TWI449898B - Observation device, inspection device and inspection method - Google Patents

Observation device, inspection device and inspection method Download PDF

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Publication number
TWI449898B
TWI449898B TW097106747A TW97106747A TWI449898B TW I449898 B TWI449898 B TW I449898B TW 097106747 A TW097106747 A TW 097106747A TW 97106747 A TW97106747 A TW 97106747A TW I449898 B TWI449898 B TW I449898B
Authority
TW
Taiwan
Prior art keywords
wavelengths
substrate
light
image
inspection
Prior art date
Application number
TW097106747A
Other languages
English (en)
Chinese (zh)
Other versions
TW200844427A (en
Inventor
深澤和彥
Original Assignee
尼康股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 尼康股份有限公司 filed Critical 尼康股份有限公司
Publication of TW200844427A publication Critical patent/TW200844427A/zh
Application granted granted Critical
Publication of TWI449898B publication Critical patent/TWI449898B/zh

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
TW097106747A 2007-02-28 2008-02-27 Observation device, inspection device and inspection method TWI449898B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007050821 2007-02-28

Publications (2)

Publication Number Publication Date
TW200844427A TW200844427A (en) 2008-11-16
TWI449898B true TWI449898B (zh) 2014-08-21

Family

ID=39721285

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097106747A TWI449898B (zh) 2007-02-28 2008-02-27 Observation device, inspection device and inspection method

Country Status (6)

Country Link
US (1) US20090315988A1 (enExample)
JP (2) JPWO2008105460A1 (enExample)
KR (1) KR20090127892A (enExample)
CN (1) CN101622525A (enExample)
TW (1) TWI449898B (enExample)
WO (1) WO2008105460A1 (enExample)

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* Cited by examiner, † Cited by third party
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JP5563372B2 (ja) * 2010-05-20 2014-07-30 第一実業ビスウィル株式会社 外観検査装置
KR20130045351A (ko) 2010-07-30 2013-05-03 케이엘에이-텐코 코포레이션 웨이퍼 톱니 자국의 ３차원 조사 장치 및 방법
CN102645177B (zh) * 2011-02-17 2014-08-20 竑腾科技股份有限公司 晶圆劈裂的前置检测方法
JPWO2012153695A1 (ja) * 2011-05-10 2014-07-31 国立大学法人豊橋技術科学大学 機能性光源を用いた検査装置と検査方法及び機能性光源とその設計方法
JP5400107B2 (ja) * 2011-08-16 2014-01-29 Ｃｋｄ株式会社 基板検査装置
FR2998047B1 (fr) * 2012-11-12 2015-10-02 Soitec Silicon On Insulator Procede de mesure des variations d'epaisseur d'une couche d'une structure semi-conductrice multicouche
TWI477766B (zh) * 2012-12-18 2015-03-21 財團法人工業技術研究院 檢測裝置以及檢測方法
CN105143814B (zh) * 2013-02-21 2018-11-13 诺威量测设备股份有限公司 光学相位测量方法和系统
JP6132678B2 (ja) * 2013-06-21 2017-05-24 富士フイルム株式会社 偏光フィルターおよびその応用
JP6316068B2 (ja) * 2014-03-31 2018-04-25 国立大学法人 東京大学 検査システムおよび検査方法
JP6433268B2 (ja) 2014-03-31 2018-12-05 国立大学法人 東京大学 検査システムおよび検査方法
TWI571951B (zh) * 2014-09-17 2017-02-21 華亞科技股份有限公司 晶圓傳送盒底座檢查裝置及方法
JP2016070730A (ja) * 2014-09-29 2016-05-09 株式会社Ｓｃｒｅｅｎホールディングス 画像取得装置および画像取得方法
TWI637432B (zh) 2015-04-09 2018-10-01 東京威力科創股份有限公司 Foreign matter removing device, foreign matter removing method, peeling device, foreign matter detecting method, and foreign matter detecting device
JP6450633B2 (ja) * 2015-04-09 2019-01-09 東京エレクトロン株式会社 異物検出方法、異物検出装置および剥離装置
US10003754B2 (en) * 2015-06-18 2018-06-19 Agilent Technologies, Inc. Full field visual-mid-infrared imaging system
JP2017110975A (ja) * 2015-12-15 2017-06-22 キヤノン株式会社 計測装置、システム、計測方法、決定方法及びプログラム
JP6235684B1 (ja) * 2016-11-29 2017-11-22 Ckd株式会社 検査装置及びｐｔｐ包装機
KR102260984B1 (ko) * 2016-12-12 2021-06-03 어플라이드 머티어리얼스, 인코포레이티드 기판을 검사하기 위한 방법 및 명령들이 저장된 컴퓨터 판독가능 매체
US10872794B2 (en) 2017-06-20 2020-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. Automatic in-line inspection system
TWI713130B (zh) * 2017-08-30 2020-12-11 台灣積體電路製造股份有限公司 半導體晶片線上檢驗的系統及方法
CN115979424A (zh) * 2017-12-08 2023-04-18 松下知识产权经营株式会社 检查系统、检查方法、程序和存储介质
CN112461838B (zh) * 2019-09-09 2023-03-10 芯恩（青岛）集成电路有限公司 晶圆缺陷检测装置及方法
JP7536591B2 (ja) * 2020-10-20 2024-08-20 タカノ株式会社 厚みムラ検査装置及び厚みムラ検査方法
JP7804870B2 (ja) * 2021-11-11 2026-01-23 株式会社東京精密 顕微鏡及び半導体製造装置
CN113866180A (zh) * 2021-12-06 2021-12-31 晶芯成(北京)科技有限公司 一种异物检测方法、半导体晶圆检测方法及系统
US12068207B2 (en) 2022-05-27 2024-08-20 Taiwan Semiconductor Manufacturing Company, Ltd. Simultaneous multi-bandwidth optical inspection of semiconductor devices
TWI900897B (zh) * 2023-09-28 2025-10-11 聯策科技股份有限公司 晶圓檢測方法

