TW281786B - - Google Patents

Info

Publication number
TW281786B
TW281786B TW083104759A TW83104759A TW281786B TW 281786 B TW281786 B TW 281786B TW 083104759 A TW083104759 A TW 083104759A TW 83104759 A TW83104759 A TW 83104759A TW 281786 B TW281786 B TW 281786B
Authority
TW
Taiwan
Application number
TW083104759A
Original Assignee
Handotai Energy Kenkyusho Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Handotai Energy Kenkyusho Kk filed Critical Handotai Energy Kenkyusho Kk
Application granted granted Critical
Publication of TW281786B publication Critical patent/TW281786B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
TW083104759A 1993-05-26 1994-05-25 TW281786B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14700193 1993-05-26

Publications (1)

Publication Number Publication Date
TW281786B true TW281786B (zh) 1996-07-21

Family

ID=15420338

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083104759A TW281786B (zh) 1993-05-26 1994-05-25

Country Status (3)

Country Link
KR (1) KR0180573B1 (zh)
CN (4) CN1058584C (zh)
TW (1) TW281786B (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW451284B (en) 1996-10-15 2001-08-21 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
TWI282126B (en) * 2001-08-30 2007-06-01 Semiconductor Energy Lab Method for manufacturing semiconductor device
JP3992976B2 (ja) * 2001-12-21 2007-10-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
DE10217876A1 (de) * 2002-04-22 2003-11-06 Infineon Technologies Ag Verfahren zur Herstellung dünner metallhaltiger Schichten mit geringem elektrischen Widerstand
CN100347820C (zh) * 2002-05-22 2007-11-07 统宝香港控股有限公司 有源矩阵显示器件及其制作
JP2004363241A (ja) * 2003-06-03 2004-12-24 Advanced Lcd Technologies Development Center Co Ltd 結晶化半導体層の形成方法及び形成装置ならびに半導体装置の製造方法
KR100514181B1 (ko) 2003-09-03 2005-09-13 삼성에스디아이 주식회사 시리즈 박막트랜지스터, 그를 이용한 능동 매트릭스유기전계발광소자 및 상기 능동 매트릭스유기전계발광소자의 제조방법
CN101140940A (zh) * 2006-08-18 2008-03-12 株式会社液晶先端技术开发中心 电子装置、显示装置、接口电路和差分放大装置
CN101419986B (zh) * 2008-12-05 2011-05-11 北京时代民芯科技有限公司 一种防边缘漏电的双边缘抗总剂量辐射加固版图结构
TWI543358B (zh) * 2014-01-13 2016-07-21 友達光電股份有限公司 顯示面板的畫素

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55162224A (en) * 1979-06-06 1980-12-17 Toshiba Corp Preparation of semiconductor device
US4727044A (en) * 1984-05-18 1988-02-23 Semiconductor Energy Laboratory Co., Ltd. Method of making a thin film transistor with laser recrystallized source and drain
DE3587100T2 (de) * 1984-10-09 1993-09-09 Fujitsu Ltd Verfahren zur herstellung einer auf der halbleiter-auf-isolator-technologie basierenden integrierten schaltung.
JPS61102628A (ja) * 1984-10-25 1986-05-21 Sony Corp 液晶表示装置
JP2655865B2 (ja) * 1988-03-16 1997-09-24 株式会社日立製作所 液晶表示装置の製造方法
JP2653099B2 (ja) * 1988-05-17 1997-09-10 セイコーエプソン株式会社 アクティブマトリクスパネル，投写型表示装置及びビューファインダー
JPH0227320A (ja) * 1988-07-18 1990-01-30 Hitachi Ltd 薄膜半導体表示装置とその製造方法
JPH0252419A (ja) * 1988-08-16 1990-02-22 Sony Corp 半導体基板の製造方法
US5147826A (en) * 1990-08-06 1992-09-15 The Pennsylvania Research Corporation Low temperature crystallization and pattering of amorphous silicon films
JP3280420B2 (ja) * 1992-07-30 2002-05-13 株式会社紀文フードケミファ 豆乳を含むカルシウム吸収促進組成物

Also Published As

Publication number Publication date
CN1881568A (zh) 2006-12-20
CN1258104A (zh) 2000-06-28
CN1101167A (zh) 1995-04-05
KR0180573B1 (ko) 1999-03-20
KR940027187A (ko) 1994-12-10
CN100350627C (zh) 2007-11-21
CN1058584C (zh) 2000-11-15
CN1258102A (zh) 2000-06-28
CN100501980C (zh) 2009-06-17
CN100379017C (zh) 2008-04-02

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees