TWI456813B - 相變記憶體結構及方法 - Google Patents

相變記憶體結構及方法 Download PDF

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TWI456813B
TWI456813B TW100130818A TW100130818A TWI456813B TW I456813 B TWI456813 B TW I456813B TW 100130818 A TW100130818 A TW 100130818A TW 100130818 A TW100130818 A TW 100130818A TW I456813 B TWI456813 B TW I456813B
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phase change
electrode
forming
heater
insulator
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TW100130818A
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TW201214816A (en
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Jun Liu
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Micron Technology Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8413—Electrodes adapted for resistive heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)

Claims (26)

  1. 一種形成一相變記憶體結構之方法，該方法包括：在一相變記憶體單元之一第一導電元件上且在一介電材料上形成一絕緣體材料；藉由修改該絕緣體材料之一部分而形成與該第一導電元件自對準之一加熱器，其中修改該絕緣體材料之該部分包含下列之至少一者：加熱該絕緣體材料之該部分；及在該絕緣體材料與該第一導電元件之一材料之間產生一反應以形成該加熱器；在該加熱器及形成於該介電材料上之該絕緣體材料之至少一部分上形成一相變材料；及在該相變材料上形成該相變記憶體單元之一第二導電元件。
  2. 如請求項1之方法，其包含在該加熱器上且在該絕緣體材料之一未經修改部分上形成該相變材料。
  3. 如請求項1之方法，其中加熱該絕緣體材料之該部分包含以下中之至少一者：一快速熱退火(RTA)製程；一雷射退火製程；及一微波加熱製程。
  4. 如請求項1之方法，其中該絕緣體材料係氮化鋁(AlN)，該第一導電元件之該材料係鈦(Ti)及氮化鈦(TiN)中之至少一者，且其中該反應形成一氮化鈦鋁(TiAlN)加熱器。
  5. 如請求項1之方法，其中該絕緣體材料係氮化矽(SiN)，該第一導電元件之該材料係氮化鈦(TiN)及氮化鉭(TaN)中之至少一者，且其中該反應形成一氮化鈦矽(TiSiN)加熱器及一氮化鉭矽(TaSiN)加熱器中之至少一者。
  6. 如請求項1之方法，其包含經由一遮蔽及蝕刻製程形成與該第一導電元件自對準之該加熱器。
  7. 如請求項1之方法，其中形成該第一導電元件包含形成一底部電極且形成該第二導電元件包含形成一頂部電極。
  8. 一種形成一相變記憶體結構之方法，該方法包括：在一相變記憶體單元之一第一電極上形成一絕緣性黏附材料；藉由加熱該絕緣性黏附材料之至少一部分形成與該第一電極自對準之一介面加熱器，該介面加熱器係不同於該絕緣性黏附材料之一材料；在該介面加熱器上形成一相變材料；及在該相變材料上形成一第二電極。
  9. 如請求項8之方法，其包含：形成該第一電極以使得該第一電極之一側表面係與一介電材料接觸；及在該介電材料之一上部表面之至少一部分上形成該絕緣性黏附材料。
