CN1574216A - 形成结晶半导体层的方法和装置,以及制造半导体装置的方法 - Google Patents
形成结晶半导体层的方法和装置,以及制造半导体装置的方法 Download PDFInfo
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- CN1574216A CN1574216A CNA2004100552018A CN200410055201A CN1574216A CN 1574216 A CN1574216 A CN 1574216A CN A2004100552018 A CNA2004100552018 A CN A2004100552018A CN 200410055201 A CN200410055201 A CN 200410055201A CN 1574216 A CN1574216 A CN 1574216A
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
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- Power Engineering (AREA)
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- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
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- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Recrystallisation Techniques (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (24)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003158136A JP2004363241A (ja) | 2003-06-03 | 2003-06-03 | 結晶化半導体層の形成方法及び形成装置ならびに半導体装置の製造方法 |
JP158136/2003 | 2003-06-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1574216A true CN1574216A (zh) | 2005-02-02 |
CN100365763C CN100365763C (zh) | 2008-01-30 |
Family
ID=34051650
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100552018A Expired - Fee Related CN100365763C (zh) | 2003-06-03 | 2004-06-03 | 形成结晶半导体层的方法和装置及制造半导体装置的方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US6987035B2 (zh) |
JP (1) | JP2004363241A (zh) |
KR (1) | KR101037840B1 (zh) |
CN (1) | CN100365763C (zh) |
TW (1) | TW200503065A (zh) |
Cited By (2)
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KR20200129140A (ko) * | 2018-03-06 | 2020-11-17 | 코닝 인코포레이티드 | 기판 두께를 제어하기 위한 장치 및 방법 |
CN112216603A (zh) * | 2019-07-10 | 2021-01-12 | 创能动力科技有限公司 | 用于晶片的激光处理方法及半导体装置 |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
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US20060021977A1 (en) * | 2004-07-30 | 2006-02-02 | Menegus Harry E | Process and apparatus for scoring a brittle material incorporating moving optical assembly |
JP2006100661A (ja) * | 2004-09-30 | 2006-04-13 | Sony Corp | 薄膜半導体装置の製造方法 |
US20060105533A1 (en) * | 2004-11-16 | 2006-05-18 | Chong Yung F | Method for engineering hybrid orientation/material semiconductor substrate |
JP4607669B2 (ja) * | 2005-06-06 | 2011-01-05 | 株式会社 液晶先端技術開発センター | レーザアニール用位相シフタ及びレーザアニール装置 |
TWI260747B (en) * | 2005-08-24 | 2006-08-21 | Quanta Display Inc | A method for forming a thin film transistor, and a method for transforming an amorphous layer into a poly crystal layer of a single crystal layer |
KR100731752B1 (ko) * | 2005-09-07 | 2007-06-22 | 삼성에스디아이 주식회사 | 박막트랜지스터 |
KR100713895B1 (ko) * | 2006-04-06 | 2007-05-04 | 비오이 하이디스 테크놀로지 주식회사 | 다결정막의 형성방법 |
US7579654B2 (en) * | 2006-05-31 | 2009-08-25 | Corning Incorporated | Semiconductor on insulator structure made using radiation annealing |
TWI479660B (zh) | 2006-08-31 | 2015-04-01 | Semiconductor Energy Lab | 薄膜電晶體,其製造方法,及半導體裝置 |
JP5227552B2 (ja) * | 2006-08-31 | 2013-07-03 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタ及びその作製方法、並びに半導体装置 |
US20090078940A1 (en) * | 2007-09-26 | 2009-03-26 | Sharp Laboratories Of America, Inc. | Location-controlled crystal seeding |
US10325773B2 (en) | 2012-06-12 | 2019-06-18 | Novellus Systems, Inc. | Conformal deposition of silicon carbide films |
US9234276B2 (en) | 2013-05-31 | 2016-01-12 | Novellus Systems, Inc. | Method to obtain SiC class of films of desired composition and film properties |
CN105304494B (zh) * | 2014-07-25 | 2019-06-28 | Imec 非营利协会 | 一种形成nmos晶体管装置的锗通道层、nmos晶体管装置和cmos装置的方法 |
KR102467462B1 (ko) * | 2017-12-05 | 2022-11-16 | 삼성디스플레이 주식회사 | 레이저 결정화 장치 |