Citations (2)

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Publication number Priority date Publication date Assignee Title
JPH11237344A (ja) * 1998-02-19 1999-08-31 Hitachi Ltd 欠陥検査方法およびその装置
JP2005061853A (ja) * 2003-08-13 2005-03-10 Nikon Corp 表面検査装置

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JP2555051B2 (ja) * 1987-02-18 1996-11-20 株式会社日立製作所 パタ−ン検出方法及びその装置
JPS6486518A (en) * 1987-06-05 1989-03-31 Hitachi Ltd Reduction projection type position detection and device therefor
JP3388285B2 (ja) * 1993-12-27 2003-03-17 株式会社ニュークリエイション 検査装置
JPH08318619A (ja) * 1995-05-25 1996-12-03 Dainippon Printing Co Ltd 印刷物検査装置
US6690469B1 (en) * 1998-09-18 2004-02-10 Hitachi, Ltd. Method and apparatus for observing and inspecting defects
US7061614B2 (en) * 2001-10-16 2006-06-13 Therma-Wave, Inc. Measurement system with separate optimized beam paths
JP4552859B2 (ja) * 2003-10-27 2010-09-29 株式会社ニコン 表面検査装置および表面検査方法
TW200540939A (en) * 2004-04-22 2005-12-16 Olympus Corp Defect inspection device and substrate manufacturing system using the same
JP2005351845A (ja) * 2004-06-14 2005-12-22 Olympus Corp 基板検査装置および方法
US7539583B2 (en) * 2005-03-04 2009-05-26 Rudolph Technologies, Inc. Method and system for defect detection
US20080218732A1 (en) * 2005-07-27 2008-09-11 University Of Massachusetts Lowell Infrared Scanner for Biological Applications
JP4778755B2 (ja) * 2005-09-09 2011-09-21 株式会社日立ハイテクノロジーズ 欠陥検査方法及びこれを用いた装置
US7564544B2 (en) * 2006-03-22 2009-07-21 3i Systems Corporation Method and system for inspecting surfaces with improved light efficiency
US7586607B2 (en) * 2006-04-21 2009-09-08 Rudolph Technologies, Inc. Polarization imaging
KR101382020B1 (ko) * 2006-07-14 2014-04-04 가부시키가이샤 니콘 표면 검사 장치

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11237344A (ja) * 1998-02-19 1999-08-31 Hitachi Ltd 欠陥検査方法およびその装置
JP2005061853A (ja) * 2003-08-13 2005-03-10 Nikon Corp 表面検査装置

Also Published As

Publication number Publication date
JP2013083672A (ja) 2013-05-09
JPWO2008105460A1 (ja) 2010-06-03
WO2008105460A1 (ja) 2008-09-04
US20090315988A1 (en) 2009-12-24
TW200844427A (en) 2008-11-16
KR20090127892A (ko) 2009-12-14
CN101622525A (zh) 2010-01-06

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