TWI442600B - 光電半導體晶片 - Google Patents
光電半導體晶片 Download PDFInfo
- Publication number
- TWI442600B TWI442600B TW099146210A TW99146210A TWI442600B TW I442600 B TWI442600 B TW I442600B TW 099146210 A TW099146210 A TW 099146210A TW 99146210 A TW99146210 A TW 99146210A TW I442600 B TWI442600 B TW I442600B
- Authority
- TW
- Taiwan
- Prior art keywords
- intermediate layer
- layer
- semiconductor wafer
- optoelectronic semiconductor
- stack
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
- H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/018—Bonding of wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102009060749.8A DE102009060749B4 (de) | 2009-12-30 | 2009-12-30 | Optoelektronischer Halbleiterchip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201135976A TW201135976A (en) | 2011-10-16 |
| TWI442600B true TWI442600B (zh) | 2014-06-21 |
Family
ID=43640034
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099146210A TWI442600B (zh) | 2009-12-30 | 2010-12-28 | 光電半導體晶片 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8592840B2 (enExample) |
| EP (1) | EP2519979B1 (enExample) |
| JP (1) | JP2013516749A (enExample) |
| KR (1) | KR101759273B1 (enExample) |
| CN (1) | CN102687289B (enExample) |
| DE (1) | DE102009060749B4 (enExample) |
| TW (1) | TWI442600B (enExample) |
| WO (1) | WO2011080144A2 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102009058796A1 (de) | 2009-12-18 | 2011-06-22 | OSRAM Opto Semiconductors GmbH, 93055 | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
| US9419182B2 (en) | 2012-01-05 | 2016-08-16 | Micron Technology, Inc. | Solid-state radiation transducer devices having at least partially transparent buried-contact elements, and associated systems and methods |
| CN108615725A (zh) | 2012-07-11 | 2018-10-02 | 亮锐控股有限公司 | 降低或者消除ⅲ-氮化物结构中的纳米管缺陷 |
| DE102012111245A1 (de) * | 2012-11-21 | 2014-05-22 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Anschlussbereichs eines optoelektronischen Halbleiterchips |
| DE102013104192A1 (de) | 2013-04-25 | 2014-10-30 | Osram Opto Semiconductors Gmbh | Halbleiterbauelement mit einer Zwischenschicht |
| DE102018126936A1 (de) * | 2018-10-29 | 2020-04-30 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von optoelektronischen Halbleiterbauteilen |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6121638A (en) * | 1995-09-12 | 2000-09-19 | Kabushiki Kaisha Toshiba | Multi-layer structured nitride-based semiconductor devices |
| US5903017A (en) * | 1996-02-26 | 1999-05-11 | Kabushiki Kaisha Toshiba | Compound semiconductor device formed of nitrogen-containing gallium compound such as GaN, AlGaN or InGaN |
| DE69835216T2 (de) * | 1997-07-25 | 2007-05-31 | Nichia Corp., Anan | Halbleitervorrichtung aus einer nitridverbindung |
| JP4166885B2 (ja) * | 1998-05-18 | 2008-10-15 | 富士通株式会社 | 光半導体装置およびその製造方法 |
| JP3786544B2 (ja) * | 1999-06-10 | 2006-06-14 | パイオニア株式会社 | 窒化物半導体素子の製造方法及びかかる方法により製造された素子 |
| DE10042947A1 (de) * | 2000-08-31 | 2002-03-21 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis |
| US6504183B1 (en) | 2000-09-08 | 2003-01-07 | United Epitaxy Company | Epitaxial growth of nitride semiconductor device |
| DE10056475B4 (de) * | 2000-11-15 | 2010-10-07 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis mit verbesserter p-Leitfähigkeit und Verfahren zu dessen Herstellung |
