DE102009060749B4 - Optoelektronischer Halbleiterchip - Google Patents

Optoelektronischer Halbleiterchip Download PDF

Info

Publication number
DE102009060749B4
DE102009060749B4 DE102009060749.8A DE102009060749A DE102009060749B4 DE 102009060749 B4 DE102009060749 B4 DE 102009060749B4 DE 102009060749 A DE102009060749 A DE 102009060749A DE 102009060749 B4 DE102009060749 B4 DE 102009060749B4
Authority
DE
Germany
Prior art keywords
layer sequence
semiconductor chip
intermediate layers
layers
doped layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE102009060749.8A
Other languages
German (de)
English (en)
Other versions
DE102009060749A1 (de
Inventor
Dr. Peter Matthias
Dr. Gmeinwieser Nikolaus
Tobias Meyer
Dr. Taki Tetsuya
Dr. Lugauer Hans-Jürgen
Alexander Walter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DE102009060749.8A priority Critical patent/DE102009060749B4/de
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to CN201080060178.5A priority patent/CN102687289B/zh
Priority to KR1020127020129A priority patent/KR101759273B1/ko
Priority to PCT/EP2010/070274 priority patent/WO2011080144A2/de
Priority to EP10798083.1A priority patent/EP2519979B1/de
Priority to JP2012546412A priority patent/JP2013516749A/ja
Priority to US13/519,345 priority patent/US8592840B2/en
Priority to TW099146210A priority patent/TWI442600B/zh
Publication of DE102009060749A1 publication Critical patent/DE102009060749A1/de
Application granted granted Critical
Publication of DE102009060749B4 publication Critical patent/DE102009060749B4/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Led Devices (AREA)
DE102009060749.8A 2009-12-30 2009-12-30 Optoelektronischer Halbleiterchip Active DE102009060749B4 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
DE102009060749.8A DE102009060749B4 (de) 2009-12-30 2009-12-30 Optoelektronischer Halbleiterchip
KR1020127020129A KR101759273B1 (ko) 2009-12-30 2010-12-20 광전자 반도체 칩 그리고 ＡｌＧａＮ을 기본으로 하는 중간층의 용도
PCT/EP2010/070274 WO2011080144A2 (de) 2009-12-30 2010-12-20 Optoelektronischer halbleiterchip und verwendung einer auf algan basierenden zwischenschicht
EP10798083.1A EP2519979B1 (de) 2009-12-30 2010-12-20 Optoelektronischer halbleiterchip mit zwei auf algan basierenden zwischenschichten
CN201080060178.5A CN102687289B (zh) 2009-12-30 2010-12-20 光电子半导体芯片以及基于AlGaN的中间层的应用
JP2012546412A JP2013516749A (ja) 2009-12-30 2010-12-20 オプトエレクトロニクス半導体チップおよびＡｌＧａＮをベースとする中間層の使用
US13/519,345 US8592840B2 (en) 2009-12-30 2010-12-20 Optoelectronic semiconductor chip and use of an intermediate layer based on AlGaN
TW099146210A TWI442600B (zh) 2009-12-30 2010-12-28 光電半導體晶片

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102009060749.8A DE102009060749B4 (de) 2009-12-30 2009-12-30 Optoelektronischer Halbleiterchip

Publications (2)

Publication Number Publication Date
DE102009060749A1 DE102009060749A1 (de) 2011-07-07
DE102009060749B4 true DE102009060749B4 (de) 2021-12-30

Family

ID=43640034

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102009060749.8A Active DE102009060749B4 (de) 2009-12-30 2009-12-30 Optoelektronischer Halbleiterchip

Country Status (8)

Country Link
US (1) US8592840B2 (enExample)
EP (1) EP2519979B1 (enExample)
JP (1) JP2013516749A (enExample)
KR (1) KR101759273B1 (enExample)
CN (1) CN102687289B (enExample)
DE (1) DE102009060749B4 (enExample)
TW (1) TWI442600B (enExample)
WO (1) WO2011080144A2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009058796A1 (de) 2009-12-18 2011-06-22 OSRAM Opto Semiconductors GmbH, 93055 Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
US9419182B2 (en) 2012-01-05 2016-08-16 Micron Technology, Inc. Solid-state radiation transducer devices having at least partially transparent buried-contact elements, and associated systems and methods
WO2014009856A1 (en) 2012-07-11 2014-01-16 Koninklijke Philips N.V. Reducing or eliminating nanopipe defects in iii-nitride structures
DE102012111245A1 (de) * 2012-11-21 2014-05-22 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Anschlussbereichs eines optoelektronischen Halbleiterchips
DE102013104192A1 (de) * 2013-04-25 2014-10-30 Osram Opto Semiconductors Gmbh Halbleiterbauelement mit einer Zwischenschicht
DE102018126936A1 (de) 2018-10-29 2020-04-30 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von optoelektronischen Halbleiterbauteilen

