CN1955786A - 相位调制元件及其制造方法、结晶化装置及结晶化方法 - Google Patents
相位调制元件及其制造方法、结晶化装置及结晶化方法 Download PDFInfo
- Publication number
- CN1955786A CN1955786A CNA2006101646153A CN200610164615A CN1955786A CN 1955786 A CN1955786 A CN 1955786A CN A2006101646153 A CNA2006101646153 A CN A2006101646153A CN 200610164615 A CN200610164615 A CN 200610164615A CN 1955786 A CN1955786 A CN 1955786A
- Authority
- CN
- China
- Prior art keywords
- light
- mentioned
- phase modulation
- laser
- occulter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2/00—Demodulating light; Transferring the modulation of modulated light; Frequency-changing of light
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/06—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the phase of light
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
- G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1866—Transmission gratings characterised by their structure, e.g. step profile, contours of substrate or grooves, pitch variations, materials
- G02B5/1871—Transmissive phase gratings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02678—Beam shaping, e.g. using a mask
- H01L21/0268—Shape of mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Nonlinear Science (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
Claims (16)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP275867/2005 | 2005-09-22 | ||
JP2005275867 | 2005-09-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1955786A true CN1955786A (zh) | 2007-05-02 |
CN1955786B CN1955786B (zh) | 2010-09-01 |
Family
ID=37883171
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006101646153A Expired - Fee Related CN1955786B (zh) | 2005-09-22 | 2006-09-22 | 相位调制元件及其制造方法、结晶化装置及结晶化方法 |
Country Status (4)
Country | Link |
---|---|
US (3) | US7955432B2 (zh) |
KR (1) | KR20070033894A (zh) |
CN (1) | CN1955786B (zh) |
TW (1) | TW200713460A (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107290812A (zh) * | 2016-03-31 | 2017-10-24 | 株式会社岛津制作所 | 衍射光栅的制造方法、衍射效率计算方法及衍射光栅 |
CN113671618A (zh) * | 2021-08-13 | 2021-11-19 | Oppo广东移动通信有限公司 | 相位板、摄像头模组和移动终端 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080055698A1 (en) * | 2006-05-23 | 2008-03-06 | Samsung Electro-Mechanics Co., Ltd. | Optical modulator and optical modulator module for reducing laser speckle |
US8431448B2 (en) * | 2006-12-28 | 2013-04-30 | Dai Nippon Printing Co., Ltd. | Organic transistor element, and method of manufacturing the same by concurrently doping an organic semiconductor layer and wet etching an electrode provided on the organic semiconductor layer |
EP2677551A1 (en) * | 2012-06-21 | 2013-12-25 | Excico Group | Method for manufacturing a photovoltaic device using laser irradiation. |
CN103887230B (zh) * | 2014-03-28 | 2016-08-31 | 中国电子科技集团公司第二十四研究所 | 等离子体刻蚀AlSi的方法 |
GB2566477A (en) * | 2017-09-14 | 2019-03-20 | Nat Univ Ireland Galway | Method of processing a target material |
DE102020119395A1 (de) * | 2019-07-24 | 2021-01-28 | Shiloh Industries, Inc. | Metallblechbaugruppe mit nachbehandelter Schweißverbindung |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US289573A (en) * | 1883-12-04 | Window curtain and shade | ||
US5248575A (en) * | 1990-10-12 | 1993-09-28 | Seiko Epson Corporation | Photomask with phase shifter and method of fabricating semiconductor device by using the same |
JP2003173014A (ja) | 2001-12-07 | 2003-06-20 | Mitsubishi Electric Corp | 位相シフトマスクの製造方法、位相シフトマスク、および、装置 |
JP4347545B2 (ja) * | 2002-06-28 | 2009-10-21 | 株式会社 液晶先端技術開発センター | 結晶化装置および結晶化方法 |
