavo-convex very many face is unfavorable.
Figure 16 illustrates the example of the method for attachment of the flatness on the formation face that has improved light emitting element layer 51 according to above problem.Figure 16 (a) illustrates the active layer 16 of the 2nd TFT20 and the profile construction of the contact portion of the anode 52 of organic EL 50, and Figure 16 (b) illustrates the summary planar configuration of this contact portion.It is beyond these 2 of the top grids that connection shown in Figure 16 structure is removed the 2nd planarization insulating layer 61 that there is the marginarium that covers anode 52 and 2TFT, identical with the Fig. 8 that in embodiment 1, illustrated and Fig. 9, the configuration of staggering of the link position of the active layer 16 of the link position of wiring layer 40 and anode 52 and wiring layer 40 and the 2nd TFT20.By adopting such design, in the contact areas of wiring layer 40 and anode 52, anode surface is the influence that the formation face of light emitting element layer 51 only is subjected to the jump h72 that caused by the 2nd contact hole 72, thereby and be not subjected to the influence of the jump h70 that causes by the 1st contact hole 70 as shown in Figure 15., as from Figure 15 and Figure 16 more understandable, can seek to improve light emitting element layer and form face, particularly form the flatness that element layer in the luminous zone of each pixel of luminescent layer 55 forms face.
The formation face that Figure 17 shows the light emitting element layer that is used to make above-mentioned Figure 16 is smooth method further.In example shown in Figure 17, identical with Figure 16, when connecting wiring layer 40 is staggered from the formation position of the 1st contact hole 70 with the formation position of the 2nd contact hole 72 of the anode 52 of organic EL 50, covered the 2nd contact hole 72 with the 2nd planarization insulating layer 61.Thereby in the formation zone of luminescent layer 55, the 1st contact hole 70 be from saying, also can not be subjected to the influence of the jump that caused by the 2nd contact hole 72, can further improve the flatness that light emitting element layer forms face.In addition, therefore the 2nd planarization insulating layer 61 can also prevent the short circuit of anode 52 and negative electrode 57 etc. reliably owing to covered the marginarium of anode 52.
Here, the luminous zone of organic EL becomes anode 52 and negative electrode 57 and is clamped in the luminescent layer 55 of intermediate configurations and relative zone, and the zone that forms the 2nd planarization insulating layer 61 between anode 52 and light emitting element layer 51 is not luminous.Thereby, in structure shown in Figure 17, strictly say the top that covers the 2nd contact hole 72 because the 2nd planarization insulating layer 61 not only covers the edge of anode 52, so the corresponding minimizing in luminous zone.But as illustrating,, then watch the formation district of wiring layer 40 to become non-light-emitting area from the outside if formed wiring layer 40 of light-proofness etc. in lower floor.Thereby, as shown in figure 17, promptly be to adopt the 2nd planarization insulating layer 61 to cover the 2nd contact hole 72 structures, the also minimizing of the actual light-emitting area of each pixel that can suppress to cause thus.
Even the method that covers contact hole with the 2nd planarization insulating layer 61 adopts 70, the 72 stacked designs of the 1st and the 2nd contact hole as above-mentioned Figure 15, also can bring into play and improve the effect that light emitting element layer forms the flatness of face.Promptly, the profile construction of contact portion as shown in figure 18 is such, the active layer 16 of the 2nd TFT20 is connected by the 1st and the 2nd contact hole 70,72 that overlaps to form with the anode 52 of organic EL 50, by these 2 contact holes, cover the zone of the dark calixconcavity of anode 52 upper surfaces with the 2nd planarization insulating layer 61.Thereby the light emitting element layer formation face in contact hole 70 and 72 tops becomes the good face of flatness that forms with the 2nd planarization insulating layer 61.In addition, owing to form this 2 contact holes 70,72 in identical position among Figure 18,, can make contributions to improving the luminous zone in addition so can easily improve the interior arrangements of components efficient of a pixel.