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10042947A1 (de) 2000-08-31 2002-03-21 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis
US20030071276A1 (en) 2000-09-08 2003-04-17 United Epitaxy Company Epitaxial growth of nitride semiconductor device
DE102005003460A1 (de) 2004-01-26 2005-10-13 Osram Opto Semiconductors Gmbh Dünnfilm-LED mit einer Stromaufweitungsstruktur
DE69835216T2 (de) 1997-07-25 2007-05-31 Nichia Corp., Anan Halbleitervorrichtung aus einer nitridverbindung
DE102006046237A1 (de) 2006-07-27 2008-01-31 Osram Opto Semiconductors Gmbh Halbleiter-Schichtstruktur mit Übergitter
US20080093611A1 (en) 2004-04-29 2008-04-24 Berthold Hahn Method for Production of a Radiation-Emitting Semiconductor Chip
DE102008032318A1 (de) 2008-03-31 2009-10-01 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines solchen

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6121638A (en) 1995-09-12 2000-09-19 Kabushiki Kaisha Toshiba Multi-layer structured nitride-based semiconductor devices
US5903017A (en) 1996-02-26 1999-05-11 Kabushiki Kaisha Toshiba Compound semiconductor device formed of nitrogen-containing gallium compound such as GaN, AlGaN or InGaN
JP4166885B2 (ja) * 1998-05-18 2008-10-15 富士通株式会社 光半導体装置およびその製造方法
JP3786544B2 (ja) * 1999-06-10 2006-06-14 パイオニア株式会社 窒化物半導体素子の製造方法及びかかる方法により製造された素子
DE10056475B4 (de) * 2000-11-15 2010-10-07 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis mit verbesserter p-Leitfähigkeit und Verfahren zu dessen Herstellung
US6828596B2 (en) * 2002-06-13 2004-12-07 Lumileds Lighting U.S., Llc Contacting scheme for large and small area semiconductor light emitting flip chip devices
KR100580623B1 (ko) * 2003-08-04 2006-05-16 삼성전자주식회사 초격자 구조의 반도체층을 갖는 반도체 소자 및 그 제조방법
EP1673815B1 (en) * 2003-10-14 2019-06-05 Toyoda Gosei Co., Ltd. Group iii nitride semiconductor element and semiconductor devices incorporating the same
JP4423969B2 (ja) * 2003-12-25 2010-03-03 日亜化学工業株式会社 窒化物半導体積層基板およびそれを用いた窒化物半導体デバイス、窒化物半導体レーザ素子
KR101386192B1 (ko) 2004-01-26 2014-04-17 오스람 옵토 세미컨덕터스 게엠베하 전류 분산 구조물을 갖는 박막 ｌｅｄ
JP2007201195A (ja) * 2006-01-26 2007-08-09 Sumitomo Electric Ind Ltd 窒化物半導体発光素子
WO2007129773A1 (ja) * 2006-05-10 2007-11-15 Showa Denko K.K. Iii族窒化物化合物半導体積層構造体
EP1883141B1 (de) 2006-07-27 2017-05-24 OSRAM Opto Semiconductors GmbH LD oder LED mit Übergitter-Mantelschicht
DE102007046027A1 (de) 2007-09-26 2009-04-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip mit einer Mehrfachquantentopfstruktur
US8368100B2 (en) * 2007-11-14 2013-02-05 Cree, Inc. Semiconductor light emitting diodes having reflective structures and methods of fabricating same
DE102007057241A1 (de) * 2007-11-28 2009-06-04 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Schichtenstapels auf einem kristallinen Substrat und Anordnung umfassend einen auf einem Substrat angeordneten Schichtenstapel
DE102008011848A1 (de) * 2008-02-29 2009-09-03 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
KR101055090B1 (ko) * 2009-03-02 2011-08-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69835216T2 (de) 1997-07-25 2007-05-31 Nichia Corp., Anan Halbleitervorrichtung aus einer nitridverbindung
DE10042947A1 (de) 2000-08-31 2002-03-21 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis
US20030071276A1 (en) 2000-09-08 2003-04-17 United Epitaxy Company Epitaxial growth of nitride semiconductor device
DE102005003460A1 (de) 2004-01-26 2005-10-13 Osram Opto Semiconductors Gmbh Dünnfilm-LED mit einer Stromaufweitungsstruktur
US20080093611A1 (en) 2004-04-29 2008-04-24 Berthold Hahn Method for Production of a Radiation-Emitting Semiconductor Chip
DE102006046237A1 (de) 2006-07-27 2008-01-31 Osram Opto Semiconductors Gmbh Halbleiter-Schichtstruktur mit Übergitter
DE102008032318A1 (de) 2008-03-31 2009-10-01 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines solchen