US7470602B2 (en) * | 2002-10-29 | 2008-12-30 | Sumitomo Heavy Industries, Ltd. | Crystalline film and its manufacture method using laser |
KR100900902B1 (ko) * | 2002-11-18 | 2009-06-03 | 엘지디스플레이 주식회사 | 레이저 빔패턴 마스크 및 그 제조방법 |
TW200541078A (en) * | 2004-03-31 | 2005-12-16 | Adv Lcd Tech Dev Ct Co Ltd | Crystallization apparatus, crystallization method, device, optical modulation element, and display apparatus |
TW200605229A (en) * | 2004-07-28 | 2006-02-01 | Adv Lcd Tech Dev Ct Co Ltd | Method of manufacturing semiconductor device |
KR20090046833A (ko) * | 2006-08-15 | 2009-05-11 | 아사히 가라스 가부시키가이샤 | 파장 선택성 차광 소자 및 그것을 사용한 광헤드 장치 |
-
2006
- 2006-09-18 TW TW095134499A patent/TW200713460A/zh unknown
- 2006-09-19 KR KR1020060090657A patent/KR20070033894A/ko not_active Application Discontinuation
- 2006-09-20 US US11/523,567 patent/US7955432B2/en not_active Expired - Fee Related
- 2006-09-22 CN CN2006101646153A patent/CN1955786B/zh not_active Expired - Fee Related
-
2011
- 2011-05-06 US US13/102,679 patent/US20110233591A1/en not_active Abandoned
- 2011-05-06 US US13/102,716 patent/US20110212001A1/en not_active Abandoned
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107290812A (zh) * | 2016-03-31 | 2017-10-24 | 株式会社岛津制作所 | 衍射光栅的制造方法、衍射效率计算方法及衍射光栅 |
CN113671618A (zh) * | 2021-08-13 | 2021-11-19 | Oppo广东移动通信有限公司 | 相位板、摄像头模组和移动终端 |
Also Published As
Publication number | Publication date |
---|---|
US20110233591A1 (en) | 2011-09-29 |
US7955432B2 (en) | 2011-06-07 |
CN1955786B (zh) | 2010-09-01 |
US20070063184A1 (en) | 2007-03-22 |
TW200713460A (en) | 2007-04-01 |
KR20070033894A (ko) | 2007-03-27 |
US20110212001A1 (en) | 2011-09-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1955786A (zh) | 相位调制元件及其制造方法、结晶化装置及结晶化方法 | |
CN1249779C (zh) | 制造晶体半导体材料的方法和制作半导体器件的方法 | |
CN1240884C (zh) | 非晶硅结晶法 | |
CN1531023A (zh) | 激光器照射装置、激光器照射方法以及半导体装置的制造方法 | |
US7470602B2 (en) | Crystalline film and its manufacture method using laser | |
CN1550863A (zh) | 半导体薄膜、薄膜晶体管、及其制造方法和制造设备 | |
CN1574196A (zh) | 有源矩阵衬底的制造方法及使用所述衬底的图象显示设备 | |
CN1457103A (zh) | 薄膜晶体管及其制造方法 | |
CN1310284C (zh) | 薄膜晶体管用非晶硅的结晶方法 | |
CN1934682A (zh) | 激光辐照方法和激光辐照装置 | |
CN101042511A (zh) | 使用激光掩模结晶的显示器件 | |
CN1574216A (zh) | 形成结晶半导体层的方法和装置,以及制造半导体装置的方法 | |
CN1574213A (zh) | 结晶装置,结晶方法,薄膜晶体管的制造方法、薄膜晶体管和显示装置 | |
CN1637483A (zh) | 激光掩模及使用它的结晶方法 | |
CN100343954C (zh) | 晶体硅的制作方法和使用晶体硅的开关器件 | |
TW200424031A (en) | Laser processing apparatus and laser processing method | |
CN1658373A (zh) | 光照射装置及方法、结晶装置及方法、设备和光调制元件 | |
CN1649083A (zh) | 结晶设备和方法、电子器件的制造方法、电子器件以及光学调制元件 | |
CN1404101A (zh) | 半导体器件及其制造方法 | |
CN1495847A (zh) | 结晶装置、结晶方法及所使用的相移掩模和滤波器 | |
CN101038867A (zh) | 结晶半导体薄膜的方法 | |
JP2008270726A (ja) | 結晶化装置、結晶化方法、デバイス、および光変調素子 | |
CN100338730C (zh) | 结晶装置、结晶方法、薄膜晶体管以及显示装置 | |
CN1716071A (zh) | 结晶方法、薄膜晶体管制造方法、薄膜晶体管及显示装置 | |
CN1354495A (zh) | 半导体薄膜及其生产方法和设备、及生产单晶薄膜的方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SHARP CO., LTD. Free format text: FORMER OWNER: CO., LTD LCD ADVANCED TECHNOLOGY DEVELOPMENT CENTER Effective date: 20100409 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: KANAGAWA PREFECTURE, JAPAN COUNTY TO: OSAKA, JAPAN |
|
TA01 | Transfer of patent application right |
Effective date of registration: 20100409 Address after: Osaka Applicant after: Sharp Corporation Address before: Kanagawa Applicant before: Liguid Crystal Advanced Technology Development Center K. K. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100901 Termination date: 20160922 |
|
CF01 | Termination of patent right due to non-payment of annual fee |