KR20070033894A - 위상변조소자, 위상변조소자의 제조방법, 결정화장치 및결정화방법 - Google Patents

위상변조소자, 위상변조소자의 제조방법, 결정화장치 및결정화방법 Download PDF

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Publication number
KR20070033894A
KR20070033894A KR1020060090657A KR20060090657A KR20070033894A KR 20070033894 A KR20070033894 A KR 20070033894A KR 1020060090657 A KR1020060090657 A KR 1020060090657A KR 20060090657 A KR20060090657 A KR 20060090657A KR 20070033894 A KR20070033894 A KR 20070033894A
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KR
South Korea
Prior art keywords
light
incident
substrate
phase
film
Prior art date
Application number
KR1020060090657A
Other languages
English (en)
Korean (ko)
Inventor
히로유키 오가와
마사토 히라마츠
Original Assignee
가부시키가이샤 에키쇼센탄 기쥬쓰 가이하쓰센타
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 에키쇼센탄 기쥬쓰 가이하쓰센타 filed Critical 가부시키가이샤 에키쇼센탄 기쥬쓰 가이하쓰센타
Publication of KR20070033894A publication Critical patent/KR20070033894A/ko

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2/00—Demodulating light; Transferring the modulation of modulated light; Frequency-changing of light
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/06—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the phase of light
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1847—Manufacturing methods
    • G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1866—Transmission gratings characterised by their structure, e.g. step profile, contours of substrate or grooves, pitch variations, materials
    • G02B5/1871—Transmissive phase gratings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H01L21/0268—Shape of mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Nonlinear Science (AREA)
  • Recrystallisation Techniques (AREA)
KR1020060090657A 2005-09-22 2006-09-19 위상변조소자, 위상변조소자의 제조방법, 결정화장치 및결정화방법 KR20070033894A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2005-00275867 2005-09-22
JP2005275867 2005-09-22

Publications (1)

Publication Number Publication Date
KR20070033894A true KR20070033894A (ko) 2007-03-27

Family

ID=37883171

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060090657A KR20070033894A (ko) 2005-09-22 2006-09-19 위상변조소자, 위상변조소자의 제조방법, 결정화장치 및결정화방법

Country Status (4)

Country Link
US (3) US7955432B2 (zh)
KR (1) KR20070033894A (zh)
CN (1) CN1955786B (zh)
TW (1) TW200713460A (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080055698A1 (en) * 2006-05-23 2008-03-06 Samsung Electro-Mechanics Co., Ltd. Optical modulator and optical modulator module for reducing laser speckle
WO2008081936A1 (ja) * 2006-12-28 2008-07-10 Dai Nippon Printing Co., Ltd. 有機トランジスタ素子、その製造方法、有機発光トランジスタ及び発光表示装置
EP2677551A1 (en) * 2012-06-21 2013-12-25 Excico Group Method for manufacturing a photovoltaic device using laser irradiation.
CN103887230B (zh) * 2014-03-28 2016-08-31 中国电子科技集团公司第二十四研究所 等离子体刻蚀AlSi的方法
CN107290812A (zh) * 2016-03-31 2017-10-24 株式会社岛津制作所 衍射光栅的制造方法、衍射效率计算方法及衍射光栅
GB2566477A (en) 2017-09-14 2019-03-20 Nat Univ Ireland Galway Method of processing a target material
US20210025417A1 (en) * 2019-07-24 2021-01-28 Shiloh Industries, Inc. Sheet metal assembly with conditioned weld joint
CN113671618A (zh) * 2021-08-13 2021-11-19 Oppo广东移动通信有限公司 相位板、摄像头模组和移动终端

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US289573A (en) * 1883-12-04 Window curtain and shade
US5248575A (en) * 1990-10-12 1993-09-28 Seiko Epson Corporation Photomask with phase shifter and method of fabricating semiconductor device by using the same
JP2003173014A (ja) 2001-12-07 2003-06-20 Mitsubishi Electric Corp 位相シフトマスクの製造方法、位相シフトマスク、および、装置
JP4347545B2 (ja) * 2002-06-28 2009-10-21 株式会社 液晶先端技術開発センター 結晶化装置および結晶化方法
US7470602B2 (en) * 2002-10-29 2008-12-30 Sumitomo Heavy Industries, Ltd. Crystalline film and its manufacture method using laser
KR100900902B1 (ko) * 2002-11-18 2009-06-03 엘지디스플레이 주식회사 레이저 빔패턴 마스크 및 그 제조방법
TW200541078A (en) * 2004-03-31 2005-12-16 Adv Lcd Tech Dev Ct Co Ltd Crystallization apparatus, crystallization method, device, optical modulation element, and display apparatus
TW200605229A (en) * 2004-07-28 2006-02-01 Adv Lcd Tech Dev Ct Co Ltd Method of manufacturing semiconductor device
JPWO2008020591A1 (ja) * 2006-08-15 2010-01-07 旭硝子株式会社 波長選択性遮光素子およびそれを用いた光ヘッド装置

Also Published As

Publication number Publication date
US20110233591A1 (en) 2011-09-29
CN1955786A (zh) 2007-05-02
US20110212001A1 (en) 2011-09-01
CN1955786B (zh) 2010-09-01
TW200713460A (en) 2007-04-01
US7955432B2 (en) 2011-06-07
US20070063184A1 (en) 2007-03-22

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