| US6828596B2 (en) * | 2002-06-13 | 2004-12-07 | Lumileds Lighting U.S., Llc | Contacting scheme for large and small area semiconductor light emitting flip chip devices |
| KR100580623B1 (ko) * | 2003-08-04 | 2006-05-16 | 삼성전자주식회사 | 초격자 구조의 반도체층을 갖는 반도체 소자 및 그 제조방법 |
| WO2005036658A1 (en) * | 2003-10-14 | 2005-04-21 | Showa Denko K.K. | Group-iii nitride semiconductor device |
| JP4423969B2 (ja) * | 2003-12-25 | 2010-03-03 | 日亜化学工業株式会社 | 窒化物半導体積層基板およびそれを用いた窒化物半導体デバイス、窒化物半導体レーザ素子 |
| KR101386192B1 (ko) | 2004-01-26 | 2014-04-17 | 오스람 옵토 세미컨덕터스 게엠베하 | 전류 분산 구조물을 갖는 박막 ｌｅｄ |
| DE102005003460A1 (de) * | 2004-01-26 | 2005-10-13 | Osram Opto Semiconductors Gmbh | Dünnfilm-LED mit einer Stromaufweitungsstruktur |
| WO2005106972A1 (de) * | 2004-04-29 | 2005-11-10 | Osram Opto Semiconductors Gmbh | Verfahren zum herstellen eines strahlungsemittierenden halbleiterchips |
| JP2007201195A (ja) | 2006-01-26 | 2007-08-09 | Sumitomo Electric Ind Ltd | 窒化物半導体発光素子 |
| JPWO2007129773A1 (ja) | 2006-05-10 | 2009-09-17 | 昭和電工株式会社 | Ｉｉｉ族窒化物化合物半導体積層構造体 |
| EP1883141B1 (de) | 2006-07-27 | 2017-05-24 | OSRAM Opto Semiconductors GmbH | LD oder LED mit Übergitter-Mantelschicht |
| DE102006046237A1 (de) * | 2006-07-27 | 2008-01-31 | Osram Opto Semiconductors Gmbh | Halbleiter-Schichtstruktur mit Übergitter |
| DE102007046027A1 (de) | 2007-09-26 | 2009-04-02 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip mit einer Mehrfachquantentopfstruktur |
| US8368100B2 (en) * | 2007-11-14 | 2013-02-05 | Cree, Inc. | Semiconductor light emitting diodes having reflective structures and methods of fabricating same |
| DE102007057241A1 (de) | 2007-11-28 | 2009-06-04 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Schichtenstapels auf einem kristallinen Substrat und Anordnung umfassend einen auf einem Substrat angeordneten Schichtenstapel |
| DE102008011848A1 (de) * | 2008-02-29 | 2009-09-03 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen |
| DE102008032318A1 (de) | 2008-03-31 | 2009-10-01 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines solchen |
| KR101055090B1 (ko) * | 2009-03-02 | 2011-08-08 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
-
2009
- 2009-12-30 DE DE102009060749.8A patent/DE102009060749B4/de active Active
-
2010
- 2010-12-20 US US13/519,345 patent/US8592840B2/en active Active
- 2010-12-20 WO PCT/EP2010/070274 patent/WO2011080144A2/de not_active Ceased
- 2010-12-20 JP JP2012546412A patent/JP2013516749A/ja active Pending
- 2010-12-20 CN CN201080060178.5A patent/CN102687289B/zh active Active
- 2010-12-20 EP EP10798083.1A patent/EP2519979B1/de active Active
- 2010-12-20 KR KR1020127020129A patent/KR101759273B1/ko active Active
- 2010-12-28 TW TW099146210A patent/TWI442600B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| EP2519979B1 (de) | 2019-12-18 |
| KR101759273B1 (ko) | 2017-07-18 |
| CN102687289A (zh) | 2012-09-19 |
| US8592840B2 (en) | 2013-11-26 |
| US20120313138A1 (en) | 2012-12-13 |
| DE102009060749A1 (de) | 2011-07-07 |
| EP2519979A2 (de) | 2012-11-07 |
| CN102687289B (zh) | 2016-08-03 |
| WO2011080144A2 (de) | 2011-07-07 |
| KR20120094528A (ko) | 2012-08-24 |
| WO2011080144A3 (de) | 2011-12-22 |
| TW201135976A (en) | 2011-10-16 |
| DE102009060749B4 (de) | 2021-12-30 |
| JP2013516749A (ja) | 2013-05-13 |
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