Also Published As

Publication number Publication date
DE102009060749A1 (de) 2011-07-07
WO2011080144A3 (de) 2011-12-22
US20120313138A1 (en) 2012-12-13
EP2519979A2 (de) 2012-11-07
JP2013516749A (ja) 2013-05-13
WO2011080144A2 (de) 2011-07-07
TWI442600B (zh) 2014-06-21
KR20120094528A (ko) 2012-08-24
US8592840B2 (en) 2013-11-26
CN102687289A (zh) 2012-09-19
CN102687289B (zh) 2016-08-03
KR101759273B1 (ko) 2017-07-18
TW201135976A (en) 2011-10-16
EP2519979B1 (de) 2019-12-18

Similar Documents

Publication Publication Date Title
DE112004002809B9 (de) Verfahren zum Herstellen eines strahlungsemittierenden Halbleiterchips und durch dieses Verfahren hergestellter Halbleiterchip
DE112006001084B4 (de) Licht emittierende Bauelemente mit aktiven Schichten, die sich in geöffnete Grübchen erstrecken
EP1920508B1 (de) Verfahren zum lateralen zertrennen eines halbleiterstapelwafers
EP1709694B1 (de) Dünnfilm-led mit einer stromaufweitungsstruktur
DE102007056970A1 (de) Halbleiterelemente mit geringen TDs (Threading Dislocations) und verbesserter Lichtextraktion sowie Verfahren zum Herstellen derselben
EP1901357A2 (de) Optoelektronischer Halbleiterchip
WO2014053445A1 (de) Verfahren zur herstellung eines leuchtdioden-displays und leuchtdioden-display
DE102009060749B4 (de) Optoelektronischer Halbleiterchip
WO2018122103A1 (de) Halbleiterlaserdiode
WO2007121739A2 (de) Optoelektronisches halbleiterbauelement
WO2012049031A1 (de) Verfahren zur herstellung einer halbleiterschichtenfolge, strahlungsemittierender halbleiterchip und optoelektronisches bauteil
DE102009059887A1 (de) Optoelektronischer Halbleiterchip
DE102007057756B4 (de) Verfahren zur Herstellung eines optoelektronischen Halbleiterkörpers
DE102016101442B4 (de) Konversionselement und strahlungsemittierendes Halbleiterbauelement mit einem solchen Konversionselement
EP3841619A1 (de) Optoelektronisches halbleiterbauelement mit einer halbleiterkontaktschicht und verfahren zur herstellung des optoelektronischen halbleiterbauelements
DE102016124860A1 (de) Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
WO2017060158A1 (de) Verfahren zur herstellung eines halbleiterchips und halbleiterchip
DE102005003460A1 (de) Dünnfilm-LED mit einer Stromaufweitungsstruktur
DE102012112771A1 (de) Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
DE10244447B4 (de) Strahlungsemittierendes Halbleiterbauelement mit vertikaler Emissionsrichtung und Herstellungsverfahren dafür
DE102020106113A1 (de) Strahlungsemittierender halbleiterkörper, strahlungsemittierender halbleiterchip und verfahren zur herstellung eines strahlungsemittierenden halbleiterkörpers
DE112023001652T5 (de) Verfahren zur herstellung eines halbleiterchips und halbleiterchip
EP1649497B1 (de) Verfahren zur herstellung einer vielzahl von optoelektronischen halbleiterchips und optoelektronischer halbleiterchip
WO2017021301A1 (de) Verfahren zur herstellung eines nitrid-halbleiterbauelements und nitrid-halbleiterbauelement
DE102016103353B4 (de) Verfahren zur Herstellung eines optoelektronischen Bauelements

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R016 Response to examination communication
R016 Response to examination communication
R018 Grant decision by examination section/examining division
R020 Patent grant now final
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0033320000

Ipc: H10H0020825000