  10. 如請求項9之方法，其包含在該介面加熱器之一上部表面上且在該絕緣性黏附材料之至少一部分之一上部表面 上形成該相變材料。
  11. 如請求項8之方法，其包含：藉由在形成於一介電材料中之一通孔中沈積一電極材料而形成該第一電極；及在於該第一電極上形成該絕緣性黏附材料之前對該第一電極執行一平坦化製程。
  12. 如請求項8之方法，其中加熱該絕緣性黏附材料之該至少一部分包含對該相變記憶體結構執行一熱退火製程。
  13. 如請求項8之方法，其中加熱該絕緣性黏附材料之該至少一部分包含對該絕緣性黏附材料之該至少一部分執行一微波加熱製程。
  14. 如請求項8之方法，其中加熱該絕緣性黏附材料之該至少一部分包含對該絕緣性黏附材料之該至少一部分執行一雷射退火製程。
  15. 如請求項8之方法，其包含藉由在於該第一電極上形成該絕緣性黏附材料之前且在加熱該絕緣性黏附材料之該至少一部分之前執行一原位電漿處理製程來還原對該第一電極之氧化。
  16. 一種相變記憶體結構，其包括：一底部電極，其具有與一介電材料接觸之一側表面；一相變材料，其在該底部電極與一頂部電極之間；一絕緣體材料，其具有提供針對該相變材料之至少一部分之一黏附性介面之一第一部分，其中該絕緣體材料具有小於約10nm之一厚度；及 一介面加熱器，其與該底部電極自對準且定位於該底部電極與該相變材料之間；其中該介面加熱器係該絕緣體材料之一經修改部分且係不同於該絕緣體材料之一材料。
  17. 如請求項16之記憶體結構，其中該絕緣體材料之該第一部分係形成於該介電材料及該底部電極之一經平坦化表面上。
  18. 如請求項16之記憶體結構，其中該底部電極係形成於形成於該介電材料中之一通孔中，且其中由該絕緣體材料之該第一部分提供之該黏附性介面包含與該相變材料與該介電材料之間的黏附性相比增加之黏附性。
  19. 如請求項16之記憶體結構，其中該自對準介面加熱器係藉由該絕緣體材料與該底部電極之一材料之間的一反應而形成。
  20. 如請求項16之記憶體結構，其中該底部電極係耦合至一金屬觸點，且其中該金屬觸點係耦合至對應於該相變記憶體結構之一存取電晶體之一源極及一汲極區域中之至少一者。
  21. 如請求項16之記憶體結構，其中該絕緣體材料係氮化鋁(AlN)及氮化矽(SiN)中之至少一者。
  22. 如請求項21之記憶體結構，其中該介面加熱器包含來自包含如下之群組之一材料：氮化鈦鋁(TiAlN)氮化鈦矽(TiSiN)；及 氮化鉭矽(TaSiN)。
  23. 一種相變記憶體單元，其包括：一存取裝置；一第一電極，其經由一導電觸點耦合至該存取裝置；一介面加熱器，其形成於該第一電極上且與該第一電極自對準；一相變材料，其形成於該自對準介面加熱器上且形成於一絕緣體材料之至少一部分上，該絕緣體材料形成於具有與該第一電極接觸之一側表面之一介電材料上；及一第二電極，其形成於該相變材料上；其中該自對準介面加熱器係經由一加熱製程修改之該絕緣體材料之一部分以使得該自對準介面加熱器係不同於該絕緣體材料之一材料。
  24. 如請求項23之相變記憶體單元，其中該介面加熱器經組態以產生熱來協助該記憶體單元之程式化。
  25. 如請求項23之相變記憶體單元，其中該介面加熱器具有有助於減少至該第一電極之熱損失之一導熱率。
  26. 一種操作一相變記憶體單元之方法，該方法包括：藉由在該相變記憶體單元之一頂部與底部電極之間提供一電壓差來程式化該記憶體單元；及經由形成於該底部電極上且與該底部電極自對準之一介面加熱器將局部化加熱提供至該記憶體單元之一相變材料之一作用區域；其中該介面加熱器回應於協助該作用區域之一狀態之 切換之該電壓差而產生熱以程式化該記憶體單元；且其中該介面加熱器係位於該相變材料與該底部電極之間的一介電材料之一經修改部分，該介電材料之該經修改部分係藉由下列之至少一者加以修改：一加熱製程；及該介電材料及該底部電極之一材料之間的一反應。
TW100130818A 2010-08-26 2011-08-26 相變記憶體結構及方法 TWI456813B (zh)