Figure 19 illustrates that another light emitting element layer forms the flattening method of face. is with Figure 17 dissimilarity, in the formation district of the 2nd contact hole 72, on anode 52, do not form the 2nd planarization insulating layer 61, but optionally form embedding layer 62, the calixconcavity that landfill is caused by contact hole.By on the anode 52 that covers contact hole 72, optionally forming embedding layer 62,, also can make the light emitting element layer formation face on the contact hole smooth like this even under the situation that the 2nd planarization insulating layer 61 grades are not set.In addition, as shown in figure 20, overlap to form the 1st and the 2nd contact hole at 70,72 o'clock, identically with Figure 19 also can adopt embedding layer 62.In Figure 20, in the zone that overlaps to form 2 contact holes, on anode 52, optionally form embedding layer 62, the dark calixconcavity that landfill is formed by 2 contact holes.In each of Figure 19 and Figure 20, light emitting element layer 51 forms in the district at contact hole, becomes on the smooth face that is formed on embedding layer 62, can prevent that the light emitting element layer in this zone from producing undesirable situation.
In addition, can be material arbitrarily if its upper surface of material of the 2nd planarization insulating layer 61 and above-mentioned embedding layer 62 is smooth, and it is desirable to react and do not have the stable insulativity material of the property of water-bearing with light emitting element layer 51.For example can use polyimide, HMOSO, TOMCAT, TEOS etc.
As discussed above, in the present invention, can relax dispersiveness, can make dispersed equalization, can prevent luminosity dispersiveness in the driven element etc. to the supply of electrical energy of driven element to the transistor characteristic of driven element supply of electrical energy such as organic EL.
In addition, in the present invention,, can in limited area, dispose essential transistor or element etc. expeditiously by connect driven element and transistor with the number of connections of minimum limit to this component feeding electric energy.Thereby when for example adopting EL element etc. as driven element, can improve with a pixel is light-emitting area rate in unit etc.
And then, can improve the flatness of the face that forms driven element in the present invention, can improve the reliability of driven element.

Claims (7)

1. semiconductor devices has:
Receive the switch thin film transistor (TFT) that signal is carried out work, input data signal at grid;
Be arranged between driving power and the driven element, control the element drives thin film transistor (TFT) that supplies to the electric energy of above-mentioned driven element from above-mentioned driving power according to the data-signal of supplying with thin film transistor (TFT) from above-mentioned switch,
And then, drive with between the thin film transistor (TFT) at above-mentioned driving power and said elements, be provided with said elements and drive the compensation thin film transistor (TFT) of using thin film transistor (TFT) opposite conduction characteristic, it is characterized in that:
Said elements drives with thin film transistor (TFT) and the above-mentioned compensation orientation with thin film transistor (TFT) and is configured to along the bearing of trend of supplying with the data line of above-mentioned data-signal to above-mentioned switch with thin film transistor (TFT).
2. display device, this display device is the display device of active array type, wherein each of a plurality of pixels of rectangular ground configuration possesses driven element at least and the element drives thin film transistor (TFT) that supplies to driven element from the electric energy of driving power, it is characterized in that:
Side in the row of the matrix of each pixel region of above-mentioned a plurality of pixels and the limit of column direction is longer than the opposing party, the said elements driving limit configuration of the orientation of thin film transistor (TFT) along the length of above-mentioned pixel region.
3. the display device described in claim 2 is characterized in that:
The limit of the matrix column direction of above-mentioned pixel region is than the length of line direction, and the orientation that said elements drives with thin film transistor (TFT) disposes along above-mentioned column direction.
4. a display device is characterized in that,
Possess:
Drive current from power lead is supplied at least one element drives thin film transistor (TFT) of corresponding driven element; And
The Data Control said elements of being supplied with during according to selection drives the switch thin film transistor (TFT) with thin film transistor (TFT),
The orientation that said elements drives with thin film transistor (TFT) is configured to along the bearing of trend of supplying with the data line of above-mentioned data-signal to above-mentioned switch with thin film transistor (TFT).
5. the display device described in claim 4 is characterized in that:
Said elements drives with the orientation of thin film transistor (TFT) and above-mentioned switch inconsistent with the orientation of thin film transistor (TFT).
As claim 4,5 each described in display device, it is characterized in that:
Said elements drives to form with thin film transistor (TFT) said elements is driven with the orientation of the thin film transistor (TFT) direction of scanning along the linear pulse laser device that is used for this transistorized channel region is heat-treated.
7. display device as claimed in claim 4 is characterized in that:
Above-mentioned driven element is the organic electroluminescent device that adopts organic compound in luminescent layer.
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