TWI447822B - 半導體裝置及使用具有上及下纖維體密封層的半導體裝置的商品追蹤系統以及其製造方法 - Google Patents
半導體裝置及使用具有上及下纖維體密封層的半導體裝置的商品追蹤系統以及其製造方法 Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
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- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
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- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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| JP2007079120A (ja) | 2005-09-14 | 2007-03-29 | Fujifilm Corp | 感光性組成物、パターン形成材料、感光性積層体、並びにパターン形成装置及びパターン形成方法 |
| JP2007091822A (ja) | 2005-09-27 | 2007-04-12 | Shin Kobe Electric Mach Co Ltd | プリプレグ |
| TWI431726B (zh) | 2006-06-01 | 2014-03-21 | Semiconductor Energy Lab | 非揮發性半導體記憶體裝置 |
| CN101479747B (zh) | 2006-06-26 | 2011-05-18 | 株式会社半导体能源研究所 | 包括半导体器件的纸及其制造方法 |
| EP1970951A3 (en) | 2007-03-13 | 2009-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| EP2372756A1 (en) | 2007-03-13 | 2011-10-05 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device and manufacturing method thereof |
| EP1976000A3 (en) | 2007-03-26 | 2009-05-13 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
-
2008
- 2008-03-12 EP EP08004617A patent/EP1976001A3/en not_active Withdrawn
- 2008-03-12 JP JP2008062127A patent/JP5268395B2/ja not_active Expired - Fee Related
- 2008-03-14 US US12/076,149 patent/US7736958B2/en not_active Expired - Fee Related
- 2008-03-24 TW TW097110379A patent/TWI447822B/zh not_active IP Right Cessation
- 2008-03-24 KR KR1020080026983A patent/KR101389758B1/ko not_active Expired - Fee Related
- 2008-03-25 CN CN2008100879687A patent/CN101276743B/zh not_active Expired - Fee Related
- 2008-03-25 CN CN201110321830.0A patent/CN102496607B/zh not_active Expired - Fee Related
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2010
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| US5928970A (en) * | 1996-09-10 | 1999-07-27 | International Business Machines Corp. | Dustfree prepreg and method for making an article based thereon |
| TW200529088A (en) * | 2004-02-04 | 2005-09-01 | Semiconductor Energy Lab | ID label, ID tag, and ID card |
| TW200618110A (en) * | 2004-10-22 | 2006-06-01 | Hewlett Packard Development Co | Method of forming a transistor having a dual layer dielectric |
| TW200703468A (en) * | 2005-04-28 | 2007-01-16 | Semiconductor Energy Lab Co Ltd | Semiconductor device and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101276743B (zh) | 2011-12-14 |
| KR101389758B1 (ko) | 2014-04-29 |
| CN102496607A (zh) | 2012-06-13 |
| EP1976001A2 (en) | 2008-10-01 |
| US20080242005A1 (en) | 2008-10-02 |
| US7736958B2 (en) | 2010-06-15 |
| US8338931B2 (en) | 2012-12-25 |
| KR20080087692A (ko) | 2008-10-01 |
| CN101276743A (zh) | 2008-10-01 |
| TW200903665A (en) | 2009-01-16 |
| US20100200663A1 (en) | 2010-08-12 |
| EP1976001A3 (en) | 2012-08-22 |
| JP5268395B2 (ja) | 2013-08-21 |
| JP2008270761A (ja) | 2008-11-06 |
| CN102496607B (zh) | 2015-03-25 |
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