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Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8243506B2 (en) * 2010-08-26 2012-08-14 Micron Technology, Inc. Phase change memory structures and methods
JP5674548B2 (ja) * 2011-04-28 2015-02-25 株式会社日立製作所 半導体記憶装置
JP5824330B2 (ja) * 2011-11-07 2015-11-25 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
US8605497B2 (en) * 2011-12-22 2013-12-10 International Business Machines Corporation Parallel programming scheme in multi-bit phase change memory
US8614911B2 (en) * 2011-12-22 2013-12-24 International Business Machines Corporation Energy-efficient row driver for programming phase change memory
KR101911361B1 (ko) * 2012-06-18 2019-01-04 삼성전자주식회사 멀티 레벨 셀을 갖는 비-휘발성 메모리소자 및 그 형성 방법
US9082972B2 (en) 2012-07-24 2015-07-14 Hewlett-Packard Development Company, L.P. Bipolar resistive switch heat mitigation
US9153777B2 (en) * 2013-06-03 2015-10-06 Micron Technology, Inc. Thermally optimized phase change memory cells and methods of fabricating the same
US8828866B1 (en) * 2013-06-26 2014-09-09 Applied Materials, Inc. Methods for depositing a tantalum silicon nitride film
US9563371B2 (en) 2013-07-26 2017-02-07 Globalfoundreis Inc. Self-adjusting phase change memory storage module
US20150028280A1 (en) * 2013-07-26 2015-01-29 Micron Technology, Inc. Memory cell with independently-sized elements
US9419213B2 (en) * 2014-06-06 2016-08-16 The Regents Of The University Of Michigan Directly heated RF phase change switch
KR102212377B1 (ko) 2014-06-16 2021-02-04 삼성전자주식회사 상변화 메모리 소자의 제조 방법
US9425390B2 (en) 2014-10-16 2016-08-23 Micron Technology, Inc. Select device for memory cell applications
US9793207B1 (en) 2016-07-20 2017-10-17 International Business Machines Corporation Electrical antifuse including phase change material
FR3073076A1 (fr) * 2017-10-27 2019-05-03 Stmicroelectronics (Crolles 2) Sas Point memoire a materiau a changement de phase
FR3073075B1 (fr) 2017-10-27 2020-09-04 St Microelectronics Crolles 2 Sas Point memoire a materiau a changement de phase
US11038101B2 (en) 2017-11-21 2021-06-15 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure having a phase change memory device
US10693060B2 (en) * 2018-04-27 2020-06-23 Taiwan Semiconductor Manufacturing Company Ltd. Phase change memory structure and the same
US10622555B2 (en) 2018-07-31 2020-04-14 Taiwan Semiconductor Manufacturing Co., Ltd. Film scheme to improve peeling in chalcogenide based PCRAM
US11659780B2 (en) * 2019-03-05 2023-05-23 International Business Machines Corporation Phase change memory structure with efficient heating system
US10903422B2 (en) 2019-04-11 2021-01-26 International Business Machines Corporation Vertically oriented memory structure
US11424406B2 (en) * 2020-02-11 2022-08-23 Taiwan Semiconductor Manufacturing Company, Ltd. Generating self-aligned heater for PCRAM using filaments
US11271155B2 (en) 2020-03-10 2022-03-08 International Business Machines Corporation Suppressing oxidation of silicon germanium selenium arsenide material
US20230247843A1 (en) * 2022-02-02 2023-08-03 Western Digital Technologies, Inc., Method of making ovonic threshold switch selectors using microwave annealing