JP7114708B2 (ja) * | 2018-06-27 | 2022-08-08 | ギガフォトン株式会社 | レーザ加工装置、レーザ加工システム、及びレーザ加工方法 |
KR20230085954A (ko) | 2018-10-19 | 2023-06-14 | 램 리써치 코포레이션 | 갭 충진 (gapfill) 을 위한 도핑되거나 도핑되지 않은 실리콘 카바이드 증착 및 원격 수소 플라즈마 노출 |
CN111092015A (zh) * | 2018-10-23 | 2020-05-01 | 宸鸿光电科技股份有限公司 | 半导体制造方法与半导体层 |
JPWO2020230317A1 (zh) * | 2019-05-16 | 2020-11-19 |
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JP2929660B2 (ja) * | 1990-04-11 | 1999-08-03 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
US5691115A (en) * | 1992-06-10 | 1997-11-25 | Hitachi, Ltd. | Exposure method, aligner, and method of manufacturing semiconductor integrated circuit devices |
JP3180481B2 (ja) * | 1992-11-24 | 2001-06-25 | 日新電機株式会社 | 薄膜トランジスタ用単結晶シリコン層の形成方法 |
JP3315738B2 (ja) * | 1992-12-03 | 2002-08-19 | 株式会社東芝 | レーザアニール方法及び液晶表示装置の製造方法 |
TW281786B (zh) * | 1993-05-26 | 1996-07-21 | Handotai Energy Kenkyusho Kk | |
JP3675886B2 (ja) * | 1995-03-17 | 2005-07-27 | 株式会社半導体エネルギー研究所 | 薄膜半導体デバイスの作製方法 |
JPH09320961A (ja) * | 1996-05-31 | 1997-12-12 | Nec Corp | 半導体製造装置及び薄膜トランジスタの製造方法 |
JP3580033B2 (ja) * | 1996-06-20 | 2004-10-20 | ソニー株式会社 | 薄膜半導体装置及びその製造方法とレーザアニール装置 |
JP2000082669A (ja) | 1998-09-07 | 2000-03-21 | Japan Science & Technology Corp | 太陽電池用多結晶半導体膜の製造方法 |
JP4403599B2 (ja) * | 1999-04-19 | 2010-01-27 | ソニー株式会社 | 半導体薄膜の結晶化方法、レーザ照射装置、薄膜トランジスタの製造方法及び表示装置の製造方法 |
KR100327087B1 (ko) * | 1999-06-28 | 2002-03-13 | 구본준, 론 위라하디락사 | 레이저 어닐링 방법 |
JP2001127301A (ja) | 1999-10-27 | 2001-05-11 | Sanyo Electric Co Ltd | 半導体装置および半導体装置の製造方法 |
JP2001267240A (ja) * | 2000-03-22 | 2001-09-28 | Matsushita Electric Ind Co Ltd | 低温ポリシリコンtft装置の製造方法 |
JP4145003B2 (ja) * | 2000-07-14 | 2008-09-03 | 株式会社ルネサステクノロジ | 半導体集積回路装置の製造方法 |
JP4744700B2 (ja) * | 2001-01-29 | 2011-08-10 | 株式会社日立製作所 | 薄膜半導体装置及び薄膜半導体装置を含む画像表示装置 |
JP3973849B2 (ja) * | 2001-03-09 | 2007-09-12 | 住友重機械工業株式会社 | レーザアニール方法 |
JP2003086604A (ja) | 2001-09-10 | 2003-03-20 | Advanced Lcd Technologies Development Center Co Ltd | 薄膜半導体装置及びその基板ならびにその製造方法 |
US7214573B2 (en) * | 2001-12-11 | 2007-05-08 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device that includes patterning sub-islands |
JP3992976B2 (ja) * | 2001-12-21 | 2007-10-17 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
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2003
- 2003-06-03 JP JP2003158136A patent/JP2004363241A/ja active Pending
-
2004
- 2004-06-02 US US10/857,941 patent/US6987035B2/en not_active Expired - Fee Related
- 2004-06-02 TW TW093115878A patent/TW200503065A/zh unknown
- 2004-06-03 KR KR1020040041566A patent/KR101037840B1/ko not_active IP Right Cessation
- 2004-06-03 CN CNB2004100552018A patent/CN100365763C/zh not_active Expired - Fee Related
-
2005
- 2005-08-16 US US11/203,962 patent/US20060040436A1/en not_active Abandoned
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20200129140A (ko) * | 2018-03-06 | 2020-11-17 | 코닝 인코포레이티드 | 기판 두께를 제어하기 위한 장치 및 방법 |
US20210053858A1 (en) * | 2018-03-06 | 2021-02-25 | Corning Incorporated | Apparatus and method for controlling substrate thickness |
KR102670445B1 (ko) | 2018-03-06 | 2024-05-30 | 코닝 인코포레이티드 | 기판 두께를 제어하기 위한 장치 및 방법 |
CN112216603A (zh) * | 2019-07-10 | 2021-01-12 | 创能动力科技有限公司 | 用于晶片的激光处理方法及半导体装置 |
Also Published As
Publication number | Publication date |
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US20060040436A1 (en) | 2006-02-23 |
CN100365763C (zh) | 2008-01-30 |
KR101037840B1 (ko) | 2011-05-31 |
KR20040104430A (ko) | 2004-12-10 |
JP2004363241A (ja) | 2004-12-24 |
US20050014315A1 (en) | 2005-01-20 |
US6987035B2 (en) | 2006-01-17 |
TW200503065A (en) | 2005-01-16 |
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