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090026437A1 (en) * 2007-07-25 2009-01-29 Yudong Kim Copper compatible chalcogenide phase change memory with adjustable threshold voltage
TW201017943A (en) * 2008-10-24 2010-05-01 Ind Tech Res Inst Multi-level memory cell and manufacturing method thereof
TW201021205A (en) * 2008-11-28 2010-06-01 Ind Tech Res Inst Phase-change memory devices and methods for fabricating the same
TW201039475A (en) * 2009-04-30 2010-11-01 Macronix Int Co Ltd Low operational current phase change memory structures
TW201123440A (en) * 2009-12-29 2011-07-01 Ind Tech Res Inst Phase change memory devices and fabrication methods thereof

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4077888B2 (ja) 1995-07-21 2008-04-23 株式会社東芝 セラミックス回路基板
KR100190060B1 (ko) 1996-07-16 1999-06-01 윤종용 실리사이드 형성 방법
JP2001257327A (ja) * 2000-03-10 2001-09-21 Nec Corp 半導体装置およびその製造方法
US6545287B2 (en) * 2001-09-07 2003-04-08 Intel Corporation Using selective deposition to form phase-change memory cells
US6869883B2 (en) * 2002-12-13 2005-03-22 Ovonyx, Inc. Forming phase change memories
JP2005032855A (ja) * 2003-07-09 2005-02-03 Matsushita Electric Ind Co Ltd 半導体記憶装置及びその製造方法
US20050029504A1 (en) * 2003-08-04 2005-02-10 Karpov Ilya V. Reducing parasitic conductive paths in phase change memories
US6815704B1 (en) * 2003-09-04 2004-11-09 Silicon Storage Technology, Inc. Phase change memory device employing thermally insulating voids
KR100629265B1 (ko) * 2004-08-04 2006-09-29 삼성전자주식회사 국부적인 고저항영역을 구비하는 도전층 형성방법 및 이를사용하여 제조된 반도체 소자
KR100612913B1 (ko) 2004-12-16 2006-08-16 한국과학기술연구원 ＡＩＮ 열방출층 및 ＴｉＮ 전극이 적용된 상변화 메모리
DE602004013816D1 (de) * 2004-12-30 2008-06-26 St Microelectronics Srl Phasenwechselspeicher und Herstellungsmethode dafür
US7348590B2 (en) * 2005-02-10 2008-03-25 Infineon Technologies Ag Phase change memory cell with high read margin at low power operation
DE602005015853D1 (de) * 2005-09-14 2009-09-17 St Microelectronics Srl Verfahren zur Herstellung einer Phasenwechselspeicher-Anordnung mit einheitlicher Heizelementhöhe
KR100721017B1 (ko) * 2005-12-28 2007-05-22 삼성전자주식회사 불휘발성 메모리 소자 및 그의 형성 방법
US7324365B2 (en) * 2006-03-02 2008-01-29 Infineon Technologies Ag Phase change memory fabricated using self-aligned processing
KR100791477B1 (ko) 2006-08-08 2008-01-03 삼성전자주식회사 상변화 메모리 유닛, 이의 제조 방법, 이를 포함하는상변화 메모리 장치 및 그 제조 방법
KR101131137B1 (ko) 2006-11-30 2012-04-03 삼성전자주식회사 확산 방지막을 포함하는 상변화 메모리 소자 및 그제조방법
US7767994B2 (en) 2006-12-05 2010-08-03 Electronics And Telecommunications Research Institute Phase-change random access memory device and method of manufacturing the same
US7593254B2 (en) * 2007-05-25 2009-09-22 Micron Technology, Inc. Variable resistance memory device with an interfacial adhesion heating layer, systems using the same and methods of forming the same
US20090039331A1 (en) * 2007-08-07 2009-02-12 International Business Machines Corporation Phase change material structures
US20090107290A1 (en) 2007-10-25 2009-04-30 Los Alamos National Security, Llc Plasma-based reduction of titanium oxides
US8080439B2 (en) * 2008-02-28 2011-12-20 Freescale Semiconductor, Inc. Method of making a vertical phase change memory (PCM) and a PCM device
JP2009212202A (ja) * 2008-03-03 2009-09-17 Elpida Memory Inc 相変化メモリ装置およびその製造方法
US7671355B2 (en) * 2008-03-24 2010-03-02 United Microelectronics Corp. Method of fabricating a phase change memory and phase change memory
KR100973278B1 (ko) * 2008-09-05 2010-08-02 주식회사 하이닉스반도체 상변화 기억 소자 및 그의 제조방법
KR101019989B1 (ko) 2008-10-21 2011-03-09 주식회사 하이닉스반도체 상변화 메모리 소자 및 그 제조방법
KR20100052300A (ko) * 2008-11-10 2010-05-19 주식회사 하이닉스반도체 상변화 기억 소자 및 그의 제조방법
KR20100095141A (ko) * 2009-02-20 2010-08-30 주식회사 하이닉스반도체 메모리 소자의 제조방법 및 이를 이용한 상변화 메모리 소자의 제조방법
US9246093B2 (en) * 2009-07-01 2016-01-26 Micron Technology, Inc. Phase change memory cell with self-aligned vertical heater and low resistivity interface
US8243506B2 (en) * 2010-08-26 2012-08-14 Micron Technology, Inc. Phase change memory structures and methods

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090026437A1 (en) * 2007-07-25 2009-01-29 Yudong Kim Copper compatible chalcogenide phase change memory with adjustable threshold voltage
TW201017943A (en) * 2008-10-24 2010-05-01 Ind Tech Res Inst Multi-level memory cell and manufacturing method thereof
TW201021205A (en) * 2008-11-28 2010-06-01 Ind Tech Res Inst Phase-change memory devices and methods for fabricating the same
TW201039475A (en) * 2009-04-30 2010-11-01 Macronix Int Co Ltd Low operational current phase change memory structures
TW201123440A (en) * 2009-12-29 2011-07-01 Ind Tech Res Inst Phase change memory devices and fabrication methods thereof

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CN103119708B (zh) 2015-06-17
US20120051123A1 (en) 2012-03-01
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